Search NASA⌕ Search

SEARCH · Search NASA

Results for “Commercial Silicon”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Low cost solar array project. Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

Technical activities are reported in the design of process, facilities, and equipment for producing silicon at a rate and price comensurate with production goals for low cost solar cell modules. The silane-silicone process has potential for providing high purity poly-silicon on a commercial scale at a price of fourteen dollars per kilogram by 1986, (1980 dollars). Commercial process, economic analysis, process support research and development, and quality control are discussed.

Source record↗
NASA NTRS1983

High-density Schottky barrier IRCCD sensors for remote sensing applications

It is pointed out that the ambitious goals envisaged for the next generation of space-borne sensors challenge the state-of-the-art in solid-state imaging technology. Studies are being conducted with the aim to provide focal plane array technology suitable for use in future Multispectral Linear Array (MLA) earth resource instruments. An important new technology for IR-image sensors involves the use of monolithic Schottky barrier infrared charge-coupled device arrays. This technology is suitable for earth sensing applications in which moderate quantum efficiency and intermediate operating temperatures are required. This IR sensor can be fabricated by using standard integrated circuit (IC) processing techniques, and it is possible to employ commercial IC grade silicon. For this reason, it is feasible to construct Schottky barrier area and line arrays with large numbers of elements and high-density designs. A Pd2Si Schottky barrier sensor for multispectral imaging in the 1 to 3.5 micron band is under development.

Elabd, H.↗
NASA NTRS1994

Using Si Diodes To Detect H2 Liquid/Vapor Interfaces

Commercially available silicon-diode temperature sensors used to detect interfaces between hydrogen liquid and hydrogen vapor at steady-state saturation conditions. Sensors mounted at short intervals along rod to form rake-like array. Array inserted in tank with rod oriented vertically, where it senses level of liquid hydrogen to resolution equal to interval between sensors. Basic idea to measure voltage across sensor while supplying small electric current that heats sensor. Because vapor cools sensor less effectively than liquid does, sensor's steady-state temperature greater when sensor surrounded by vapor than when immersed in liquid. Voltage output decreases as temperature increases for silicon diodes. Thus, temperature (voltage) reading used to determine whether liquid level above or below sensor.

Dempsey, Paula Jean↗
NASA NTRS1992

JTEC panel on display technologies in Japan

This report is one in a series of reports that describes research and development efforts in Japan in the area of display technologies. The following are included in this report: flat panel displays (technical findings, liquid crystal display development and production, large flat panel displays (FPD's), electroluminescent displays and plasma panels, infrastructure in Japan's FPD industry, market and projected sales, and new a-Si active matrix liquid crystal display (AMLCD) factory); materials for flat panel displays (liquid crystal materials, and light-emissive display materials); manufacturing and infrastructure of active matrix liquid crystal displays (manufacturing logistics and equipment); passive matrix liquid crystal displays (LCD basics, twisted nematics LCD's, supertwisted nematic LCD's, ferroelectric LCD's, and a comparison of passive matrix LCD technology); active matrix technology (basic active matrix technology, investment environment, amorphous silicon, polysilicon, and commercial products and prototypes); and projection displays (comparison of Japanese and U.S. display research, and technical evaluation of work).

Tannas, Lawrence E., Jr.↗
NASA NTRSDate not supplied

3D Material Response of the MSL Heatshield Using NuSil-Coated PICA

The Mars Science Laboratory (MSL) was protected during its atmospheric entry by an instrumented heatshield that used NASA's Phenolic Impregnated Carbon Ablator (PICA) material [1]. PICA is a lightweight carbon fiber/polymeric resin material that offers outstanding performance for protecting probes during planetary entry. Data from the Mars Entry Descent and Landing Instrument (MEDLI) suite on MSL offers unique in-flight validation data for models of material response and atmospheric entry. MEDLI recorded, among other things, time-resolved in-depth temperature data of PICA using thermocouple sensors assembled in the MEDLI Integrated Sensor Plugs (MISP) [2]. A space-grade silicone-based coating commercially known as NuSil CV-1144-0 [3] was applied to the entire MSL heatshield, including the MEDLI plugs, to mitigate the spread of dust from PICA. Modeling the thermal response of PICA-NuSil (PICA-N) system is still an open challenge. Ground testing of PICA-N models exhibited surface temperature jumps of the order of 150 K due to oxide scale formation and sub-sequent NuSil burn-off. It is therefore critical to include a validated model for the material response of the coating in engineering codes. A test campaign has been conducted at the NASA’s Langley HyMETS [4] facility to screen the response of PICA-N and gather detailed data on its behavior [5]. A first model of PICA-N thermal response has been developed using the Hy-METS experiments [6]. The objective of this work is to analyze the material response of the latest PICA-N model compared to the engineering model used to simulate the entry of MSL. The environment and material response around the MSL aeroshell during Mars atmospheric entry is simulated using a collection of tools. The Direct Simulation Monte Carlo SPARTA code [7] is used in the rarefied regime, the Data Parallel Line Relaxation (DPLR) code [8] is used in the continuum regime and radiative heating conditions are provided by the Nonequilibrium air radiation (NEQAIR) code [9] to estimate the environmental conditions. The thermal response inside the material is computed using the Porous material Analysis Toolbox based on Open-FOAM (PATO) [10,11,12]. Thermodynamic and chemistry properties are estimated using the Mutation++ library [13]. The approach implemented in PATO as a first cut PICA-N thermal response model is outlined in Figure 1. While the recession is less than the coating thickness, the Surface mass and energy balance Boundary Condition (SBC) uses the NuSil B’ tables. Once the recession removes the coating, the usual PICA B’ tables are used for the SBC. The B’ tables are computed using an equilibrium solver implemented in Mutation++, given the temperature, pressure, blowing rate, composition of the pyrolysis and environment gases, and the condensed species at the surface. Preliminary results of the 3D material response of the MSL heat-shield at the peak heating (80 sec after Entry Interface) are shown in Figure 2. Current NASA’s mission to Mars, Mars 2020, used the spare heatshield of MSL for thermal protection during entry, descent, and landing. In preparation for Mars 2020 post-flight analysis, the PATO high-fidelity material response capability was benchmarked against flight data from MEDLI. This effort represents an important milestone toward the development of validated predictive capabilities for designing thermal protection systems for planetary probes. This bench-marking is awaiting the final release of the MEDLI-2 data.

Aerospace↗
NASA NTRS1994

Crack-Growth Resistance of in Situ-Toughened Silicon Nitride

The fracture toughness of a commercial, hot-pressed, in situ-toughened silicon nitride with an elongated grain structure is determined by four different testing methods. The fracture toughness is found to be 5.76 +/- 0.27, 8.48 +/- 0.50, 10.16 +/- 0.66, and 10.68 +/- 0.39 MPa x m(exp 1/2), respectively, by indentation crack size measurement, indentation strength, single-edge-precracked-beam, and chevron-notched-beam methods. The discrepancy in fracture toughness between the testing methods is related to R-curve behavior, as measured using the indentation strength technique. These results indicate that there is no unique fracture toughness value and that a fracture toughness testing method with appropriate qualifiers is needed for rising R-curve materials. Therefore, care should be taken in interpreting and utilizing fracture toughness values evaluated from different testing methods if a material exhibits a rising R-curve. Complete characterization of the R-curve may be a prerequisite.

Salem, Jonathan A.↗
NASA NTRS1984

Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988

Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.

Costogue, E. N.↗
NASA NTRS1983

Flat-plate solar array project: Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

The process technology for the manufacture of semiconductor-grade silicon in a large commercial plant by 1986, at a price less than $14 per kilogram of silicon based on 1975 dollars is discussed. The engineering design, installation, checkout, and operation of an Experimental Process System Development unit was discussed. Quality control of scaling-up the process and an economic analysis of product and production costs are discussed.

Source record↗
NASA NTRS1994

Radiation Resistance Studies of Amorphous Silicon Alloy Photovoltaic Materials

The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys was investigated. A number of different device structures were irradiated with 1.0 MeV protons. The cells were insensitive to proton fluences below 1E12 sq cm. The parameters of the irradiated cells were restored with annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters for fluences below lE14 sq cm require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed in dark I-V measurements. The current mechanisms were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

Woodyard, James R.↗
NASA NTRS2003

Foreign Object Damage of Two Gas-Turbine Grade Silicon Nitrides in a Thin Disk Configuration

Foreign object damage (FOD) behavior of two commercial gas-turbine grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through post-impact strength testing for thin disks impacted by steel-ball projectiles with a diameter of 1.59 mm in a velocity range from 115 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (K(sub IC)). The critical impact velocity in which the corresponding post-impact strength yielded the lowest value was V(sub c) approx. 440 and 300 m/s for AS800 and SN282, respectively. A unique lower-strength regime was typified for both silicon nitrides depending on impact velocity, attributed to significant radial cracking. The damages generated by projectile impact were typically in the forms of ring, radial, and cone cracks with their severity and combination being dependent on impact velocity. Unlike thick (3 mm) flexure bar specimens used in the previous studies, thin (2 mm) disk target specimens exhibited a unique backside radial cracking occurring on the reverse side just beneath the impact sites at and above impact velocity of 160 and 220 m/s for SN282 and AS800, respectively.

Choi, Sung R.↗
NASA NTRS2002

Foreign Object Damage Behavior of Two Gas-turbine Grade Silicon Nitrides by Steel Ball Projectiles at Ambient Temperature

Foreign object damage (FOD) behavior of two commercial gas-turbine grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through strength testing of flexure test specimens impacted by steel-ball projectiles with a diameter of 1.59 mm in a velocity range from 220 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (K(sub IC)). Additionally, the FOD response of an equiaxed, fine-grained silicon nitride (NC132) was also investigated to provide further insight. The NC132 silicon nitride exhibited the lowest fracture toughness of the three materials tested, providing further evidence that K(sub IC) is a key material parameter affecting FOD resistance. The observed damage generated by projectile impact was typically in the forms of well- or ill-developed ring or cone cracks with little presence of radial cracks.

Choi, Sung R.↗
NASA NTRS2003

Foreign Object Damage in Disks of Two Gas-turbine-grade Silicon Nitrides by Steel Ball Projectiles at Ambient Temperature

Foreign object damage (FOD) behavior of two commercial gas-turbine-grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through postimpact strength testing of disks impacted by steel ball projectiles with a diameter of 1.59 mm in a velocity range from 115 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (k(sub Ic)). The critical impact velocity V(sub c) for which the corresponding postimpact strength was the lowest was V(sub c) approximately equal to 440 and 300 m/s AS800 and SN282, respectively. A unique lower strength regime was typified for both silicon nitrides depending on impact velocity and was attributed to significant radial cracking. The damage generated by projectile impact was typically in the form of ring, radial, and cone cracks with their severity and combination being dependent on impact velocity. Unlike the thick (4 millimeters) flexure bar specimens used in our previous studies, the thin (2 millimeter) disk target specimen exhibited a unique back-side radial cracking on the reverse side just beneath the impact sites at and above impact velocities of 160 meters per second for SN282 and 220 meters per second AS800.

Choi, Sung R.↗
NASA NTRS1990

Burner rig hot corrosion of silicon carbide and silicon nitride

A number of commercially available SiC and Si3N4 materials were exposed to 1000 C for 40 h in a high-velocity, pressurized burner rig as a simulation of an aircraft turbine environment. Na impurities (2 ppm) added to the burner flame resulted in molten Na2SO4 deposition, attack of the SiC and Si3N4, and formation of substantial Na2O+x(SiO2) corrosion product. Room-temperature strength of the materials decreased as a result of the formation of corrosion pits in SiC and grain-boundary dissolution and pitting in Si3N4.

Fox, Dennis S.↗
NASA NTRS1994

Microstructure and Mechanical Properties of Reaction-Formed Silicon Carbide (RFSC) Ceramics

The microstructure and mechanical properties of reaction-formed silicon carbide (RFSC) ceramics fabricated by silicon infiltration of porous carbon preforms are discussed. The morphological characterization of the carbon preforms indicates a very narrow pore size distribution. Measurements of the preform density by physical methods and by mercury porosimetry agree very well and indicate that virtually all of the porosity in the preforms is open to infiltrating liquids. The average room temperature flexural strength of the RFSC material with approximately 8 at.% free silicon is 369 +/- 28 MPa (53.5 +/- 4 ksi). The Weibull strength distribution data give a characteristic strength value of 381 MPa (55 ksi) and a Weibull modulus of 14.3. The residual silicon content is lower and the strengths are superior to those of most commercially available reaction-bonded silicon carbide materials.

Singh, M.↗
NASA NTRS1999

Utilizing Controlled Vibrations in a Microgravity Environment to Understand and Promote Microstructural Homogeneity During Floating-Zone Crystal Growth

It has been demonstrated in floating-zone configurations utilizing silicone oil and nitrate salts that mechanically induced vibration effectively minimizes detrimental, gravity independent, thermocapillary flow. The processing parameters leading to crystal improvement and aspects of the on-going modeling effort are discussed. Plans for applying the crystal growth technique to commercially relevant materials, e.g., silicon, as well as the value of processing in a microgravity environment are presented.

Grugel, Richard N.↗
NASA NTRS1985

Environmental effects on the tensile strength of chemically vapor deposited silicon carbide fibers

The room temperature and elevated temperature tensile strengths of commercially available chemically vapor-deposited (CVD) silicon carbide fibers were measured after 15 min heat treatment to 1600 C in various environments. These environments included oxygen, air, argon and nitrogen at one atmosphere and vacuum at 10/9 atmosphere. Two types of fibers were examined which differed in the SiC content of their carbon-rich coatings. Threshold temperature for fiber strength degradation was observed to be dependent on the as-received fiber-flaw structure, on the environment and on the coating. Fractographic analyses and flexural strength measurements indicate that tensile strength losses were caused by surface degradation. Oxidation of the surface coating is suggested as one possible degradation mechanism. The SiC fibers containing the higher percentage of SiC near the surface of the carbon-rich coating show better strength retention and higher elevated temperature strength.

Bhatt, R. T.↗
NASA NTRS1989

Deployable aerospace PV array based on amorphous silicon alloys

The development of the first commercial, ultralight, flexible, deployable, PV array for aerospace applications is discussed. It is based on thin-film, amorphous silicon alloy, multijunction, solar cells deposited on a thin metal or polymer by a proprietary, roll-to-roll process. The array generates over 200 W at AM0 and is made of 20 giant cells, each 54 cm x 29 cm (1566 sq cm in area). Each cell is protected with bypass diodes. Fully encapsulated array blanket and the deployment mechanism weigh about 800 and 500 g, respectively. These data yield power per area ratio of over 60 W/sq m specific power of over 250 W/kg (4 kg/kW) for the blanket and 154 W/kg (6.5 kg/kW) for the power system. When stowed, the array is rolled up to a diameter of 7 cm and a length of 1.11 m. It is deployed quickly to its full area of 2.92 m x 1.11 m, for instant power. Potential applications include power for lightweight space vehicles, high altitude balloons, remotely piloted and tethered vehicles. These developments signal the dawning of a new age of lightweight, deployable, low-cost space arrays in the range from tens to tens of thousands of watts for near-term applications and the feasibility of multi-100 kW to MW arrays for future needs.

Hanak, Joseph J.↗