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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Isolated Single-stage Three-phase AC/DC Converter using Bidirectional Switches

The advent of the SiC Bidirectional FET (BiDFET), a monolithic 1.2 kV bidirectional switch, has rendered the single-stage three-phase AC/DC converter topology a promising approach for implementing AC/DC converters. This topology, which integrates a full-bridge converter with a single-phase to three-phase matrix converter via a high-frequency transformer, is particularly suitable for applications requiring galvanic isolation, buck-boost functionality, and bidirectional power flow. The single-stage design eliminates the need for bulky and unreliable electrolytic capacitors, and utilizes a single magnetic component for power transfer. In the matrix converter, bidirectional switches, which were traditionally implemented using combinations of multiple semiconductor devices such as MOSFETs, IGBTs, and diodes, can now be realized using the single-chip solution, BiDFET. This advancement leads to a lower switch count, compact converter implementation, with lower inductance commutation cells, thereby enhancing the overall efficiency and compactness of the system. The paper presents a unified model of the converter, considering all control parameters, including the duty cycles and phase shift of transformer voltages. Detailed expressions for power transfer, transformer currents, and currents at AC and DC ports are provided. Additionally, the paper outlines the conditions necessary for soft-switching of all switches and the commutation schemes required for the practical implementation of the matrix converter modulation scheme. A hardware prototype of a 10 kW, 480 VRMS, LL/ 800 V AC/DC system has been developed, and experimental results are presented to demonstrate its performance.

BiDFET↗
DOE OSTI2023

Strain Anisotropy Driven Spontaneous Formation of Nanoscrolls from 2D Janus Layers

2D Janus transition metal dichalcogenides (TMDs) have attracted attention due to their emergent properties arising from broken mirror symmetry and self‐driven polarization fields. While it has been proposed that their vdW superlattices hold the key to achieving superior properties in piezoelectricity and photovoltaic, available synthesis has ultimately limited their realization. Here, in this study, the first packed vdW nanoscrolls made from Janus TMDs through a simple one‐drop solution technique are reported. The results, including ab initio simulations, show that the Bohr radius difference between the top sulfur and the bottom selenium atoms within Janus ${M^S_{Se}}$ (M = Mo, W) results in a permanent compressive surface strain that acts as a nanoscroll formation catalyst after small liquid interaction. Unlike classical 2D layers, the surface strain in Janus TMDs can be engineered from compressive to tensile by placing larger Bohr radius atoms on top (${M_S^{Se}}$) to yield inverted C scrolls. Detailed microscopy studies offer the first insights into their morphology and readily formed Moiré lattices. In contrast, spectroscopy and FETs studies establish their excitonic and device properties and highlight significant differences compared to 2D flat Janus TMDs. These results introduce the first polar Janus TMD nanoscrolls and introduce inherent strain‐driven scrolling dynamics as a catalyst to create superlattices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Paper-based gold nanoparticles decorated SWCNTs chemiresistive sensor for sensitive detection of As(III) based on electrochemical doping

A paper-based chemiresistive sensor consisting of a single-walled carbon nanotubes network with electrodeposited gold nanoparticles (AuNPs-SWCNTs) was developed for the sensitive detection of As(III). A new sensing strategy was also proposed combined with a paper-based device for As(III) chemiresistive detection based on the electrochemical doping of As(0) on the AuNPs-SWCNTs channel. Here, the proposed paper-based chemiresistive sensor was manufactured by wax printing and vacuum deposition using a water-based SWCNTs ink. The sensor sensitivity was enhanced by optimizing the volume of SWCNTs ink used in the formation of the sensing network in the paper and the sweep segment of cyclic voltammetry used for the electrochemical deposition of AuNPs. Additionally, the mechanism of the sensing strategy based on the electrochemical n-doping of As(0) to the AuNPs-SWCNTs sensing channel was investigated using a liquid-ion gated FET system. The As(III) concentration detected by the as-fabricated chemiresistive sensor is as low as 1.35 × 10 -5 μM which is even lower than the maximum permissible concentration in drinking water defined by the WHO. In this paper, we provide a simple strategy for developing paper-based chemiresistive sensors with unique properties for practical As(III) determination.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Phase transition in two-dimensional monolayer (1L)-molybdenum disulfide induced by atomic S-basal plane gliding via synchrotron X-ray monochromatic beam radiation for superior electronic performance

Here, in this work, we report a novel approach to reduce the channel resistance by inducing a phase transition behavior from 2H to 1T in a monolayer MoS 2 (1L-MoS 2 ) by a synchrotron X-ray monochromatic beam (mono-beam) radiation. The effects of the biphase structure by the mono-beam on the 1L-MoS2 film were investigated using Raman spectra, photoluminescence (PL) spectra, scanning tunneling microscopy, and scanning tunneling spectroscopy, respectively. Through material characterization, we identified that the lateral sliding of S-vacancies along the S-plane in the 1L-MoS 2 is the key reason for the origin of unidirectional phase transition. The precise phase engineering triggered by the mono-beam radiation process allows the realization of field-effect transistors (FET) with 2X improvement in mobility toward a high on/off ratio (~10 8 ) and a near-ideal subthreshold swing of ~88 mV per decade. The validity of the phase engineering could be further extended for its application as a memory device, exhibiting a gate tunable conduction modulation behavior and a high resistance ratio of ~10 2 at a gate bias of 5 V with endurance of ~100 cycles. Furthermore, an artificial neural network using the synaptic weight update with accuracy of ~93 % was achieved.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A review of crosstalk polymorphic circuits and their scalability

Using a control variable, the functionality of Polymorphic circuits can be modified, making them adaptable and useful for reconfiguring circuit behavior — all the way from gate level to system level. State-of-the art polymorphic circuits are based on custom non-linear circuit design or emerging devices such as ambipolar FET, configurable magnetic devices etc. While some of these approaches are inefficient in performance, others involve exotic devices. The Crosstalk computing based polymorphic circuits offer a fresh perspective. In Crosstalk, the interconnect interference between nanoscale metal lines is intentionally engineered to exhibit the programmable Boolean logic behavior. This approach relies on the coupling between metal lines and not on the transistors for computing, resulting in better scalability, security by obscurity, and fault tolerance by reconfiguration. Our novel approach is backed by the mathematical formulation that conveys the rationale to generalize and achieve a wide variety of polymorphic circuits. Our experiments, including design, simulation, and Power Performance Area (PPA) characterization results indicate that crosstalk circuits provide significant improvement in transistor count (about 3x), switching energy (2x), and speed (1.5x) for polymorphic logic circuits. In the best-case scenario, the transistor count reduction is 5x. This paper presents Crosstalk computing’s fundamentals, polymorphism and the scalability aspects to compete/co-exist with CMOS for digital logic implementations below 10 nm. Our scalability study uses Open Source 7 nm PDK, considers all process variation aspects and accommodates worst-case scenarios. The study results for various benchmark circuits show that the Crosstalk technology is a viable alternative to CMOS for digital logic implementations below 10 nm, having 48% density, 57% power, and 10% performance gains over equivalent CMOS counterparts. Finally, we compare Crosstalk Polymorphic Circuit design technique with similar approaches described in related works and discuss its features and constraints.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

Substitutional doping of 2D transition metal dichalcogenides for device applications: Current status, challenges and prospects

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as a class of materials with exceptional electronic, optical, and mechanical properties, making them highly tunable for diverse applications in nanoelectronics, optoelectronics, and catalysis. Here, this review focuses on substitutional doping of TMDs, a key strategy to tailor their properties and enhance device performance, with a focus on its applications over the past five years (2019–2024). We delve into both theoretical and experimental doping approaches, including established methods like chemical vapor transport (CVT) and chemical vapor deposition (CVD) alongside liquid phase exfoliation (LPE) and post-synthesis treatments. Advanced growth techniques are also explored. Challenges like dopant uniformity, concentration control, and stability are addressed. The influence of various dopants on the electronic band structure, carrier concentration, and defect engineering is analyzed in detail. We further explore recent advancements in utilizing doped TMDs for field-effect transistors (FETs), photodetectors, sensors, photovoltaics, optoelectronic devices, energy storage and conversion, and even quantum computers. By examining both the potential and limitations of substitutional doping, this review aims to propel future research and technological advancements in this exciting field.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Highly Emissive Semi-Ladder-Type Copolymers, Aggregation State, and Solution-Processed Organic Light-Emitting Transistor

An organic light-emitting transistor (OLET) integrates the logic function of a field-effect transistor (FET) with electroluminescence of a light-emitting diode (LED) into a single device. This has the potential to play an important role in smart displays, electrically pumped organic laser, and other flexible electronic devices. For achieving high-performance solution-processed OLET, three semiladder copolymers—TPTI-CC, TPTI-C, and TPTI-F—were developed in this study. It was found that variation in the chemical structure lead to significant differences in energy level, emission color, and intermolecular aggregation. High photoluminescence quantum yields (PLQY) was obtained in these three polymers. Solution-processed trilayered OLET devices were fabricated, which exhibited strong electroluminescence, balanced charge mobility, and external quantum efficiency (EQE) of 2.8%.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High-Mobility Hole Transport in Single-Grain PbSe Quantum Dot Superlattice Transistors

Epitaxially-fused superlattices of colloidal quantum dots (QD epi-SLs) may exhibit electronic minibands and high-mobility charge transport, but electrical measurements of epi-SLs have been limited to large-area, polycrystalline samples in which superlattice grain boundaries and intragrain defects suppress/obscure miniband effects. Systematic measurements of charge transport in individual, highly-ordered epi-SL grains would facilitate the study of minibands in QD films. Here, we demonstrate the air-free fabrication of microscale field-effect transistors (μ-FETs) with channels consisting of single PbSe QD epi-SL grains (2–7 μm channel dimensions) and analyze charge transport in these single-grain devices. The eight devices studied show p-channel or ambipolar transport with a hole mobility as high as 3.5 cm 2 V –1 s –1 at 290 K and 6.5 cm 2 V –1 s –1 at 170–220 K, one order of magnitude larger than that of previous QD solids. The mobility peaks at 150–220 K, but device hysteresis at higher temperatures makes the true mobility–temperature curve uncertain and evidence for miniband transport inconclusive.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Layer-by-Layer Thinning of PdSe 2 Flakes via Plasma Induced Oxidation and Sublimation

Controlled O2/Ar plasma exposure and subsequent low temperature inert atmosphere annealing of chemical vapor deposition (CVD) grown PdSe2 flakes etch PdSe2 layer-by-layer in an atomic layer etching-like (ALE) process. X-ray photoelectron spectroscopy (XPS) shows that exposure to a remote inductively coupled plasma (ICP) oxygen plasma oxidizes the top layer of the PdSe2 to form PdO2 and SeO2. After an in situ annealing, XPS shows no trace of PdO2 or SeO2, suggesting the byproducts are volatile at low temperature. Atomic force microscopy of PdSe2 exposed to various O2 + Ar plasmas (O2 = 25–100%) demonstrates a clear trend between the oxygen concentration and the number of layers etched per cycle. PdSe2 field effect transistors (FETs) were characterized at various stages of two ALE-like cycles, and the electrical properties are correlated to the oxidation and byproduct desorption and layer reduction.

Hoffmann, Anna↗
DOE OSTI2025

Raman Laser-Induced Structural Modification in CVD-Grown Monolayer MoS 2 for Multi-Purposed Nanofabrication

Molybdenum disulfide (MoS 2 ) has been extensively explored to be utilized as an electronic material in a variety of device applications. In particular, the tunability of MoS 2 enhances its electrical properties making it an intriguing candidate for field-effect transistors (FETs), while also extending beyond electrical properties to structural phase engineering. Laser-induced modifications, particularly with Raman lasers, offer a straightforward method to modulate materials via thermal processes with precise patterning control and energy-level flexibility. However, most studies on the modification of MoS 2 have focused on multilayered structures or have been conducted under low-power laser conditions, leaving the feasibility of structural modifications in monolayer MoS 2 elusive. In this study, we fundamentally elucidated the effects of high-power Raman laser irradiation on the surface of chemical vapor deposition (CVD)-grown monolayer MoS 2 under ambient conditions and uncovered the underlying mechanisms of laser-induced modifications by applying intense photon energy with highly interactive reactions. Our results revealed both etching and deposition phenomena in two discernible regions, and it can be demonstrated by intensity regimes based on the spatial distribution of laser irradiance within the laser-irradiated spot. Furthermore, phase transition was found to be inhibited due to the promoted oxidation and the deposition of hydrogenated amorphous carbon (a-C:H), and p-type doping was observed, likely occurring in the region beneath the a-C:H deposition as substitutional doping on the 2H phase of MoS 2 . To compare the thermal effects, MoS 2 modifications were further analyzed using simplified heat transfer estimations. In conclusion, these findings deepen our understanding of how Raman laser irradiation modifies MoS 2 under ambient conditions, providing guidelines for optimizing its modification processes.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Graphene nanoribbons initiated from molecularly derived seeds

Abstract Semiconducting graphene nanoribbons are promising materials for nanoelectronics but are held back by synthesis challenges. Here we report that molecular-scale carbon seeds can be exploited to initiate the chemical vapor deposition (CVD) synthesis of graphene to generate one-dimensional graphene nanoribbons narrower than 5 nm when coupled with growth phenomena that selectively extend seeds along a single direction. This concept is demonstrated by subliming graphene-like polycyclic aromatic hydrocarbon molecules onto a Ge(001) catalyst surface and then anisotropically evolving size-controlled nanoribbons from the seeds along $$\left\langle 110\right\rangle$$ 110 of Ge(001) via CH 4 CVD. Armchair nanoribbons with mean normalized standard deviation as small as 11% (3 times smaller than nanoribbons nucleated without seeds), aspect ratio as large as 30, and width as narrow as 2.6 nm (tunable via CH 4 exposure time) are realized. Two populations of nanoribbons are compared in field-effect transistors (FETs), with off-current differing by 150 times because of the nanoribbons’ different widths.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Constrained patterning of orientated metal chalcogenide nanowires and their growth mechanism

One-dimensional metallic transition-metal chalcogenide nanowires (TMC-NWs) hold promise for interconnecting devices built on two-dimensional (2D) transition-metal dichalcogenides, but only isotropic growth has so far been demonstrated. Here we show the direct patterning of highly oriented Mo 6 Te 6 NWs in 2D molybdenum ditelluride (MoTe 2 ) using graphite as confined encapsulation layers under external stimuli. The atomic structural transition is studied through in-situ electrical biasing the fabricated heterostructure in a scanning transmission electron microscope. Atomic resolution high-angle annular dark-field STEM images reveal that the conversion of Mo 6 Te 6 NWs from MoTe 2 occurs only along specific directions. Combined with first-principles calculations, we attribute the oriented growth to the local Joule-heating induced by electrical bias near the interface of the graphite-MoTe 2 heterostructure and the confinement effect generated by graphite. Using the same strategy, we fabricate oriented NWs confined in graphite as lateral contact electrodes in the 2H-MoTe 2 FET, achieving a low Schottky barrier of 11.5 meV, and low contact resistance of 43.7 Ω µm at the metal-NW interface. Our work introduces possible approaches to fabricate oriented NWs for interconnections in flexible 2D nanoelectronics through direct metal phase patterning.

36 MATERIALS SCIENCE↗
DOE OSTI2020

High broadband photoconductivity of few-layered MoS 2 field-effect transistors measured using multi-terminal methods: effects of contact resistance

Among the layered two dimensional semiconductors, molybdenum disulfide (MoS 2 ) is considered to be an excellent candidate for applications in optoelectronics and integrated circuits due to its layer-dependent tunable bandgap in the visible region, high ON/OFF current ratio in field-effect transistors (FET) and strong light–matter interaction properties. In this study, using multi-terminal measurements, we report high broadband photocurrent response ( R ) and external quantum efficiency (EQE) of few-atomic layered MoS 2 phototransistors fabricated on a SiO 2 dielectric substrate and encapsulated with a thin transparent polymer film of Cytop. The photocurrent response was measured using a white light source as well as a monochromatic light of wavelength λ = 400 nm–900 nm. We measured responsivity using a 2-terminal configuration as high as R = 1 × 10 3 A W -1 under white light illumination with an optical power P opt = 0.02 nW. The R value increased to 3.5 × 10 3 A W -1 when measured using a 4-terminal configuration. Using monochromatic light on the same device, the measured values of R were 10 3 and 6 × 10 3 A W -1 under illumination of λ = 400 nm when measured using 2- and 4-terminal methods, respectively. The highest EQE values obtained using λ = 400 nm were 10 5 % and 10 6 % measured using 2- and 4-terminal configurations, respectively. The wavelength dependent responsivity decreased from 400 nm to the near-IR region at 900 nm. The observed photoresponse, photocurrent–dark current ratio (PDCR), detectivity as a function of applied gate voltage, optical power, contact resistances and wavelength were measured and are discussed in detail. The observed responsivity is also thoroughly studied as a function of contact resistance of the device.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Percolative phase transition in few-layered MoSe 2 field-effect transistors using Co and Cr contacts

The metal-to-insulator phase transition (MIT) in two-dimensional (2D) materials under the influence of a gating electric field has revealed interesting electronic behavior and the need for a deeper fundamental understanding of electron transport processes, while attracting much interest in the development of next-generation electronic and optoelectronic devices. Although the mechanism of the MIT in 2D semiconductors is a topic under debate in condensed matter physics, our work demonstrates the tunable percolative phase transition in few-layered MoSe 2 field-effect transistors (FETs) using different metallic contact materials. Here, we attempted to understand the MIT through temperature-dependent electronic transport measurements by tuning the carrier density in a MoSe 2 channel under the influence of an applied gate voltage. In particular, we have examined this phenomenon using the conventional chromium (Cr) and ferromagnetic cobalt (Co) as two metal contacts. For both Cr and Co, our devices demonstrated n-type behavior with a room-temperature field-effect mobility of 16 cm 2 V −1 s −1 for the device with Cr-contacts and 92 cm 2 V −1 s −1 for the device with Co-contacts, respectively. Further, with low temperature measurements at 50 K, the mobilities increased significantly to 65 cm 2 V −1 s −1 for the device with Cr and 394 cm 2 V −1 s −1 for the device with Co-contacts. By fitting our experimental data to the percolative phase transition theory, the temperature-dependent conductivity data show a transition from an insulating-to-metallic behavior at a bias of ∼28 V for Cr-contacts and ∼20 V for Co-contacts. This cross-over of the conductivity can be attributed to an increase in carrier density as a function of the gate bias in temperature-dependent transfer characteristics. By extracting the critical exponents, we find that the transport behavior in the device with Co-contacts aligns closely with the 2D percolation theory. In contrast, the devices with Cr-contacts deviate significantly from the 2D limit at low temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Wide-Bandgap Semiconductor Amplifiers for Fusion Plasma Heating and Control

This paper discusses power electronics developed under the ARPA-E GAMOW program to support nuclear fusion power production. The goal of this project was to develop and assess the potential for wide-bandgap (WBG) semiconductor devices in power electronics to enable high-efficiency and high-voltage solid-state systems for fusion plasma generation, heating, and control. The power electronics use an architecture in which multiple high-power boards can be combined to produce megawatt-level power, where using multiple boards provides high reliability. Two main areas of power electronics boards are developed in this project for fusion plasma heating and control applications: (1) pulse generation and control and (2) radiofrequency generation. The first area is for boards capable of driving high-voltage millisecond pulses at high duty cycles. The envisioned application of these pulses is in plasma control of magnetohydrodynamic instabilities, plasma position, and edge-localized modes. Pulse-width modulation allows for the implementation of a wide variety of linear and nonlinear control systems. The boards developed for this project could actuate control coils based on digital input signals and can be parallelized to provide megawatts of output power. The design of the pulse generator is a low-side load switch. A load switch was designed and constructed that utilized 2-kV-rated field-effect transistor (FET)-based cascodes developed by Qorvo under this project to perform initial testing of these cascodes. The second area is being implemented using class E amplifiers with WBG devices and a reactance steering network to handle inductive or capacitive plasma loads. Applications include ion cyclotron resonance heating (ICRH) and high-harmonic fast-wave (HHFW) heating. A class E reactance steering network is demonstrated in modeling and experiment with a resistive-inductive load that models an inductively-coupled plasma. Power combining of boards with class E reactance steering networks is also simulated and demonstrated experimentally, to enable scaling up to high power. Modeling of high-power-density cooling and remaining useful life is conducted to enable reliable, effectively cooled high-power electronics for fusion applications.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

The CMOS Pseudo-Thyristor: a zero-static current discriminator circuit

We report a very low power discriminator circuit for pixelized detectors, called the Pseudo-Thyristor is described in this document. It is a positive feedback topology using regular PMOS and NMOS field-effect transistors (FET's) with zero static current. When a small charge is injected into the circuit, it flips rapidly due to the positive feedback and outputs a logic transition for further digitization. Simulation shows that in a 65 nm process, it is possible to achieve a detecting threshold below 5 fC while maintain the average power consumption below 10 micro-Watts when the hit occupancy is <10% for 40 MHz operation.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Effective Landau-type model of a Hf x Zr 1 - x O 2 -graphene nanostructure

Here, to describe the charge-polarization coupling in the nanostructure formed by a thin Hf x Zr 1-x O 2 film with a single-layer graphene as a top electrode, we develop the “effective” Landau-Ginzburg-Devonshire model. This approach is based on the parametrization of the Landau expansion coefficients for the polar (FE) and antipolar (AFE) orderings in thin Hf 1-x Zr x O 2 films from a limited number of polarization-field curves and hysteresis loops. The Landau expansion coefficients are nonlinearly dependent on the film thickness h and Zr/[Hf+Zr] ratio x, in contrast to h-independent and linearly x-dependent expansion coefficients of a classical Landau energy. We explain the dependence of the Landau expansion coefficients by the strong nonmonotonic dependence of the Hf 1-x Zr x O 2 film polar properties on the film thickness, grain size and surface energy. The proposed Landau free energy with five “effective” expansion coefficients, which are interpolation functions of x and h, describes the continuous transformation of polarization dependences on applied electric field and hysteresis loop shapes induced by the changes of x and h in the range 0 < x < 1 and 5 nm < h < 35 nm. Using the effective free energy, we demonstrated that the polarization of Hf 1-x Zr x O 2 film influences strongly on the graphene conductivity, and the full correlation between the distribution of polarization and charge carriers in graphene is revealed. In accordance with our modeling, the polarization of the (5 – 25) nm thick Hf 1-x Zr x O 2 films, which are in the ferroelectric-like or antiferroelectric-like states for the chemical compositions 0.35 ≤ x ≤ 0.95, determine the concentration of carriers in graphene and can control its field dependence. The result can be promising for creation of next generation Si-compatible nonvolatile memories and graphene-ferroelectric FETs, because the working voltages applied to the Hf 1-x Zr x O 2 film (which acts as a gate) can be relatively low (less than 2 V). These low voltages are sufficient to induce the pronounced hysteresis of ferroelectric polarization in the Hf 1-x Zr x O 2 gate, which, due to the strong electric coupling, induces the hysteresis of the graphene charge.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A 1MHz Oak Ridge AC / DC Converter for UAV Contactless Charger Implementation

In this paper, a 1 MHz single-phase Oak Ridge Converter (ORC) AC/DC wireless power transfer (WPT) system is introduced for unmanned air vehicle (UAV) charging applications. The proposed advanced solution eliminates the design, weight, volume, and the cost of the power factor correcting (PFC) front-end rectifier compared to the conventional practices. Additionally, grid power quality requirements can be achieved with the presented innovative idea. With this method, single stage WPT primary side uses the hybrid grid frequency and high frequency (60 Hz and 1 MHZ) from ac source through the coupler coils and to UAV battery with GaN FETs. Experimental results of the single-phase system is presented to confirm the mathematical analyses with the source voltage of 110 VAC, RMS and output voltage of 40 VDC at 1 kW power with 6 inches air gap between couplers. The primary coupler consists of a ferrite-backed single-turn coil with a radius of 1.5 ft, and the secondary coupler is made with an air-core single-turn coil with radius of 1.2 ft. The system overall ac to dc efficiency is measured 77 % acquiring 0.99 power factor (PF) and 3.3 % current total harmonic distortion (THD) at 1 kW power.

Asa, Erdem↗