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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5

Constrained GAN-Generated X-Ray CT Data For Self-Supervised And Foundation-Model Segmentation Of Concrete Microstructures

Three-dimensional characterization of materials using X-ray computed tomography (XCT) is challenging due to the complexity of internal structures, noise, and variations in resolution. Traditional computer vision models often struggle to accurately segment these images, particularly in domain-specific applications like materials science. While supervised deep learning approaches have been developed to address the limitations of conventional algorithms, they typically require large amounts of labeled training data and often fail to generalize across different datasets. Self-supervised, few-and zero-shot learning methods have gained prominence in natural image processing and segmentation tasks, but their application to scientific imaging remains limited due to the unique structural complexity, noise, and textural artifacts present in materials science data. In this work, we investigate how domain adaptation, leveraging physics-based and GAN-generated synthetic data, impacts segmentation performance. We introduce a modified Contrastive Unpaired Translation (CUT) model designed to generate realistic labeled data, which can be used for training, pre-training, and fine-tuning segmentation models for real XCT microstructure data. We evaluate the performance of two segmentation approaches: a self-supervised network (SSL-ALPNet) and a foundation model (Segment Anything Model), assessing their improvements when pre-trained and/or fine-tuned on the synthesized data. Our results demonstrate that leveraging synthetic data significantly enhances segmentation performance, particularly in challenging materials science applications.

Ziabari, Amir [ORNL] (ORCID:000000034776457X)↗

Supercontinuum generation in oxide and semiconductor materials (InP, Si, GaN, GaAs, PbMoO 4 , YVO 4 , ZGP, TiO 2 , diamond) pumped by radiation of the Cr:ZnS fs-MOPA system

Ultrashort light sources in the middle-infrared range are highly beneficial for applications such as gas molecular spectroscopy, remote sensing, atmospheric science, medical treatments, and light–matter interaction studies. Ultrafast lasers utilizing chromium-doped ZnS/Se (Cr:ZnS/Se) have proven to be robust and stable solutions within this spectral region. Nonlinear spectral broadening is fundamentally important, as it pushes the pulse duration limits imposed by the bandwidth of laser media. In this study, we demonstrate the spectral broadening and supercontinuum generation in several bulk materials, including InP, Si, GaN, GaAs, PbMoO 4 , YVO 4 , diamond, and TiO 2 , using pump radiation with up to 4 W average power centered at 2.35 µm from a Cr:ZnS femtosecond MOPA system. Some of the investigated materials have excellent potential as effective media for middle-infrared supercontinuum generation, demonstrating the feasibility of developing a single-cycle pulse middle-infrared laser system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Photoluminescence of Zn-implanted GaN

The photoluminescence spectrum of Zn-implanted GaN peaks at 2.87 eV at room temperature. The emission efficiency decreases linearly with the logarithm of the Zn concentration in the range from 1 x 10 to the 18th to 20 x 10 to the 18th Zn/cu cm.

Pankove, J. I.↗

Photoluminescence of ion-implanted GaN

Thirty-five elements were implanted in GaN. Their photoluminescence spectra were measured and compared to those of an unimplanted control sample. Most impurities emit a peak at about 2.15 eV. Mg, Zn, Cd, Ca, As, Hg, and Ag have more characteristic emissions. Zn provides the most efficient recombination center. A set of midgap states is generated during the damage-annealing treatment.

Pankove, J. I.↗

1.54 micron Emission from Erbium implanted GaN for Photonic Applications

The development of efficient and compact light sources operating at 1.54 micron is of enormous importance for the advancement of new optical communication systems. Erbium (1%) doped fiber amplifiers (EDFA's) or semiconductor lasers are currently being employed as near infrared light sources. Both devices, however, have inherent limitations due to their mode of operation. EDFA's employ an elaborate optical pumping scheme, whereas diode lasers have a strongly temperature dependent lasing wavelength. Novel light emitters based on erbium doped III-V semiconductors could overcome these limitations. Er doped semiconductors combine the convenience of electrical excitation with the excellent luminescence properties of Er(3+) ions. Electrically pumped, compact, and temperature stable optoelectronic devices are envisioned from this new class of luminescent materials. In this paper we discuss the potential of Er doped GaN for optoelectronic applications based on temperature dependent photoluminescence excitation studies.

Thaik, Myo↗

Coating MCPs with AlN and GaN

A development effort underway at the time of reporting the information for this article is devoted to increasing the sensitivity of microchannel plates (MCPs) as detectors of photons and ions by coating the MCPs with nitrides of elements in period III of the periodic table. Conventional MCPs are relatively insensitive to slowly moving, large-mass ions for example, ions of biomolecules under analysis in mass spectrometers. The idea underlying this development is to coat an MCP to reduce its work function (decrease its electron affinity) in order to increase both (1) the emission of electrons in response to impingement of low-energy, large-mass ions and (2) the multiplying effect of secondary electron emission. Of particular interest as coating materials having appropriately low or even negative electron affinities are gallium nitride, aluminum nitride, and ternary alloys of general composition Al(x)Ga(1-x)N (where 0<x<1). These materials exhibit attractively high degrees of chemical, mechanical, and thermal stability plus acceptably high resistance to sputtering. The electron-excitation cross sections of these materials are expected to exceed those of several other materials (including diamond) that are, variously, in use or under development for the same purpose. Moreover, by doping these materials with silicon, one can render them partly electrically conductive, thereby suppressing the undesired accumulation of electric charge that could otherwise occur during bombardment by ions. For experiments, thin films of AlN and GaN both undoped and doped with Si were deposited on commercial MCPs by radio-frequency molecular-beam epitaxy (also known as plasma-assisted molecular-beam epitaxy) at temperatures <200 C. This deposition technique is particularly suitable because (1) MCPs cannot withstand the higher deposition-substrate temperatures used to decompose constituent compounds in some other deposition techniques and (2) in this technique, the constituent Al, Ga, and N are supplied in elemental form, so that there is no need for thermal decomposition at the substrate surface. The nitride films thus formed were, variously, amorphous or polycrystalline. The nitride films were coated with surface layers of gold <100 thick. The MCPs were tested in a standard configuration in which the output stage of a first MCP was coupled to the input stage of a second MCP. Each pair of MCPs was mounted in a standard holder that included front and back contact rings and an anode for collecting the output electrons of the second MCP. The MCP pairs were biased at potentials between 1.7 and 1.9 kV, and count rates measured after preamplification and discrimination. To enable a direct comparison, in one pair, the second MCP was uncoated while the first MCP was coated over half its surface. The coated and uncoated sides of the half-coated MCP were exposed to fluxes of argon ions at kinetic energies of 1.0 and 0.5 keV. At 1.0 keV, the count rate for the coated side was about 2.3 times greater than that for the uncoated side; at 0.5 keV, the count rate for the coated side was about 1.8 times greater than that for the uncoated side.

Bensaoula, Abdelhakim↗

Operation of a New Half-Bridge Gate Driver for Enhancement - Mode GaN FETs, Type LM5113, Over a Wide Temperature Range

A new commercial-off-the-shelf (COTS) gate driver designed to drive both the high-side and the low-side enhancement-mode GaN FETs, National Semiconductor's type LM5113, was evaluated for operation at temperatures beyond its recommended specified limits of -40 C to +125 C. The effects of limited thermal cycling under the extended test temperature, which ranged from -194 C to +150 C, on the operation of this chip as well as restart capability at the extreme cryogenic and hot temperatures were also investigated. The driver circuit was able to maintain good operation throughout the entire test regime between -194 C and +150 C without undergoing any major changes in its outputs signals and characteristics. The limited thermal cycling performed on the device also had no effect on its performance, and the driver chip was able to successfully restart at each of the extreme temperatures of -194 C and +150 C. The plastic packaging of this device was also not affected by either the short extreme temperature exposure or the limited thermal cycling. These preliminary results indicate that this new commercial-off-the-shelf (COTS) halfbridge eGaN FET driver integrated circuit has the potential for use in space exploration missions under extreme temperature environments. Further testing is planned under long-term cycling to assess the reliability of these parts and to determine their suitability for extended use in the harsh environments of space.

Patterson, Richard↗

GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer....

AlGaN/GaN↗

Radiation Characterization of Commercial GaN Devices

Radiative feedback from primordial protostars and final mass of the first star Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. Based on previous materials and prototype device studies, it is expected that these commercial devices will be quite tolerant to the types of radiation encountered in space. This expectation needs to be verified and the study described herein was undertaken for that purpose. All of the parts discussed in this report are readily available commercially. The parts chosen for study are all targeted for RF applications. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by irradiating with 50 MeV protons, 2) a detailed DDD/TID study of one particular part type was performed by irradiating with 50 MeV protons, and 3) a SEB/SEGR test was performed on a variety of part types by irradiating with heavy ions. No significant degradation was observed in the tests performed in this study.

HEMT↗

A Novel Reconfigurable GaN Based Fully Solid-State Microwave Power Module for Communications/Radar Applications

The paper presents the design, integration, and performance of a novel S-/X-band, GaN based, fully solid-state microwave power module (SSMPM). The SSMPM includes diplexers, pre-amplifiers, a multi-stage medium power amplifier, SPDT switches, and CW/Pulsed high-power amplifiers. These components are synergistically integrated such that a single SSMPM is capable of being dynamically reconfigured to function as a S-/X-band amplifier for TT&C/telecommunications for command/science date downlink and radar for remote sensing onboard a planetary exploration spacecraft. The SSMPM is capable of delivering Psat of 39.5 dBm (~10 W CW) at S-band, Psat of 46.7 dBm (~45 W CW) at X-band, and Psat of 51.2 dBm (~122 W Pulsed) at X-band.

Microwave Amplifier↗

A Novel Reconfigurable GaN Based Fully Solid-State Microwave Power Module for Communications/Radar Applications

In this paper, we present as a proof-of-concept (POC) the design, integration, and performance of a novel reconfigurable GaN based fully solid-state MPM. The module synergistically integrates diplexers, pre-amplifiers, multistage medium power amplifiers (MPAs), SPDT switches, and CW/Pulsed high power amplifiers (HPAs) with a voltage sequencer, a DC blanking controller, and a low voltage electronic power conditioner. The POC SSMPM operates at both S-band and X-band to serve multiple roles. The SSMPM can be reconfigured to deliver Psat of 39 dBm (8 W CW) at S-band, Psat of 46 dBm (40 W CW) at X-band, and Psat of >50 dBm (>100 W Pulsed) at X-band. Lastly, our link budget calculations indicate that the SSMPM with Psat = 40 W when coupled to a 10 cm X-band transmit antenna on a low Earth orbiting (900 km) satellite can close a 1 Gbps (QPSK) data downlink to a 1 m receive antenna on ground with 3 dB margin.

Simons, Rainee N.↗

A Novel Reconfigurable GaN Based Fully Solid-State Microwave Power Module for Communications/Radar Applications

The paper presents as a proof-of-concept (POC) the design, integration, and performance of a novel reconfigurableS-/X-band, GaN based, fully solid-state microwave power module (SSMPM) to enable miniaturization of the overall RFsystem. The SSMPM includes diplexers, pre-amplifiers, a multistage medium power amplifier, SPDT switches, andCW/Pulsed high-power amplifiers. These components are synergistically integrated such that a single SSMPM is capable of being dynamically reconfigured to function as a CW S-/X-band amplifier for TT&C/science data downlink and as a pulsed X-band amplifier for remote sensing radar onboard a planetary exploration spacecraft. The POC SSMPM is capable of delivering Psat of 39 dBm (8 W CW) at S-band, P(sub sat) of 46 dBm (40 W CW) at X-band, and P(sub sat) of >50 dBm (>100 W Pulsed) at X-band.

Simons, Rainee N.↗

A W-Band Spatial Power-Combining Amplifier using GaN MMICs

In this paper, we describe a miniature powercombiner for monolithic millimetre-wave integrated circuit (MMIC) chips using spatial power-combining with cavity modes. We have designed GaN MMIC power amplifier chips for 94 GHz, and illustrate the concept of the W-Band Spatial Power Combining Amplifier (WSPCA). Using 1 Watt, 94 GHz MMIC chips in a two-way cavity mode combiner, we were able to achieve 2 Watts of output power with 9 dB gain and 15 % PAE. This technique could be extended to high power MMICs and larger numbers of chips to achieve higher output power in a compact size. The applications include earth science radar, but may be extended to other applications requiring wider bandwidth.

Gawande, Rohit↗

Ka-Band GaN-on-SiC MMIC Balanced High Power Amplifier for NASA's Lunar Missions

The feasibility of Ka-band GaN-on-SiC MMIC based balanced power amplifier for science data downlinks from NASA’s lunar mission assets in space is investigated. The balanced amplifier combines the RF output power from two power amplifiers using a rectangular waveguide based 3-dB hybrid coupler. The investigation includes characterizing the balanced amplifier for the overall RF output power, Gain, power added efficiency, RMS error vector magnitude for offset-QPSK, 8PSK, 16APSK, and 32APSK waveforms, 3rd order intermodulation products, and noise figure. The balanced amplifier has high output RF power and good linearity and can support high data rate downlinks from the surface and vicinity of the Moon to Earth.

Gallium Nitride↗