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At least 91 records · Page 5

Ka-Band Wide-Bandgap Solid-State Power Amplifier: Hardware Validation

Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solid-state power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents proof-of-concept hardware used to validate power-combining technologies that may enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results in previous articles [1-3] indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. Previous architecture performance analyses and estimates indicate that the proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This combining efficiency would correspond to MMIC requirements of 5- to 10-W output power and >48 percent PAE. In order to validate the performance estimates of the three proposed architectures, measurements of proof-of-concept hardware are reported here.

Epp, L.↗

A Ka-Band Wide-Bandgap Solid-State Power Amplifier: Architecture Performance Estimates

Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solidstate power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents the results of a study to investigate power-combining technology and SSPA architectures that can enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results of the study indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. The proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This corresponds to MMIC requirements of 5- to 10-W output power and >48 percent PAE. For the three proposed architectures [1], detailed analysis and design of the power combiner are presented. The first architecture studied is based on a 16-way septum combiner that offers low loss and high isolation over the design band of 31 to 36 GHz. Analysis of a 2-way prototype septum combiner had an input match >25 dB, output match >30 dB, insertion loss <0.02 dB, and isolation >30 dB over the design band. A 16-way design, based on cascading this combiner in a binary fashion, is documented. The second architecture is based on a 24-way waveguide radial combiner. A prototype 24-way radial base was analyzed to have an input match >30 dB (under equal excitation of all input ports). The match of the mode transducer that forms the output of a radial combiner was found to be >27 dB. The functional bandwidth of the radial base and mode transducer, which together will form a radial combiner/divider, exceeded the design band. The third architecture employs a 32-way, parallel-plate radial combiner. Simulation results indicated an input match >24 dB, output match >22 dB, insertion loss <0.23 dB, and adjacent port isolation >20 dB over the design band. All three architectures utilize a low-loss MMIC amplifier module based on commercial MMIC packaging and a custom microstrip-to-rectangular-waveguide transition. The insertion loss of the module is expected to be 0.45 dB over the design band.

Epp, L.↗

Measuring the Photocatalytic Breakdown of Crystal Violet Dye using a Light Emitting Diode Approach

A simple method to estimate the photocatalytic reactivity performance of spray-on titanium dioxide coatings for transmissive glass surfaces was developed. This novel technique provides a standardized method to evaluate the efficiency of photocatalytic material systems over a variety of illumination levels. To date, photocatalysis assessments have generally been conducted using mercury black light lamps. Illumination levels for these types of lamps are difficult to vary, consequently limiting their use for assessing material performance under a diverse range of simulated environmental conditions. This new technique uses an ultraviolet (UV) gallium nitride (GaN) light emitting diode (LED) array instead of a traditional black light to initiate and sustain photocatalytic breakdown. This method was tested with a UV-resistant dye (crystal violet) applied to a titanium dioxide coated glass slide. Experimental control is accomplished by applying crystal violet to both titanium dioxide coated slides and uncoated control slides. A slide is illuminated by the UV LED array, at various light levels representative of outdoor and indoor conditions, from the dye side of the slide. To monitor degradation of the dye over time, a temperature-stabilized white light LED, whose emission spectrum overlaps with the dye absorption spectrum, is used to illuminate the opposite side of the slide. Using a spectrometer, the amount of light from the white light LED transmitted through the slide as the dye degrades is monitored as a function of wavelength and time and is subsequently analyzed. In this way, the rate of degradation for photocatalytically coated versus uncoated slide surfaces can be compared. Results demonstrate that the dye absorption decreased much more rapidly on the photocatalytically coated slides than on the control uncoated slides, and that dye degradation is dependent on illumination level. For photocatalytic activity assessment purposes, this experimental configuration and methodology minimizes many external variable effects and enables small changes in absorption to be measured. This research also compares the advantages of this innovative LED light source design over traditional mercury black light systems and non- LED lamp approaches. This novel technology begins to address the growing need for a standard method that can assess the performance of photocatalytic materials before deployment for large scale, real world use.

Ryan, Robert E.↗

An LED Approach for Measuring the Photocatalytic Breakdown of Crystal Violet Dye

A simple technique to assess the reactivity of photocatalytic coatings sprayed onto transmissive glass surfaces was developed. This new method uses ultraviolet (UV) gallium nitride (GaN) light-emitting diodes (LEDs) to drive a photocatalytic reaction (the photocatalytic breakdown of a UV-resistant dye applied to a surface coated with the semiconductor titanium dioxide); and then a combination of a stabilized white light LED and a spectrometer to track the dye degradation as a function of time. Simple, standardized evaluation techniques that assess photocatalytic materials over a variety of environmental conditions, including illumination level, are not generally available and are greatly needed prior to in situ application of photocatalytic technologies. To date, much research pertaining to this aspect of photocatalysis has been limited and has focused primarily on laboratory experiments using mercury lamps. Mercury lamp illumination levels are difficult to control over large ranges and are temporally modulated by line power, limiting their use in helping to understand and predict how photocatalytic materials will behave in natural environmental settings and conditions. The methodology described here, using steady-state LEDs and time series spectroradiometric techniques, is a novel approach to explore the effect of UV light on the photocatalytic degradation of a UV resistant dye (crystal violet). GaN UV LED arrays, centered around 365 nm with an adjustable DC power supply, are used to create a small, spatially uniform light field where the steady state light level can be varied over three to four orders of magnitude. For this study, a set of glass microscope slides was custom coated with a thinly sprayed layer of photocatalytic titanium dioxide. Crystal violet was then applied to these titanium-dioxide coated slides and to uncoated control slides. The slides were then illuminated at various light levels from the dye side of the slide by the UV LED array. To monitor dye degradation on the slides over time, a temperature-stabilized white light LED was used to illuminate the opposite side of the slides. As the dye degraded, the amount of light from the white light LED transmitted through the slide was monitored with a spectrometer and subsequently analyzed to determine and compare the rate of dye degradation for photocatalytically coated versus uncoated slide surfaces. The long-term stability of the spectrometer/white light LED combination, which required only a single reference spectra to be taken for a time series sequence of several hours, enabled accurate measurements of transmitted light over time. Time series transmission curves were generated and results demonstrated that over time the transmission increased much more rapidly on the coated slides than on the control slides. This experimental configuration and methodology for photocatalytic activity measurement minimizes many external variable effects and allows low light level studies to be performed. This study also compares the advantages of this novel LED light source design to traditional mercury lamp systems and non-LED lamp approaches that have conventionally been used. The methodology and experimental design research summarized in this abstract is partly funded by the Department of Homeland Security, Science and Technology Directorate, and by the NASA Stennis Space Center Innovative Partnerships Program.

Ryan, Robert E.↗

338-GHz Semiconductor Amplifier Module

Research findings were reported from an investigation of new gallium nitride (GaN) monolithic millimeter-wave integrated circuit (MMIC) power amplifiers (PAs) targeting the highest output power and the highest efficiency for class-A operation in W-band (75-110 GHz). W-band PAs are a major component of many frequency multiplied submillimeter-wave LO signal sources. For spectrometer arrays, substantial W-band power is required due to the passive lossy frequency multipliers.

Samoska, Lorene A.↗

Power Amplifier Module with 734-mW Continuous Wave Output Power

Research findings were reported from an investigation of new gallium nitride (GaN) monolithic millimeter-wave integrated circuit (MMIC) power amplifiers (PAs) targeting the highest output power and the highest efficiency for class-A operation in W-band (75-110 GHz). W-band PAs are a major component of many frequency multiplied submillimeter-wave LO signal sources. For spectrometer arrays, substantial W-band power is required due to the passive lossy frequency multipliers-to generate higher frequency signals in nonlinear Schottky diode-based LO sources. By advancing PA technology, the LO system performance can be increased with possible cost reductions compared to current GaAs PAs. High-power, high-efficiency GaN PAs are cross-cutting and can enable more efficient local oscillator distribution systems for new astrophysics and planetary receivers and heterodyne array instruments. It can also allow for a new, electronically scannable solid-state array technology for future Earth science radar instruments and communications platforms.

Fung, King Man↗

Radiation and Thermal Cycling Effects on EPC1001 Gallium Nitride Power Transistors

Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These include radiation, extreme temperatures, and thermal cycling, to name a few. Information pertaining to performance of electronic parts and systems under hostile environments is very scarce, especially for new devices. Such data is very critical so that proper design is implemented in order to ensure mission success and to mitigate risks associated with exposure of on-board systems to the operational environment. In this work, newly-developed enhancement-mode field effect transistors (FET) based on gallium nitride (GaN) technology were exposed to various particles of ionizing radiation and to long-term thermal cycling over a wide temperature range. Data obtained on control (un-irradiated) and irradiated samples of these power transistors are presented and the results are discussed.

Patterson, Richard L.↗

A Cross-Track Cloud-Scanning Dual-Frequency Doppler (C2D2) Radar for the Proposed ACE Mission and Beyond

The National Resource Council’s Earth Science Decadal Survey” (NRCDS) has identified the Aerosol/Climate/Ecosystems (ACE) Mission as a priority mission for NASA Earth science. The NRC recommended the inclusion of "a cross-track scanning cloud radar with channels at 94 GHz and possibly 34 GHz for measurement of cloud droplet size, glaciation height, and cloud height". Several radar concepts have been proposed that meet some of the requirements of the proposed ACE mission but none have provided scanning capability at both 34 and 94 GHz due to the challenge of constructing scanning antennas at 94 GHz. In this paper, we will describe a radar design that leverages new developments in microwave monolithic integrated circuits (MMICs) and micro-machining to enable an electronically-scanned radar with both Ka-band (35 GHz) and W-band (94-GHz) channels. This system uses a dual-frequency linear active electronically-steered array (AESA) combined with a parabolic cylindrical reflector. This configuration provides a large aperture (3m x 5m) with electronic-steering but is much simpler than a two-dimension AESA of similar size. Still, the W-band frequency requires element spacing of approximately 2.5 mm, presenting significant challenges for signal routing and incorporation of MMICs. By combining (Gallium Nitride) GaN MMIC technology with micro-machined radiators and interconnects and silicon-germanium (SiGe) beamforming MMICs, we are able to meet all the performance and packaging requirements of the linear array feed and enable simultaneous scanning of Ka-band and W-band radars over swath of up to 100 km.

Aerosol/Climate/Ecosystems (ACE) Mission↗

Multi-Band and Multi-Function Reconfigurable Gallium Nitride Based Fully Solid-State Microwave Power Module for Cognitive Radio/Radar Platforms

This paper presents as a proof-of-concept (POC) the design, integration, and performance of a novel reconfigurable S-/X-band Gallium Nitride (GaN) based fully solid-state microwave power module (SSMPM) for the role as the transmit module in a cognitive radio (CR). The SSMPM synergistically integrates multiple amplifiers through diplexing and high power switches to enable a single SSMPM capable of functioning as both S-/X-band amplifiers for telemetry, tracking, and command (TT&C), telecommunications, and science data downlink or as X-band radar for proximity sensing onboard a planetary exploration spacecraft. Integration of an electric field shaping field plate (FP) onto the GaN high electron mobility transistors (HEMTs) in this SSMPM provides increased performance and reliability for operation in the harsh conditions of space. This SSMPM is capable of delivering saturated power (Psat) of 39 dBm (8 W continuous wave (CW)) at S-band, P(sub sat) of 43 dBm (20 W CW) at X-band, and P(sub sat) of >50 dBm (>100 W Pulsed) at X-band.

Simons, Rainee N.↗

Characterization and Commissioning of a Ka-Band Ground Station for Cognitive Algorithm Development

In 2018, the Cognitive Communications and Propagation projects completed installation and checkout testing of a new Ka-Band ground station at the NASA Glenn Research Center in Cleveland, Ohio. The Cognitive Algorithms Demonstration Testbed (CADeT) was developed to provide a fully characterized and controllable dynamic link environment to researchers looking to demonstrate hardware and software aligned with atmospheric sensing and cognitive algorithms. CADeT integrates a host of precision control and measurement systems in addition to repurposing a 5.5 meter beam-waveguide dish platform previously used with the Advanced Communications Technology Satellite (ACTS). This paper will discuss the laboratory testing of ground station components with a emphasis on elements vital to achieving link budget requirements including characterization of the new Gallium Nitride (GaN) Solid State Power Amplifier (SSPA) and far-field measurements of the new antenna feed. Finally, the paper discusses in-situ tests conducted with CADeT and the Tracking and Data Relay Satellite System (TDRSS) to validate laboratory results and make necessary link budget adjustments before reviewing the lessons learned.

Cameron M Seidl↗

Performance Evaluation of Isolated Gate Driver, ADuM4121, Under Exposure to Extreme Temperature

Electronics designed for use in space missions are expected to be exposed to harsh environment including radiation and extreme temperature, to name a few. Severe thermal swings are also encountered depending on planetary exploration, orbital orientation, and mission duration. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. In this work, the performance of an isolated gate driver for controlling power-level transistors, including gallium nitride (GaN) and silicon carbide (SiC) devices, was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Boomer, Kristen↗

Wide Bandgap Reliability and Application Guidelines

Wide Bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN) have emerged as promising technologies due to the advantages they offer over silicon (Si). Under the NASA Electronic Parts and Packaging (NEPP) Program, Glenn Research Center (GRC) supports a task called "Wide Bandgap Reliability and Application Guidelines." This presentation summarizes the work performed under this task, to be presented at the 2020 NEPP Electronics Technology Workshop in June 2020.

Wide Bandgap Semiconductors↗

Design of 1 kW Simplified Stirling Controller Using Capacitor-Based Power Factor Correction

Free-piston Stirling convertors hold potential for efficient, reliable thermal to electric power conversion, provided they are paired with a robust controller. This paper outlines work underway on a system-level optimization of a kW controller. Using simplified control and passive power factor correction (PFC) this design explores the possibility of reducing programmatic risk through system simplification. Efficiency is improved through incorporating wide-bandgap gallium nitride (GaN) switches, and PFC volume is minimized through the use of polymer multi-layer capacitors. This work is aimed at exploring new approaches for future Stirling space power concepts.

Stirling↗

Optimization, Design, and Demonstration of 1 kW Stirling Controller Using Capacitor-based Power Factor Correction

Free-piston Stirling convertors provide efficient, reliable thermal to electric power conversion, provided they are paired with a reliable controller. This paper outlines work underway on design concepts for kilowatt-class controllers. Using passive power factor correction (PFC) this design explores the possibility of reducing programmatic risk through system simplification. Efficiency is maximized through incorporating wide-bandgap gallium nitride (GaN) switches, and passive PFC volume is minimized through the use of polymer multi-layer capacitors. This work is aimed at exploring new approaches for future Stirling controllers.

Christopher Barth↗

Development of Gallium Nitride Monolithic Microwave Integrated Circuits for Ka-Band Remote Sensing

We have been developing gallium nitride (GaN)monolithic microwave integrated circuits (MMICs) towards thegoal of implementing a single chip transceiver frontend forcloud radar arrays at Ka-band. We present our first iterationdesign, fabrication and test cycle implementation of GaN poweramplifiers (PAs), low noise amplifiers (LNAs), driver amplifier,single-pole- double and triple throw switches, and voltagecontrolled attenuator. These components are necessary forimplementing a transceiver unit cell concept with digitalcalibration capabilities to enable scalable array sizes for radarand radiometry.

Cao, Yu↗

Extended Temperature Operation of Isolated, Precision Gate Driver, ADuM4120

Electronics used in space missions encounter exposure to extreme temperatures and operation under wide thermal swings. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. Extending the temperature range at which electronic parts can operate reliably leads to potential benefits resulting in improving reliability, reducing mass/weight, and simplifying thermal design due to elimination of thermal control elements and fewer parts count. In this work, the performance of an isolated, precision gate driver for controlling power-level transistors, including gallium nitride (GaN) and silicon carbide (SiC) devices, was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Wide Bandgap Power Electronics↗

Solid state protective smart plug device

A wireless-controlled smart plug device and methods of use and operation, using a solid state switch to provide electrical power from an outlet to a load, and provide protection against overload, short circuit, ground, arc, or voltage surge faults. The switch includes a bidirectional semiconductor switch with two back-to-back connected transistors, such as silicon power MOSFETs, silicon insulated-gate bipolar transistors (IGBTs), silicon carbide (SiC) transistors, or gallium nitride (GaN) transistors, each configured to control the current flow from the electrical receptacle to the external electrical load.

Shen, Zheng↗