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New thermoelectric materials comprise highly [111]-oriented twinned group IV alloys on the basal plane of trigonal substrates, which exhibit a high thermoelectric figure of merit and good material performance, and devices made with these materials.
The 60° rotated twin defect on {111} planes is one of the most common crystal structure defects in the cubic semiconductors. This defect has a sigma-3 grain boundary commonly called the sigma-3 twin defect on {111} plane. Sigma-3 twin defects are also frequently found in the group IV semiconductors (Si, Ge, C) in a diamond structure and other cubic zinc blende III-V and II-VI compound semiconductors such as GaP, InP, InGaAs, CdTd and ZnSe.
A review of melt preparation techniques is presented covering necessary phase relationships, synthesis/alloying and crystal growth of thermoelectric materials. The processes described require the knowledge of composition-temperature or composition- temperature-pressure phase diagrams. This knowledge enables the selection of the appropriate method of preparation, apparatus design and processing. The materials, from a technological point of view, will be roughly divided into three categories: low temperature materials (group V chalcogenides based on Bi2Te3), middle temperature materials (group IV chalcogenides based on PbTe) and high temperature materials (Si-Ge solid solutions). All known methods of preparation from melts are described, and a comparative analysis is given. (complete abstract)
The type IV pilus is a diverse molecular machine capable of conferring a variety of functions and is produced by a wide range of bacterial species. The ability of the pilus to perform host-cell adherence makes it a viable target for the development of vaccines against infection by human pathogens such as Pseudomonas aeruginosa . Here, the 1.3 Å resolution crystal structure of the N-terminally truncated type IV pilin from P. aeruginosa strain P1 (ΔP1) is reported, the first structure of its phylogenetically linked group (group I) to be discussed in the literature. The structure was solved from X-ray diffraction data that were collected 20 years ago with a molecular-replacement search model generated using AlphaFold ; the effectiveness of other search models was analyzed. Examination of the high-resolution ΔP1 structure revealed a solvent network that aids in maintaining the fold of the protein. On comparing the sequence and structure of P1 with a variety of type IV pilins, it was observed that there are cases of higher structural similarities between the phylogenetic groups of P. aeruginosa than there are between the same phylogenetic group, indicating that a structural grouping of pilins may be necessary in developing antivirulence drugs and vaccines. These analyses also identified the α–β loop as the most structurally diverse domain of the pilins, which could allow it to serve a role in pilus recognition. Studies of ΔP1 in vitro polymerization demonstrate that the optimal hydrophobic catalyst for the oligomerization of the pilus from strain K122 is not conducive for pilus formation of ΔP1; a model of a three-start helical assembly using the ΔP1 structure indicates that the α–β loop and the D-loop prevent in vitro polymerization.
The Observing Strategies Sub-group of IVS's Working Group 3 has been tasked with producing a vision for the following aspects of geodetic VLBI: antenna-network structure and observing strategies; source strength/structure/distribution; frequency bands, RFI; and field system and scheduling. These are high level considerations that have far reaching impact since they significantly influence performance potential and also constrain requirements for a number of other \VG3 sub-groups. The paper will present the status of the sub-group's work on these topics.
Published observational data on the Leo, Dorado, NGC 1400, NGC 5044, Antlia, Fornax, and Virgo groups of galaxies are analyzed in terms of the luminosity functions and morphological types of their members. The data sets employed are characterized, and the results are presented in extensive tables and graphs and discussed in detail. While the fractions of early and late galaxies in the groups are similar, the ratio of dwarfs to giants (D/G) in the early galaxies varies monotonically with the richness of the cluster, leading to artificial flattening at the faint end of the total luminosity function in environments with low D/G. The luminosity function for dwarfs in all environments is found to have a slope of about -1.3.
Crystalline lactic dehydrogenases in reaction with p-hydroxymercuribenzoate in urea
A library of mean UV stellar energy distributions is derived from IUE spectrophotometry of 218 stars. The spectra cover 1230-3200 A with a spectral resolution of about 6 A. They have been corrected for interstellar extinction and converted to a common flux and wavelength scale. Individual stars were combined into standard groups according to their continuum colors, observed UV spectral morphology, MK luminosity class, and metal abundance. The library consists of 56 groups: 21 dwarf(V), 8 subgiant(IV), 16 giant(III), and supergiant(I + II) groups, covering O3-M4 spectral types. A metal-poor sequence is included, containing four dwarf and two giant groups, as is a metal-enhanced sequence with a single dwarf, subgiant, and giant group. Spectral indices characterizing the continuum and several strong absorption features are examined as temperature, luminosity, and abundance diagnostics. The library is intended to serve as a basis for interpreting the composite UV spectra of a wide variety of stellar systems, e.g., elliptical galaxies, starburst systems, and high-redshift galaxies.
Recently, GeSn alloys have attracted much interest for direct-gap infrared photonics and as potential topological materials which are compatible with the semiconductor industry. However, for photonics, the high-Sn content required leads to low detectivity, associated with poor material quality, and the (>35 %) Sn required for topological properties have been out of reach experimentally. Here, we demonstrate that by patterning the Sn distribution within Ge, the electronic properties have a far greater tunability than is possible with the random alloy. For the GeSn δ-digital alloy (DA) formed by confining Sn atoms in atomic layer(s) along the [111] direction of Ge, we show that ∼ 10 % Sn can lead to a triple-point semimetal. These findings are understood in terms of Sn ordering causing spatial separation of Sn and Ge band edges, leading to band inversion. This mechanism can also lead to a weak topological insulator, Weyl semimetal, and enables tunable direct bandgaps down to 2 meV, covering the entire infrared range. This DA induced topological properties are also identified in compound semiconductors, such as InAs 1-x Sb x , showing the general applicability of the DA design for realizing topological properties on conventional semiconductor platforms. Furthermore, our findings not only point to a new class of currently unexplored topological systems accessible by epitaxy, but also establish the promise of low-Sn GeSn DAs for application as infrared laser diodes and photodetectors in Si photonic integrated circuits and infrared image sensors.
The one-electron bond-orbital model of Harrison (1973) for tetrahedrally coordinated solids is modified to a two-electron model using a generalization of Falicov and Harris' (1969) method for treating the hydrogen molecule. Expressions for nuclear-exchange and pseudodipolar interactions are obtained in terms of bond-orbital model parameters. The eigenfunctions and eigenvalues of the Hamiltonian are employed along with standard perturbation theory to calculate the energy shifts resulting from the application of an external electric field and induced by the magnetic interaction between the nuclear spins and the bond-electron spins. The quantitative predictions of the derived formulas are examined for real semiconductors involving elements and compounds from periodic groups III, IV, and V. It is concluded that the present two-electron model makes it possible to assess the quantitative effects of electron correlation in the anion-cation bond for both nonmagnetic properties (electric susceptibility, dielectric constant) and magnetic properties (nuclear-exchange and pseudodipolar interactions) of various materials.
An experimental study was conducted to determine whether alloy softening in Fe alloys is dependent on electron concentration and to provide a direct comparison of alloy softening and hardening in several binary Fe alloy systems having the same processing history. Alloy additions to Fe included the elements in the Periods 4-6 and the Groups IV-VIII with the exception of technetium. A total of 19 alloy systems was investigated, and hardness testing was the primary means of evaluation. Testing was carried out at four temperatures over a homologous temperature range of 0.043-0.227 times the absolute melting temperature of unalloyed Fe. Major conclusions are that the atomic radius ratio of solute-to-Fe is the key factor in controlling low-temperature hardness of the binary Fe alloys and that alloy softening rates at 77 K and alloy hardening rates at 411 K are correlated with this atomic radius ratio for 15 of the binary alloy systems. Mechanisms of alloy softening and hardening are proposed.
The Systematic studies of dopant (Group III, IV, or V) incorporation into silicon as a result of pulsed-laser annealing are reviewed. At low concentrations, dopant profiles measured after laser annealing can be compared to model calculations for redistribution by liquid-phase diffusion in order to determine the interfacial distribution coefficient K('). At high concentrations there is a limit (C sub s) to dopant incorporation into substitutional lattice sites. The mechanisms which limit dopant incorporation are discussed as well as the dependence of K(') and (max) on crystal orientation. Finally, measurements of interface temperatures, temperature profiles, and thermal gradients during rapid solidification are summarized.
The effect of alloying additives to the matrix of a composite on the high temperature solubility rate of a single component fiber was analyzed thermodynamically. With an example of binary Ni alloys, with Group IV-VI transition metals reinforced with W fibers, agreement between the calculated and experimental data was demonstrated.
Porous cross-linked polyimide networks are provided. The networks comprise an anhydride end-capped polyamic acid oligomer. The oligomer (i) comprises a repeating unit of a dianhydride and a diamine and terminal anhydride groups, (ii) has an average degree of polymerization of 10 to 50, (iii) has been cross-linked via a cross-linking agent, comprising three or more amine groups, at a balanced stoichiometry of the amine groups to the terminal anhydride groups, and (iv) has been chemically imidized to yield the porous cross-linked polyimide network. Also provided are porous cross-linked polyimide aerogels comprising a cross-linked and imidized anhydride end-capped polyamic acid oligomer, wherein the oligomer comprises a repeating unit of a dianhydride and a diamine, and the aerogel has a density of 0.10 to 0.333 g/cm.sup.3 and a Young's modulus of 1.7 to 102 MPa. Also provided are thin films comprising aerogels, and methods of making porous cross-linked polyimide networks.
Dr. Patricia Paviet is the Chair of the Generation IV International Forum – Education and Training Working Group. As such, she is overseeing and directing several initiative: The GIF webinar series and the Pitch your Gen IV Research competition. This group has launched a new initiative on knowledge management and knowledge preservation of advanced reactor systems and how lessons learned are passed on in an international context. The paper is a summary of the various GIF member countries’ strategies to preserve and transfer the knowledge of advanced reactors.
The first concrete actions toward a next generation system for geodetic VLBI began in 2003 when the IVS initiated Working Group 3 to investigate requirements for a new system. The working group set out ambitious performance goals and sketched out initial recommendations for the system. Starting in 2006, developments continued under the leadership of the VLBI2010 Committee (V2C) in two main areas: Monte Carlo simulators were developed to evaluate proposed system changes according to their impact on IVS final products, and a proof-of-concept effort sponsored by NASA was initiated to develop next generation systems and verify the concepts behind VLBI2010. In 2009, the V2C produced a progress report that summarized the conclusions of the Monte Carlo work and outlined recommendations for the next generation system in terms of systems, analysis, operations, and network configuration. At the time of writing: two complete VLBI2010 signal paths have been completed and data is being produced; a number of VLBI2010 antenna projects are under way; and a VLBI2010 Project Executive Group (V2PEG) has been initiated to provide strategic leadership.
In this paper, PN are used to determine accurate distances to three galaxies in the Leo I group - The E0 giant elliptical NGC 3379, its optical companion, the SB0 spiral NGC 3384, and the smaller E6 elliptical NGC 3377. In all three galaxies, the luminosity-specific PN number densities are roughly the same, and the derived stellar death rates are in remarkable agreement with the predictions of stellar evolution theory. It is shown that the shape of the forbidden O III 5007 A PN luminosity function is the same in each galaxy and indistinguishable from that observed in M31 and M81. It is concluded that the PN luminosity function is an excellent standard candle for early-type galaxies.
This volume of reports is the 2000 Annual Report of the International Very Long Base Interferometry (VLBI) Service for Geodesy and Astrometry (IVS). The individual reports were contributed by VLBI groups in the international geodetic and astrometric community who constitute the permanent components of IVS. The IVS 2000 Annual Report documents the work of the IVS components for the period March 1, 1999 (the official inauguration date of IVS) through December 31, 2000. The reports document changes, activities, and progress of the IVS. The entire contents of this Annual Report also appear on the IVS web site at http://ivscc.gsfc.nasa.gov/publications/ar2000. This book and the web site are organized as follows: (1) The first section contains general information about IVS, a map showing the location of the components, information about the Directing Board members, and the report of the IVS Chair; (2) The second section of Special Reports contains a status report of the IVS Working Group on GPS phase center mapping, a reproduction of the resolution making IVS a Service of the International Astronomical Union (IAU), and a reprint of the VLBI Standard Interface (VSI); (3) The next seven sections hold the component reports from the Coordinators, Network Stations, Operation Centers, Correlators, Data Centers, Analysis Centers, and Technology Development Centers; and (4) The last section includes reference information about IVS: the Terms of Reference, the lists of Member and Affiliated organizations, the IVS Associate Member list, a complete list of IVS components, the list of institutions contributing to this report, and a list of acronyms. The 2000 Annual Report demonstrates the vitality of the IVS and the outstanding progress we have made during our first 22 months.