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Results for “LINEAR CIRCUIT”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Encoding of linear kinetic plasma problems in quantum circuits via data compression

We propose an algorithm for encoding linear kinetic plasma problems in quantum circuits. The focus is on modelling electrostatic linear waves in a one-dimensional Maxwellian electron plasma. The waves are described by the linearized Vlasov–Ampère system with a spatially localized external current that drives plasma oscillations. This system is formulated as a boundary-value problem and cast in the form of a linear vector equation Aψ = b to be solved by using the quantum signal processing algorithm. The latter requires encoding of matrix A in a quantum circuit as a sub-block of a unitary matrix. We propose how to encode A in a circuit in a compressed form and discuss how the resulting circuit scales with the problem size and the desired precision.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1973

Analysis and synthesis of distributed-lumped-active networks by digital computer

The use of digital computational techniques in the analysis and synthesis of DLA (distributed lumped active) networks is considered. This class of networks consists of three distinct types of elements, namely, distributed elements (modeled by partial differential equations), lumped elements (modeled by algebraic relations and ordinary differential equations), and active elements (modeled by algebraic relations). Such a characterization is applicable to a broad class of circuits, especially including those usually referred to as linear integrated circuits, since the fabrication techniques for such circuits readily produce elements which may be modeled as distributed, as well as the more conventional lumped and active ones.

Source record↗
NASA NTRS2012

Total Dose Effects on Bipolar Integrated Circuits at Low Temperature

Total dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.

linear integrated circuits↗
NASA NTRS2008

Total Dose Effects on Single Event Transients in Linear Bipolar Systems

Single Event Transients (SETs) originating in linear bipolar integrated circuits are known to undermine the reliability of electronic systems operating in the radiation environment of space. Ionizing particle radiation produces a variety of SETs in linear bipolar circuits. The extent to which these SETs threaten system reliability depends on both their shapes (amplitude and width) and their threshold energies. In general, SETs with large amplitudes and widths are the most likely to propagate from a bipolar circuit's output through a subsystem. The danger these SET pose is that, if they become latched in a follow-on circuit, they could cause an erroneous system response. Long-term exposure of linear bipolar circuits to particle radiation produces total ionizing dose (TID) and/or displacement damage dose (DDD) effects that are characterized by a gradual degradation in some of the circuit's electrical parameters. For example, an operational amplifier's gain-bandwidth product is reduced by exposure to ionizing radiation, and it is this reduction that contributes to the distortion of the SET shapes. In this paper, we compare SETs produced in a pristine LM124 operational amplifier with those produced in one exposed to ionizing radiation for three different operating configurations - voltage follower (VF), inverter with gain (IWG), and non-inverter with gain (NIWG). Each configuration produces a unique set of transient shapes that change following exposure to ionizing radiation. An important finding is that the changes depend on operating configuration; some SETs decrease in amplitude, some remain relatively unchanged, some become narrower and some become broader.

Buchner, Stephen↗
NASA NTRS1973

Frequency control circuit for all-digital phase-lock loops

Phase-lock loop references all its operations to fixed high-frequency service clock operating at highest speed which digital circuits permit. Wide-range control circuit provides linear control of frequency of reference signal. It requires only two counters in combination with control circuit consisting only of flip-flop and gate.

Anderson, T. O.↗
NASA NTRS1988

Difference-Equation/Flow-Graph Circuit Analysis

Numerical technique enables rapid, approximate analyses of electronic circuits containing linear and nonlinear elements. Practiced in variety of computer languages on large and small computers; for circuits simple enough, programmable hand calculators used. Although some combinations of circuit elements make numerical solutions diverge, enables quick identification of divergence and correction of circuit models to make solutions converge.

Mcvey, I. M.↗
NASA NTRS1975

Hardening of MJS77 spacecraft against the Jupiter radiation belts

Results of the device characterization program to identify components of the Mariner Jupiter/Saturn spacecraft in need of radiation hardening to meet a total dose requirement of 5 trillion e/sq cm are presented. The parts to be tested, including bipolar transistors, JFETs, SCRs, CMOS devices, linear integrated circuits, Zener diodes and other radiation-sensitive parts, were identified by a worst case circuit analysis of the 20 major subsystems. The test samples were exposed to several levels of irradiation from a Dynamitron electron accelerator capable of producing a steady stream of electrons at energies up to 2.5 eV. The electrical parameters of the devices were measured immediately following irradiation to prevent annealing. CMOS devices and linear devices showed the most severe degradation in a moderate radiation environment, and significant degradation was produced at low current in bipolar transistors. Three methods used for screening a number of devices determined by circuit and shielding analyses to be unacceptable radiation-sensitive are described: diffusion and metallization lot screening; wafer lot screening; and irradiation-anneal screening.

W E Price↗
DOE OSTI2025

A quantum eigenvalue solver based on tensor networks

Electronic ground states are of central importance in chemical simulations, but have remained beyond the reach of efficient classical algorithms except in cases of weak electron correlation or one-dimensional spatial geometry. We introduce a hybrid quantum-classical eigenvalue solver that constructs a wavefunction ansatz from a linear combination of matrix product states in rotated orbital bases, enabling the characterization of strongly correlated ground states with arbitrary spatial geometry. The energy is converged via a gradient-free generalized sweep algorithm based on quantum subspace diagonalization, with a potentially exponential speedup in the off-diagonal matrix element contractions upon translation into compact quantum circuits of linear depth in the number of qubits. Chemical accuracy is attained in numerical experiments for both a stretched water molecule and an octahedral arrangement of hydrogen atoms, achieving substantially better correlation energies compared to a unitary coupled-cluster benchmark, with orders of magnitude reductions in quantum resource estimates and a surprisingly high tolerance to shot noise. This proof-of-concept study suggests a promising new avenue for scaling up simulations of strongly correlated chemical systems on near-term quantum hardware.

chemistry↗
NASA NTRS1977

A linear phase demodulator

Circuit operates on feedback principle to reduce modulation index of received signal, and thus reinserts carrier component in suppressed carrier signal. Device can demodulate phase-shift-keyed signals which do not have carrier component, and it has linear region of + or - 150 deg.

Rippy, R. R.↗
DOE OSTI2025

Scaling of energy delivered through an electrostatic discharge to a small series load

We study the energy delivered through a small-resistance series “victim” load during electrostatic discharge events in air. For gap lengths over 1 mm, the fraction of the stored energy delivered is mostly gap-length independent, with a slight decrease at larger gaps due to electrode geometry. The energy to the victim scales linearly with circuit capacitance and victim load resistance but is not strongly dependent on circuit inductance. This scaling leads to a simple approach to predicting the maximum energy that will be delivered to a series resistance for the case where the victim load resistance is lower than the spark resistance.

42 ENGINEERING↗
DOE OSTI2026

High-Q superconducting lumped-element resonators for low-mass axion searches

Low-frequency superconducting lumped-element resonators have recently attracted significant attention in the context of axion dark matter searches. Here, we present the design and implementation of a fixed-frequency superconducting resonator operating near 250 kHz, possessing an inductor volume of ∼1 liter and achieving an unloaded quality factor Q ≈ 2.1 × 10 6 . This resonator represents a significant improvement over the state of the art and informs the design of searches for low-mass axions.

Bosons↗
DOE OSTI2025

Evaluating Variable-Impedance Magnetically-Insulated Transmission Lines as a Risk-Mitigation Measure for Next-Generation Pulsed Power

This project has produced the first detailed characterizations of power flow resulting from applying the “variable-impedance MITL” concept to real-life systems in Sandia’s pulsed power program (Z and next-generation pulsed power (NGPP)). We present simulation results and analyses for constant-impedance versions of both Z and NGPP and survey the operational viability of several variable-impedance re-designs in the parameter space of linear tapers. Circuit modeling (SCREAMER/Bertha) was used to pinpoint promising candidate designs, and EM-PIC (Empire) simulations were used to evaluate these candidates more rigorously. This approach was particularly successful in the Z regime which resulted in the identification of several viable variable-impedance MITL designs for each level. The approach was more challenged in the operating space NGPP occupies, producing data points that speak to a more restrictive design space due to anode plasma turn-on. In the end, we were able to converge on one viable variable-impedance design for the highest inductance line (level “F”) and one for the highest current line (level “A”). Altogether, the body of simulation evidence presented in this report suggest there does exist flexibility in operating space for magnetically-insulated transmission lines (MITLs) having variable geometric impedance to be a potential enabling technology for safely increasing current delivery (and potentially lowering stack voltage) in pulsed-power drivers by manipulating electron losses; however, operating points for a particular design must be carefully screened. Circuit and EM-PIC modeling provided consistent verdicts in safe operating regimes for operational viability, but additional physics such as anode plasma turn-on which is included in Empire but not in SCREAMER/Bertha was found to be a critical factor affecting power flow that lead to different assessments between the codes. It is not always the case that the occurrence of anode plasma caused a design to fail (some designs turned on anode plasma yet still delivered load currents meeting design targets); the details matter such as how early in the pulse anode surfaces break down (and how large a region). However, in every case that it did fail it was found that the feedback from anode plasma was the cause (i.e., turning off the anode plasma model in Empire restored agreement with the circuit model prediction). As circuit simulations represent an efficient and practical means of surveying design space compared to more computationally-expensive approaches such as EM-PIC, it could be prudent to invest in the research and development of models to include the effects of anode plasma such as ion emission in circuit codes. The variable-impedance MITL design is a new concept that enables controlled manipulation of the initial electron losses in the outer MITL and can be tested on Z today. We encourage follow-on work to explore further optimization (including alternative variable-impedance profiles, e.g., having constant dZ/dR), and to confirm the major findings presented in this report by fielding test hardware on actual Z shots.

24 POWER TRANSMISSION AND DISTRIBUTION↗