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NASA NTRSDate not supplied

Parallelized Convolutional Interleaver Implementation for Efficient DDR Memory Access

Convolutional interleavers are used in many different communications systems to correct for burst errors due to atmospheric fades and scintillation. The interleaver size is related to the channel coherence time and the data rate. Small convolutional interleavers can be implemented in a field programmable gate array (FPGA) block random access memory (BRAM). However, large interleavers exceeding the size of the BRAM on the FPGA are necessary for channels with longer fades and higher data rates. Therefore, an implementation utilizing double data rate (DDR) memory external to the FPGA is necessary. Wide DDR memory data buses can make the use of DDR memory for convolutional interleavers inefficient when individual symbols are written to and read from the memory. DDR memory operational speeds can also limit the data rate of the interleaver. The Consultative Committee for Space Data Systems (CCSDS) Optical Communications High Photon Efficiency (HPE) standard utilizes a convolutional channel symbol interleaver. A previous implementation of the HPE standard utilized BRAM for the convolutional interleaver, but mission requirements for the upcoming Optical Artemis-2 Orion (O2O) communications demonstration dictate the use of an interleaver exceeding the size of the BRAM. An algorithm and method for implementing the convolutional interleaver in the FPGA with DDR memory is described in this paper.

optical communications↗

NASA NTRSDate not supplied

Parallelized convolutional interleaver implementation for efficient DDR memory access

Optical communications↗

NASA NTRS1998

Two memories for geographical slant: separation and interdependence of action and awareness

The present study extended previous findings of geographical slant perception, in which verbal judgments of the incline of hills were greatly overestimated but motoric (haptic) adjustments were much more accurate. In judging slant from memory following a brief or extended time delay, subjects' verbal judgments were greater than those given when viewing hills. Motoric estimates differed depending on the length of the delay and place of response. With a short delay, motoric adjustments made in the proximity of the hill did not differ from those evoked during perception. When given a longer delay or when taken away from the hill, subjects' motoric responses increased along with the increase in verbal reports. These results suggest two different memorial influences on action. With a short delay at the hill, memory for visual guidance is separate from the explicit memory informing the conscious response. With short or long delays away from the hill, short-term visual guidance memory no longer persists, and both motor and verbal responses are driven by an explicit representation. These results support recent research involving visual guidance from memory, where actions become influenced by conscious awareness, and provide evidence for communication between the "what" and "how" visual processing systems.

NASA Discipline Space Human Factors↗

NASA NTRS1976

Optical mass memories

Optical and magnetic variants in the design of trillion-bit read/write memories are compared and tabulated. Components and materials suitable for a random access read/write nonmoving memory system are examined, with preference given to holography and photoplastic materials. Advantages and deficiencies of photoplastics are reviewed. Holographic page composer design, essential features of an optical memory with no moving parts, fiche-oriented random access memory design, and materials suitable for an efficient photoplastic fiche are considered. The optical variants offer advantages in lower volume and weight at data transfer rates near 1 Mbit/sec, but power drain is of the same order as for the magnetic variants (tape memory, disk memory). The mechanical properties of photoplastic film materials still leave much to be desired.

Bailey, G. A.↗

NASA NTRS1978

A wide bandwidth CCD buffer memory system

A prototype system was implemented to demonstrate that CCD's can be applied advantageously to the problem of low power digital storage and particularly to the problem of interfacing widely varying data rates. CCD shift register memories (8K bit) were used to construct a feasibility model 128 K-bit buffer memory system. Serial data that can have rates between 150 kHz and 4.0 MHz can be stored in 4K-bit, randomly-accessible memory blocks. Peak power dissipation during a data transfer is less than 7 W, while idle power is approximately 5.4 W. The system features automatic data input synchronization with the recirculating CCD memory block start address. System expansion to accommodate parallel inputs or a greater number of memory blocks can be performed in a modular fashion. Since the control logic does not increase proportionally to increase in memory capacity, the power requirements per bit of storage can be reduced significantly in a larger system.

Siemens, K.↗

NASA NTRS1978

Test and evaluation of bubble memories

A description is presented of a test program which has shown that well-constructed bubble memories can operate reliably over long periods of time and at low error rates. Even the relatively high error rate of one memory during burn-in can be considered acceptable if compared with tape recorder standards. No wear-out mechanism or aging could be detected. Bubble memories are now considered suitable for long-duration space missions and certainly are suitable for many military and commercial applications. It must be recognized, however, that bubble memories are complex devices and not yet fully understood. While the particular memory tested may never find practical applications, it nevertheless has provided insight into performance characteristics considered typical of bubble memories.

Bahm, E.↗

NASA NTRS1979

Implementing a bubble memory hierarchy system

This paper reports on implementation of a magnetic bubble memory in a two-level hierarchial system. The hierarchy used a major-minor loop device and RAM under microprocessor control. Dynamic memory addressing, dual bus primary memory, and hardware data modification detection are incorporated in the system to minimize access time. It is the objective of the system to incorporate the advantages of bipolar memory with that of bubble domain memory to provide a smart, optimal memory system which is easy to interface and independent of user's system.

Segura, R.↗

NASA NTRS1980

A bubble memory module

A bubble memory module design providing flexibility for many user applications in spacecraft data recording is described. The memory module can be used with user-designed controllers with the memory organization determined by the application. Asynchronous data rates from zero to 1.33 Mbits/sec at minimum power are accomplished by using 8-chip memory cells with 100 K bit serial chips. The memory module is expandable from a 4 x 2 cell matrix to a 4 x 16 cell matrix corresponding to an expandable capacity of 6.55 M to 52.4 M bits. The module's design, utility in various memory systems, and user clocking scheme are described.

Hayes, P. J.↗

NASA NTRS1982

Short-term memory and dual task performance

Two hypotheses concerning the way in which short-term memory interacts with another task in a dual task situation are considered. It is noted that when two tasks are combined, the activity of controlling and organizing performance on both tasks simultaneously may compete with either task for a resource; this resource may be space in a central mechanism or general processing capacity or it may be some task-specific resource. If a special relationship exists between short-term memory and control, especially if there is an identity relationship between short-term and a central controlling mechanism, then short-term memory performance should show a decrement in a dual task situation. Even if short-term memory does not have any particular identity with a controlling mechanism, but both tasks draw on some common resource or resources, then a tradeoff between the two tasks in allocating resources is possible and could be reflected in performance. The persistent concurrence cost in memory performance in these experiments suggests that short-term memory may have a unique status in the information processing system.

Regan, J. E.↗

NASA NTRS1986

Memory and subjective workload assessment

Recent research suggested subjective introspection of workload is not based upon specific retrieval of information from long term memory, and only reflects the average workload that is imposed upon the human operator by a particular task. These findings are based upon global ratings of workload for the overall task, suggesting that subjective ratings are limited in ability to retrieve specific details of a task from long term memory. To clarify the limits memory imposes on subjective workload assessment, the difficulty of task segments was varied and the workload of specified segments was retrospectively rated. The ratings were retrospectively collected on the manipulations of three levels of segment difficulty. Subjects were assigned to one of two memory groups. In the Before group, subjects knew before performing a block of trials which segment to rate. In the After group, subjects did not know which segment to rate until after performing the block of trials. The subjective ratings, RTs (reaction times) and MTs (movement times) were compared within group, and between group differences. Performance measures and subjective evaluations of workload reflected the experimental manipulations. Subjects were sensitive to different difficulty levels, and recalled the average workload of task components. Cueing did not appear to help recall, and memory group differences possibly reflected variations in the groups of subjects, or an additional memory task.

Staveland, L.↗

NASA NTRS1985

Bubble memory module for spacecraft application

Bubble domain technology offers an all-solid-state alternative for data storage in onboard data systems. A versatile modular bubble memory concept was developed. The key module is the bubble memory module which contains all of the storage devices and circuitry for accessing these devices. This report documents the bubble memory module design and preliminary hardware designs aimed at memory module functional demonstration with available commercial bubble devices. The system architecture provides simultaneous operation of bubble devices to attain high data rates. Banks of bubble devices are accessed by a given bubble controller to minimize controller parts. A power strobing technique is discussed which could minimize the average system power dissipation. A fast initialization method using EEPROM (electrically erasable, programmable read-only memory) devices promotes fast access. Noise and crosstalk problems and implementations to minimize these are discussed. Flight memory systems which incorporate the concepts and techniques of this work could now be developed for applications.

Hayes, P. J.↗

NASA NTRS1987

Electronic implementation of associative memory based on neural network models

An electronic embodiment of a neural network based associative memory in the form of a binary connection matrix is described. The nature of false memory errors, their effect on the information storage capacity of binary connection matrix memories, and a novel technique to eliminate such errors with the help of asymmetrical extra connections are discussed. The stability of the matrix memory system incorporating a unique local inhibition scheme is analyzed in terms of local minimization of an energy function. The memory's stability, dynamic behavior, and recall capability are investigated using a 32-'neuron' electronic neural network memory with a 1024-programmable binary connection matrix.

Moopenn, A.↗

NASA NTRS1987

Neural network based feed-forward high density associative memory

A novel thin film approach to neural-network-based high-density associative memory is described. The information is stored locally in a memory matrix of passive, nonvolatile, binary connection elements with a potential to achieve a storage density of 10 to the 9th bits/sq cm. Microswitches based on memory switching in thin film hydrogenated amorphous silicon, and alternatively in manganese oxide, have been used as programmable read-only memory elements. Low-energy switching has been ascertained in both these materials. Fabrication and testing of memory matrix is described. High-speed associative recall approaching 10 to the 7th bits/sec and high storage capacity in such a connection matrix memory system is also described.

Daud, T.↗

NASA NTRS2002

Memory-Intensive Benchmarks: IRAM vs. Cache-Based Machines

The increasing gap between processor and memory performance has lead to new architectural models for memory-intensive applications. In this paper, we explore the performance of a set of memory-intensive benchmarks and use them to compare the performance of conventional cache-based microprocessors to a mixed logic and DRAM processor called VIRAM. The benchmarks are based on problem statements, rather than specific implementations, and in each case we explore the fundamental hardware requirements of the problem, as well as alternative algorithms and data structures that can help expose fine-grained parallelism or simplify memory access patterns. The benchmarks are characterized by their memory access patterns, their basic control structures, and the ratio of computation to memory operation.

Biswas, Rupak↗

NASA NTRS2010

Electrically Variable Resistive Memory Devices

Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.

Liu, Shangqing↗

NASA NTRS2013

Inferring Soil Moisture Memory from Streamflow Observations Using a Simple Water Balance Model

Soil moisture is known for its integrative behavior and resulting memory characteristics. Soil moisture anomalies can persist for weeks or even months into the future, making initial soil moisture a potentially important contributor to skill in weather forecasting. A major difficulty when investigating soil moisture and its memory using observations is the sparse availability of long-term measurements and their limited spatial representativeness. In contrast, there is an abundance of long-term streamflow measurements for catchments of various sizes across the world. We investigate in this study whether such streamflow measurements can be used to infer and characterize soil moisture memory in respective catchments. Our approach uses a simple water balance model in which evapotranspiration and runoff ratios are expressed as simple functions of soil moisture; optimized functions for the model are determined using streamflow observations, and the optimized model in turn provides information on soil moisture memory on the catchment scale. The validity of the approach is demonstrated with data from three heavily monitored catchments. The approach is then applied to streamflow data in several small catchments across Switzerland to obtain a spatially distributed description of soil moisture memory and to show how memory varies, for example, with altitude and topography.

Soil Moisture↗

NASA NTRS2008

Disturb testing in flash memories

Non-volatile memory technology as defined by NAND architecture flash memory continues to lead the process scaling and device shrinking efforts of the entire integrated circuit industry. 45- nm technology nodes are now producing commercial 32Gb devices. These latest 32Gb devices are pioneering new charge trapping memory cell technologies using metal gates and high-k dielectric materials. These cells are called TANOS and consist of tantalum-nitride, aluminum oxide (high k material), nitride, oxide, and silicon. Such high-density memories continue to revolutionize commercial electronics in terms of new high-speed data architectures and significant reductions in overall power and weight consumption. In stark contrast, nearly all science-based interplanetary and earth-orbiting NASA spacecraft are still designing in and around mid-1980s-level non-volatile technology with 1Mb Electrically Erasable Read-Only Memory (EEPROM) devices. NASA has typically shunned the use of modern flash devices because of radiation and reliability concerns due to the commercial-offthe– shelf (COTS) nature of the NAND flash technology. Given the significant potential increases in overall system capability these modern flash devices could bring to NASA missions, it is important to continue to investigate these devices. This report will investigate certain portions of the reliability performance of NAND flash devices, specifically the disturb properties. Understanding the possible limitations such new non-volatile memory technology presents to NASA is the goal of this report.

Freie, Michael↗

NASA NTRS2018

A Novel 3D DRAM Memory Cube Architecture for Space Applications

The first mainstream products in 3D IC design are memory devices where multiple memory tiers are horizontally integrated to offer manifold improvements compared with their 2D counterparts. Unfortunately, none of these existing 3D memory cubes are ready for harsh space environments. This paper presents a new memory cube architecture for space, based on vertical integration of Commercial Off-The-Shelf (COTS), 3D stacked, DRAM memory devices with a custom Radiation-Hardened-By-Design (RHBD) controller offering high memory capacity, robust reliability and low latency.Validation and evaluation of the ASIC controller will be conducted prior to tape-out on a custom FPGA-based emulator platform integrating the 3D-stack.

Yang-Scharlotta, Jean↗