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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

The effects of ion gun beam voltage on the electrical characteristics of NbCN/PbBi edge junctions

The authors have succeeded in fabricating high-quality submicron NbCN edge junctions using a technique which is commonly used to make Nb edge junctions. A modified commercial ion gun was used to cut an edge in SiO2/NbCN films partially covered with photoresist. An insulating barrier was then formed on the exposed edge by reactive ion beam oxidation, and a counterelectrode of PbBi was deposited. The electrical quality of the resulting junctions was found to be strongly influenced by the ion beam acceleration voltages used to cut the edge and to oxidize it. For low ion beam voltages, the junction quality parameter was as high as Vm = 55 mV (measured at 3 mV), but higher ion beam voltages yielded strikingly poorer quality junctions. In light of the small coherence length of NbN, the dependence of the electrical characteristics on ion beam voltage is presumably due to mechanical damage of the NbCN surface. In contrast, for similar ion beam voltages, no such dependence was found for Nb edge junctions.

Lichtenberger, A. W.↗
NASA NTRS1989

The 3F condensation polyimides: Review and update

Nine new condensation polyimides containing the phenyltrifluoroethylidene (3F) linkage were synthesized by the amic-acid route. Several other polyimides, including some with hexafluoroisopropylidene (6F) linkage, were also prepared as controls. Amic-acid solutions were characterized by determining their inherent viscosities prior to thermal conversion into polyimide films. Glass transition temperatures (T sub g), thermogravimetric analysis (TGA), and isothermal weight loss data (at 316, 371, and 371 C under 0.5 MPa air pressure) were obtained for the films. The films were pulverized into molding powders which, in turn, were thermally processed under pressure into neat resin disks. The disks were also characterized by T sub g's and 316 and 371 C isothermal weight losses. The film study identified two new polyimides with T sub g's greater than 371 C and two new polyimides with low rates of weight loss. The resin disks exhibited the same overall trends in T sub g and weight loss as the respective films, however the weight loss per unit surface area was always greater, presumably due to molecular degradation induced during preparation of the molding powders. The overall results indicate that polyimides containing the 3F linkage have T sub g's and thermo-oxidative stability comparable to polyimides containing the 6F group. Alternate technology was also shown by the synthesis of two new polyalkyl substituted 3F diamines and five more new 3F polymers. Their potential as photoresists was demonstrated by T sub g advancement after ultraviolet exposure. Last, four U.S. patents on 3F monomers and polymers were issued and up to eight more are pending.

Alston, William B.↗
NASA NTRS1989

Growth and patterning of laser ablated superconducting YBa2Cu3O7 films on LaAlO3 substrates

A high quality superconducting film on a substrate with a low dielectric constant is desired for passive microwave circuit applications. In addition, it is essential that the patterning process does not effect the superconducting properties of the thin films to achieve the highest circuit operating temperatures. YBa2Cu3O7 superconducting films were grown on lanthanum aluminate substrates using laser ablation with resulting maximum transition temperature (T sub c) of 90 K. The films were grown on a LaAlO3 which was at 775 C and in 170 mtorr of oxygen and slowly cooled to room temperature in 1 atm of oxygen. These films were then processed using photolithography and a negative photoresist with an etch solution of bromine and ethanol. Results are presented on the effect of the processing on T(sub c) of the film and the microwave properties of the patterned films.

Warner, J. D.↗
NASA NTRS1989

Effect of crystal orientation on anisotropic etching and MOCVD growth of grooves on GaAs

Grooves can be formed on GaAs by wet-chemical anisotropic etching of surfaces masked by photoresist stripes. The effect of crystal orientation on the shape of the grooves etched and on subsequent epitaxial growth by MOCVD is presented. The polar lattice increases the complexity of the etching and growth processes. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher order planes.

Bailey, Sheila G.↗
NASA NTRS1991

Grooved surfaces on InP

Formation of a textured or grooved front surface on a solar cell can increase the efficiency in several ways, including enhanced absorption and light trapping. In III-IV materials the (111) plane is chemically different form the (1'1'1') plane, and both etching and epitaxial deposition behave differently on these surfaces. The current state of profile etching in InP is summarized. Data are presented on novel geometries attainable as a function of etchant temperature and composition, substrate orientation and carrier concentration, and the oxide thickness between the substrate and the photoresist. Depending on dopant concentration, the same etchant can produce either anisotropic or isotropic grooves. V-grooved solar cells were manufactured on InP, and the improved optical absorption was demonstrated. Preferred parameters for various applications are listed and discussed.

Bailey, Sheila G.↗
NASA NTRS1991

Enhancing optical absorption in InP and GaAs utilizing profile etching

The current state of profile etching in GaAs and InP is summarized, including data on novel geometries attainable as a function of etchant temperature, composition, and rate; substrate orientation; carrier concentration; and oxide thickness between substrate and photoresist. V-grooved solar cells were manufactured with both GaAs and InP, and the improved optical absorption was demonstrated. Preferred parameters for various applications are listed and discussed.

Bailey, Sheila G.↗
NASA NTRS1990

Development of advanced silicon solar cells for Space Station Freedom

This report describes the development of large area high efficiency wrapthrough solar cells for Space Station Freedom. The goal of this contract was the development and fabrication of 8 x 8 cm coplanar back contact solar cells with a minimum output of 1.039 watts/cell. The first task in this program was a modeling study to determine the optimum configuration of the cell and to study the effects of surface passivation, substrate resistivity, and back surface field on the BOL and EOL performance. In addition, the optical stack, including the cell cover, AR coatings, and Kapton blanket, was modeled to optimize 'on orbit' operation. The second phase was a manufacturing development phase to develop high volume manufacturing processes for the reliable production of low recombination velocity boron back surface fields, techniques to produce smooth, low leakage wrapthrough holes, passivation, photoresist application methods, and metallization schemes. The final portion of this program was a pilot production phase. Seven hundred solar cells were delivered in this phase. At the end of the program, cells with average efficiencies over 13 percent were being produced with power output in excess of 1.139 watts/cell, thus substantially exceeding the program goal.

Lillington, David R.↗
NASA NTRS1991

Enhancing optical absorption in InP and GaAs utilizing profile etching

The current state of profile etching in GaAs and InP is summarized, including data on novel geometries attainable as a function of etchant temperature, composition, and rate; substrate orientation; carrier concentration; and oxide thickness between substrate and photoresist. V-grooved solar cells have been manufactured with both GaAs and InP, and the improved optical absorption demonstrated. Preferred parameters for various applications are listed and discussed.

Bailey, Sheila G.↗
NASA NTRS1993

Electrochemical patterning of amorphous carbon on diamond

The ability to pattern ion-implantation damaged or other nondiamond carbon on a diamond substrate is useful for fabricating a variety of devices. We accomplished such patterning by an unmasked implantation into a diamond substrate followed by photolithography and a selective electrochemical etch. The use of a high resistivity medium coupled with applied biases over 50 V permitted etching without requiring contact between the substrate and an electrode. Many electrolytes gave etches that exhibit high selectivity for nondiamond carbon over both diamond and dielectrics such as photoresist. Optical, electrical, and Raman spectroscopic measurements elucidate the effects of the etch on the implanted diamond surface.

Marchywka, Mike↗
NASA NTRS1993

Selective formation of porous silicon

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H20. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Fathauer, Jones↗
NASA NTRS1993

Microactuator production via high aspect ratio, high edge acuity metal fabrication technology

LIGA is a procession sequence which uses x-ray lithography on photoresist layers of several hundred micrometers to produce very high edge acuity photopolymer molds. These plastic molds can be converted to metal molds via electroplating of many different metals and alloys. The end results are high edge acuity metal parts with large structural heights. The LIGA process as originally described by W. Ehrfeld can be extended by adding a surface micromachining phase to produce precision metal parts which can be assembled to form three-dimensional micromechanisms. This process, SLIGA, has been used to fabricate a dynamometer on a chip. The instrument has been fully implemented and will be applied to tribology issues, speed-torque characterization of planar magnetic micromotors and a new family of sensors.

Guckel, H.↗
NASA NTRS1993

Selective formation of porous silicon

A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

Fathauer, Robert W.↗
NASA NTRS1999

Copper-Based OHMIC Contracts for the Si/SiGe Heterojunction Bipolar Transistor Structure

Silicon based heterojunction bipolar transistors (HBT) with SiGe base are potentially important devices for high-speed and high-frequency microelectronics. These devices are particularly attractive as they can be fabricated using standard Si processing technology. However, in order to realize the full potential of devices fabricated in this material system, it is essential to be able to form low resistance ohmic contacts using low thermal budget process steps and have full compatibility with VLSI/ULSI processing. Therefore, a study was conducted in order to better understand the contact formation and to develop optimized low resistance contacts to layers with doping densities corresponding to the p-type SiGe base and n-type Si emitter regions of the HBTS. These as-grown doped layers were implanted with BF(sub 2) up to 1 X 10(exp 16)/CM(exp 2) and As up to 5 x 10(exp 15)/CM2, both at 30 keV for the p-type SiGe base and n-type Si emitter layers, respectively, in order to produce a low sheet resistance surface layer. Standard transfer length method (TLM) contact pads on both p and n type layers were deposited using an e-beam evaporated trilayer structure of Ti/CufTi/Al (25)A/1500A/250A/1000A). The TLM pads were delineated by a photoresist lift-off procedure. These contacts in the as-deposited state were ohmic, with specific contact resistances for the highest implant doses of the order of 10(exp -7) ohm-CM2 and lower.

Das, Kalyan↗
NASA NTRS2000

Sub-Optical Lithography With Nanometer Definition Masks

Nanometer feature size lithography represents a major paradigm shift for the electronics and micro-electro-mechanical industries. In this paper, we discuss the capacity of dynamic focused reactive ion beam (FIB) etching systems to undertake direct and highly anisotropic erosion of thick evaporated gold coatings on boron-doped silicon X-ray mask membranes. FIB offers a new level of flexibility in micro fabrication, allowing for fast fabrication of X-ray masks, where pattern definition and surface alteration are combined in the same step which eliminates the whole lithographic process, in particular resist, resist development, electro-deposition and resist removal. Focused ion beam diameters as small as 7 nm can be obtained enabling fabrication well into the sub-20 nm regime. In preliminary demonstrations of this X-ray mask fabrication technique 22 nm width lines were milled directly through 0.9 microns of gold and a miniature mass spectrometer pattern was milled through over 0.5 microns of gold. Also presented are the results of the shadow printing, using the large depth of field of synchrotron high energy parallel X-ray beam, of these and other sub-optical defined patterns in photoresist conformally coated over surfaces of extreme topographical variation. Assuming that electronic circuits and/or micro devices scale proportionally, the surface area of devices processed with X-ray lithography and 20 nm critical dimension X-ray masks would be 0.5% that of contemporary devices (350 nm CD). The 20 CD mask fabrication represents an initial effort - a further factor of three reduction is anticipated which represents a further order-of-magnitude reduction in die area.

Hartley, Frank T.↗
NASA NTRS2001

Feasibility Study of Thin Film Thermocouple Piles

Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

Sisk, R. C.↗
NASA NTRS2001

UV Curable Polyimides

The development of UV curable polyimides for high-temperature applications is a growing area of research activity. The objective of this technology is an attempt to bypass many of the issues associated with "typical" high-temperature polymers. For example, the use of toxic or mutagenic monomers (i.e., many aromatic diamines) can be prevented. Also, it proves to be a viable means in circumventing the problems associated with high-processing temperature of polymers, which cause thermally induced processing stresses (i.e., microcracking). The approach that we have been pursuing is Diels-Alder Polymerization. In this approach, we are generating dienes with light instead of heat. This process is called photoenolization. Several bismaleimides and bisacrylates are used as the dienophiles. The method is fairly general and a wide variety of diketones and bismaleimides can be used. UV curability processes are advantageous due to the following: (1) With such a wide variety of monomers, it allows for the use of nontoxic/nonmutagenic monomers; (2) Polyimides cure at room temperature, which reduces thermally induced stresses; (3) It reduces processing and tooling cost; (4) There are many potential applications for this technology, i.e., thin films as alignment layers for LC displays, photoresists, and photonic material as well as a potential market for use as adhesives.

Meador, Michael↗
NASA NTRS2004

Fabrication of MEMS-Based Microshutter Arrays for Optical Transmission Selection

A MEMS-based programmable aperture mask is under development at the NASA Goddard Space Flight Center. Termed the Microshutter (u-shutter) Array, the device will be used to control the transmission of light, with both high efficiency and contrast, to a multi-object spectrometer on the James Webb Space Telescope. Fabrication of the p-shutter array employs several novel designs and processing techniques. The current generation of micro-shutters consists of 128x64 pixel arrays with unit cell dimensions of 100x200 microns. Shutters are patterned in silicon nitride and sit on a 100 micron silicon frame that is DRIE etched below each shutter. The front and back sides of the device are shown. A magnetic cobalt-iron alloy patterned on top of the shutter allows it to be actuated 90 degrees out-of-plane, into the frame, by an external magnetic field. An electrode on the shutter and a vertical electrode on the sidewall of the frame, approximately 90pm deep, allow them to be electrostatically latched in their rotated position. The vertical electrode is deposited and patterned on the backside of the frame in a single step using a directionally controlled evaporation. Individual addressing of shutters for electrostatic latching is accomplished via a crosspoint addressing scheme, with no on-chip active components. A portion of an array with shutters in the open, latched, and closed positions is shown. Light loss at shutter edges is minimized by an overhanging aluminum light-shield that is anchored to the frame. A photoresist sacrificial layer is used to raise the light-shield up and over the 2 micron gap that surrounds each pixel. After completion, arrays are subjected to life cycle, environmental and optical testing. Fabricated devices have survived 10(exp 6) actuation cycles at both room and cryogenic temperatures and a 14g rms launch-simulation test. Optical testing has shown contrast measurements between open and closed shutters up to 10000:1.

Lynch, Bernard A.↗
NASA NTRS2003

Thermoelectric microdevice fabricated by a MEMS-like electrochemical process

Microelectromechanical systems (MEMS) are the basis of many rapidly growing technologies, because they combine miniature sensors and actuators with communications and electronics at low cost. Commercial MEMS fabrication processes are limited to silicon-based materials or two-dimensional structures. Here we show an inexpensive, electrochemical technique to build MEMS-like structures that contain several different metals and semiconductors with three-dimensional bridging structures. We demonstrate this technique by building a working microthermoelectric device. Using repeated exposure and development of multiple photoresist layers, several different metals and thermoelectric materials are fabricated in a three-dimensional structure. A device containing 126 n-type and p-type (Bi, Sb)2Te3 thermoelectric elements, 20 microm tall and 60 microm in diameter with bridging metal interconnects, was fabricated and cooling demonstrated. Such a device should be of technological importance for precise thermal control when operating as a cooler, and for portable power when operating as a micro power generator.

Evaluation Studies↗