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New effects that complicate the application of linear devices in space are discussed, including enhanced damage at low dose rate and proton damage, which cause permanent degradtion.
Variability of the space radiation environment is investigated with regard to parts categorization for total dose hardness assurance methods. It is shown that it can have a significant impact. A modified approach is developed that uses current environment models more consistently and replaces the design margin concept with one of failure probability.
New effects that complicate the application of linear devices in space are discussed, including enhanced damage at low dose rate and proton damage, which cause permanent degradation. Transients produced by protons and heavy ions are also discussed.
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Topics discussed include radiation effects in devices; the basic mechanisms of radiation effects in structures and materials; radiation effects in integrated circuits; spacecraft charging and space radiation effects; hardness assurance for devices and systems; and radiation transport, energy deposition and charge collection. Papers are presented on the mechanisms of small instabilities in irradiated MOS transistors, on the radiation effects on oxynitride gate dielectrics, on the discharge characteristics of a simulated solar cell array, and on latchup in CMOS devices from heavy ions. Attention is also given to proton upsets in orbit, to the modeling of single-event upset in bipolar integrated circuits, to high-resolution studies of the electrical breakdown of soil, and to a finite-difference solution of Maxwell's equations in generalized nonorthogonal coordinates.
Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.
This document, the JSC Engineering Directorate Avionics Ionizing Radiation Effects Standard (AIRES), provides design, test, and analysis requirements to ensure electronic hardware meets functional, performance and reliability requirements in the mission ionizing radiation environment. This suite of activities is referred to as Radiation Hardening Assurance (RHA) and is an integral part of the hardware design process.
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A number of activities within NASA and the space community, as well as growing technology needs and supply chain changes have accelerated the need to expand the use of COTS parts within NASA. While the use of COTS has been formally institutionalized and deemed acceptable for Class D space missions and those with greater tolerance for risk, there is still a lack of understanding of how to most effectively use COTS in such high risk-tolerance missions, and no apparent path towards broad use in missions with much less tolerance for risk. However, the reality is that the fundamental limitations of technology associated with the military specification system combined with the need to fly newer technologies in upcoming flagship robotic missions and human space flight missions will ultimately demand a more expansive use of COTS. The infinite nature of COTS gives rise to numerous challenges in the selection, acceptance, testing, and usage of COTS when reliable operation is essential. This presentation will highlight some of the results of a NASA Engineering and Safety Center (NESC) study on the use of COTS parts, as well as many of the historical through current facts about parts assurance within Agency to provide a path forward for reliable use of COTS for a range of space applications and risk postures. In addition this presentation will dispel the myth that expanded use of COTS parts causes a new set of radiation threats to missions.
A number of activities within NASA and the space community, as well as growing technology needs and supply chain changes have accelerated the need to expand the use of COTS parts within NASA. While the use of COTS has been formally institutionalized and deemed acceptable for Class D space missions and those with greater tolerance for risk, there is still a lack of understanding of how to most effectively use COTS in such high risk-tolerance missions, and no apparent path towards broad use in missions with much less tolerance for risk. However, the reality is that the fundamental limitations of technology associated with the military specification system combined with the need to fly newer technologies in upcoming flagship robotic missions and human space flight missions will ultimately demand a more expansive use of COTS. The infinite nature of COTS gives rise to numerous challenges in the selection, acceptance, testing, and usage of COTS when reliable operation is essential. This presentation will highlight some of the results of a NASA Engineering and Safety Center (NESC) study on the use of COTS parts, as well as many of the historical through current facts about parts assurance within Agency to provide a path forward for reliable use of COTS for a range of space applications and risk postures. In addition this presentation will dispel the myth that expanded use of COTS parts causes a new set of radiation threats to missions.
Radiation effects on electronic systems and devices (particularly spacecraft systems) are examined with attention given to such topics as radiation transport, energy deposition, and charge collection; single-event phenomena; basic mechanisms of radiation effects in structures and materials; and EMP phenomena. Also considered are radiation effects in integrated circuits, spacecraft charging and space radiation effects, hardness assurance for devices and systems, and SGEMP/IEMP phenomena.
Although system-level radiation hardening can enable the use of high-performance components and enhance the capabilities of a spacecraft, hardening techniques can be costly and can compromise the very performance designers sought from the high-performance components. Moreover, such techniques often result in a complicated design, especially if several complex commercial microcircuits are used, each posing its own hardening challenges. The latter risk is particularly acute for Commercial-Off-The-Shelf components since high-performance parts (e.g. double-data-rate synchronous dynamic random access memories - DDR SDRAMs) may require other high-performance commercial parts (e.g. processors) to support their operation. For these reasons, it is essential that system-level radiation hardening be a coordinated effort, from setting requirements through testing up to and including validation.
Heavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diodes are examined to provide insight into the challenge of single-event effect hardening of SiC power devices.
Variability of the space radiation environment is investigated with regard to total dose specification for spacecraft electronics. It is shown to have a significant impact. A new approach is developed for total dose requirements that replaces the radiation design margin concept with failure probability during a mission.
Variability of the solar energetic particle environment is investigated for single-event-burnout reliability of silicon-carbide power metal-oxide-semiconductor field effect transistors. A probabilistic assessment of failure evaluates the benefits of de-rating voltage, shielding, and mission length. The Prediction of Solar particle Yields for Characterizing Integrating Circuits code is used to calculate a cumulative density function for the fluence of the environment. The lethal ion method is then used to determine what proportion of the environment will cause single-event-burnout. The operating voltage determines the lowest linear-energy-transfer particle that will cause single-event-burnout and that should be included in the environment distribution. The shielding and mission length also determine the final environment distribution of the mission fluence. Through calculating the reliability for different operating voltages, shielding, and mission length for a specific device, it is shown that shielding thickness and operating voltage have a large effect on reliability and can be traded off during the design.
Functional models are used to identify possible faults and system-level fault consequences. A risk factor is calculated to evaluate mitigation. The risk factor from different radiation-induced faults is compared with system telemetry from on-orbit data.
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