A semiconductor material research program
Feasibility of germanium-silicon alloy single crystals for fabrication of charged particle detectors
Alexander, P.↗
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Magnetic recording head and method of making same Patent
Magnetic recording head composed of ferrite core coated with thin film of aluminum-iron-silicon alloy
Kern, J. D.↗
High-Mobility Epitaxial Silicon Wafers
New technique produces high-mobility multilayer films suitable for use on silicon process line. New material is multilayer film of alternate layers of silicon and alloy of silicon and germanium. Films grown thus far have electron mobilities 50 percent greater than epitaxial silicon films grown previously.
Stermer, R. L., Jr↗
The T55-L-712 turbine engine compressor housing refurbishment project
A study was conducted to access the feasibility of reclaiming T55-L-712 turbine engine compressor housings with an 88 wt % aluminum -- 12 wt % silicon alloy applied by the plasma spray processes. Tensile strength testing was conducted on as-sprayed and thermally cycled test specimens which were plasma sprayed from 0.020 to 0.100 in. Satisfactory tensile strength valves were observed in the as-sprayed tensile specimens. There was essentially no decrease in tensile strength after thermally cycling the tensile specimens.
Leissler, George W.↗
Thin-Film Photovoltaics: Status and Applications to Space Power
The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.
Landis, Geoffrey A.↗
Modified Process For Formation Of Silicon Carbide Matrix Composites
Modified version of process for making SiC-fiber/SiC-matrix composite material reduces damage to SiC (SCS-6) fibers and to carbon-rich coatings on fibers. Modification consists of addition of second polymer-infiltration-and-pyrolysis step to increase carbon content of porous matrix before infiltration with liquid silicon or silicon alloy.
Behrendt, Donald R.↗
Defect Density Comparison of Detached versus Attached Bridgman Grown Germanium Crystals
Semiconductor Bridgman growth without contact between the growing crystal and the growth ampoule has been observed on Earth in the last few years during several experiments. Previously, this so-called detached or dewetted growth phenomenon occurred preferentially under microgravity conditions due to the absence of the hydrostatic pressure. Many theoretical as well as experimental investigations helped to provide a better understanding of the mechanism and to identify the parameters leading to the detachment. Thus, recent attempts to get stable detached growth under terrestrial conditions by Duffar et al. growing III-V compounds and our own group with germanium and germanium-silicon alloys were frequently successful. At this conference we present the results of several germanium growth experiments performed in pyrolytic boron nitride containers. To exert an influence on the pressure ratio above and below the melt we used closed-bottom and open-bottom containers. This resulted in mainly detached-grown single crystals with the closed-bottom crucibles and attached single crystals with the open-bottom tubes. Evidence of detached growth is obtained from the crystal surface with a combination of axial profilometer scans and optical and electron microscopy. Detailed investigations of the defect structure, which is the main focus of this presentation, have shown an improvement of the crystal quality in the detached-grown samples, with a strong reduction of the etch pit density by about two orders of magnitude.
Schweizer, M.↗
Laminar-Turbulent Transition in an Electromagnetically-Levitated Droplet
During experiments on the MSL-1 (First Microgravity Science Laboratory) mission of the Space Shuttle (STS-83 and STS-94, April and July 1997), a droplet of palladium-silicon alloy was electromagnetically levitated for viscosity measurements. For the non-deforming droplet, the resultant MHD flow inside the drop can be inferred from motion of impurity particulates on the surface. In the experiments, subsequent to melting, Joule heating produces a continuous reduction of viscosity of the fluid resulting in an acceleration of the flow with time. These observations indicate formation of a pair of co-rotating toroidal flow structures inside the spheroidal drop that undergo flow instabilities. As the fluid temperature rises, the amplitude of the secondary flow increases; and beyond a point, the tracers exhibit non-coherent chaotic motion signifying emergence of turbulence inside the drop. Assuming that the observed laminar-turbulent transition is shear-layer type, the internal structure of the toroidal loops is used to develop a semi- empirical correlation for the onset of turbulence. Our calculations indicate that the suggested correlation is in modest agreement with the experimental data, with the transition occurring at a Reynolds number of 600.
Hyers, R. W.↗
Laminar-Turbulent Transition in an Electromagnetically-Levitated Droplet
During experiments on the MSL-1 (First Microgravity Science Laboratory) mission of the Space Shuttle (STS-83 and STS-94, April and July 1997), a droplet of palladium-silicon alloy was electromagnetically levitated for viscosity measurements. For the non-deforming droplet, the resultant MHD flow inside the drop can be inferred from motion of impurity particulates on the surface. In the experiments, subsequent to melting, Joule heating produces a continuous reduction of viscosity of the fluid resulting in an acceleration of the flow with time. These observations indicate formation of a pair of corotating toroidal flow structures inside the spheroidal drop that undergo flow instabilities. As the fluid temperature rises, the amplitude of the secondary flow increases; and beyond a point, the tracers exhibit non-coherent chaotic motion signifying emergence of turbulence inside the drop. Assuming that the observed laminar-turbulent transition is shear-layer type, the internal structure of the toroidal loops is used to develop a semi-empirical correlation for the onset of turbulence. Our calculations indicate that the suggested correlation is in modest agreement with the experimental data, with the transition occurring at a Reynolds number of 600.
Hyers, Robert W.↗
Spin-Up Instability of a Levitated Molten Drop in MHD-Flow Transition to Turbulence
When an alternating magnetic field interacts with induced eddy currents in a conducting body, there will be a repulsive force between the body and the driving coil system generating the field. This repulsive force is the basis of electromagnetic levitation, which allows containerless processing of different materials. The eddy currents in the conducting body also generate Joule heating. Axial rotation of electromagnetically levitated objects is a common observation in levitation systems and often an undesirable side effect of such experiments on 1-g and -g. There have been recent efforts to use magnetic damping and suppress this tendency of body rotation. The first report of rotation in EML drops was attributed to a slight asymmetry of the shape and location of the levitation coils could change the axis and speed of rotation. Other theories of sample rotation include a frequency difference in the traveling electromagnetic waves and a phase difference in two different applied fields of the same frequency. All of these different mechanisms share the following characteristics: the torque is small, constant for constant field strength, and very weakly dependent on the sample's temperature and phase (solid or liquid). During experiments on the MSL-1 (First Microgravity Science Laboratory) mission of the Space Shuttle (STS-83 and STS-94, April and July 1997), a droplet of palladium-silicon alloy was electromagnetically levitated for viscosity measurements. For the non-deforming droplet, the resultant MHD flow inside the drop is inferred from motion of impurities on the surface. These observations indicate formation of a pair of co-rotating toroidal flow structures inside the spheroidal levitated drop that undergo secondary flow instabilities. As rise in the fluid temperature rises, the viscosity falls and the internal flow accelerates and becomes oscillatory; and beyond a point in the experiments, the surface impurities exhibit non-coherent chaotic motion signifying emergence of turbulence inside the drop. In this work, a background of these set of observations will be given followed by a presentation of our results on the digital particle tracking analysis that has been performed on a number of available videos. The analysis indicates that the levitated drop attains a constant rotational speed during the melting phase and formation of the co-rotating axi-symmetric laminar toroidal structures. However, the rate of axial rotation increases dramatically during the deformation of the toroidal structures anti their breakup into chaotic entities. This new data suggests an interaction between the flow inside the levitated molten drop and the driving coils in the experiments. Possible mechanisms for this interaction will be reviewed. The data will also be used to make an assessment of existing theories on droplet rotation.
Abedian, B.↗
Fe-57 Moessbauer Spectroscopy of Fulgurites: Implications for Chemical Reduction
The high temperature (superliquidus) processing of silicates often results in very reduced products, such as Si-bearing Fe metal in type-1 chondrules and in lunar regolith agglutinates. Previous work on fulgurites (the glassy products of the lightning strike fusion of sand, soil, or rock) found silicon metal and iron-silicon alloys inside the silicate glass. The mechanism for this extreme reduction is not yet understood. In this work, we begin a Fe-57 Moessbauer spectroscopy study as well as continuing a microprobe study of several fulgurites in order to better constrain the extent and process of Fe reduction.
Sheffer, A. A.↗
Nano-Multiplication-Region Avalanche Photodiodes and Arrays
Nano-multiplication-region avalanche photodiodes (NAPDs), and imaging arrays of NAPDs integrated with complementary metal oxide/semiconductor (CMOS) active-pixel-sensor integrated circuitry, are being developed for applications in which there are requirements for high-sensitivity (including photoncounting) detection and imaging at wavelengths from about 250 to 950 nm. With respect to sensitivity and to such other characteristics as speed, geometric array format, radiation hardness, power demand of associated circuitry, size, weight, and robustness, NAPDs and arrays thereof are expected to be superior to prior photodetectors and arrays including CMOS active-pixel sensors (APSs), charge-coupled devices (CCDs), traditional APDs, and microchannelplate/ CCD combinations. Figure 1 depicts a conceptual NAPD array, integrated with APS circuitry, fabricated on a thick silicon-on-insulator wafer (SOI). Figure 2 presents selected aspects of the structure of a typical single pixel, which would include a metal oxide/semiconductor field-effect transistor (MOSFET) integrated with the NAPD. The NAPDs would reside in silicon islands formed on the buried oxide (BOX) layer of the SOI wafer. The silicon islands would be surrounded by oxide-filled insulation trenches, which, together with the BOX layer, would constitute an oxide embedding structure. There would be two kinds of silicon islands: NAPD islands for the NAPDs and MOSFET islands for in-pixel and global CMOS circuits. Typically, the silicon islands would be made between 5 and 10 m thick, but, if necessary, the thickness could be chosen outside this range. The side walls of the silicon islands would be heavily doped with electron-acceptor impurities (p+-doped) to form anodes for the photodiodes and guard layers for the MOSFETs. A nanoscale reach-through structure at the front (top in the figures) central position of each NAPD island would contain the APD multiplication region. Typically, the reach-through structure would be about 0.1 microns in diameter and between 0.3 and 0.4 nm high. The top layer in the reach-through structure would be heavily doped with electron-donor impurities (n+-doped) to make it act as a cathode. A layer beneath the cathode, between 0.1 and 0.2 nm thick, would be p-doped to a concentration .10(exp 17)cu cm. A thin n+-doped polysilicon pad would be formed on the top of the cathode to protect the cathode against erosion during a metal-silicon alloying step that would be part of the process of fabricating the array.
Zheng, Xinyu↗
Influence of Containment on the Growth of Silicon-Germanium: A Materials Science Flight Project
A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction. The plans for the flight experiments will be described.
Volz, M. P.↗
Stability of Atmospheric-Pressure Plasma Induced Changes on Polycarbonate Surfaces
Polycarbonate films are subjected to plasma treatment in a number of applications such as improving adhesion between polycarbonate and silicon alloy in protective and optical coatings. The changes in surface chemistry due to plasma treatment have tendency to revert back. Thus stability of the plasma induced changes on polymer surfaces over desired time period is very important. The objective of this study was to examine the effect of ageing on atmospheric pressure helium-plasma treated polycarbonate (PC) sample as a function of treatment time. The ageing effects were studied over a period of 10 days. The samples were plasma treated for 0.5, 2, 5 and 10 minutes. Contact angle measurements were made to study surface energy changes. Modification of surface chemical structure was examined using, X-ray Photoelectron Spectroscopy (XPS). Contact angle measurements on untreated and plasma treated surfaces were made immediately, 24, 48, 72 and 96 hrs after treatment. Contact angle decreased from 93 deg for untreated sample to 30 deg for sample plasma treated for 10 minutes. After 10 days the contact angles for the 10 minute plasma treated sample increased to 67 deg, but it never reverted back to that of untreated surface. Similarly the O/C ratio increased from 0.136 for untreated sample to 0.321 for 10 minute plasma treated sample indication increase in surface energy.
Sharma, Rajesh↗
Influence of Containment on the Growth of Silicon-Germanium (ICESAGE): A Materials Science ISS Investigation
A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processinginduced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction. The plans for the flight experiments will be described.
Volz, M. P.↗
Influence of Containment on the Growth of Silicon-Germanium (ICESAGE): A Materials Science Investigation
A series of Ge Si crystal growth experiments are planned to be conducted in the Low 1-x x Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.
Volz, M. P.↗
Detached Solidification of Germanium-Silicon Crystals on the ISS
A series of Ge(sub 1-x) Si(sub x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.
Volz, M. P.↗
Detached Solidification of Germanium-Silicon Crystals on the ISS
A series of Ge(sub 1-x) Si(sub x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.
Volz, M. P.↗