Exploratory study of silicide, aluminide, and boride coatings for nitridation-oxidation protection of chromium alloys
Protective coatings for chromium alloys for use in advanced air breathing applications
Klopp, W. D.↗
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Silicide coatings for tantalum and columbium alloys Final summary report, 1 Apr. 1967 - 31 Dec. 1968
Tungsten, titanium, vanadium, and molybdenum modifier alloys for coating of tantalum base alloys
Shoemaker, H. E.↗
Oxidation-resistant silicide coating applied to columbium alloy screen
Coated screens withstand temperature cycling in special transpiration-cooling systems and provide porous surface that is effective at temperatures well above those limiting superalloy screen efficiency. Thickness of coating depends on time, temperature and activator concentration. Coatings are uniform and resistant to thermal cycling.
Torgerson, R. T.↗
Exploration of alloy surface and slurry modification to improve oxidation life of fused silicide coated niobium alloys
Edge and surface modifications of niobium alloys were investigated prior to coating with Si-20Cr-20Fe and slurry composition modification for performance in a 1370 C ambient pressure slow cycle test. The best coating obtained was Si-20Cr-20Mn with an average life of 63 cycles, compared to 40 for Si-20Cr-20Fe on FS-85 (100 percent improvement in weight parity life). Edge beading extended the lives of Si-20Cr-20Fe-coated Cb-752 and FS-85 to 57 and 41 cycles respectively (50 and 20 percent improvements in weight parity life respectively). W, Al2O3 and ZrO2(CaO) surface modifications altered coating crack frequency and microstructure and increased life somewhat.
Levine, S. R.↗
Exploration of alloy surface and slurry modification to improve oxidation life of fused silicide coated niobium alloys.
Edge and surface modification of niobium alloys prior to coating with Si-20Cr-20Fe and slurry composition modification were investigated to improve performance in a 1370 C, ambient pressure, slow-cycle test. The best coating obtained was Si-20Cr-20Mn with an average life of 63 cycles compared to 40 for Si-20Cr-20Fe on FS-85 (100 percent improvement in weight parity life). Edge beading extended the lives of Si-20Cr-20Fe coated Cb-752 and FS-85 to 57 and 41 cycles, respectively (50 and 20 percent improvements in weight parity life, respectively).
Levine, S. R.↗
Microstructural and wear properties of sputtered carbides and silicides
Sputtered Cr3C2, Cr3Si2, and MoSi2 wear-resistant films (0.05 to 3.5 microns thick) were deposited on metal and glass surfaces. Electron transmission, electron diffraction, and scanning electron microscopy were used to determine the microstructural appearance. Strong adherence was obtained with these sputtered films. Internal stresses and defect crystallographic growth structures of various configurations within the film have progressively more undesirable effects for film thicknesses greater than 1.5 microns. Sliding contact and rolling element bearing tests were performed with these sputtered films. Bearings sputtered with a duplex coating (0.1-micron-thick undercoating of Cr3Si2 and subsequently 0.6-micron coating of MoS2) produced marked improvement over straight MoS2 films.
Spalvins, T.↗
Microstructural and wear properties of sputtered carbides and silicides
Sputtered Cr3C2, Cr3Si2, and MoSi2 wear-resistant films (0.05 to 3.5 microns thick) were deposited on metal and glass surfaces. Electron transmission, electron diffraction, and scanning electron microscopy were used to determine the microstructural appearance. Strong adherence was obtained with these sputtered films. Internal stresses and defect crystallographic growth structures of various configurations within the film have progressively more undesirable effects for film thicknesses greater than 1.5 microns. Sliding contact and rolling-element bearing tests were also performed with these sputtered films.
Spalvins, T.↗
Processing of fused silicide coatings for carbon-based materials
The processing and oxidation resistance of fused Al-Si and Ni-Si slurry coatings on ATJ graphite was studied. Ni-Si coatings in the 70 to 90 percent Si range were successfully processed to melt, wet, and bond to the graphite. The molten coatings also infiltrated the porosity in graphite and reacted with it to form SiC in the coating. Cyclic oxidation at 1200 C showed that these coatings were not totally protective because of local attack of the substrate, due to the extreme thinness of the coatings in combination with coating cracks.
Smialek, J. L.↗
Processing of fused silicide coatings for carbon-based materials
The processing and oxidation resistance of fused Al-Si and Ni-Si slurry coatings on ATJ graphite was studied. Ni-Si coatings in the 70 to 90 percent Si range were successfully processed to melt, wet, and bond to the graphite. The molten coatings also infiltrated the porosity in graphite and reacted with it to form SiC in the coating. Cyclic oxidation at 1200 C showed that these coatings were not totally protective because of local attack of the substrate, due to the extreme thinness of the coatings in combination with coating cracks. Previously announced in STAR as N83-27019
Smialek, J. L.↗
Silicide Schottky Barrier For Back-Surface-Illuminated CCD
Quantum efficiency of back-surface-illuminated charge-coupled device (CCD) increased by coating back surface with thin layer of PtSi or IrSi on thin layer of SiO2. In its interaction with positively-doped bulk Si of CCD, silicide/oxide layer forms Schottky barrier that repels electrons, promoting accumulation of photogenerated charge carriers in front-side CCD potential wells. Physical principle responsible for improvement explained in "Metal Film Increases CCD Output" (NPO-16815).
Hecht, Michael H.↗
Growing Cobalt Silicide Columns In Silicon
Codeposition by molecular-beam epitaxy yields variety of structures. Proposed fabrication process produces three-dimensional nanometer-sized structures on silicon wafers. Enables control of dimensions of metal and semiconductor epitaxial layers in three dimensions instead of usual single dimension (perpendicular to the plane of the substrate). Process used to make arrays of highly efficient infrared sensors, high-speed transistors, and quantum wires. For fabrication of electronic devices, both shapes and locations of columns controlled. One possible technique for doing this electron-beam lithography, see "Making Submicron CoSi2 Structures on Silicon Substrates" (NPO-17736).
Fathauer, Obert W.↗
Thin film molybdenum silicide as potential temperature sensors for turbine engines
Temperature measurements of Mo-Si-based thin-film resistance thermometers were studied. Annealing in an argon ambient at a temperature above 1000 C for at least 1 h is required to form the stable tetragonal MoSi2 phase. With a crack-free 2-micron-thick AlN barrier layer on top, a sensor was tested up to 1200 C. The resistivity vs temperature characteristic shows the room temperature resistivity and temperature coefficient of resistivity (TCR) of the sensor to be approximately 350 microohm and 0.01195 K, respectively. No film adhesion problems were observed for at least four testing cycles.
Ho, C. H.↗
Controllable surface-plasmon resonance in engineered nanometer epitaxial silicide particles embedded in silicon
Epitaxial CoSi2 particles in a single-crystal silicon matrix are grown by molecular-beam epitaxy using a technique that allows nanometer control over particle size in three dimensions. These composite layers exhibit resonant absorption predicted by effective-medium theory. Selection of the height and diameter of disklike particles through a choice of growth conditions allows tailoring of the depolarization factor and hence of the surface-plasmon resonance energy. Resonant absorption from 0.49 to 1.04 eV (2.5 to 1.2 micron) is demonstrated and shown to agree well with values predicted by the Garnett (1904, 1906) theory using the bulk dielectric constants for CoSi2 and Si.
Fathauer, R. W.↗
Columnar epitaxy of hexagonal and orthorhombic silicides on Si(111)
Columnar grains of PtSi and CrSi2 surrounded by high-quality epitaxial silicon are obtained by ultrahigh vacuum codeposition of Si and metal in an approximately 10:1 ratio on Si(111) substrates heated to 610-840 C. This result is similar to that found previously for CoSi2 (a nearly-lattice-matched cubic-fluorite crystal) on Si(111), in spite of the respective orthorhombic and hexagonal structures of PtSi and CrSi2. The PtSi grains are epitaxial and have one of three variants of the relation defined by PtSi(010)/Si(111), with PtSi 001 line/Si 110 line type.
Fathauer, R. W.↗
Subsurface Growth Of Silicide Structures In Silicon
Technique shows promise for fabrication of novel electronic, optoelectronic, and electro-optical devices. Experiments demonstrated feasibility of growing microscopic single-crystal CoSi2 structures beneath surfaces of Si substrates.
Fathauer, Robert W.↗
Development of Low-Noise High Value Chromium Silicide Resistors for Cryogenic Detector Applications
Extremely high sensitivity detectors, such as silicon bolometers are required in many NASA missions for detection of photons from the x-ray to the far infrared regions. Typically, these detectors are cooled to well below the liquid helium (LHe) temperature (4.2 K) to achieve the maximum detection performance. As photoconductors, they are generally operated with a load resistor and a pre-set bias voltage, which is then coupled to the input gate of a source-follower Field Effect Transistor (FET) circuit. It is imperative that the detector system signal to noise performance be limited by the noise of the detector and not by the noise of the external components. The load resistor value is selected to optimize the detector performance. These two criteria tend to be contradictory in that these detectors require load resistors in the hundreds of megaohms, which leads to a higher Johnson noise. Additionally, the physical size of the resistor must be small for device integration as required by such missions as the NASA High Resolution Airborne Wide-Band Camera (HAWC) instrument and the Submillimeter High Angular Resolution Camera (SHARC) for the Caltech Submillimeter Observatory (CSO). We have designed, fabricated and characterized thin film resistors using a CrSi/TiW/Al metal system on optical quality quartz substrates. The resistor values range from 100 megaohms to over 650 megaohms and are Johnson noise limited at LHe temperatures. The resistor film is sputtered with a sheet resistance ranging from 300 ohms to 1600 ohms and the processing sequence developed for these devices allows for chemically fine tuning the sheet resistance in-situ. The wafer fabrication process was of sufficiently high yield (>80%) providing clusters of good resistors for integrated multiple detector channels, a very important feature in the assembly of these two instruments.
Jhabvala, Murzy↗
Repairing Chipped Silicide Coatings on Refractory Metal Substrates
The space shuttle orbiter s reaction control system (RCS) is a series of small thrusters that use hypergolic fuels to orient the orbiter in space. The RCS thrusters are constructed from a special niobium-based alloy -- the C-103. This alloy retains excellent mechanical properties from cryogenic temperature all the way up to 2,500 F (1,370 C). C-103 is susceptible to rapid oxidation at elevated temperatures. The authors have developed two methods to repair damaged R512a coatings on C-103. For the first repair technique, metal foundries, semiconductor manufacturers, and many other industries have developed and routinely use coatings that can easily be painted on metal to protect it from corrosion, including oxidation, to temperatures in excess of 2,500 F (1,370 C). This first repair technique is considered somewhat temporary. The second repair technique is based on using the native coating material of the RCS nozzles. the chipped area is ground out and a "green" R512a coating is applied to the repair area. Both repair techniques can be applied for moderate protection until the permanent laser-repair technique is available to the repair area.
Youngquist, Robert↗
Mechanochemical Synthesis and Thermoelectric Properties of Magnesium Silicide and Related Alloys
The present invention provides a method of making a substantially phase pure compound including a cation and an anion. The compound is made by mixing in a ball-milling device a first amount of the anion with a first amount of the cation that is less than the stoichiometric amount of the cation, so that substantially all of the first amount of the cation is consumed. The compound is further made by mixing in a ball-milling device a second amount of the cation that is less than the stoichiometric amount of the cation with the mixture remaining in the device. The mixing is continued until substantially all of the second amount of the cation and any unreacted portion of anion X are consumed to afford the substantially phase pure compound.
Fleurial, Jean-Pierre↗