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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1997

Doping Scheme in Atomic Chain Electronics

Due to the dramatic reduction in MOS size, there appear many unwanted effects. In these small devices, the number of dopant atoms in the channel is not macroscopic and electrons may suffer significantly different scattering from device to device since the spatial distribution of dopant atoms is no longer regarded as continuous. This prohibits integration, while it is impossible to control such dopant positions within atomic scale. A fundamental solution is to create electronics with simple but atomically precise structures, which could be fabricated with recent atom manipulation technology. All the constituent atoms are placed as planned, and then the device characteristics are deviation-free, which is mandatory for integration. Atomic chain electronics belongs to this category. Foreign atom chains or arrays form devices, and they are placed on the atomically flat substrate surface. We can design the band structure and the resultant Fermi energy of these structures by manipulating the lattice constant. Using the tight-binding theory with universal parameters, it has been predicted that isolated Si chains and arrays are metallic, Mg chains are insulating, and Mg arrays have metallic and insulating phases [1]. The transport properties along a metallic chain have been studied, emphasizing the role of the contact to electrodes [2]. For electronic applications, it is essential to establish a method to dope a semiconducting chain, which is to control the Fermi energy position without altering the original band structure. If we replace some of the chain atoms with dopant atoms randomly, the electrons will see random potential along die chain and will be localized strongly in space (Anderson localization). However, if we replace periodically, although the electrons can spread over the chain, there will generally appear new bands and band gaps reflecting the new periodicity of dopant atoms. This will change the original band structure significantly. In order to overcome this dilemma, we may place a dopant atom beside the chain at every N lattice periods (N > 1). Because of the periodic arrangement of pant atoms, we can avoid the unwanted Anderson localization. Moreover, since the dopant atoms do not constitute the chain, the overlap interaction between them is minimized, and the band structure modification can be made smallest. Some tight-binding results will be discussed to demonstrate the present idea.

Toshishige, Yamada↗
NASA NTRS1981

Quantum chemical calculation of the equilibrium structures of small metal atom clusters

A decomposition of the molecular energy is presented that is motivated by the atom superposition and electron delocalization physical model of chemical binding. The energy appears in physically transparent form consisting of a classical electrostatic interaction, a zero order two electron exchange interaction, a relaxation energy, and the atomic energies. Detailed formulae are derived in zero and first order of approximation. The formulation extends beyond first order to any chosen level of approximation leading, in principle, to the exact energy. The structure of this energy decomposition lends itself to the fullest utilization of the solutions to the atomic sub problems to simplify the calculation of the molecular energy. If nonlinear relaxation effects remain minor, the molecular energy calculation requires at most the calculation of two center, two electron integrals. This scheme thus affords the prospects of substantially reducing the computational effort required for the calculation of molecular energies.

Kahn, L. R.↗
NASA NTRS1961

THEORETICAL STUDY OF ATOMIC AND MOLECULAR GASES AND THEIR REACTIONS IN THE UPPER ATMOSPHERE. SUMMARY OF WORK DONE IN THE PERIOD NOV. 1, 1960 TO APR. 30, 1961

In the previous report it was stated that the major mathematical problems of computations were nearly solved and an attempt is being made to start application of "Tables of Integrals" to the computation of the different states of atoms and molecules. In this respect I like to report that the computation of a number of states of atoms and molecules has been carried out. The results are so far confined only to the equilibrium distance of molecules. We are extending the calculation to other distances so as to compute potential energy curves of different states of molecules. We are also developing Thomas Fermi Statistical model of the atom to verify our results of more accurate calculation. The results so far have been very encouraging and I hope to report some of these results in the next paper.

Gas↗
NASA NTRS1986

Physics through the 1990s: Atomic, molecular and optical physics

The volume presents a program of research initiatives in atomic, molecular, and optical physics. The current state of atomic, molecular, and optical physics in the US is examined with respect to demographics, education patterns, applications, and the US economy. Recommendations are made for each field, with discussions of their histories and the relevance of the research to government agencies. The section on atomic physics includes atomic theory, structure, and dynamics; accelerator-based atomic physics; and large facilities. The section on molecular physics includes spectroscopy, scattering theory and experiment, and the dynamics of chemical reactions. The section on optical physics discusses lasers, laser spectroscopy, and quantum optics and coherence. A section elucidates interfaces between the three fields and astrophysics, condensed matter physics, surface science, plasma physics, atmospheric physics, and nuclear physics. Another section shows applications of the three fields in ultra-precise measurements, fusion, national security, materials, medicine, and other topics.

Source record↗
NASA NTRS1995

High rotational CO lines in post-AGB stars and PNe

A significant fraction of a star's initial mass is lost while it is on the Asymptotic Giant Branch (AGB). Mass loss rates range from 10(exp -7) solar mass/yr for early AGB stars to a few 10(exp -4) solar mass/yr for stars at the tip of the AGB. Dust grains condense from the outflow as the gas expands and form a dust shell around the central star. A superwind (approximately 10(exp -4) to 10(exp -3) solar mass/yr) is thought to terminate the AGB phase. In the post-AGB phase, the star evolves to a higher effective temperature, the mass loss decreases (approximately 10(exp -8) solar mass/yr), but the wind velocity increases (approximately 1000 km/s). During this evolution, dust and gas are exposed to an increasingly harsher radiation field and when T(sub eff) reaches about 30,000 K, the nebula is ionized and becomes a planetary nebula (PN). Photons from the central star can create a photodissociation region (PDR) in the expanding superwind. Gas can be heated through the photoelectric effect working on small grains and polycyclic aromatic hydrocarbons (PAH's). This gas can cool via the atomic fine structure lines of O I (63 microns and 145 microns) and C II (158 microns), as well as the rotational lines of CO. In the post-AGB phase, the fast wind from the central star will interact with the material ejected during the AGB phase. The shock caused by this interaction will dissociate and heat the gas. This warm gas will cool through atomic fine structure lines of O I and the rotational lines of (newly formed) CO.

Justtanont, K.↗
NASA NTRS1985

The structure and characterization of air-assisted swirl atomizer sprays

The detailed aerodynamic structure of air-assisted swirl atomizer sprays is investigated in this paper. In contrast to previously published papers on spray characterization, special emphasis is placed on the region near the atomizer exit where significant variation of the mean drop size and drop velocity occurs. Simple correlations are found for the spray mean drop size and some initial input parameters. Measurements of drop acceleration and deceleration can be well related to the line-of-sight variations in mean drop size and number density. It is found that the initial drop acceleration and spray dispersion cause the initial decrease of axial mean drop diameters and subsequent drop deceleration causes the increase of mean drop diameters.

Mao, C.-P.↗
NASA NTRS1995

Hydrogen Effects on GaAs, Status and Progress

It has been observed that GaAs devices in hermetically sealed packages when exposed to temperatures as low as 125oC can exhibit unacceptable degradation in both RF and DC characteristics. The source of the problem was found to be hydrogen that has been absorbed in the package's metals (Kovar, plating, etc.) and converted into atomic hydrogen within the Pt metallization of the gate structure. Subsequently, atomic hydrogen diffuses into the channel region of the FET structure and neutralizes the Si donors, resulting in a degradation of the device characteristics. Most of the data indicates the onslaught of the problem to occur after 500 hours at 125oC. This onslaught has been observed to be dependent on the thickness and processing conditions of the passivation layer, the sealing environment, and the amount of Pt or Pd in the gate structure of the device.

Hydrogen GaAs↗
NASA NTRS2000

Smallest Nanoelectronic with Atomic Devices with Precise Structures

Since its invention in 1948, the transistor has revolutionized our everyday life - transistor radios and TV's appeared in the early 1960s, personal computers came into widespread use in the mid-1980s, and cellular phones, laptops, and palm-sized organizers dominated the 1990s. The electronics revolution is based upon transistor miniaturization; smaller transistors are faster, and denser circuitry has more functionality. Transistors in current generation chips are 0.25 micron or 250 nanometers in size, and the electronics industry has completed development of 0.18 micron transistors which will enter production within the next few years. Industry researchers are now working to reduce transistor size down to 0.13 micron - a thousandth of the width of a human hair. However, studies indicate that the miniaturization of silicon transistors will soon reach its limit. For further progress in microelectronics, scientists have turned to nanotechnology to advance the science. Rather than continuing to miniaturize transistors to a point where they become unreliable, nanotechnology offers the new approach of building devices on the atomic scale [see sidebar]. One vision for the next generation of miniature electronics is atomic chain electronics, where devices are composed of atoms aligned on top of a substrate surface in a regular pattern. The Atomic Chain Electronics Project (ACEP) - part of the Semiconductor Device Modeling and Nanotechnology group, Integrated Product Team at the NAS Facility has been developing the theory of understanding atomic chain devices, and the author's patent for atomic chain electronics is now pending.

Yamada, Toshishige↗
NASA NTRS1981

Quantum chemical calculation of the equilibrium structures of small metal atom clusters

The application of ab initio quantum mechanical approaches in the study of metal atom clusters requires simplifying techniques that do not compromise the reliability of the calculations. Various aspects of the implementation of the effective core potential (ECP) technique for the removal of the metal atom core electrons from the calculation were examined. The ECP molecular integral formulae were modified to bring out the shell characteristics as a first step towards fulfilling the increasing need to speed up the computation of the ECP integrals. Work on the relationships among the derivatives of the molecular integrals that extends some of the techniques pioneered by Komornicki for the calculation of the gradients of the electronic energy was completed and a formulation of the ECP approach that quite naturally unifies the various state-of-the-art "shape- and Hamiltonian-consistent" techniques was discovered.

Kahn, L. R.↗
NASA NTRS1982

Quantum chemical calculation of the equilibrium structures of small metal atom clusters

Metal atom clusters are studied based on the application of ab initio quantum mechanical approaches. Because these large 'molecular' systems pose special practical computational problems in the application of the quantum mechanical methods, there is a special need to find simplifying techniques that do not compromise the reliability of the calculations. Research is therefore directed towards various aspects of the implementation of the effective core potential technique for the removal of the metal atom core electrons from the calculations.

Kahn, L. R.↗
NASA NTRS1996

Hydrogen Effects on GaAs Device Reliability

GaAs and InP devices in hermetically sealed packages have been observed to exhibit unacceptable degradation in both RF and DC characteristics. This degradation has been observed to occur at temperatures as low as 125oC. The source of the degradation has been linked to hydrogen gas that has been absorbed in the package's metals (Kovar, plating, etc.) and converted into atomic hydrogen within the Pt or Pd metallization of the gate structure. Subsequently, atomic hydrogen diffuses into the channel region of the FET structure and neutralizes the Si donors, resulting in a degradation of the device characteristics.

Gallium Arsenide↗
NASA NTRS1982

XPS Study of SiO2 and the Si/SiO2 Interface

X-ray photoelectron spectroscopy (XPS) is analytical technique for understanding electronic structure of atoms close to surface in solids, in preference to bulk structure of material. Study found evidence for core-level chemical shifts arising from changes in local structural environment in amorphous SiO2 and at Si/SiO2 interface. Observed XPS spectra may be understood as sequential convolution of several functions, each with well-defined physical interpretation.

Grunthaner, F. J.↗
NASA NTRS1994

Atomic oxygen reactor having at least one sidearm conduit

An apparatus for treating a microporous structure with atomic oxygen is presented. The apparatus includes a main gas chamber for flowing gas in an axial direction and a source of gas, containing atomic oxygen, connected for introducing the gas into the main gas chamber. The apparatus employs at least one side arm extending from the main atomic oxygen-containing chamber. The side arm has characteristic relaxation times such that a uniform atomic oxygen dose rate is delivered to a specimen positioned transversely in the side arm spaced from the main gas chamber.

Koontz, Steven L.↗
NASA NTRS1986

Some design constraints required for the assembly of software components: The incorporation of atomic abstract types into generically structured abstract types

It is nearly axiomatic, that to take the greatest advantage of the useful features available in a development system, and to avoid the negative interactions of those features, requires the exercise of a design methodology which constrains their use. A major design support feature of the Ada language is abstraction: for data, functions processes, resources, and system elements in general. Atomic abstract types can be created in packages defining those private types and all of the overloaded operators, functions, and hidden data required for their use in an application. Generically structured abstract types can be created in generic packages defining those structured private types, as buildups from the user-defined data types which are input as parameters. A study is made of the design constraints required for software incorporating either atomic or generically structured abstract types, if the integration of software components based on them is to be subsequently performed. The impact of these techniques on the reusability of software and the creation of project-specific software support environments is also discussed.

Johnson, Charles S.↗
NASA NTRS2008

Optimization of Neutral Atom Imagers

The interactions between plasma structures and neutral atom populations in interplanetary space can be effectively studied with energetic neutral atom imagers. For neutral atoms with energies less than 1 keV, the most efficient detection method that preserves direction and energy information is conversion to negative ions on surfaces. We have examined a variety of surface materials and conversion geometries in order to identify the factors that determine conversion efficiency. For chemically and physically stable surfaces smoothness is of primary importance while properties such as work function have no obvious correlation to conversion efficiency. For the noble metals, tungsten, silicon, and graphite with comparable smoothness, conversion efficiency varies by a factor of two to three. We have also examined the way in which surface conversion efficiency varies with the angle of incidence of the neutral atom and have found that the highest efficiencies are obtained at angles of incidence greater then 80deg. The conversion efficiency of silicon, tungsten and graphite were examined most closely and the energy dependent variation of conversion efficiency measured over a range of incident angles. We have also developed methods for micromachining silicon in order to reduce the volume to surface area over that of a single flat surface and have been able to reduce volume to surface area ratios by up to a factor of 60. With smooth micro-machined surfaces of the optimum geometry, conversion efficiencies can be increased by an order of magnitude over instruments like LENA on the IMAGE spacecraft without increase the instruments mass or volume.

Shappirio, M.↗