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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Visible charge-coupled device (CCD) focal plane design considerations for multispectral applications

The typical Multispectral Linear Array (MLA) Instrument mission would be to gather high-resolution, radiometrically accurate earth resources data in several spectral bands over a prolonged period of time. These bands would include the visible (VIS), near infrared (NIR) and short wavelength infrared. Silicon charge-coupled imaging devices (CCDs) can be assembled into contiguous pixel focal planes which will cover the VIS/NIR region and operate reliably for several years in a space environment. A typical MLA focal plane would have approximately 12,000 pixels, with a pixel-to-pixel registration requirement on the order of + or - 0.1 pixel. The technology to assemble such focal planes has been developed and is described. The problem of polarization sensitivity associated with certain types of focal plane assemblies is addressed. Radiation effects on CCDs are also discussed, and a practical solution to the problem through the use of shielding is described.

Sadowski, H.↗
NASA NTRS1987

Electro-optical characterization of the Tektronix TK512M-011 charge-coupled device

An electrooptical characterization encompassing linearity, blooming, dark-count rate, charge-transfer efficiency (CTE), and quantum efficiency, is presented for a front/side-illuminated CCD with 512x512 format and 27x27-micron pixels. The detailed noise characteristics of the CCD-output FET are reported. While very good low light level CTE is obtained in the parallel-shift direction, CTE problems arise in the serial direction. The output FET noise is equivalent to 5-12 electrons, depending on FET operating conditions and system bandwidth.

Epperson, Patrick M.↗
NASA NTRS1981

Subtleties in the flat-fielding of charge-coupled device /CCD/ images

Astronomical photometry with CCDs will often involve relatively low signal levels (less than 1000 charge carriers per pixel), at which nonlinear effects sometimes become significant. These effects will probably play a role in the processing of Space Telescope data. The problem apparently arises because signal charges are not read out equally completely from all columns and all pixels. It is shown that, although a first-order correction can be made by subtracting a low-level flat field from all frames before conventional processing, higher accuracy can be achieved by modeling the response with a nonlinear function.

Baum, W. A.↗
NASA NTRS1987

Charge-coupled-device parallel-to-serial converter

A CCD parallel-to-serial converter comprising two successions of charge transfer stages, recurrently side-loaded with respective ones of parallelly supplied charge packets, then serially unloaded by time-interleaved respective shift register operations. The charge packets converted to time-division-multiplexed serial form are supplied to a shared electrometer, and the electrometer response is de-multiplexed. Preferably, shift register operations are carried forward concurrently at the same rate, but with the final charge transfer stages clocked in phases staggered in time.

Tower, John R.↗
NASA NTRS1976

Charge coupled device integration-time coding for detection of images moving with unknown velocities

Existing techniques for the detection of a moving low light level image by a CCD array have required velocity synchronism between the image and the photogenerated charges. This was necessary to prevent blurring during the long duration of charge integration. A new detection scheme is described which causes the image to be convolved with a clock modulation signal as the photocharges are collected. The charge accumulating from each image point will now be spread over many photoelements due to the absence of velocity synchronism, but the output is not blurred in the usual sense. Instead the charge is distributed through the array in a controlled way so that the image can be reconstructed.

White, J. M.↗
NASA NTRS1987

Charge-coupled-device X-ray detector performance model

A model that predicts the performance characteristics of CCD detectors being developed for use in X-ray imaging is presented. The model accounts for the interactions of both X-rays and charged particles with the CCD and simulates the transport and loss of charge in the detector. Predicted performance parameters include detective and net quantum efficiencies, split-event probability, and a parameter characterizing the effective thickness presented by the detector to cosmic-ray protons. The predicted performance of two CCDs of different epitaxial layer thicknesses is compared. The model predicts that in each device incomplete recovery of the charge liberated by a photon of energy between 0.1 and 10 keV is very likely to be accompanied by charge splitting between adjacent pixels. The implications of the model predictions for CCD data processing algorithms are briefly discussed.

Bautz, M. W.↗
NASA NTRS2005

Event-driven charge-coupled device design and applications therefor

An event-driven X-ray CCD imager device uses a floating-gate amplifier or other non-destructive readout device to non-destructively sense a charge level in a charge packet associated with a pixel. The output of the floating-gate amplifier is used to identify each pixel that has a charge level above a predetermined threshold. If the charge level is above a predetermined threshold the charge in the triggering charge packet and in the charge packets from neighboring pixels need to be measured accurately. A charge delay register is included in the event-driven X-ray CCD imager device to enable recovery of the charge packets from neighboring pixels for accurate measurement. When a charge packet reaches the end of the charge delay register, control logic either dumps the charge packet, or steers the charge packet to a charge FIFO to preserve it if the charge packet is determined to be a packet that needs accurate measurement. A floating-diffusion amplifier or other low-noise output stage device, which converts charge level to a voltage level with high precision, provides final measurement of the charge packets. The voltage level is eventually digitized by a high linearity ADC.

Doty, John P.↗
NASA NTRS1981

Preliminary results from a single-photon imaging X-ray charge coupled device /CCD/ camera

A CCD camera is described which has been designed for single-photon X-ray imaging in the 1-10 keV energy range. Preliminary results are presented from the front-side illuminated Fairchild CCD 211, which has been shown to image well at 3 keV. The problem of charge-spreading above 4 keV is discussed by analogy with a similar problem at infrared wavelengths. The total system noise is discussed and compared with values obtained by other CCD users.

Griffiths, R. E.↗
NASA NTRS1981

Single photon X-ray imaging with charge-coupled devices /CCDs/

The paper describes a CCD camera facility designed and built for testing and characterization of CCDs in response to single X-ray photons in the 1-10 keV energy range. Results from the frontside-illuminated Fairchild 211 and 221 area imagers are presented; high quantum efficiency over the 3-6 keV range was verified. In order to avoid the problem of charge spreading at the higher energies, deep-depleted CCDs for soft X-ray imaging have been constructed, and good response was obtained at 6 keV. The present results are a first step toward the demonstration of the CCD as an appropriate device for at least the central part of the focal plane of a large X-ray telescope, e.g., the proposed Advanced X-ray Astrophysics Facility.

Griffiths, R. E.↗
NASA NTRS1987

Four-shooter - A large format charge-coupled device camera for the Hale telescope

The Hale telescope has employed an astronomical camera using four 800x800 CCDs in an optical arrangement that allows the imaging of a contiguous 1600-pixel-square region of the sky; reimaging optics are then used to yield a scale of 0.33 arcsec/pixel. Optical coatings are incorporated to yield a throughput at peak efficiency of nearly 50 percent, including telescope losses. This camera can be used in a scanning mode, in which the telescope tracking rate is offset and the charge is clocked in the chips in such a way that the charge image remains aligned with the optical image. Attention is given to the results of a survey for high-redshift quasars using this equipment, which has produced images for the most distant galaxy clusters yet discovered.

Gunn, James E.↗
NASA NTRS1993

Ultra low-noise charge coupled device

Special purpose CCD designed for ultra low-noise imaging and spectroscopy applications that require subelectron read noise floors, wherein a non-destructive output circuit operating near its 1/f noise regime is clocked in a special manner to read a single pixel multiple times. Off-chip electronics average the multiple values, reducing the random noise by the square-root of the number of samples taken. Noise floors below 0.5 electrons rms are possible in this manner. In a preferred embodiment of the invention, a three-phase CCD horizontal register is used to bring a pixel charge packet to an input gate adjacent a floating gate amplifier. The charge is then repeatedly clocked back and forth between the input gate and the floating gate. Each time the charge is injected into the potential well of the floating gate, it is sensed non-destructively. The floating gate amplifier is provided with a reference voltage of a fixed value and a pre-charge gate for resetting the amplifier between charge samples to a constant gain. After the charge is repeatedly sampled a selected number of times, it is transferred by means of output gates, back into the horizontal register, where it is clocked in a conventional manner to a diffusion MOSFET amplifier. It can then be either sampled (destructively) one more time or otherwise discarded.

Janesick, James R.↗
NASA NTRS1981

Texas Instruments /TI/ 800 x 800 charge-coupled device /CCD/ image sensor

Very-large area high-performance CCD image sensors with 800 x 800 pixel format have been successfully fabricated and operated on the basis of a three-level polysilicon gate technology. They are thinned to 8 microns over the entire 12.2 x 12.2 mm active area, and are used in the rear illumination mode. The light transfer characteristic has a gamma value of 1.000 + or - 0.002 over most of the dynamic range. Analysis of the noise behavior shows that the device SNR is shot-noise-limited over most of the dynamic range. Simple on-chip signal processing can be performed using an integration well to noiselessly collect signal charge from multiple pixels prior to reading out the charge. A UV-sensitive phosphor has been applied to the chip, yielding a device capable of imaging at wavelengths from the vacuum UV to the near IR.

Blouke, M. M.↗
NASA NTRS1981

Low and moderate resolution spectroscopy with an RCA charge-coupled device /CCD/

An RCA buried channel thinned 320 x 512 CCD has recently been put into operation as the detector on the blue side of a new double spectrograph used at the Cassegrain focus of the Hale 5.08 m telescope. The chip is used in a vacuum dewer at a temperature of -132 C. The readout noise over most of the chip is 46 electrons per pixel, but on one side of the device there are columns with readout noise three times as high as this. When used in a spectroscopic mode with an f/1.5 beam, the CCD shows interference pattterns with an amplitude of 5 to 20%. This pattern occurs most clearly above 5000 A. It appears to be stable and can be removed by using standard flat-field exposures. At signal levels of a few hundred electrons there are some charge transfer problems. The quantum efficiency between 4000 and 6500 is very high, and the efficiency at 3260 A is about 20% of that at 4200 A. Above 6500 A the sensitivity begins to drop steadily.

Oke, J. B.↗
NASA NTRS1975

Effects of radiation on charge-coupled devices

The effects of 1 MeV electron irradiation upon the performance of two phase, polysilicon aluminum gate CCDs are reported. Both n- and p-surface channel and n-buried channel devices are investigated using 64- and 128-stage line arrays. Characteristics measured as a function of radiation dose include: Transfer inefficiency, threshold voltage, field effect mobility, interface state density, full well signal level and dark current. Surface channel devices are found to degrade considerably at less than 10 to the 5th power rads (Si) due to the large increase in fast interface state density caused by radiation. Buried channel devices maintain efficient operation to the highest dose levels used.

Carnes, J. E.↗
NASA NTRS1976

Intensified charge coupled devices for ultra low light level imaging

Development of a sensor incorporating a CCD and photocathode for operation in the electron bombarded mode in both a magnetic and an electrostatic focussed, gated configuration is described. Initial format size is 100 x 160 pixels with eventual growth to 400 x 400 pixels. The sensor is part of a digital camera system which includes the low level video conditioning electronics, a camera controller, a high speed buffer memory, and digital recording and display electronics. The memory uses CMOS/SOS and has a capacity of 1.6 Mbits with operating rates of 48 Mbits/sec. Individual frames are co-added to provide wide dynamic range and photometric precision better than 1%. A 4-bit video quantization is used to increase the photon counting detection rate before coincidence losses become serious.

Sobieski, S.↗
NASA NTRS1978

Preliminary study of the reliability of imaging charge coupled devices

Imaging CCDs are capable of low light level response and high signal-to-noise ratios. In space applications they offer the user the ability to achieve extremely high resolution imaging with minimum circuitry in the photo sensor array. This work relates the CCD121H Fairchild device to the fundamentals of CCDs and the representative technologies. Several failure modes are described, construction is analyzed and test results are reported. In addition, the relationship of the device reliability to packaging principles is analyzed and test data presented. Finally, a test program is defined for more general reliability evaluation of CCDs.

Beall, J. R.↗