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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Array of tiny probes tests complex printed circuit boards prior to mounting of microcircuit chips and other active and passive components. Insertion and alignment of board, performance of entire computer-controlled test, and printing of results requires about a minute; performed manually same tests require as much as 30 hours.
This paper discusses the application of neural network pattern analysis algorithms to the IC fault diagnosis problem. A fault diagnostic is a decision rule combining what is known about an ideal circuit test response with information about how it is distorted by fabrication variations and measurement noise. The rule is used to detect fault existence in fabricated circuits using real test equipment. Traditional statistical techniques may be used to achieve this goal, but they can employ unrealistic a priori assumptions about measurement data. Our approach to this problem employs an adaptive pattern analysis technique based on feedforward neural networks. During training, a feedforward network automatically captures unknown sample distributions. This is important because distributions arising from the nonlinear effects of process variation can be more complex than is typically assumed. A feedforward network is also able to extract measurement features which contribute significantly to making a correct decision. Traditional feature extraction techniques employ matrix manipulations which can be particularly costly for large measurement vectors. In this paper we discuss a software system which we are developing that uses this approach. We also provide a simple example illustrating the use of the technique for fault detection in an operational amplifier.
Development and inverter circuit tests of high temperature cesium vapor thyratrons
The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical GaN-on-GaN devices, the high wafer cost hinders device commercialization. Here, in this work, we demonstrate a circuit-level avalanche in vertical GaN diodes on low-cost patterned sapphire substrate (PSS), with the avalanche voltage (1.57 kV) and avalanche current density (>2 kA/cm 2 ) both being the highest reported in GaN devices on foreign substrates. The PSS enables a lower dislocation density than conventional sapphire substrate and is employed in high-voltage GaN devices for the first time. The avalanche voltage in the circuit test reaches 98% of the parallel-plane limit, further affirming that near-ideal avalanche breakdown can be realized on GaN devices on foreign substrates. These results show the promise of the GaN-on-PSS platform for low-cost, robust power devices.
Simulator evaluates performance of firing circuits for electroexplosive devices (EED's) safely and inexpensively. Tests circuits realistically when pyrotechnic squibs not connected and eliminates risks of explosions. Used to test such devices as batteries where test conditions might otherwise degrade them.
The effect of power/temperature step stress when applied to a variety of semiconductor devices is evaluated. A total of 48 samples were submitted to be processed. Control sample units were maintained for verification of the electrical parametric testing. The test circuit was used to power all of the test devices during the power/temperature stress conditions.
Most cells survived the 3 amp (A) over-discharge at room temperature for 2 hours. The cell that failed was the LTC-114 after high rate discharge of 500 mA similar to the results of the 1 A over-discharge test. Most cells opened during 0.05 Ohm short circuit test without incident but three LTC-111 cells exploded apparently due to a lack of a thermal cutoff switch. The LTC-114 cells exposed to a hard short of 0.05 Ohms recovered but the LTC-114 cells exposed to a soft short of 1 Ohm did not. This is probably due to the activation of a resetable fuse during a hard short. Fresh cells tend to survive exposure to higher temperatures than cells previously discharged at high rate (1 Amp). LTC-111 cells tend to vent at lower temperatures than the all LTC-114 cells and the LTC-115 cells that were previously discharged at rates exceeding 1 Amp.
The work on the Process Analysis Structure was continued with the layout being completed, the 100X and 10X artwork being finalized, and the process and test sequences being prepared. Test programs were written for computer-controlled integrated-circuit testing and data reduction.
The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.
This paper describes the eight-day August 2013 test campaign designed to investigate and demonstrate viability of using classical magnetoplasmadynamics to obtain a propulsive momentum transfer via the quantum vacuum virtual plasma. This paper will not address the physics of the quantum vacuum plasma thruster, but instead will describe the test integration, test operations, and the results obtained from the test campaign. Approximately 30-50 micro-Newtons of thrust were recorded from an electric propulsion test article consisting primarily of a radio frequency (RF) resonant cavity excited at approximately 935 megahertz. Testing was performed on a low-thrust torsion pendulum that is capable of detecting force at a single-digit micronewton level, within a stainless steel vacuum chamber with the door closed but at ambient atmospheric pressure. Several different test configurations were used, including two different test articles as well as a reversal of the test article orientation. In addition, the test article was replaced by an RF load to verify that the force was not being generated by effects not associated with the test article. The two test articles were designed by Cannae LLC of Doylestown, Pennsylvania. The torsion pendulum was designed, built, and operated by Eagleworks Laboratories at the NASA Johnson Space Center of Houston, Texas. Approximately six days of test integration were required, followed by two days of test operations, during which, technical issues were discovered and resolved. Integration of the two test articles and their supporting equipment was performed in an iterative fashion between the test bench and the vacuum chamber. In other words, the test article was tested on the bench, then moved to the chamber, then moved back as needed to resolve issues. Manual frequency control was required throughout the test. Thrust was observed on both test articles, even though one of the test articles was designed with the expectation that it would not produce thrust. Specifically, one test article contained internal physical modifications that were designed to produce thrust, while the other did not (with the latter being referred to as the "null" test article). Test data gathered includes torsion pendulum displacement measurements which are used to calculate generated force, still imagery in the visible spectrum to document the physical configuration, still imagery in the infrared spectrum to characterize the thermal environment, and video imagery. Post-test data includes static and animated graphics produced during RF resonant cavity characterization using the COMSOL Multiphysics® software application. Excerpts from all of the above are included and discussed in this paper. Lessons learned from test integration and operations include identification of the need to replace manual control of the resonant cavity target frequency with an automated frequency control capability. Future test plans include the development of an automatic frequency control circuit. Test results indicate that the RF resonant cavity thruster design, which is unique as an electric propulsion device, is producing a force that is not attributable to any classical electromagnetic phenomenon and therefore is potentially demonstrating an interaction with the quantum vacuum virtual plasma. Future test plans include independent verification and validation at other test facilities.
The fabrication techniques of integrated vacuum circuits are described in detail. Data obtained from a specially designed test circuit are presented. The data show that the emission observed in reverse biased devices is due to cross-talk between the devices and can be eliminated by electrostatic shielding. The lifetime of the cathodes has been improved by proper activation techniques. None of the cathodes on life test has shown any sign of failure after more than 3500 hours. Life tests of triodes show a decline of anode current by a factor of two to three after a few days. The current recovers when the large positive anode voltage (100 V) has been removed for a few hours. It is suggested that this is due to trapped charges in the sapphire substrate. Evidence of the presence of such charges is given, and a model of the charge distribution is presented consistent with the measurements. Solution of the problem associated with the decay of triode current may require proper treatment of the sapphire surface and/or changes in the deposition technique of the thin metal films.
A simulated lightning test was conducted on the backup spacecraft for the Apollo Soyuz Test Project mission (CSM-119) to determine the susceptibility of the Apollo spacecraft to damage from the indirect effects of lightning. It is demonstrated that induced lightning effects from low-level injected currents can be scaled linearly to those which are obtained in a full threat lightning stroke. Test results indicate that: (1) many of the power and signal critical circuits would fail if subjected to full-threat lightning, (2) pyrotechnic circuits are safe for full-threat lightning, and (3) common-mode voltages exceeded the failure criteria level for all but three of the circuits tested.
Test circuit times routines even during multiprogram operation. Circuit generates pulse started by signal at beginning address of program under test and ended by signal at ending address. Pulse duration measured with logic analyzer to determine execution time.
External pin-to-pin nondestructive testing procedure measures the electrical characteristics of each element in an integrated circuit. The procedure involves choosing specific pairs of pins and applying appropriate test voltages to them.
Arrays of cryogenic microbolometers and other cryogenic detectors are being developed for infrared imaging. If the signal from each sensor is amplified, multiplexed, and digitized using superconducting electronics, then this data can be efficiently read out to ambient temperature with a minimum of noise and thermal load. HYPRES is developing an integrated system based on SQUID amplifiers, a high-resolution analog-to-digital converter (ADC) based on RSFQ (rapid single flux quantum) logic, and a clocked RSFQ multiplexer. The ADC and SQUIDs have already been demonstrated for other projects, so this paper will focus on new results of a digital multiplexer. Several test circuits have been fabricated using Nb Josephson technology and are about to be tested at T = 4.2 K, with a more complete prototype in preparation.
The NASA s Evolutionary Xenon Thruster (NEXT) project is developing an advanced ion propulsion system for future NASA missions for solar system exploration. A critical element of the propulsion system is the Power Processing Unit (PPU) which supplies regulated power to the key components of the thruster. The PPU contains six different power supplies including the beam, discharge, discharge heater, neutralizer, neutralizer heater, and accelerator supplies. The beam supply is the largest and processes up to 93+% of the power. The NEXT PPU had been operated for approximately 200+ hr and has experienced a series of three capacitor failures in the beam supply. The capacitors are in the same, nominally non-critical location-the input filter capacitor to a full wave switching inverter. The three failures occurred after about 20, 30, and 135 hr of operation. This paper provides background on the NEXT PPU and the capacitor failures. It discusses the failure investigation approach, the beam supply power switching topology and its operating modes, capacitor characteristics and circuit testing. Finally, it identifies root cause of the failures to be the unusual confluence of circuit switching frequency, the physical layout of the power circuits, and the characteristics of the capacitor.
The NASA's Evolutionary Xenon Thruster (NEXT) project is developing an advanced ion propulsion system for future NASA missions for solar system exploration. A critical element of the propulsion system is the Power Processing Unit (PPU) which supplies regulated power to the key components of the thruster. The PPU contains six different power supplies including the beam, discharge, discharge heater, neutralizer, neutralizer heater, and accelerator supplies. The beam supply is the largest and processes up to 93+% of the power. The NEXT PPU had been operated for approximately 200+ hours and has experienced a series of three capacitor failures in the beam supply. The capacitors are in the same, nominally non-critical location the input filter capacitor to a full wave switching inverter. The three failures occurred after about 20, 30, and 135 hours of operation. This paper provides background on the NEXT PPU and the capacitor failures. It discusses the failure investigation approach, the beam supply power switching topology and its operating modes, capacitor characteristics and circuit testing. Finally, it identifies root cause of the failures to be the unusual confluence of circuit switching frequency, the physical layout of the power circuits, and the characteristics of the capacitor.
Tests performed on NaS batteries are reported. The results of safety and abuse testing, shock and vibration tests, cell failure on warm-up, freeze thaw, overtemperature conditions, electrolyte fracture, overdischarge, and short circuit tests are presented along with GEO and LEO cycle tests and the status of the NaS cell flight tests.