Simultaneous Successive Twinning Captured by Atomic Electron Tomography
Not Available
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
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Results for “defect microscopy”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Understanding and Controlling Vanadium Doping and Sulfur Vacancy Behavior in Two-Dimensional Semiconductors: Toward Predictive Design
Ultrafast PL microscopy of doping and defects in transition metal dichalcogenides.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Void-interface wetting to crossing transition owing to bubble to void transformation
Understanding cavity-interface interaction is crucial in designing high-strength, radiation-tolerant nanocomposites. In this work, bubbles near the Cu–Nb interface in Nb could be absorbed by Cu voids wetting the interface due to the high system energy difference produced by the huge pressure difference between the bubbles and voids and high mobility of bubbles, and no bubble-denuded zone forms owing to fast Brownian motion of bubbles, which keeps bubbles distributed homogeneously. However, owing to the low system energy difference generated by the low internal pressure difference and low mobility, voids near the Cu–Nb interface in Nb would simply coalesce with Cu voids wetting the interface, leading to the void-interface wetting to crossing transition and the formation of void-denuded zones due to the negligible migration of internal Nb voids.
36 MATERIALS SCIENCE↗
Challenges of relaxed n -type GaP on Si and strategies to enable low threading dislocation density
We directly show that doping type strongly affects the threading dislocation density (TDD) of relaxed GaP on Si, with n-type GaP having a TDD of ~3.1 × 10 7 cm -2 , nearly 30× higher than both p-type and unintentionally doped GaP at ~1.1 × 10 6 cm -2 . Such a high TDD is undesirable since n-GaP on Si serves as the starting point for the growth of epitaxial III-V/Si multi-junction solar cells. After highlighting additional challenges for highly n-doped GaP on Si including increased surface roughness, anisotropic strain relaxation, and inhomogeneous TDD distributions from blocking of the dislocation glide, we go on to show that the TDD of n-GaP on Si rises by 10× as the doping concentration increases from ~5 × 10 16 to ~2 × 10 18 cm -3 . Next, we investigate the effects of additional dopant choices on the TDD, determining that electronic effects dominate over solute effects on the dislocation velocity at these concentrations. Finally, we demonstrate the respective roles of compressively strained superlattices, low-temperature initiation, and lowered n-type doping concentration on reducing the TDD for n-GaP on Si. By combining all three, we attain relaxed n-GaP on Si with a TDD of 1.54(±0.20) × 10 6 cm -2 , approaching parity with p-GaP on Si. Such high-quality n-GaP on Si will play an important role in boosting the efficiency of epitaxial III-V/Si multi-junction solar cells.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy
We report on the improvement of the surface morphology of c-plane GaN films grown at high growth rates (~1 µm/h) using ammonia molecular beam epitaxy through a series of growth optimizations as well as the introduction of indium as a surfactant. The indium surfactant was expected to help with the adatom mobility and, thus, provide smoother growth surfaces. Through a combination of varying V/III ratios, In flux, and growth temperatures, an optimal condition for surface morphology, characterized by atomic force microscopy, was achieved. At higher Ga fluxes for fast growth rates (~1 µm/h and beam equivalent pressures of ~5 × 10 –7 Torr), higher ammonia flows were necessary to preserve the surface morphology. In addition, indium was an effective surfactant—reducing the roughness and improving the overall surface morphology. However, excessive indium causes the surface morphology to degrade, potentially due to the enhancement of the Ga desorption from the surface as a result of the reaction of indium with ammonia for high indium fluxes. The indium surfactant also resulted in a reduction of background Si impurity concentrations in the film. These effects allow for the growth of thick drift layers with low background dopant concentrations for vertical GaN power devices.
36 MATERIALS SCIENCE↗
Photoinduced patterning of oxygen vacancies to promote the ferroelectric phase of Hf 0.5 Zr 0.5 O 2
Photoinduced reductions in the oxygen vacancy concentration were leveraged to increase the ferroelectric phase fraction of Hf 0.5 Zr 0.5 O 2 thinfilms. Modest ( ~ 2 — 77 pJ=cm 2 ) laser doses of visible light (488 nm, 2.54 eV) spatially patterned the concentration of oxygen vacancies as monitored by photoluminescence imaging. Local, tip-based, near-field, nanoFTIR measurements showed that the photoinduced oxygen vacancy concentration reduction promoted formation of the ferroelectric phase (space group Pca2 1 ), resulting in an increase in the piezoelectric response measured by piezoresponse force microscopy. Photoinduced vacancy tailoring provides, therefore, a spatially prescriptive, postsynthesis, and low-entry method to modify phase in HfO 2 -based materials.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Conundrum of strongly coupled supercurrent flow in both under- and overdoped Bi-2212 round wires
Not Available
36 MATERIALS SCIENCE↗
Anomalous interfacial dynamics of single proton charges in binary aqueous solutions
Our understanding of the dynamics of charge transfer between solid surfaces and liquid electrolytes has been hampered by the difficulties in obtaining interface, charge, and solvent-specific information at both high spatial and temporal resolution. Here, we measure at the single charge scale the dynamics of protons at the interface between an hBN crystal and binary mixtures of water and organic amphiphilic solvents (alcohols and acetone), evidencing a marked influence of solvation on interfacial dynamics. Applying single-molecule localization microscopy to emissive crystal defects, we observe correlated activation between adjacent ionizable surface defects, mediated by the transport of single excess protons along the solid/liquid interface. Solvent content has a nontrivial effect on interfacial dynamics, leading at intermediate water fraction to an increased surface diffusivity, as well as an increased affinity of the proton charges to the solid surface. Our measurements evidence the notable role of solvation on interfacial proton charge transport.
36 MATERIALS SCIENCE↗
High-Entropy Alloy R&D for Accelerator Beam Window Applications
High-Entropy Alloys are a class of novel material that can offer improved resistance to beam-induced radiation damage and thermal shock. Development of these new alloys to serve as beam windows in multi-megawatt accelerator target applications is ongoing at Fermilab. Currently we are investigating AlCoCrMnTiV alloy systems of 4-6 components for service as beam windows; these compositions are predicted by CALPHAD simulation to have a low density and single-phase BCC crystal structure. The microstructures of these systems are being studied by electron microscopy techniques such as energy dispersive X-ray spectroscopy (EDS) to determine elemental homogeneity and composition, electron backscatter diffraction (EBSD) to quantify grain structure and orientation, and transmission electron microscopy (TEM) to observe defect structures and precipitate formation; nanoindentation is used to probe microstructural mechanical properties. Initial bulk property characterization utilizes differential scanning calorimetry to quantify specific heat capacity (cp), dilatometry to determine the coefficient of thermal expansion (CTE), and time-domain thermoreflectance (TDTR) to measure thermal conductivity (K). A miniature tensile testing apparatus is also being developed to test tensile properties. Post-irradiation examination is currently ongoing for several of these compositions that have been irradiated by low-energy ions to damage levels and at a temperature relevant to beam window applications at future next-generation accelerator facilities. This talk will briefly describe the alloy design and synthesis before going into more depth covering microstructural pre-characterization, and post-irradiation examination results from low-energy ion irradiated specimens. This will be followed by the plans for alloy down selection and future prototypic proton irradiations.
43 PARTICLE ACCELERATORS↗
Fluorescence microscopy for the characterization of structural integrity
The absorption characteristics of light and the optical technique of fluorescence microscopy for enhancing metallographic interpretation are presented. Characterization of thermally sprayed coatings by optical microscopy suffers because of the tendency for misidentification of the microstructure produced by metallographic preparation. Gray scale, in bright field microscopy, is frequently the only means of differentiating the actual structural details of porosity, cracking, and debonding of coatings. Fluorescence microscopy is a technique that helps to distinguish the artifacts of metallographic preparation (pullout, cracking, debonding) from the microstructure of the specimen by color contrasting structural differences. Alternative instrumentation and the use of other dye systems are also discussed. The combination of epoxy vacuum infiltration with fluorescence microscopy to verify microstructural defects is an effective means to characterize advanced materials and to assess structural integrity.
Street, Kenneth W.↗
Characterization facility for magneto-optic media and systems
Objectives of this research are: (1) to measure the hysteresis loop, Kerr rotation angle, anisotropy energy profile, Hall voltage, and magnetoresistance of thin-film magneto-optic media using our loop-tracer; (2) measure the wavelength-dependence of the Kerr rotation angle, Theta(sub k), and ellipticity, epsilon(sub k), for thin-film media using our magneto-optic Kerr spectrometer (MOKS); (3) measure the dielectric tensor of thin-film and multilayer samples using our variable-angle magneto-optic ellipsometer (VAMOE); (4) measure the hysteresis loop, coercivity, remanent magnetization, saturation magnetization, and anisotropy energy constant for thin film magnetic media using vibrating sample magnetometry; (5) observe small magnetic domains and investigate their interaction with defects using magnetic force microscopy; (6) perform static read/write/erase experiments on thin-film magneto-optic media using our static test station; (7) integrate the existing models of magnetization, magneto-optic effects, coercivity, and anisotropy in an interactive and user-friendly environment, and analyze the characterization data obtained in the various experiments, using this modeling package; (8) measure focusing- and tracking-error signals on a static testbed, determine the 'feedthrough' for various focusing schemes, investigate the effects of polarization and birefringence, and compare the results with diffraction-based calculations; and (9) measure the birefringence of optical disk substrates using two variable angle ellipsometers.
Mansuripur, M.↗
Atomic Oxygen Durability of Aluminized Polymers
The atomic oxygen durability of aluminized polymers will be investigated. Such aluminized polymers are commonly used in space and specifically on the International Space Station. Recent data from in-space results indicates that vapor deposited aluminum coatings are highly defected with many small pin windows. However, electron microscopy to validate the size and aerial density of such defects remains to be demonstrated. The research project is planned to compare electron microscopy analysis of pristine and atomic oxygen exposed aluminized polyimide Kapton with the results of ground laboratory atomic oxygen erosion data, in-space results and computational Monte Carlo modeling to develop a self consistent understanding of the atomic oxygen degradation processes and effects.
Yang, Judith C.↗
Analysis of Defects in Metal Additive Manufacturing with Augmented Data Generation
Laser powder bed fusion (LPBF) is a method of additive manufacturing (AM) that selectively melts and fuses together microscopic metallic powder. LPBF offers the benefit of producing custom structures out of high strength metals that can be difficult to fabricate with conventional methods. The challenge of LPBF is that 3D printed structures often have internal pores due to process flaws. Pulsed thermal tomography (PTT) is a method for reconstructing the depth profile of materials, allowing the visualization internal voids in solids. In prior work, we developed a convolutional neural network (CNN) which, having been trained on simulated 2D PTT images of subsurface elliptical defects, was able to classify the semi-major radii, semi-minor radii, and angular orientation of the best-fit ellipses in previously unseen PTT images. The unseen PTT images contained subsurface irregular defect shapes imported from scanning electron microscopy (SEM) images of metallic LPBF-printed specimens. Training the CNN on irregular defect shapes instead of on elliptical shapes would make the resulting classifications more descriptive of actual defect shapes. However, this requires a much higher volume of SEM images of material defects, which are difficult to obtain because of random occurrence of defects in LPBF. To address this challenge, we developed a generative adversarial network (GAN) to augment the existing dataset of SEM defect images. The GAN model is demonstrated to create novel yet realistic defect shapes that can be used as input for simulated PTT images to train CNN.
36 MATERIALS SCIENCE↗
Mechanical and Thermophysical Properties of 3D-Printed SiC before and after Neutron Irradiation – FY21
This report presents the mechanical and thermophysical properties of 3D-printed SiC before and after neutron irradiation that have been evaluated to assess the fuel matrix material for the Transformational Challenge Reactor (TCR). The TCR fuel form consists of an additively-manufactured silicon carbide (SiC) matrix and uranium nitride tristructural isotropic (UN TRISO) fuel particles, which is manufactured through a newly developed processing route combining binderjet 3D printing, TRISO fuel particle loading, and chemical vapor infiltration (CVI). Because the fuel matrix is a primary component of the TCR core and its response to mechanical and thermal loads during operation is one of the most influential factors on the integrity of TCR core, testing and evaluation have focused on producing mechanical and thermophysical properties data for the binderjet/CVI SiC. Baseline mechanical and thermophysical properties were measured from the disk specimens printed for different and sizes orientations, which included equibiaxial flexural failure strength, elastic constants, thermal diffusivity and conductivity, density, and the coefficient of thermal expansion. Flexural failure strength datasets showed similar Weibull distributions regardless of sample variants including different orientations. The mean failure strengths of the 3D-printed SiC variants were in the range of 280–310 MPa, which are slightly lower than that of the chemical vapor deposition (CVD) SiC. Thermophysical test results showed that specific heat and thermal expansion are not sensitive to the build direction of SiC samples, while thermal conductivity is highly dependent on the build direction and can be correlated to the anisotropic character of the 3D-printed SiC. Neutron irradiation tests were carried out on the 3D-printed 6-mm diameter SiC disk specimens. Irradiation was carried to 2.3 dpa over a temperature range of 360–880°C. No significant degradation in strength was observed in SiC after irradiations in various conditions and with different orientations. Anisotropy that had been observed in the thermal conductivity of 3D-printed SiC prior to irradiation vanished after irradiation as the irradiation defect thermal resistivity accumulated in the material. Electron microscopy of the microstructure after neutron irradiation showed distinct defect morphologies in the heterogenous material, but no evidence for irradiation-induced cracking or degradation in the microstructure was observed.
11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
Quantifying the Influence of Defects on Selectivity of Electrodes Encapsulated by Nanoscopic Silicon Oxide Overlayers
Encapsulation of electrocatalysts and photocatalysts with semipermeable nanoscopic oxide overlayers that exhibit selective transport properties is an attractive approach to achieve high redox selectivity. However, defects within the overlayers-such as pinholes, cracks, or particle inclusions-may facilitate local high rates of parasitic reactions by creating pathways for facile transport of undesired reactants to exposed active sites. Scanning electrochemical microscopy (SECM) is an attractive method to determine the influence of defects on macroscopic performance metrics thanks to its ability to measure the relative rates of competing electrochemical reactions with high spatial resolution over the electrode. Here, we report the use of SECM to determine the influence of overlayer defects on the selectivity of silicon oxide (SiOx) encapsulated platinum thin-film electrocatalysts operated under conditions where two competing reactions-the hydrogen evolution and Fe(III) reduction reactions-can occur. After an SECM methodology is described to determine spatially resolved selectivity, representative selectivity maps are correlated with the location of defects that are characterized by optical, electron, and atomic force microscopies. This analysis reveals that certain types of defects in the oxide overlayer are responsible for ∼60-90% of the partial current density toward the undesired Fe(III) reduction reaction. By correcting for defect contributions to Fe(III) reduction rates, true Fe(III) permeability values for the SiOxoverlayers were determined to be over an order of magnitude lower than permeabilities determined from analyses that ignore the presence of defects. Lastly, different types of defects were studied revealing that defect morphology can have varying influence on both redox selectivity and calculated permeability. This work highlights the need for spatially resolved measurements to evaluate the performance of oxide-encapsulated catalysts and understand their performance limits.
25 ENERGY STORAGE↗
Characterising Ion-Irradiated FeCr: Hardness, Thermal Diffusivity and Lattice Strain
Ion-irradiated FeCr alloys are useful for understanding and predicting neutron damage in the structural steels of future nuclear reactors. Previous studies have largely focused on the structure of irradiation induced defects, probed by transmission electron microscopy (TEM), as well as changes in mechanical properties. Across these studies, a wide range of irradiation conditions has been employed on samples with different processing histories, which complicates the analysis of the relationship between defect structures and material properties. Furthermore, key properties, such as irradiation-induced changes in thermal transport and lattice strain, are little explored. Here we present a systematic study of Fe3Cr, Fe5Cr and Fe10Cr binary alloys implanted with 20 MeV Fe3+ ions to nominal doses of 0.01 dpa and 0.1 dpa at room temperature. Nanoindentation, transient grating spectroscopy (TGS) and X-ray micro-beam Laue diffraction were used to study the changes in hardness, thermal diffusivity and strain in the material as a function of damage and Cr content. Our results suggest that Cr leads to an increased retention of irradiation-induced defects, causing substantial changes in hardness and lattice strain. However, thermal diffusivity varies little with increasing damage and instead degrades significantly with increasing Cr content in the material. We find significant lattice strains even in samples exposed to a nominal displacement damage of 0.01 dpa. The defect density predicted from the lattice strain measurements is significantly higher than that observed in previous TEM studies, suggesting that TEM may not fully capture the irradiation-induced defect population. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
FeCr alloys↗
Defect-induced displacement of topological surface state in quantum magnet MnBi2Te4
The topological magnet MnBi2Te4 (MBT), with gapped topological surface state, is an attractive platform for realizing quantum anomalous Hall and axion insulator states. However, the experimentally observed surface state gaps fail to meet theoretical predictions, although the exact mechanism behind the gap suppression has been debated. Recent theoretical studies suggest that intrinsic antisite defects push the topological surface state away from the MBT surface, closing its gap and making it less accessible to scanning probe experiments. Here, we report on the local effect of defects on the MBT surface states and demonstrate that high defect concentrations lead to a displacement of the surface states well into the MBT crystal, validating the theorized mechanism. The local and global influence of antisite defects on the topological surface states are studied with samples of varying defect densities by combining scanning tunneling microscopy, angle-resolved photoemission spectroscopy, and density functional theory. Our findings identify a combination of increased defect density and reduced defect spacing as the primary factors underlying the displacement of the surface states and suppression of surface gap, guiding further development of topological quantum materials.
Lupke, Felix [Carnegie Mellon University (CMU)]↗
Defect structure of web silicon ribbon
The results of a preliminary study of two dendritic web samples are presented. The structure and electrical activity of the defects in the silicon webs were studied. Optical microscopy of chemically etched specimens was used to determine dislocation densities. Samples were mechanically polished, then Secco etched for approximately 5 minutes. High voltage transmission electron microscopy was used to characterize the crystallographic nature of the defects.
Cunningham, B.↗