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Results for “device simulation”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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443 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Method for implant and anneal for high voltage field effect transistors

In an example, the present invention provides a method of forming a semiconductor device on a gallium and nitrogen containing material. The method includes providing a substrate member comprising a surface region, the substrate member comprising a gallium and nitrogen bearing material. The method includes causing an implanted species to electrically activate the implant profile while removing one or more crystalline damage from the epitaxial material to change the amorphous state to a single crystalline state, and thereby creating a substantially electrically activated crystalline material.

Shealy, James R.↗
DOE OSTI2024

Real-space visualization of a defect-mediated charge density wave transition

Here, we study the coupled charge density wave (CDW) and insulator-to-metal transitions in the 2D quantum material 1T-TaS 2 . By applying in situ cryogenic 4D scanning transmission electron microscopy with in situ electrical resistance measurements, we directly visualize the CDW transition and establish that the transition is mediated by basal dislocations (stacking solitons). We find that dislocations can both nucleate and pin the transition and locally alter the transition temperature T c by nearly ~75 K. This finding was enabled by the application of unsupervised machine learning to cluster five-dimensional, terabyte scale datasets, which demonstrate a one-to-one correlation between resistance—a global property—and local CDW domain-dislocation dynamics, thereby linking the material microstructure to device properties. This work represents a major step toward defect-engineering of quantum materials, which will become increasingly important as we aim to utilize such materials in real devices.

4D-STEM↗
DOE OSTI2024

Adaptive Scalpel Scanning Probe Microscopy for Enhanced Volumetric Sensing in Tomographic Analysis

Controlling nanoscale tip‐induced material removal is crucial for achieving atomic‐level precision in tomographic sensing with atomic force microscopy (AFM). While advances have enabled volumetric probing of conductive features with nanometer accuracy in solid‐state devices, materials, and photovoltaics, limitations in spatial resolution and volumetric sensitivity persist. This work identifies and addresses in‐plane and vertical tip‐sample junction leakage as sources of parasitic contrast in tomographic AFM, hindering real‐space 3D reconstructions. Novel strategies are proposed to overcome these limitations. First, the contrast mechanisms analyzing nanosized conductive features are explored when confining current collection purely to in‐plane transport, thus allowing reconstruction with a reduction in the overestimation of the lateral dimensions. Furthermore, an adaptive tip‐sample biasing scheme is demonstrated for the mitigation of a class of artefacts induced by the high electric field inside the thin oxide when volumetrically reduced. This significantly enhances vertical sensitivity by approaching the intrinsic limits set by quantum tunneling processes, allowing detailed depth analysis in thin dielectrics. The effectiveness of these methods is showcased in tomographic reconstructions of conductive filaments in valence change memory, highlighting the potential for application in nanoelectronics devices and bulk materials and unlocking new limits for tomographic AFM.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Tunable Metasurface External-Cavity Quantum Cascade Lasers up to 5.74 THz

Vertical-external-cavity surface-emitting lasers based on amplifying quantum-cascade metasurfaces are demonstrated in the 5–6 THz range for the first time. Enhanced parasitic coupling to lossy surface modes requires updated design guidelines, while elevated losses and lower available material gain limit the scaling of the metasurface period from previous designs. A series of metasurface devices with varying periods employing both uniform and focusing metasurfaces is fabricated and characterized. Reducing the metasurface period below 70% of the free-space wavelength enables devices with superior performance, achieving pulsed operation up to 5.74 THz with peak output powers of 1.3 mW, maximum operating temperatures up to 83 K, and continuous-wave operation up to 54 K with 23 μW of output power. In the best case, single-mode tuning from 5.23–5.73 THz, which corresponds to a 9.1% fractional tuning, is realized with near-Gaussian far-field profiles maintained across the entire range. Finally, these results establish quantum cascade vertical-external-cavity surface-emitting lasers as promising candidates for high-frequency local oscillator applications in heterodyne spectroscopy.

gallium arsenide↗
DOE OSTI2026

Lagrange-Remap strategy for multi-material fluid-solid simulations using compressive limiters

In the present work, the Lagrange-Remap strategy proposed in [1] is extended to multi-material fluid-solid simulations. Both hypo-elastic and hyper-elastic material models are considered to describe the mechanical behavior of the solids. In practice, the deviatoric stress tensor (for hypo-elastic materials) and the left Cauchy-Green tensor (for isotropic hyper-elastic materials) are remapped, while the use of compressive limiters effectively reduces numerical diffusion during the remapping step. The simplicity of this diffuse interface approach is emphasized in the context of multi-material fluid-solid simulations. A series of Lagrange-Remap test cases, involving both solids and fluids, are conducted and compared with reference Lagrangian simulations, demonstrating the robustness and accuracy of the overall numerical strategy.

Compressive limiters↗
DOE OSTI2024

Alumina–Titania Nanolaminate Condensers for Hot Programmable Catalysis

Nanolaminates composed of thin alternating layers of Al2O 3 and TiO 2 (ATO) were engineered by using atomic layer deposition as the dielectric material for a Pt-on-carbon catalytic condenser. Investigation assessed synthesis parameters including the deposition temperature, Al 2 O 3 and TiO 2 layer thicknesses, total number of layers, and a capping Al 2 O 3 layer on the maximum charge accumulation in the Pt catalyst. The highest capacitance ATO configuration demonstrated a specific capacitance of ∼1200 nF/cm 2 with working voltages of ±5 V, enabling the storage of 4 × 10 13 electrons or holes per cm 2 at room temperature. The ATO devices exhibited enhanced capacitance at elevated temperatures of up to 400 °C, suggesting the suitability of these materials for high-temperature applications. Adsorption of carbon monoxide on the Pt/C-ATO device characterized by grazing incidence infrared spectroscopy showed changes in the surface binding energy of 13.1 ± 0.8 kJ/mol for an applied external voltage bias of ±1 V.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Mechanical, Electrochemical & Thermal Modeling of Electric Vehicle Batteries for Crash Simulation (CRADA CRD-19-00811 Final Report)

Under the proposed effort in partnership with Hyundai Motor Company (HMC), the National Laboratory of the Rockies (NLR) will cooperate with HMC to develop mathematical models for battery cells and modules for simulating abuse response in batteries subject to the type of mechanical crushing that can occur in a full motor vehicle crash.

33 ADVANCED PROPULSION SYSTEMS↗