Dielectrics - Digest of literature, volume 28, 1964
Dielectric constants, dipole moments, relaxation times, conduction phenomena, insulating films, breakdown, materials, and applications of dielectrics - annotated bibliography
INSULATOR↗
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Fundamental Insight on Developing Low Dielectric Constant Polyimides
Thermally stable, durable, insulative polyimides are in great demand for the fabrication of microelectronic devices. In this investigation dielectric and optical properties have been studied for several series of aromatic polyimides. The effect of polarizability, fluorine content, and free volume on dielectric constant was examined. In general, minimizing polarizability, maximizing free volume and fluorination all lowered dielectric constants in the polyimides studied.
Simpson, J. O.↗
Tests and Guidelines for Deep Dielectric Charging in Spacecraft
Spacecraft electric insulators are sources of spacecraft anomalies especially as the spacecraft experiences the radiation belts around Earth.
deep↗
Fluorinated Poly(Phenylene Ether Ketones)
Fluorinated poly(phenylene ether ketones) are colorless, transparent, low-dielectric-constant, highly thermally stable polymers. Particularly suitable for use as film and coating materials in electronic and thermal-control applications such as; passivant insulating coats and interlevel dielectrics in microelectronic circuits, or as protective transparent coats on solar cells or mirrors. Solubility and transparency of 12F-PEK along with its lower dielectric constant and other properties make it more useful as dielectric film and coating material in many applications.
St. Clair, Anne K.↗
Dielectric breakdown in a dilute plasma.
Description of tests performed to determine the effects of high voltages on dielectrics that are to insulate solar cell arrays operating at voltages up to 16 kV from the electrically active plasma of the space environment at 500 km altitude. The tests were performed on dielectrics considered for this application at positive bias voltages as high as 20 kV dc relative to ground in an argon plasma with electron number densities of approximately one million per cu cm. Teflon specimens displayed higher breakdown voltages than all other dielectrics tested.
Mckinzie, D. J., Jr.↗
Engineered Hexagonal Boron Nitride:Titanium Dioxide Composites for High Voltage Insulation
Hexagonal boron nitride (hBN) and Titanium dioxide are both ceramic materials with widespread use in commercial and consumer applications in everything from cosmetics and paint to deep space satellite components. As a dielectric material, hBN is electrically insulating, thermally conductive, and stable to most temperatures and environments. Titanium dioxide is also a good electrical insulator with a wide bandgap and large dielectric constant, as well as high temperature tolerance and chemical stability. This presentation covers our recent efforts to combine the best properties of hBN and titanium dioxide to produce an intercalated hBN:titanium dioxide composite which was then further processed and incorporated into polymer composites, as well as a standalone ceramic material for testing as a novel insulation material.
boron nitride↗
Insulation Resistance Degradation in Ni-BaTiO3 Multilayer Ceramic Capacitors
Insulation resistance (IR) degradation in NiBaTiO3 multilayer ceramic capacitors has been characterized by the measurement of both time to failure (TTF) and direct current leakage current as a function of stress time under highly accelerated life test conditions. The measured leakage current time dependence data fit well to an exponential form, and a characteristic growth time tau (sub SD) can be determined. A greater value of tau (sub SD) represents a slower IR degradation process. Oxygen vacancy migration and localization at the grain boundary region results in the reduction of the Schottky barrier height and has been found to be the main reason for IR degradation in NiBaTiO3 capacitors. The reduction of barrier height as a function oftime follows an exponential relation of phi (t ) = phi (0) e (exp -2Kt), where 13 the degradation rate constant K Koe (Ek/kT) is inversely proportional to the mean TTF (MTTF) and can be determined using an Arrhenius plot. For oxygen vacancy electromigration, a lower barrier height phi (0) will favor a slow IR degradation process, but a lower phi (0) will also promote electronic carrier conduction across the barrier and decrease the IR. As a result, a moderate barrier height phi (0) (and therefore a moderate IR value) with a longer MTTF (smaller degradation rate constant K) will result in a minimized IR degradation process and the most improved reliability in NiBaTiO3 multilayer ceramic capacitors.
reliability↗
Comparing CRRES Internal Discharge Monitor results with ground tests and published guidelines
Explore the source record for details and available documents.
spacecraft charging IDM CRRES ESD internal chargin↗
A 96% Alumina based Packaging System for 500°C Test of SiC Integrated Circuits
With the development of silicon carbide (SiC) sensors and electronic devices for operation at 500°C, compatible packaging technologies are needed for long term high temperature test and deployment of these sensors and electronic devices. 96% Al2O3ceramic is an excellent electrically insulating material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. This paper presents a packaging system for low power integrated circuits including a prototype 8-I/O chip-level package and printed circuit board (PCB) based on 96% Al2O3ceramic substrates and Au thick-film metallization for 500°C applications. The details related to designs of packages and PCBs, packaging materials, and specific packaging step recipes including wire -bonding and die-attach, are presented. Some test results of this prototype packaging approach applied to SiC integrated circuits at 500°C are reviewed.
High Temperature, Packaging, Alumina, Thick Film↗
A 96% Alumina based Packaging System for 500°C Test of SiC Integrated Circuits
With the development of silicon carbide (SiC) sensors and electronic devices for operation at 500°C, compatible packaging technologies are needed for long term high temperature test and deployment of these sensors and electronic devices. 96% Al2O3 ceramic is an excellent electrically insulating material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. This paper presents a packaging system for low power integrated circuits including a prototype 8-I/O chip-level package and printed circuit board (PCB) based on 96% Al2O3 ceramic substrates and Au thick-film metallization for 500°C applications. The details related to designs of packages and PCBs, packaging materials, and specific packaging step recipes including wire - bonding and die-attach, are presented. Some test results of this prototype packaging approach applied to SiC integrated circuits at 500oC are reviewed.
high temperature↗
Mineral equilibria and the high radar reflectivity of Venus mountaintops
The relationship between altitude and microwave emissivity in 10 highland regions of Venus is investigated on the basis of the Magellan data set. Highlands on Venus are found to display high radar reflectivity. The required change in surface electrical properties occurs abruptly at a 'critical altitude,' whose value varies from one highland area to another. Critical altitudes range from 4.75 km to 2.49 km. Differences in reflectivity are caused by differences in the surface mineral assemblage, which determines the dielectric constant of surface material. The mineral responsible for high radar reflectivity on mountaintops is pyrite, which occurs in weathered mineral assemblages at high altitudes. Conductive pyrite occurs dispersed in insulating materials, forming a loaded dielectric material.
Klose, K. B.↗
Collaboration of the NASA Glenn Research Center and Rolls-Royce Developed Thin Film Multilayered Dielectrics for Harsh Environments
The use of thin films to electrically insulate thin film sensors on engine components minimizes the intrusiveness of the sensors and allows a more accurate measurement of the environment. A variety of insulating films were investigated for preventing electrical shorting caused by insulator failure between the sensor and the component. By alternating layers of sputtered high-temperature ceramics, a sequence of insulating layers was devised that (1) prevents pinholes from forming completely through the insulator and (2) maintains high electrical resistivity at high temperatures. The total thickness is only a fraction of that needed for conventional insulating techniques. The Sensors and Electronics Technology Branch of the NASA Glenn Research Center has an in-house effort to develop thin film sensors for surface measurement in propulsion system research. Thin film sensors do not require special machining of the components on which they are mounted, and they are considerably thinner (less than 10 mm thick) than wire or foil sensors. The thin film sensors are thus much less disturbing to the operating environment and have a minimal impact on the physical characteristics of the supporting component. To further this research, NASA Glenn and Rolls-Royce (Derby, UK), with assistance from the Ohio Aerospace Institute (OAI) and the Akima Corporation, pursued a joint investigation using multilayered thin film dielectrics as a reliable insulator in harsh environments. The use of a multilayered scheme is thought to be promising for the fabrication of electrically insulating thin films. A major cause of conduction in thin film dielectrics is the presence of defects, such as pinholes, that propagate through the film to the underlying substrate surface. By alternating the insulating material, each new growth pattern would deviate from the previous one, eliminating direct pathways for conduction to the substrate. The film depositions and testing were conducted in the Instrument Research Laboratory at Glenn. The multilayered insulator test samples were made from alumina and stainless steel shims that were first covered with a sputtered underlayer of either yttria-stabilized zirconia or chromium carbide, and then overcoated with a sputtered top layer of alumina. An example of a test sample is shown in the following photograph. Each multilayered insulator sample was 5 mm thick, at least an order of magnitude thinner than conventional insulators. The insulating properties of the samples were tested in a high-temperature air oven to determine their suitability. The multilayer insulators tested showed a stabilized film at temperatures in excess of 800 C (1472 F). The underlying materials in these multilayers allow thermal expansion stresses produced during the heating to be graded. The chromium carbide-alumina multilayer had the best adhesion at high temperatures, presumably from the induced chemical bonding between the substrate and the chromium carbide underlayer. However, the zirconia-alumina multilayer proved to have slightly better insulating properties when adhering. The application of the zirconia-alumina insulator has been demonstrated on a nickel-alloy fan blade, as shown. The insulators using thin film sensors still need to be tested in a relevant high-temperature combustion environment.
Wrbanek, John D.↗
Absorption Voltages and Insulation Resistance in Ceramic Capacitors with Cracks
Time dependence of absorption voltages (Vabs) in different types of low-voltage X5R and X7R ceramic capacitors was monitored for a maximum duration of hundred hours after polarization. To evaluate the effect of mechanical defects on Vabs, cracks in the dielectric were introduced either mechanically or by thermal shock. The maximum absorption voltage, time to roll-off, and the rate of voltage decrease are shown to depend on the crack-related leakage currents and insulation resistance in the parts. A simple model that is based on the Dow equivalent circuit for capacitors with absorption has been developed to assess the insulation resistance of capacitors. Standard measurements of the insulation resistance, contrary to the measurements based on Vabs, are not sensitive to the presence of mechanical defects and fail to reveal capacitors with cracks. Index Terms: Ceramic capacitor, insulation resistance, dielectric absorption, cracking.
cracking↗
The existence of hyperbolic excitons
Hyperbolic excitons as unstable and not accountable for resonance structure in optical spectra of insulators
DIELECTRICS↗
A Reliability Model for Ni-BaTiO3-Based (BME) Ceramic Capacitors
The evaluation of multilayer ceramic capacitors (MLCCs) with base-metal electrodes (BMEs) for potential NASA space project applications requires an in-depth understanding of their reliability. The reliability of an MLCC is defined as the ability of the dielectric material to retain its insulating properties under stated environmental and operational conditions for a specified period of time t. In this presentation, a general mathematic expression of a reliability model for a BME MLCC is developed and discussed. The reliability model consists of three parts: (1) a statistical distribution that describes the individual variation of properties in a test group of samples (Weibull, log normal, normal, etc.), (2) an acceleration function that describes how a capacitors reliability responds to external stresses such as applied voltage and temperature (All units in the test group should follow the same acceleration function if they share the same failure mode, independent of individual units), and (3) the effect and contribution of the structural and constructional characteristics of a multilayer capacitor device, such as the number of dielectric layers N, dielectric thickness d, average grain size r, and capacitor chip size S. In general, a two-parameter Weibull statistical distribution model is used in the description of a BME capacitors reliability as a function of time. The acceleration function that relates a capacitors reliability to external stresses is dependent on the failure mode. Two failure modes have been identified in BME MLCCs: catastrophic and slow degradation. A catastrophic failure is characterized by a time-accelerating increase in leakage current that is mainly due to existing processing defects (voids, cracks, delamination, etc.), or the extrinsic defects. A slow degradation failure is characterized by a near-linear increase in leakage current against the stress time; this is caused by the electromigration of oxygen vacancies (intrinsic defects). The two identified failure modes follow different acceleration functions. Catastrophic failures follow the traditional power-law relationship to the applied voltage. Slow degradation failures fit well to an exponential law relationship to the applied electrical field. Finally, the impact of capacitor structure on the reliability of BME capacitors is discussed with respect to the number of dielectric layers in an MLCC unit, the number of BaTiO3 grains per dielectric layer, and the chip size of the capacitor device.
reliability↗
A study of electric transmission lines for use on the lunar surface
The sources for electrical power on a lunar base are said to include solar/chemical, nuclear (static conversion), and nuclear (dynamic conversion). The transmission of power via transmission lines is more practical than power beaming or superconducting because of its low cost and reliable, proven technology. Transmission lines must have minimum mass, maximum efficiency, and the ability to operate reliably in the lunar environment. The transmission line design includes conductor material, insulator material, conductor geometry, conductor configuration, line location, waveform, phase selection, and frequency. This presentation oulines the design. Liquid and gaseous dielectrics are undesirable for long term use in the lunar vacuum due to a high probability of loss. Thus, insulation for high voltage transmission line will most likely be solid dielectric or vacuum insulation.
Gaustad, Krista L.↗
High Voltage Insulation for Electrified Aircraft
The paper will present an overview of the current NASA project on development of electric propulsion technologies and in particular, a newly discovered insulation technology, namely micromultilayer multifunctional electrical insulation (MMEI). Results of extensive dielectric performance evaluations and its potential capabilities including efforts of demonstrating scale-up and commercial applicability of MMEI will be summarized.
Woodworth, Andrew A.↗
Distorted Perovskites for High Voltage Dielectric Capacitors
There are several mechanisms which have been proposed for the existence of colossal dielectric constant in the class of perovskite calcium copper titanate (CaCu3Ti4O12 or CCTO) materials. Researches indicate that existence of twinning parallel to (100) (001) and (010) planes causes planar defects and causes changes in local electronic structure. This change can cause insulating barriers locally which contribute to the large dielectric values irrespective of processing. The combination of insulating barriers, defects and displacements caused by twinning have been attributed to the generation of large dielectric constant in CCTO. To examine some of these arguments some researchers replaced Ca with other elements and evaluated this concept. In this study we present the synthesis and characterization of Ga2/3Cu3Ti4O12-xNx (GCTON) material. This provides both distortion due to atomic size difference and defects due to insertion of nitrogen. The morphology of the compound was determined to show that processing has tremendous effect on the dielectric values. The resistivity of GCTON was several order higher than CCTO and dielectric constant was higher than 10,000.
Gill, Puneet↗