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Atmospheric Instrument Systems and Technology in the Goddard Earth Sciences Division

Studies of the Earth’s atmosphere require a comprehensive set of observations that rely on instruments flown on spacecraft, aircraft, and balloons as well as those deployed on the surface. Within NASA’s Goddard Space Flight Center (GSFC) Earth Sciences Division-Atmospheres, laboratories and offices maintain an active program of instrument system development and observational studies that provide: 1) information leading to a basic understanding of atmospheric processes and their relationships with the Earth’s climate system, 2) prototypes for future flight instruments, 3) instruments to serve as calibration references for satellite missions, and 4) instruments for future field validation campaigns that support ongoing space missions. Our scientists participate in all aspects of instrument activity, including component and system design, calibration techniques, retrieval algorithm development, and data processing systems. The Atmospheres Program has well-equipped labs and test equipment to support the development and testing of instrument systems, such as a radiometric calibration and development facility to support the calibration of ultraviolet and visible (UV/VIS), space-borne solar backscatter instruments. This document summarizes the features and characteristics of 46 instrument systems that currently exist or are under development. The report is organized according to active, passive, or in situ remote sensing across the electromagnetic spectrum. Most of the systems are considered operational in that they have demonstrated performance in the field and are capable of being deployed on relatively short notice. Other systems are under study or of low technical readiness level (TRL). The systems described herein are designed mainly for surface or airborne platforms. However, two Cubesat systems also have been developed through collaborative efforts. The Solar Disk Sextant (SDS) is the single balloon-borne instrument. The lidar systems described herein are designed to retrieve clouds, aerosols, methane, water vapor pressure, temperature, and winds. Most of the lasers operate at some wavelength combination of 355, 532, and 1064 nm. The various systems provide high sensitivity measurements based on returns from backscatter or Raman scattering including intensity and polarization. Measurements of the frequency (Doppler) shift of light scattered from various atmospheric constitutes can also be made. Microwave sensors consist of both active (radar) and passive (radiometer) systems. These systems are important for studying processes involving water in various forms. The dielectric properties of water affect microwave brightness temperatures, which are used to retrieve atmospheric parameters such as rainfall rate and other key elements of the hydrological cycle. Atmosphere radar systems operate in the range from 9.6 GHz to 94 GHz and have measurement accuracies from -5 to 1 dBZ; radiometers operate in the 50 GHz to 874 GHz range with accuracies from 0.5 to 1 degree K; conical and cross-track scan modes are used. Our passive optical sensors, consisting of radiometers and spectrometers, collectively operate from the UV into the infrared. These systems measure energy fluxes and atmospheric parameters such as trace gases, aerosols, cloud properties, or altitude profiles of various species. Imager spatial resolution varies from 37 m to 400 m depending on altitude; spectral resolution is as small as 0.5 nm. Many of the airborne systems have been developed to fly on multiple aircraft.

Platnick, Steven E.↗

Active and passive defects in tetragonal tungsten bronze relaxor ferroelectrics

Tetragonal tungsten bronze (TTB) based oxides constitute a large family of dielectric materials which are known to exhibit complex distortions producing incommensurately modulated superstructures as well as significant local deviations from their average symmetry. The local deviations produce diffuse scattering in diffraction experiments. The structure as well as the charge dynamics of these materials are anticipated to be sensitive to defects, such as cation or oxygen vacancies. In this work, in an effort to understand how the structural and charge dynamical properties respond to these two types of vacancy defects, we have performed measurements of dielectric susceptibilities and single crystal diffraction experiments of two types of TTB materials with both ‘filled’ (Ba 2 NdFeNb 4 O 15 and Ba 2 PrFeNb 4 O 15 ) and ‘unfilled’ (Sr 0.5 Ba 0.5 Nb 2 O 6 ) cation sublattices. We also perform these measurements before and after oxygen annealing, which alters the oxygen vacancy concentrations. Surprisingly, we find that many of the diffuse scattering features that are present in the unfilled structure are also present in the filled structure, suggesting that the random fields and disorder that are characteristic of the unfilled structure are not responsible for many of the local structural features that are reflected in the diffuse scattering. Furthermore, oxygen annealing clearly affected both color and dielectric properties, consistent with a diminishment of the oxygen vacancy concentration, but had little effect on observed diffuse patterns.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Mechanochemical topological defects in an active nematic

We propose a reaction-diffusion system that converts topological information of an active nematic into chemical signals. We show that a curvature-activated reaction dipole is sufficient for creating a system that dynamically senses topology by producing a concentration field possessing local extrema coinciding with ±$\frac{1}{2}$ defects. The enabling term is analogous to polarization charge density seen in dielectric materials. We demonstrate the ability of this system to identify defects in both passive and active nematics. Our results illustrate that a relatively simple feedback scheme, expressed as a system of partial differential equations, is capable of producing chemical signals in response to inherently nonlocal structures in anisotropic media. Here, we posit that such coarse-grained systems can help generate testable hypotheses for regulated processes in biological systems, such as morphogenesis, and motivate the creation of bio-inspired materials that utilize dynamic coupling between nematic structure and biochemistry.

42 ENGINEERING↗

Coating of plasma polymerized film

Plasma polymerized thin film coating and the use of other coatings is suggested for passivation film, thin film used for conducting light, and solid body lubrication film of dielectrics of ultra insulators for electrical conduction, electron accessories, etc. The special features of flow discharge development and the polymerized film growth mechanism are discussed.

Morita, S.↗

A concept for global crop forecasting

The mission, instrumentation, and design concepts for microwave radiometer satellites for continuous crop condition forecasting and monitoring on a global basis are described. Soil moisture affects both crop growth and the dielectric properties of the soil, and can be quantified by analysis of reflected radiance passively received by orbiting spacecraft. A dedicated satellite reading a swath 200 km across, with 1 km and 1 K temperature resolution, could track the time-varying changes of solid moisture, sea ice, and water surface temperature. Launched by the Shuttle into an interim orbit, a boost would place the satellite in a 400 or 700 km orbit. Resolution requirements indicate a 45-725 m diam antenna, with 70 dB gain, operating at frequencies of 1.08, 2.03, and 4.95 GHz to ensure atmospheric transparency. Alternative structural concepts include either double-layer tetrahedral or single-layer geodesic trusses as the basic structural members. An analysis of the electrostatic positioning of the parabolic antenna membrane is outlined.

Lovelace, U. M.↗

Mechanism of Hydrogen Passivation in Passivated Contact Si Solar Cells

In this abstract, we discuss the mechanism of hydrogen passivation on symmetrical n-Si/ultra-thin SiO2/polySi structures. The hydrogen was introduced from different hydrogen-containing dielectric layers (AlOx:H and SiNx:H and their stacks), as well as by forming gas anneal (FGA). The effusion of hydrogen both from the dielectric layers and in the underlying poly-Si was explored using a quadrupole mass spectrometer (QMS) and FTIR spectroscopy. We show that the strength of hydrogen bonds depend on the deposition technique as well as hydrogenation mechanism. While a PECVD SiNx:H loses hydrogen at a peak temperature of ~450 degrees C, LPCVD SiNx:H, although having less hydrogen compared to PECVD, effuses at a peak temperature of ~850 degrees C. This becomes important to maintain passivation of passivated contacts after firing of metal contacts at high temperatures. On the other hand, it has been observed that SiNx:H provides larger amount of hydrogen to poly-Si after FGA compared to FGA treated AlOx:H, which acts as a capping layer and helps in retaining the hydrogen up to higher temperatures.

hydrogen bonding configuration↗

Micro-Transfer Printing of Repeaters on Passive Interposer

Silicon-based sensors are central to particle physics experiments and particle tracking detectors. New-generation Large Focal Plane Arrays (LFPAs) cover areas that extend beyond several square meters. Distributing power and transporting data across such areas while maintaining good signal integrity is a complicated challenge. Tiling the detector on an organic interposer would be far too expensive and take too much space while offering little to no advantage regarding signal integrity. Passive silicon interposers are much less expensive and more integrable but would worsen signal integrity because of their inherent higher dielectric constant. Active interposers are a good compromise from the economic and signal integrity standpoint; unfortunately, their yield trends to zero for areas greater than a reticle size, making this technology incompatible with our application. NHanced proposes to duplicate the behavior of a high-yield, low-cost active interposer by printing active microcomponents on a passive interposer with our die-to-wafer micro-transfer printing (MTP) technology. This resolves the signal integrity and power distribution limitations. In Phase I, we designed and simulated analog and digital repeaters to be MTPed onto a passive silicon interposer test wafer.

2.5D↗

Measured and computed performance of a microstrip filter composed of semi-insulating GaAs on a fused quartz substrate

The performance of a microstrip hammerhead filter that has been fabricated on an electrically thin layer of semiinsulating GaAs backed by a fused quartz substrate was measured and compared to results of a three-dimensional finite-difference time-domain (FD-TD) program used to calculate the response of the filter both with and without the GaAs layer. The program, presented by Sheen et al. (1990), discretizes the entire structure and then simulates the propagation of a Gaussian pulse through the filter. The microstrip filter is intended for applications involving ultrathin lifted-off or etched-back GaAs containing both active devices and passive microstrip circuitry backed by a much thicker mechanically rigid low-loss, low-dielectric-constant substrate. The low-pass characteristics of the hammerhead filter with the intermediate GaAs layer are compared with those of the same filter on quartz alone. Both the measured and computed data show a significant shift in cutoff frequency (about 10 percent at the 3 dB points) for a GaAs layer that is 0.007 wavelengths thick at 4 GHz.

Siegel, Peter H.↗

Botswana water and surface energy balance research program. Part 2: Large scale moisture and passive microwaves

The Botswana water and surface energy balance research program was developed to study and evaluate the integrated use of multispectral satellite remote sensing for monitoring the hydrological status of the Earth's surface. The research program consisted of two major, mutually related components: a surface energy balance modeling component, built around an extensive field campaign; and a passive microwave research component which consisted of a retrospective study of large scale moisture conditions and Nimbus scanning multichannel microwave radiometer microwave signatures. The integrated approach of both components are explained in general and activities performed within the passive microwave research component are summarized. The microwave theory is discussed taking into account: soil dielectric constant, emissivity, soil roughness effects, vegetation effects, optical depth, single scattering albedo, and wavelength effects. The study site is described. The soil moisture data and its processing are considered. The relation between observed large scale soil moisture and normalized brightness temperatures is discussed. Vegetation characteristics and inverse modeling of soil emissivity is considered.

Vandegriend, A. A.↗

Spectroscopic ellipsometric characterization of Si/Si(1-x)Ge(x) strained-layer superlattices

Spectroscopic ellipsometry (SE) was employed to characterize Si/Si(1-x)Ge(x) strained-layer superlattices. An algorithm was developed, using the available optical constants measured at a number of fixed x values of Ge composition, to compute the dielectric function spectrum of Si(1-x)Ge(x) at an arbitrary x value in the spectral range 17 to 5.6 eV. The ellipsometrically determined superlattice thicknesses and alloy compositional fractions were in excellent agreement with results from high-resolution x ray diffraction studies. The silicon surfaces of the superlattices were subjected to a 9:1 HF cleaning prior to the SE measurements. The HF solution removed silicon oxides on the semiconductor surface, and terminated the Si surface with hydrogen-silicon bonds, which were monitored over a period of several weeks, after the HF cleaning, by SE measurements. An equivalent dielectric layer model was established to describe the hydrogen-terminated Si surface layer. The passivated Si surface remained unchanged for greater than 2 h, and very little surface oxidation took place even over 3 to 4 days.

Yao, H.↗

Bismuth Passivation Technique for High-Resolution X-Ray Detectors

The Athena-plus team requires X-ray sensors with energy resolution of better than one part in 3,000 at 6 keV X-rays. While bismuth is an excellent material for high X-ray stopping power and low heat capacity (for large signal when an X-ray is stopped by the absorber), oxidation of the bismuth surface can lead to electron traps and other effects that degrade the energy resolution. Bismuth oxide reduction and nitride passivation techniques analogous to those used in indium passivation are being applied in a new technique. The technique will enable improved energy resolution and resistance to aging in bismuth-absorber-coupled X-ray sensors. Elemental bismuth is lithographically integrated into X-ray detector circuits. It encounters several steps where the Bi oxidizes. The technology discussed here will remove oxide from the surface of the Bi and replace it with nitridized surface. Removal of the native oxide and passivating to prevent the growth of the oxide will improve detector performance and insulate the detector against future degradation from oxide growth. Placing the Bi coated sensor in a vacuum system, a reduction chemistry in a plasma (nitrogen/hydrogen (N2/H2) + argon) is used to remove the oxide and promote nitridization of the cleaned Bi surface. Once passivated, the Bi will perform as a better X-ray thermalizer since energy will not be trapped in the bismuth oxides on the surface. A simple additional step, which can be added at various stages of the current fabrication process, can then be applied to encapsulate the Bi film. After plasma passivation, the Bi can be capped with a non-diffusive layer of metal or dielectric. A non-superconducting layer is required such as tungsten or tungsten nitride (WNx).

Chervenak, James↗

Diamond-like carbon coating for passive and active electronics

Systems and methods for building passive and active electronics with diamond-like carbon (DLC) coatings are provided herein. DLC may be layered upon substrates to form various components of electronic devices. Passive components such as resistors, capacitors, and inductors may be built using DLC as a dielectric or as an insulating layer. Active components such as diodes and transistors may be built with the DLC acting substantially like a semiconductor. The amount of sp 2 and sp 3 bonded carbon atoms may be varied to modify the properties of the DLC for various electronic components.

Timpson, Erik Joseph↗

Dielectric screening in perovskite photovoltaics

Abstract The performance of perovskite photovoltaics is fundamentally impeded by the presence of undesirable defects that contribute to non-radiative losses within the devices. Although mitigating these losses has been extensively reported by numerous passivation strategies, a detailed understanding of loss origins within the devices remains elusive. Here, we demonstrate that the defect capturing probability estimated by the capture cross-section is decreased by varying the dielectric response, producing the dielectric screening effect in the perovskite. The resulting perovskites also show reduced surface recombination and a weaker electron-phonon coupling. All of these boost the power conversion efficiency to 22.3% for an inverted perovskite photovoltaic device with a high open-circuit voltage of 1.25 V and a low voltage deficit of 0.37 V (a bandgap ~1.62 eV). Our results provide not only an in-depth understanding of the carrier capture processes in perovskites, but also a promising pathway for realizing highly efficient devices via dielectric regulation.

14 SOLAR ENERGY↗

Structure and Electronic Properties of Mesopores in Si PV Devices with PLEO Contacts

All current state-of-the-art silicon photovoltaic (PV) devices employ some flavor of passivating contact structure to minimize detrimental recombination while providing good conductivity. These properties are most often provided by a dielectric layer (SiNx, Al2O3, or SiOx) that is in contact with the crystalline silicon (c-Si) substrate. The effectiveness of these layers is heavily dependent on the nanoscale structure of both the dielectric layers and the crystalline silicon interface. As an example, the tunneling probability for charge carriers across thin SiOx layers, a process that is critical to maintain high conductivity, is extremely sensitive to the SiOx thickness. SiOx with a thickness below 2 nm readily allows charge carrier tunneling, whereas it is impeded for greater thicknesses. In the latter case it has been shown that modifications to the thermal processing schedule can induce disruptions, or pinholes, in thick SiOx layers that allow transport of charge carriers while maintaining excellent passivation. However, this requires higher temperatures processes that may inhibit widespread adoption by industry. Recently, another option has been presented that may circumvent the necessity for high temperature processing, namely metal assisted chemical etching (MACE). MACE relies on deposition of Ag nanoparticles onto the SiOx layers with subsequent electroless etching to form mesopores in the SiOx layers that are analogous to the pinholes created with high temperature processing. The size and density can be controlled based on the Ag nanoparticle deposition conditions. The resulting contact structure is known as polysilicon on locally etched oxide (PLEO) contacts. The nanoscale structure of the mesopores in PLEO contacts define the device level observables such as recombination current (Jo) and junction resistance. In this work we present atomic resolution transmission electron microscopy (TEM) analysis of mesopores in PLEO contacts formed with a different processing conditions to connect provide insight into how the nanoscale structure of the SiOx layer influences PV device properties. Additionally, we have previously used electron beam induced current (EBIC) to probe local transport properties in Si PV devices with a SiOx layer containing pinholes due to high temperature processing. Using EBIC we were able to directly show the enhance charge carrier transport through the pinholes. Here we also employ EBIC to study non-uniformities in charge carrier recombination and transport associated with mesopores in PLEO contacts and compare these results with our previous work on devices with pinholes in the SiOx formed through high temperature processes. The products of this work provide critical information that is required to both further optimize performance of Si PV devices with PLEO contact and to drive future adoption of this technology by industry.

ENGINEERING,SOLAR ENERGY↗

Comparison of soil dielectric mixing models for Soil Moisture Retrieval using SMAP Brightness Temperature over croplands in India

The accurate estimation of soil moisture (SM) using microwave remote sensing depends mostly on careful selection of retrieval parameters among which the soil dielectric mixing model is the important one. These models are often categorized into empirical, semi-empirical or volumetric based on their methodologies and input data requirements. To study in detail, the comparative performance of four dielectric mixing models -- Wang & Schmugge model, Hallikainen model, Dobson model and Mironov model were used with Soil Moisture Active Passive (SMAP) L-band brightness temperature and Single Channel Algorithm for SM retrieval over agricultural landscapes in India. The highest performance statistics combination in terms of Root Mean Square Error (RMSE), correlation coefficient (R^(2)) and percentage bias (PBIAS) against the concurrent in-situ SM measurements were calculated at the selected validation sites. The overall results indicate that the best performance was given by the Mironov model (RMSE = 0.07 cu. m/cu. m), followed by Wang & Schmugge model (RMSE = 0.08 cu. m3/cu. m), Hallikainen model (RMSE = 0.09 cu. m/cu. m), Dobson model (RMSE = 0.10 cu. m/cu. m) and original SMAP radiometer SM (RMSE = 0.12 cu. m/cu. m). Findings of this study provides important insights into application and performance of dielectric mixing models in mapping surface SM variations. This study also underlines the pivotal role of local conditions for SM retrieval which should be carefully included in the algorithms.

Swati Suman↗

A 311-GHz Fundamental Oscillator Using InP HBT Technology

This oscillator uses a single-emitter 0.3- m InP heterojunction bipolar transistor (HBT) device with maximum frequency of oscillation (fmax) greater than 500 GHz. Due to high conductor and substrate losses at submillimeterwave frequencies, a primary challenge is to efficiently use the intrinsic device gain. This was done by using a suitable transmission-line media and circuit topology. The passive components of the oscillator are realized in a twometal process with benzocyclobutene (BCB) used as the primary transmission line dielectric. The circuit was designed using microstrip transmission lines. The oscillator is implemented in a common-base topology due to its inherent instability, and the design includes an on-chip resonator, outputmatching circuitry, and an injection-locking port, the port being used to demonstrate the injection-locking prin ciple. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Ad di tionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. The injection-locking reference signal is generated using a 2 20 GHz frequency synthesizer, followed by a doubler, active tripler, a W-band amplifier, and then a passive tripler. Therefore, the source frequency is multiplied 18 times to obtain a signal above 300 GHz that can be used to injection lock the oscillator. Measurement shows that injection locking has improved the phase noise of the oscillator and can be also used for synchronizing a series of oscillators. A signal conductor is implemented near the BCP -InP interface and the topside of the BCB layer is fully metallized as a signal ground. Because the fields are primarily constrained in the lower permittivity BCB region, this type of transmission line is referred to as an inverted microstrip. In addition, both common-emitter and commonbase circuits were investigated to determine optimum topology for oscillator design. The common -base topology required smaller amount of feedback than the common-emitter design, therefore preserving device gain, and was chosen for the oscillator design. The submillimeter-wave region offers several advantages for sensors and communication systems, such as high resolution and all-weather imaging due to the short-wavelength, and improved communication speeds by access to greater frequency bandwidth. This oscillator circuit is a prototype of the first HBT oscillator operating above 300 GHz. Additional development is necessary to increase the output power of the circuit for radar and imaging applications.

Gaier, Todd↗

Dielectric Elastomer Actuated Systems and Methods

The system of the present invention includes an actuator having at least two electrodes, an elastomeric dielectric film disposed between the two electrodes, and a frame attached to the elastomeric dielectric film. The frame provides a linear actuation force characteristic over a displacement range. The displacement range is preferably the stroke of the actuator. The displacement range can be about 5 mm and greater. Further, the frame can include a plurality of configurations, for example, at least a rigid members coupled to a flexible member wherein the frame provides an elastic restoring force. In preferred embodiments, the rigid member can be, but is not limited to, curved beams, parallel beams, rods and plates. In a preferred embodiment the actuator can further include a passive element disposed between two flexible members such as, for example, links to tune a stiffness characteristic of the actuator. The passive element can be a bi-stable element. Further, the actuator can include a plurality of layers of the elastomeric dielectric film integrated into the frame. The elastomeric film can be made of different materials such as, for example, acrylic, silicone and latex.

Dubowsky, Steven↗

The Canadian Experiment for Freeze/Thaw in 2012 or 2013 CanEx-FT12 or FT13

General objectives of the experiment are: Pre-launch Calibration/Validation of SMAP Freeze/Thaw products and retrieval algorithms and rehearsal for Soil Moisture Active-Passive (SMAP) post launch validation. The basis of the radar freeze-thaw measurement is the large shift in dielectric constant and backscatter (dB) between predominantly frozen & thawed conditions. The Dielectric constant of liquid water varies with frequency, whereas that of pure ice is constant

permafrost↗