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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Process and structures for fabrication of solar cells

Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

14 SOLAR ENERGY↗
DOE OSTI2023

Pinhole electrical conductivity in polycrystalline Si on locally etched SiN$_y$/SiO$_x$ passivating contacts for Si solar cells

State-of-the-art monocrystalline Si (c-Si) solar cells require passivating contacts to achieve a high degree of charge-carrier separation and collection. In this work, we focus on boron-doped polycrystalline Si on locally etched silicon nitride/silicon oxide (PLENO) passivating contacts. In PLENO contacts, excellent surface passivation is provided by the ~10 nm dielectric bilayer, while pinholes in the dielectric bilayer, that are filled with doped polycrystalline Si, provide charge-carrier selectivity and transport. During PLENO fabrication, etch undercut in the dielectric bilayer occurs. Here, using electrical characterization and microscopies, we show that undercut causes pinholes to be electrically resistive in PLENO. A processing sequence that eliminates the undercut in the final PLENO structure results in electrically conductive pinholes with low contact resistivity.

14 SOLAR ENERGY↗
NASA NTRS2016

Deep Charging Evaluation of Satellite Power and Communication System Components

A set of deep charging tests has been carried out by NASA's Marshall Space Flight Center on subscale flight-like samples developed by Space Systems/Loral, LLC. The samples, which included solar array wire coupons, a photovoltaic cell coupon, and a coaxial microwave transmission cable, were placed in passive and active (powered) circuit configurations and exposed to electron radiation. The energy of the electron radiation was chosen to deeply penetrate insulating (dielectric) materials on each sample. Each circuit configuration was monitored to determine if potentially damaging electrostatic discharge events (arcs) were developed on the coupon as a result of deep charging. The motivation for the test, along with charging levels, experimental setup, sample details, and results will be discussed.

Schneider, T. A.↗
DOE OSTI2022

Terahertz Nanoimaging of Perovskite Solar Cell Materials

Direct visualization and quantitative evaluation of charge filling in grain boundary (GB) traps of hybrid metal halide perovskites require dynamic conductivity imaging simultaneously at the terahertz (THz) frequency and nanometer (nm) spatial scales not accessible by conventional transport and imaging methods used thus far. Here, in this study, we apply a THz near-field nanoconductivity mapping to the archetypal metal halide perovskite photovoltaic films and demonstrate that it is a powerful tool to reveal distinct dielectric heterogeneity due to charge trapping and degradation at the single GB level. Our approach visualizes the filled defect ion traps by local THz charge conductivity and allows for extracting a quantitative profile of trapping density in the vicinity of GBs with sub-20 nm resolution. Furthermore, imaging material degradation by tracking local nanodefect distributions overtime identifies a distinct degradation pathway that starts from the GBs and propagates inside the grains over time. The single GB, nano-THz conductivity imaging demonstrated here can be extended to benchmark various perovskite materials and devices for their global photoenergy conversion performance and local charge transfer proprieties of absorbers and interfaces.

14 SOLAR ENERGY↗
NASA NTRS1977

Materials and techniques for spacecraft static charge control

An overview of the design, development, fabrication, and testing of transparent conductive coatings and conductive lattices deposited or formed on high resistivity spacecraft dielectric materials to obtain control static charge buildup on spacecraft external surfaces is presented. Fabrication techniques for the deposition of indium/tin oxide coatings and copper grid networks on Kapton and FEP Teflon films and special frit coatings for OSR and solar cell cover glasses are discussed. The techniques include sputtering, photoetching, silkscreening, and mechanical processes. A facility designed and built to simulate the electron plasma at geosynchronous altitudes is described along with test procedures. The results of material characterizations as well as electron irradiation aging effects in this facility for spacecraft polymers treated to control static charge are presented. The data presents results for electron beam energies up to 30 kV and electron current densities of 30 nA/cm squared. Parameters measured include secondary emission, surface leakage, and through the sample currents as a function of primary beam energy and voltage.

Amore, L. J.↗
NASA NTRS1977

Automated fabrication of back surface field silicon solar cells with screen printed wraparound contacts

The development of a process for fabricating 2 x 4 cm back surface field silicon solar cells having screen printed wraparound contacts is described. This process was specifically designed to be amenable for incorporation into the automated nonvacuum production line. Techniques were developed to permit the use of screen printing for producing improved back surface field structures, wraparound dielectric layers, and wraparound contacts. The optimized process sequence was then used to produce 1852 finished cells. Tests indicated an average conversion efficiency of 11% at AMO and 28 C, with an average degradation of maximum power output of 1.5% after boiling water immersion or thermal shock cycling. Contact adherence was satisfactory after these tests, as well as long term storage at high temperature and high humidity.

Thornhill, J. W.↗
DOE OSTI2025

Development of ~25% Efficient Double Side Screen Printed Poly-Si/SiO x Passivated Contact Solar Cells

This program aims to overcome these challenges and develop high-efficiency (24-25%) double-side (DS) TOPCon solar cells by maximizing passivation on both sides while mitigating light absorption losses. To achieve this, the program will implement either thin (≤ 20 nm) homogeneous n-TOPCon on the entire front surface or selective area thick (≥ 100 nm) n-TOPCon only underneath the front metal contact with ~90% field region composed of dielectric passivated textured n-Si in between the poly-Si/metal grid. The rear side will feature ~250 nm-thick full-area planar p-TOPCon, which functions as the rear junction. Recombination and parasitic absorption losses in the front and rear TOPCon layers will be minimized by tailoring their doping profiles and thickness. Additionally, the device performance will be further enhanced through the optimization of bulk parameters, including the carrier lifetime, resistivity, and thickness of the n-type Si absorber. Finally, advanced metallization techniques, such as fine-line printing, and floating busbar or busbar-less designs, will be employed to reduce recombination, resistive, and optical losses. The program started with the development of a technology roadmap for DS-TOPCon cells to achieve target efficiency.

14 SOLAR ENERGY↗
DOE OSTI2025

Nanopinhole-Enabled, Hole-Selective Poly-Si/SioxNy Passivating Contacts on Textured c-Si for Si Solar Cells

The next-generation silicon photovoltaics will be based on passivating electron- and hole-selective contacts with both very low interface recombination and contact resistivities. While the emerging mainstream TOPCon technology has developed excellent electron-selective poly-Si/tunneling SiOx contacts, hole-selective contacts, especially on textured surfaces, have remained a significant challenge. This contribution introduces novel high-performance hole selective poly-Si contacts on pyramid-textured Si, enabled by electrochemically produced hole transport nanopinholes in a 10 nm oxynitride passivating dielectric stack capped by p+ poly-Si. The highly passivating oxynitride layer is produced via atomic intermixing of O and N atoms in the initial SiOx/SiNy layer stack upon thermal annealing. Carrier transport is governed by nanopinhole density and size are tuned by Ag nanoparticle electrodeposition and surface attachment chemistries. This results in passivating hole contact resistivities in the m..omega..-cm2 range, while preserving interface recombination current prefactor around 5 fA/cm2.

14 SOLAR ENERGY↗
DOE OSTI2024

Passivated Contacts for Direct Wafer Product (Final Technical Report)

This TCF project developed a thin-oxide (SiO 2 )/polycrystalline silicon (poly-Si) passivated contact solar cell on CubicPV's (formally 1366 Technologies, Inc.) Direct Wafer® Product (DWP) kerfless wafers. The project used two NREL-developed technologies described in U.S. Patent No. 9,911,873, Hydrogenation of Passivated Contacts and U.S. Patent Application Serial No. 15/890,172, Doped Passivated Contacts . The project was motivated by a potential higher efficiency cell (compared to a PERC cell) using passivated contacts on the ultra-low cost kerfless wafers grown using the Direct Wafer process. The hope was to accelerate market adoption of the cell and wafer by delivering the lowest LCOE in the PV industry. The project tested both n-type and p-type SiO 2 /poly-Si passivated contacts grown by thermal oxidation and plasma enhanced chemical vapor deposition (PECVD) of the poly-Si layer on DWP with varying wafer resistivities. Both deposition techniques are industry standards and thus economically viable methods for commercializing the contacts. The results indicated that both n-type and p-type poly-Si passivated contacts can be formed on polycrystalline DWP wafers, but implied open-circuit voltages (i Voc ) were limited to below 0.65 mV (compared with ~ 730 mV on n-Cz wafers). Diffusion of H to the Si/SiO 2 /poly-Si interface was key to obtaining high i Voc values. In this study, H was diffused from a high-temperature SiN x layer deposited over the poly-Si layer during a high-temperature firing step, similar to one used for screen printed metals. The study concluded that poly-Si passivated contacts on DWP wafers passivated the surface of the wafers as well as PERC passivated surfaces, which use a less expensive dielectric layer stack. The project showed that Direct Wafer Product wafers grown by CubicPV could produce high i Voc values (~0.647 mV), which could produce a cell over 20% efficient with proper processing and metallization. These cells, though not economically viable in 2024 as a stand-alone cell, could be integrated with a wide-bandgap top solar cell to form a two-junction tandem cell that could be viable under certain circumstances. This is because the bottom cell of a 30%, two-terminal tandem only needs to be a 20% cell under one-sun conditions. Thus, the DWP could be an ideal low-cost wafer for tandems. The project also revealed that a TOPCon type cell could be formed on a p-type DWP wafer using a P-diffused emitter and a p-type poly-Si contact. In fact, the p-type version of the poly-Si contact out-performed the n-type version for a variety of wafer resistivities, from highly doped to lowly doped. This curiosity requires more work to understand because on Cz wafers, the n-type poly-Si contact is of much higher quality than the p-type version.

14 SOLAR ENERGY↗
NASA NTRS1985

Investigation of test methods, material properties, and processes for solar cell encapsulants

Progress in solar energy technology is reported in the following areas: aging and life prediction methodology and devices for solar cell encapsulation; the function of adhesion chemistry, primers, and a new diagnostic technique for estimations of bond durability; a study of fire retardant formulations for decreasing the potential flammability of solar modules; initial studies of the electrical insulating properties of encapsulation materials and measurement of the intrinsic dielectric strength; antisoiling compounds for the prevention of soil build-up on the outer surface of the module; and low temperature processing encapsulants that permit module fabrication at temperatures less than 100 C. Another area of study has been added to determine the degree to which formulation and processes affect the module quality and manufacturing yield.

Willis, P. B.↗
DOE OSTI2021

23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations

A 2-terminal, dual-junction, epitaxially integrated, GaAsP/Si tandem solar cell with an 3rd party certified efficiency of 23.4 % was fabricated via MOCVD growth on an ex-situ produced Si sub cell. The drastic efficiency improvement over the authors previous peer-reviewed demonstration of such a device architecture is examined. Critical advancements in top cell design to maximize short wavelength response were critical in enabling improved top cell response. An in-depth analysis of this champion tandem cell has identified key loss mechanisms which elucidate the pathway for further efficiency gains. First, voltage dependent collection efficiency in the GaAsP top cell is the primary cause of fill factor losses currently limiting efficiency. Analysis of spectrally resolved I–V measurements and analytical device modeling and indicate poor diffusion length due to elevated dislocation densities as the likely cause for the voltage dependent collection efficiency. Second, modeling for the GaAs 0.75 P 0.25 top cell, using experimental data at multiple dislocation densities, provides quantitative understanding of the current and voltage losses associated with threading dislocations providing a clear efficiency pathway with reduction in dislocation density. Finally, Si subcell modeling identifies the pathway for further Si subcell advances over the present, simplistic design, which has yet to employ the known benefits of rear surface texture or dielectric passivation.

14 SOLAR ENERGY↗
NASA NTRS1992

Arcing in space structures in low Earth orbit

This report describes results of an experimental and theoretical program to investigate arcing of structures containing dielectric and conducting materials when they are biased negatively with respect to a plasma. An argon ion source generated Ar(+) ions of directed energy 20 to 40 eV and density approximately 10(exp 7) cm(exp -3) that impinged upon samples containing a dielectric material on top of a negatively biased Kovar plate. Arcing events were studied for bias voltages between -300 and -1000V with respect to the ion beam. The samples were Dow Corning 93-500 adhesive on Kovar, fused silica cover slips bonded on Kovar, and silicon solar cells mounted on Kovar. Measurements of discharge current, Kovar plate voltage, and radiation from the arc versus time were carried out. Microsecond duration exposure images and optical spectra in the 0.24 to 0.40 micron band were also acquired during arcing events. Arcing events were found to be associated with exposed adhesive and means were found to eliminate arcing altogether. The charging of a silica cover plate and the fields around the plate were calculated using a particle-in-cell code. Models were developed to explain the ignition of the arc and the physical processes occurring during the discharge.

Upschulte, B. L.↗
DOE OSTI2021

Outdoor performance of a tandem InGaP/Si photovoltaic luminescent solar concentrator

Here, we report the design, fabrication and outdoor characterization of a tandem luminescent solar concentrator/Si multi-junction photovoltaic module. Our tandem LSC/Si device consists of an InGaP LSC functioning as a top cell and a passivated contact Si bottom cell. The LSC comprises of an InGaP microcell array coupled to a polymer waveguide, loaded with CdSe/CdS core-shell quantum dot luminophores. The light trapping efficiency of the LSC waveguide is enhanced by encapsulation with photoluminescence trapping mirrors consisting of dielectric multilayer thin films. We demonstrate the performance of the LSC/Si device through a series of outdoor tests under various irradiance conditions conducted at the National Renewable Energy Laboratory. We report the first outdoor testing data of an LSC/Si tandem module, displaying maintained performance across varied diffusivity conditions for the LSC component. Finally, we model the tandem module performance using a ray optic simulation-based multiphysics model and forecast a pathway for high efficiency tandem LSC/Si module performance.

14 SOLAR ENERGY↗
NASA NTRS1972

Inversion layer solar cell fabrication and evaluation

Silicon solar cells with induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. This charged layer was supplied through three mechanisms: (1) supplying a positive potential to a transparent electrode separated from the silicon surface by a dielectric, (2) contaminating the oxide layer with positive ions, and (3) forming donor surface states that leave a positive charge on the surface. A movable semi-infinite shadow delineated the extent of sensitivity of the cell due to the inversion region. Measurements of the inversion layer cell response to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. Theory of the conductance of the inversion layer vs. strength of the inversion layer was compared with experiment and found to match. Theoretical determinations of junction depth and inversion layer strength were made as a function of the surface potential for the transparent electrode cell.

Call, R. L.↗
DOE OSTI2020

High-efficiency solar thermophotovoltaic system using a nanostructure-based selective emitter

Herein, we present the design, fabrication, optimization, and experimental results of a high-efficiency planar solar thermophotovoltaic (STPV) system utilizing a micro-textured absorber and a nanostructure multilayer metal-dielectric coated selective emitter fabricated on a tungsten (W) substrate. Light absorptance of more than 90% was achieved at visible and near-infrared wavelengths using the microtextured absorbing surface. The nanostructure selective emitter consists of two thin-film optical coatings of silicon nitride (Si3N4) and a layer of W in between to increase the surface emissivity in spectral regimes matching the quantum efficiency of the thermophotovoltaic (TPV) cells. Gallium antimonide (GaSb)-based TPV cells are used in our STPV design. The experiment was conducted at different operating temperatures using a high-power continuous wave laser diode stack as a simulated source of concentrated incident radiation. Our experimental setup measured a maximum electrical output power density of 1.71 W/cm 2 at 1676 K STPV temperature, and the overall power conversion efficiency of 8.4% after normalizing the output power density to the emitter area. This is the highest STPV system efficiency reported so far for any experimental STPV device. The incident optical laser power on the absorber side was 131 W. This is equivalent to a solar concentration factor of ~2100, which is within the practical limit and readily achievable with Fresnel lens setup.

14 SOLAR ENERGY↗
NASA NTRS1981

Optimization of large area solar cells for low cost space application

The development of large-area solar cell manufacturing techniques for production of up to 10 kW/month of cells for use on the Shuttle Power Extension Package is detailed. Design goals for the cells were 14% efficiency at 135.3 mW/sq cm AM0 illumination for a 10 ohm-cm BSF/reflector cell, or 12.8% for a 2 ohm-cm BSR cell. Use of terrestrial cell technology to produce CVD SiO2 dielectric insulators for 3-in. ingot cells yielded satisfactory contact integrity. Fused silica coverings with thicknesses of 0.004 in. have allowed exploration of conventional and wraparound cell configurations due to inherent flexibilities of the frosted covers. One production run can now handle 108 3-in. wafers for the wraparound form or 216 in one-sided contact evaporations, with both processes taking 70 mins. Current contact grid designs for space use production permits average efficiencies of 12.8%.

Matthei, K. W.↗
DOE OSTI2021

A Poisson–Nernst–Planck Model of Ion Transport and Interface Segregation in Metal–Insulator–Semiconductor Structures and Solar Cells

A numerical model that describes the transport of mobile ionic species in metal–insulator–semiconductor (MIS) and photovoltaic (PV) devices subject to temperature and voltage stress is presented. The finite element method (FEM) is used to solve the Nernst–Planck equation while imposing Poisson's equation self-consistently as a restriction for the electrostatic potential. This allows the contribution of the ionic species to the potential to be taken into account. Using a variational formulation eases the implementation of diverse boundary conditions, including the incorporation of segregation kinetics at the device interfaces. Segregation across the dielectric–semiconductor interface is relevant to modeling the electronic device degradation in systems where contamination reaches the semiconductor. The model in closed systems with no-flux boundary conditions is validated first. In the limiting case of low contamination levels with respect to the gate bias, the FEM solution matches analytically derived approximations. Then, the implementation is broadened to include an open boundary at the dielectric–semiconductor interface to account for leakage of ions. The predicted time dependence of the flatband voltage in Na-contaminated MIS test structures agrees well with measurements. This model successfully captures the role of long-range ion transport at concentrations of relevance to electronic and PV device instability and neuromorphic computing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1984

Method for calculating multidimensional electric fields in photovoltaic modules

A finite element method for evaluating the electrical isolation characteristics of photovoltaic modules was developed; its accuracy was verified by comparison with an exact solution for a geometry similar to that of solar cells. Tests on a square test coupon, employed in electrical isolation tests, and a group of disc-shaped solar cells illustrated the finite element method's usefulness in evaluating module encapsulation designs. Finite element models had to avoid adjacent large and small elements and elements with large aspect ratios, and the NASTRAN output had to be curve fitted to calculate the maximum field. Geometric limits were indicated: cells with very sharp edges, and cells much thinner or thicker than the dielectric pottant layer.

Kallis, J. M.↗