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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Pressure-Modulated Energy Transfer Dynamics in Mn 2+ -Doped CdS/ZnS Core/Shell Quantum Dots

Transition metal doping in semiconductor quantum dots (QDs) significantly impacts their optical properties, thus expanding the range of their potential optoelectronic applications. This study investigates the pressure-dependent energy transfer dynamics in Mn 2+ -doped CdS/ZnS core/shell QDs, focusing on how external hydrostatic pressure modulates these dynamics and optical properties. By synthesizing Mn 2+ -doped QDs with varying Mn 2+ doping concentrations, we explore the effects of the pressure on photoluminescence (PL) spectra and energy transfer efficiency. Our study reveals that increasing pressure induces a blueshift in the QD host bandgap PL and a redshift in the Mn 2+ dopant PL. The pressure-induced shifts highlight a unique modulation mechanism where the energy transfer efficiency decreases with pressure due to reduced wave function overlap between host excitons and Mn 2+ dopants. Detailed analysis of the PL quantum yields and energy transfer rate constants provides insights into these dynamics, suggesting that the pressure can effectively and reversibly regulate the energy transfer efficiencies and rates. In conclusion, these results have implications for developing pressure-sensitive configurable devices and exploring pressure-induced phenomena in doped nanomaterials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Non-Equilibrium Doping of Poly-Si:Ga/SiOx Passivating Contacts Solar Cells

In this contribution, we show that Ga-hyperdoped poly-Si/SiOx contacts are realized by pulsed laser annealing and post-hydrogenation. The motivation behind this work is to improve the inferior performance of boron-doped poly- Si/SiOx contacts when compared to the phosphorus-doped contacts. Here we used Ga as a novel p-type dopant to replace B, as B is known to accumulate at the interface between the oxide and the crystalline silicon and cause recombination. Due to a high diffusivity of Ga in oxide and a much higher segregation coefficient (Si:SiOx), Ga is shown to be immune to the oxide pileup phenomenon. However, Ga has a low solid solubility limit in Si (5x10^19 cm-3), which is not enough to form a low resistivity contact. To overcome this problem, we explored pulsed laser annealing via excimer laser by varying the laser energy densities and pulses. The passivation and electrical properties are studied systematically using photoluminescence (PL), secondary ion mass spectrometry (SIMS), and Van der Pauw-Hall measurements. We show an active Ga doping concentration above 1x10^20 cm^-3, which is above the solid solubility limit of Ga in Si. Good passivation quality is demonstrated with the highest implied Voc (iVoc) of 721 mV on single side polished samples. Furthermore, a low diode contact resistivity of ~22 m..omega.. cm^2 is obtained using Ti/Ag contacts, with minimal metal-to-semiconductor contact resistivity of 0.9 m..omega.. cm^2.

non-equilibrium doping↗
DOE OSTI2025

CMS HGCAL ECON-D ASIC : Impact of CMOS fabrication process tuning on performance and radiation tolerance

The CMS experiment’s High Granularity Calorimeter (HGCAL) upgrade will replace CMS’s existing endcap calorimeters in preparation for the High Luminosity LHC. To effectively use over 6 million channels of this “imaging”calorimeter, CMS has developed two novel Endcap Concentrator (ECON) ASICs to perform data compression/selection on detector. The ECON-D ASIC operates on the 750kHz data path, and the ECON-T ASIC on the 40MHz trigger path. These 65 nm CMOS ASICs are radiation tolerant to 200 Mrad and low power, operating at less than 2.5 mW/channel. The first full-functionality prototype ECONs were produced and characterized in 2021-23, and an initial engineering run was performed in 2024. ECON-D radiation testing for the engineering run revealed that the chip’s internal SRAMs produce intermittent read errors for a non-negligible fraction of chips. Further investigation indicated that the SRAM performance is highly sensitive to the exact parameters of the CMOS fabrication process. To both study this process sensitivity and mitigate SRAM performance issues, twenty ECON wafers were produced in 2025 with a range of doping concentrations designed to tune the underlying transistor threshold voltage by 0%, 5%, 10%, and 15% from nominal. This talk will present first measurements of ECON-D performance, power consumption, and radiation tolerance for these four variations of CMOS process.

Syal, Chinar [Fermilab]↗
DOE OSTI2020

Electron Beam Infrared Nano-Ellipsometry of Individual Indium Tin Oxide Nanocrystals

Leveraging recent advances in electron energy monochromation and aberration correction, we record the spatially resolved infrared plasmon spectrum of individual tin-doped indium oxide nanocrystals using electron energy-loss spectroscopy (EELS). Both surface and bulk plasmon responses are measured as a function of tin doping concentration from 1–10 atomic percent. Furthermore, these results are compared to theoretical models, which elucidate the spectral detuning of the same surface plasmon resonance feature when measured from aloof and penetrating probe geometries. We additionally demonstrate a unique approach to retrieving the fundamental dielectric parameters of individual semiconductor nanocrystals via EELS. This method, devoid from ensemble averaging, illustrates the potential for electron-beam ellipsometry measurements on materials that cannot be prepared in bulk form or as thin films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Super Flexible Transparent Conducting Oxide-Free Organic–Inorganic Hybrid Perovskite Solar Cells with 19.01% Efficiency (Active Area=1 cm 2 )

Highly efficient organic-inorganic hybrid perovskite solar cells (OIHP-SCs) are often fabricated on a transparent conducting oxide (TCO) substrate such as indium tin oxide (ITO). However, the presence of TCOs is disadvantageous to the development of flexible OIHP-SCs due to the brittle nature of ITO which is easily breakable during bending. Herein, a flexible TCO-free OIHP-SC is demonstrated by using lithium bis(trifluoromethane)sulfonimide (Li-TFSI) as a codopant for the single-layer graphene transparent conducting electrode and poly(triarylamine) hole-transporting material (HTM) on a flexible polydimethylsiloxane substrate. The optical and electrical properties of the Li-TFSI-doped graphene substrate are measured by controlling the doping amount and the best conditions for charge extraction are established at a doping concentration of 20 mm Li-TFSI, thus optimizing the device photovoltaic performance. As a result, a highest power conversion efficiency of 19.01% is demonstrated by the flexible TCO-free OIHP-SC devices with an active area of 1 cm 2 . In addition, the flexible TCO-free OIHP-SCs exhibit good bending stability after 5000 bending cycles at radii of 6, 4, and 2 mm and excellent light soaking stability under 1 Sun light intensity over 1000 h as opposed to the poor stability when using poly(3,4-ethylenedioxythiophene) polystyrene sulfonate as the HTM.

14 SOLAR ENERGY↗
DOE OSTI2026

15.3% AM1.5G Efficiency GaAs Solar Cells Fabricated via an Epitaxy-Free Process

Here, we report simple and potentially low-cost techniques for creating high-quality n-type gallium arsenide (GaAs) and GaAs p/n junctions and fabricate GaAs p/n junction solar cells. Detailed-balance modeling suggests that 20% AM1.5G efficiency p/n homojunction devices may be possible if the surface doping concentration can be limited to values less than ∼ 5 × 10 19 cm −3 . Our process exploits an open-tube, vapor-phase, deposition-free, zinc diffusion technique for forming p-type layers in melt-grown n-GaAs substrates that results in sheet resistances less than 1 kΩ/$\square$. In addition, we have improved the minority carrier diffusion lengths of melt-grown GaAs from less than one micron to over five microns using an open-tube, vacuum-free, annealing process which reduces the density of EL2 midgap defects. Finally, we have combined these advances to fabricate epitaxy-free, GaAs solar cells with a validated AM1.5G efficiency of 15.3%.

14 SOLAR ENERGY↗
DOE OSTI2020

Effects of trapped charge on the signal formation and detection efficiency for subsequent pulses in irradiated silicon sensors

Envisaged high energy physics experiments like the Future Circular Collider require unprecedented radiation hardness of the detectors, as well as short readout time due to high luminosity and occupancy. Silicon has proven to be extremely radiation hard. Sufficient signals can be recorded even at fluences close to 1 ∙ 1 0 16 n e q / cm 2 . Here, the signal formation was studied in silicon strip sensors, irradiated and annealed until the phenomenon of charge multiplication occurred. ATLAS12EC R0 mini sensors were tested by means of edge TCT measurements at temperatures around –20 °C. It was observed that the detection of subsequent signals separated up to several microseconds is altered by the charge trapped during the preceding pulses. The effects of trapped charge on the electrical configuration of a sensor are well known as a polarization or pumping effect in larger band-gap materials like diamond, but is often neglected for silicon at this relatively high temperature. The investigation of the effect created by trapped charges in silicon sensors using subsequent pulses allows to gain information on important parameters such as de-trapping times. Furthermore, it shows a severe impact on the sensor performance in a pile-up scenario. The irradiation fluence and hence the effective doping concentration, the temperature and the amount of initially created charge have a large impact on this phenomenon. The measurements presented help to characterize this phenomenon; particular attention was paid to the application point of view.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Experimental Study of Acceptor Removal in UFSD

The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. In this study, the effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Polysiloxane Scintillators for Efficient Neutron and Gamma-Ray Pulse Shape Discrimination

Plastic scintillators based on thermoplastics, such as polystyrene and poly(vinyl toluene) (PVT), are capable of neutron and γ radiation detection via pulse shape discrimination (PSD) when overdoped with select fluorescent molecules. This class of plastic scintillator has been extensively studied but is limited to applications suitable for thermoplastics. For applications requiring flexibility, scintillators composed of elastomers, such as polysiloxanes, offer an alternative to PVT scintillators. Polysiloxane scintillators are inherently flexible and have a short processing time on the order of 3 h in air and equivalent or better detection capability at reduced doping concentration (<5 wt %). This work presents polysiloxane-based scintillators, containing only 1–5 wt % of 2,5 diphenyl-oxazole (PPO) or 9,9-dimethyl-2-phenyl-9H-fluorene (PhF) as primary dopants and 9,9-dimethyl-2,7-distyryl-9H-fluorene (SFS) as a wavelength shifter. A 5 wt % PPO polysiloxane sample had improved neutron and gamma ray PSD and comparable light yield than EJ-299-33 tested under the same conditions, i.e., figure of merit (FoM) of 1.33 ± 0.03 at 450 keV ee and light yield of 94% relative to EJ-299-33. The 5 wt % PhF-polysiloxane sample had a higher light yield, 144% of EJ-299-33 but lower FoM under the same conditions (FoM of 1.09 ± 0.03). Furthermore, this work highlights the potential of polysiloxanes as a matrix for PSD capable plastic scintillators.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Local Background Hole Density Drives Nonradiative Recombination in Tin Halide Perovskites

In this study, we use multimodal microscopy to study carrier recombination in semiconducting tin halide perovskite films based on PEA 0.2 FA 0.8 SnI 3 (PEA = phenethylammonium; FA = formamidinium). We use the observation of pseudo-first-order photoluminescence (PL) decay kinetics to establish a method for quantifying the hole dopant level and nonradiative recombination rate constant. We find that untreated PEA 0.2 FA 0.8 SnI 3 films exhibit large hole doping concentrations of p 0 ≈ 10 19 cm –3 , which is reduced to p 0 ≈ 10 16 cm –3 after SnF 2 treatment. While it is well-known that the radiative recombination rates are increased with p 0 , we reveal that the nonradiative rate is also increased. We find that p-type regions in untreated PEA 0.2 FA 0.8 SnI 3 films are centers for nonradiative recombination, which are diminished in films with p 0 ≈ 10 16 cm –3 . We discover significant PL heterogeneity even in PEA 0.2 FA 0.8 SnI 3 films with moderate dopant levels, suggesting that new strategies to eliminate deleterious defects in PEA 0.2 FA 0.8 SnI 3 must be developed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide

The electronic and optical properties of two-dimensional materials can be strongly influenced by defects, some of which can find significant implementations, such as controllable doping, prolonged valley lifetime, and single-photon emissions. Here, we demonstrate that defects created by remote N 2 plasma exposure in single-layer WS 2 can induce a distinct low-energy photoluminescence (PL) peak at 1.59 eV, which is in sharp contrast to that caused by remote Ar plasma. This PL peak has a critical requirement on the N 2 plasma exposure dose, which is strongest for WS 2 with about 2.0% sulfur deficiencies (including substitutions and vacancies) and vanishes at 5.6% or higher sulfur deficiencies. Both experiments and first-principles calculations suggest that this 1.59 eV PL peak is caused by defects related to the sulfur substitutions by nitrogen, even though low-temperature PL measurements also reveal that not all the sulfur vacancies are remedied by the substitutional nitrogen. The distinct low-energy PL peak suggests that the substitutional nitrogen defect in single-layer WS 2 can potentially serve as an isolated artificial atom for creating single-photon emitters, and its intensity can also be used to monitor the doping concentrations of substitutional nitrogen.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Light-induced Kondo-like exciton-spin interaction in neodymium(II) doped hybrid perovskite

Abstract Tuning the properties of a pair of entangled electron and hole in a light-induced exciton is a fundamentally intriguing inquiry for quantum science. Here, using semiconducting hybrid perovskite as an exploratory platform, we discover that Nd 2+ -doped CH 3 NH 3 PbI 3 (MAPbI 3 ) perovskite exhibits a Kondo-like exciton-spin interaction under cryogenic and photoexcitation conditions. The feedback to such interaction between excitons in perovskite and the localized spins in Nd 2+ is observed as notably prolonged carrier lifetimes measured by time-resolved photoluminescence, ~10 times to that of pristine MAPbI 3 without Nd 2+ dopant. From a mechanistic standpoint, such extended charge separation states are the consequence of the trap state enabled by the antiferromagnetic exchange interaction between the light-induced exciton and the localized 4 f spins of the Nd 2+ in the proximity. Importantly, this Kondo-like exciton-spin interaction can be modulated by either increasing Nd 2+ doping concentration that enhances the coupling between the exciton and Nd 2+ 4 f spins as evidenced by elongated carrier lifetime, or by using an external magnetic field that can nullify the spin-dependent exchange interaction therein due to the unified orientations of Nd 2+ spin angular momentum, thereby leading to exciton recombination at the dynamics comparable to pristine MAPbI 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2023

Long-life lithium-ion batteries realized by low-Ni, Co-free cathode chemistry

The increasing demand for lithium-ion battery-powered electric vehicles (EVs) has led to a surge in recent prices of strategic battery materials such as cobalt (Co) and nickel (Ni). While all EV makers are eager to eliminate Co usage, Ni has rapidly become another ‘pain point’ for the industry, as its price is nearing half that of Co. The sustainability issue facing both Ni and Co puts forward a grand materials challenge, that is, to reduce Ni content and eliminate Co while maintaining high specific energy and stability. Here in this work, a complex concentrated doping strategy is used to eliminate Co in a commercial NMC-532 cathode. The LiNi 0.5 Mn 0.43 Ti 0.02 Mg 0.02 Nb 0.01 Mo 0.02 O 2 cathode shows potential cost advantage with relatively high specific energy and significantly improved overall performance (~95% capacity retained after 1,000 cycles in pouch-type cells, 2.8–4.3 V vs graphite, at 1 C, 1.5 mA cm -2 ). Combining X-ray techniques and electron microscopy, we uncover the origins of the superior stability.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Tuning the Chern number in quantum anomalous Hall insulators

A quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has a quantized Hall resistance of h/(Ce 2 ) and vanishing longitudinal resistance under zero magnetic field (where h is the Planck constant, e is the elementary charge, and the Chern number C is an integer). The QAH effect has been realized in magnetic topological insulators and magic-angle twisted bilayer graphene. However, the QAH effect at zero magnetic field has so far been realized only for C = 1. Here we realize a well quantized QAH effect with tunable Chern number (up to C = 5) in multilayer structures consisting of alternating magnetic and undoped topological insulator layers, fabricated using molecular beam epitaxy. The Chern number of these QAH insulators is determined by the number of undoped topological insulator layers in the multilayer structure. Moreover, we demonstrate that the Chern number of a given multilayer structure can be tuned by varying either the magnetic doping concentration in the magnetic topological insulator layers or the thickness of the interior magnetic topological insulator layer. We develop a theoretical model to explain our experimental observations and establish phase diagrams for QAH insulators with high, tunable Chern number. Furthermore, the realization of such insulators facilitates the application of dissipationless chiral edge currents in energy-efficient electronic devices, and opens up opportunities for developing multi-channel quantum computing and higher-capacity chiral circuit interconnects.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Magnetic-field-induced Wigner crystallization of charged interlayer excitons in van der Waals heterostructures

Abstract Ever since its inception, coherent excited states of semiconductors have been the focus of semiconductor materials research to evolve into a vibrant field of low-dimensional solid-state physics. The field is gaining new momentum these days due to emerging transdimensional semiconductors such as van der Waals bound layers of transition metal dichalcogenides (TMDs) of controlled thickness. Here, we develop the theory of magnetic-field-induced Wigner crystallization for charged interlayer excitons (CIE) discovered recently in TMD heterobilayers. We derive the ratio of the potential interaction energy to the kinetic energy for the many-particle CIE system in the perpendicular magnetostatic field of an arbitrary strength and predict the crystallization effect in the strong field regime. We show that magnetic-field-induced Wigner crystallization and melting of CIEs can be observed in magneto-photoluminescence experiments with TMD bilayers of systematically varied electron-hole doping concentrations. Our results advance the capabilities of this new generation of transdimensional quantum materials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μ m epitaxial layers

Advances in the growth processes of 4H-SiC epitaxial layers have led to the continued expansion of epilayer thickness, allowing for the detection of more penetrative radioactive particles. In this work, we report the fabrication and characterization of high-resolution Schottky barrier radiation detectors on 250 μm thick n-type 4H-SiC epitaxial layers, the highest reported thickness to date. Several 8 × 8 mm 2 detectors were fabricated from a diced 100 mm diameter 4H-SiC epitaxial wafer grown on a conductive 4H-SiC substrate with a mean micropipe density of 0.11 cm -2 From the Mott–Schottky plots, the effective doping concentration was found to be in the range (0.95–1.85) × 10 14 cm -3 , implying that full depletion could be achieved at ~5.7 kV (0.5 MV/cm at the interface). The current-voltage characteristics demonstrated consistently low leakage current densities of 1–3 nA/cm 2 at a reverse bias of -800 V. This resulted in the pulse-height spectra generated using a 241Am alpha source (5486 keV) manifesting an energy resolution of less than 0.5% full width at half maximum (FWHM) for all the detectors at -200 V. The charge collection efficiencies (CCEs) were measured to be 98–99% with no discernable correlation to the energy resolution. A drift-diffusion model fit to the variation of CCE as a function of bias voltage, revealed a minority carrier diffusion length of ~10 μm. Deep level transient spectroscopy measurements on the best resolution detector revealed that the excellent performance was the result of having ultralow concentrations of the order of 1011 cm-3 lifetime limiting defects—Z 1/2 and EH 6/7 .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment

Traditional mesa terminations require precise angle design to reduce the electric field at the edge and surface treatment to reduce etch damage. Otherwise, the device usually suffers a premature breakdown. This work proposes the use of easy-to-implement hydrogen plasma treatment to solve the premature breakdown caused by mesa and demonstrates the avalanche capability in GaN-on-GaN p-i-n diodes. The breakdown electric field when the avalanche occurred was ∼2.3 MV/cm at room temperature for a GaN drift layer with a doping concentration of ∼7 × 1015 cm−3, which is consistent with the theoretical value. The temperature coefficient of the avalanche breakdown voltage of the devices was 4.64–4.85 × 10−4 K−1. This work shows a simple and effective approach to achieve avalanche capability in vertical GaN power devices, which can serve as an important reference for the future development of efficient and robust GaN power electronics.

Fu, Kai (ORCID:0000000294057512)↗
DOE OSTI2025

Model of photoemission and framework for relating quantum efficiency to stoichiometry

Simulating the quantum efficiency (QE) from photocathodes used in accelerators and photoinjectors requires accounting for the properties of the photoemissive material, the optical properties, scattering coefficients, and doping concentrations of which are dependent upon the stoichiometry. We present a rapid and flexible optical model that can be used to investigate the consequences of changes in the dielectric properties and their impact on the QE through such factors as reflectivity and laser penetration depth. Differences in materials can then be characterized by changes to parameters used to evaluate the dielectric function in a Lorentz–Drude–Resonant model. A method to characterize data is motivated by the example of copper and vetted by application to an exact analytical model. The effects of changes in parameters describing the resonant terms, which aggregate in the visible and UV regions of the spectrum, are shown.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗