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At least 91 records · Page 5

A Ba 6 Cu 31 Te 22 ( A = K, Rb, Cs) Featuring Polyanionic Copper–Telluride Frameworks with Ultralow Thermal Conductivity

In this study, hree polyanionic tellurides, ABa 6 Cu 31 Te 22 (A = K, Rb, Cs), were synthesized in salt flux. The isostructural tellurides crystallize in a new structure type, in the cubic Pa$\overline{3}$ space group with a Wyckoff sequence of d 10 c 2 b 1 and large unit cell volumes of over 5500 Å 3 . The structures feature a framework of [CuTe 4 ] tetrahedra and [CuTe 3 ] trigonal pyramids with disorder in the Cu sites. The polyanionic frameworks have large square antiprism and cuboctahedral voids where Ba and alkali metal cations are situated, forming [BaTe 8 ] and [ATe 12 ], respectively. The overall compositions are close to being charge balanced. The large [ATe 12 ] cuboctahedra allowed for significant anisotropic displacement of the A cations, as observed from both single crystal X-ray diffraction and heat capacity studies. Alkali cations rattling together with Cu atom displacement and disorder leads to the dispersion of phonons, thus softening the lattice and subsequently reducing the thermal conductivity. Evaluations of the electronic band structure revealed the occurrence of a narrow bandgap together with the presence of a flat band near the valence band maximum, giving rise to the high thermopower. The Cs and Rb analogues show a slope change in the temperature dependence of electrical resistivity around room temperature, which is typical for semimetals or degenerate semiconductors. For the as-synthesized and unoptimized materials, high values of the thermoelectric figure-of-merit of ~0.2 were observed at 623 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Quantitative Analysis of the Semiconductor–Electrolyte Interface Using Cyclic Voltammetry Measurements

Small changes in the chemical potential at a semiconductor interface can result in dramatic changes to the space-charge layer that underpins applications in the electronic and photovoltaic industries as well as in photoelectrochemical cells for fuel production. There has hence been great interest in techniques that directly probe the space-charge layer, yet many fail at the semiconductor–electrolyte interface due to the potential drop in the electric double-layer region of the electrolyte. This article demonstrates that photovoltages, obtained from straightforward cyclic voltammetry measurements, provide an experimental and quantitative approach for characterizing the semiconductor–electrolyte interface. Key parameters accessible through this approach include the flat-band potential ( E fb ), the fraction of the total potential that drops across the space-charge layer (γ sc ) and the electric double layer, as well as the surface recombination lifetime (τ s ). Here, we report photovoltage measurements for p -type Si(111) photoelectrodes in contact with electrolytes containing redox-active species with a range of known reduction potentials that exceed the 1.1 eV bandgap. In tetrabutylammonium [NBu 4 ] + electrolyte, the flat-band potential determined for hydrogen-terminated ( p -Si–H), methyl-terminated ( p -Si–CH 3 ), and chemically oxidized ( p -Si–cSiO x ) surfaces were −0.02, −0.31, and 0.30 V vs Fc +/0 , respectively, agreeing well with expected shifts arising from surface dipole modifications. The quantitative analysis also reveals that 67% of the applied bias drops across the space-charge layer for p -Si–H, 73% for p -Si–CH 3 , and only 44% for p -Si–cSiO x . The remaining potential drop is attributed to the interfacial surface layer, which consists of a molecular dipole or oxide overlayer, and the Helmholtz layer within the electrolyte. When the larger [NBu 4 ] + electrolyte was replaced with Li + , the flat-band position showed minimal changes, but the fraction of the potential drop across the space-charge layer increased significantly, consistent with the small cation altering the structure of the electric double layer.

electrolytes↗

Tailored emitter, low-resistivity, ion-implanted silicon solar cells

Open-circuit voltages as high as 0.645 V (AM0, 25 C) have been obtained by a new process developed for low-resistivity silicon. The process utilizes high-dose phosphorus implantation followed by furnace annealing and simultaneous oxide growth. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient antireflection (AR) coating. Boron-doped, float-zone silicon with resistivities from 0.1 to 1.0 (omega)(cm) has been processed according to this sequence; results show that the highest open-circuit voltage is obtained with 0.1(omega)(cm) starting material. The effects of Auger recombination and bandgap narrowing caused by high doping concentrations in the n(+)junction region have been investigated by implanting phosphorus over a wide range of dose levels. The effects of emitter-phosphorus concentrations tailored to optimize electric fields in the emitter have also been investigated.

Minnucci, J. A.↗

Systems and methods for resolving a number of incident RF-range photons

A photon-number-resolving detector comprises a detection element, an ohmmeter, and a hardware logic component. The detection element can be formed from a Weyl or Dirac semimetal. Electrons of the detection element are characterized by a surface state that exhibits a Dirac cone and a bulk superconducting state that exhibits a bandgap. When photons having energies less than the bandgap of the bulk superconducting state impinges on the detection element, the photons can be absorbed by electrons of the detection element that are characterized by the surface state. The ohmmeter outputs resistance data indicative of an electrical resistance of the detection element while the photons impinge on the detection element. The hardware logic component can determine, based upon the resistance data, a number of the photons that are absorbed by the surface state electrons of the detection element.

Soh, Daniel Beom Soo↗

Growth Phenomena and Bandgap Shift in Melt-Grown β-(In x Ga 1- x ) 2 O 3 Alloys

β-Ga 2 O 3 is an emerging ultra-wide bandgap semiconductor with great promise for power electronics and optoelectronics. Alloys in the In 2 O 3 -Ga 2 O 3 system are interesting for optoelectronic applications, particularly where bandgap tuning is desirable. Herein, β-(In x Ga 1- x ) 2 O 3 alloys with target compositions x = 0.025 or 0.10 are grown from the melt using the Czochralski and vertical gradient freeze techniques. Growth with 10 mol% In yields only small, needle-like crystals, while 2.5 mol% In allows growth of centimeter-sized single crystals. A substantial degree of indium segregation is unveiled by spatial measurements of lattice parameters and the bandgap. The bandgap decreases by a maximum of 0.28 eV in the case of the highest In content crystals. Z-contrast transmission electron microscopy confirms a solely octahedral coordination of In in the β-Ga 2 O 3 lattice. With indium concentrations higher than 2.5 mol%, samples contain micron-scale voids that impart a dark coloration. All measured crystals are electrically conductive, with carrier concentrations varying 10 16 –10 17 cm -3 depending upon the location of the sample in the growth. Lastly, a unique luminescence with unknown origin centered around 2.0 eV is revealed by photoluminescence spectroscopy.

36 MATERIALS SCIENCE↗

Epitaxial integration of superconducting nitrides with cubic GaN

Epitaxial combination of transition metal nitrides and group III-nitrides holds significant potential for novel device architectures, given their wide array of properties and similar lattice constants. However, the mixture of hexagonal and cubic crystals limits structural quality and has stymied development. This work will discuss the molecular beam epitaxy synthesis of metastable cubic GaN on 3C-SiC templates and its integration with cubic ZrN and NbN superconductors in single and multilayer heterostructures. The fully cubic nature of GaN and the epitaxial nature of all layers are confirmed via in situ and ex situ techniques. The electrical transport properties of transition metal nitrides on cubic GaN (001) are compared to those grown directly on 3C-SiC (001) and c-plane hexagonal GaN templates. The determination of a similar growth window for cubic wide-bandgap and superconducting metal nitrides creates a platform for new epitaxial device architectures and potential applications in metamaterials, quantum information science, and condensed matter physics.

Condensed matter physics↗

Common Mode Current Challenges and Opportunities in Electric Powertrain Testing

During the development of novel electric powertrain (EP) components key parameters may be evaluated by test before a fully integrated EMI design is implemented. However, insufficiently mitigated EMI could impact the test equipment and test measurements. This risk is particularly valid with high voltage wide bandgap switching converters which enable high efficiency but can increase the EMI source function producing high levels of common mode (CM) current. Test facility equipment may be susceptible to the CM current from these converters causing test delays or measurement errors. Characterization of the common mode EMI of a powertrain component by analysis and/or measurement and assessment of the test facility EMC design can reduce this risk to yield efficient tests and successful measurements.

electromagnetic interference↗

Role of the junction voltage on the overflow current in light-emitting diodes

Quantum-well (QW)-based light emitters, such as light-emitting diodes (LEDs) and lasers, of various semiconductor materials experience a reduction in their efficiency when operating at higher temperatures, a phenomenon referred to as “thermal droop.” Among the various claims on the origins of thermal droop, an increased overflow current with increasing temperatures is a common contender. Since overflow of carriers can only occur when the junction voltage 𝑉 Junction approaches the built-in voltage 𝑉 BI of any diodes, we develop a simple method relating the difference between 𝑉 Junction and 𝑉 BI to approximate the upper limit of overflow occurring in QW-based light-emitting diodes. The measured difference between 𝑉 Junction and 𝑉 BI of state-of-the-art commercial blue and green In⁢Ga⁢N-based LEDs at temperatures up to ∼450 K suggests negligible overflow. To further experimentally verify the absence of overflow, we perform temperature-dependent electron emission spectroscopy on the same commercial blue and green LEDs and find no evidence of thermally enhanced overflow carriers up to ∼450 K. In agreement with our claims that 𝑉 Junction must approach 𝑉 BI for overflow to occur, two-dimensional temperature-dependent electrical simulations of violet, blue, and green LEDs including alloy disorder and V-defects demonstrate that overflow can be significant in violet LEDs, where the small band offset between the In⁢Ga⁢N QW and Ga⁢N cladding layers due to the larger QW bandgap requires larger 𝑉 Junction to reach standard operating current densities, thereby approaching 𝑉 BI . By contrast, simulations indicate that overflow is negligible in blue and green LEDs, whose smaller QW bandgaps result in smaller quasi-Fermi levels difference to reach significant carrier injection, resulting in a 𝑉 Junction much smaller than 𝑉 BI up to large operating current densities. Considering that overflow is negligible in blue and longer-wavelength LEDs, and our observations of the large thermal droop occurring at low current densities, where Shockley-Read-Hall (SRH) recombination dominates, we conclude that thermally enhanced SRH processes are the most significant contributor to thermal droop. Finally, we also simulate the carrier densities in the different QWs of a multiple-QW LED and observe a reduction in the total carrier density at a given operating current density, which results in a decrease in the total Auger-Meitner current of the LED from just the thermally enhanced carrier redistribution among QWs without taking any possible additional temperature dependence of their recombination coefficients. Taking all this into account, minimizing thermal droop effects in LEDs can be achieved by a reduction in defect density, using wider band gap p-n junction-defining cladding layers, and operating at higher currents.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Fabrication of AlGaAs/GaAs cascade solar cell by LPE

Stacking two or more photovoltaic junctions in electrical and optical series results in higher conversion efficiency since each junction can be tailored to respond more efficiently to a smaller range of photon energies. An efficiency of about 30 percent was predicted for a two junction cascade cell having the optimum bandgap values. A number of III-V materials systems were considered for use in fabricating cascade solar cells. The Al-Ga-As system is attractive from a developmental standpoint since it employs a proven materials system that is closely lattice matched throughout its compositional range. This system employs a GaAs low bandgap cell and 1.9 eV AlGaAs high bandgap cell connected by an AlGaAs tunnel junction. Although this cell does not possess the optimum bandgap values, an efficiency of 25 percent was predicted at 300 K under AMO, 1 sun illumination.

Bedair, S. M.↗

Plasmon and Photon Excitations in Two-Dimensional and Layered Materials

Light-matter interactions in layered and two-dimensional materials allows one to achieve extreme optical confinement approaching the atomic scale, enabling exploration of new materials phenomena. Layered narrow bandgap and zero bandgap materials, such as black phosphorus and graphene, support unusual and intriguing quantum-confined electronic states in thin layers and surface electronic states. The incomplete screening of applied electrostatic fields in ultrathin materials permits the exploration of light-matter interactions at high electric fields and over a wide range of carrier densities in a single sample, facilitating exploration of the optical and plasmonic properties of ultrathin and layered materials under electrochemical potential control. We have made advances in understanding the nature of optical interband and intraband plasmon excitations in layered materials such as graphene, black phosphorus, molybdenum diselenide, and molybdenum ditelluride.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Multibandgap photovoltaic receiver using back surface reflectors

Requirements for prime power generation from solar arrays are expected to increase for the next generation of spacecraft power systems. An enhancement of the efficiency of the conversion of incident sunlight to electricity would have a number of advantages, provided the cost involved in achieving this enhancement would not be too great. Solar input response can be improved by splitting the solar spectrum into component wavelength bands and directing these bands to solar cells of different bandgaps. Two approaches have been proposed for achieving spectrum splitting photovoltaics. One approach involves multiple-cell systems using dichroic mirrors, while the other employs monolithic multibandgap solar cells. The present investigation is concerned with a procedure which has the advantages of both approaches, while avoiding many of the drawbacks of each.

Stern, T. G.↗

Development of N/P AlGaAs free-standing top solar cells for tandem applications

The combination of a free standing AlGaAs top solar cell and an existing bottom solar cell is the highest performance, lowest risk approach to implementing the tandem cell concept. The solar cell consists of an AlGaAs substrate layer, an AlGaAs base layer, an AlGaAs emitter, and an ultra-thin AlGaAs window layer. The window layer is compositionally graded which minimizes reflection at the window layer/emitter interface and creates a built-in electric field to improve quantum response in the blue region of the spectrum. Liquid phase epitaxy (LPE) is the only viable method to produce this free standing top solar cell. Small (0.125 sq cm), transparent p/n AlGaAs top solar cells were demonstrated with optimum bandgap for combination with a silicon bottom solar cell. The efficiency of an AlGaAs/Si stack using the free standing AlGaAs device upon an existing silicon bottom solar cell is 24 pct. (1X, Air Mass Zero (AM0). The n/p AlGaAs top solar cell is being developed in order to facilitate the wiring configuration. The two terminal tandem stack will retain fit, form, and function of existing silicon solar cells. Progress in the development of large area (8 and 16 sq cm), free standing AlGaAs top solar cells is discussed.

Negley, Gerald H.↗

Semiconductor ohmic contact

A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material, preferably a group III-V semiconductor material, having a narrower energy bandgap. The degenerate region is doped with tin to increase the crystal lattice of the region to more closely approximate the crystal lattice of the one surface of the semiconductor device. The degenerate region is compensatingly doped with a P type conductivity modifier. An electrical contact is applied to one surface of the degenerate region forming an ohmic contact with the semiconductor device.

Hawrylo, Frank Zygmunt↗

Exploring transport mechanisms in atomic precision advanced manufacturing enabled pn junctions

We investigate the different transport mechanisms that can occur in pn junction devices made using atomic precision advanced manufacturing at temperatures ranging from cryogenic to room temperature. We first elucidate the potential cause of the anomalous behavior observed in the forward-bias response of these devices in recent cryogenic temperature measurements, which deviates from the theoretical response of a silicon Esaki diode. These anomalous behaviors include current suppression at low voltages in the forward-bias response and a much lower valley voltage at cryogenic temperatures than theoretically expected for a silicon diode. To investigate the potential causes of these anomalies, we studied the effects of a few possible transport mechanisms, including band-to-band tunneling, bandgap narrowing, potential impact of non-Ohmic contacts, band quantization, impact of leakage, and inelastic trap-assisted tunneling, through semi-classical simulations. We find that a combination of two sets of band-to-band tunneling (BTBT) parameters can qualitatively approximate the shape of the tunneling current at low bias. This can arise from band quantization and realignment due to the strong potential confinement in δ-layers. We also find that the lower-than-theoretically-expected valley voltage can be attributed to modifications in the electronic band structure within the δ-layer regions, leading to a significant bandgap narrowing induced by the high density of dopants. Finally, we extend our analyses to room temperature operation and predict that trap-assisted tunneling (TAT) facilitated by phonon interactions may become significant, leading to a complex superposition of BTBT and TAT transport mechanisms in the electrical measurements.

band gap↗

Virtual Substrates for Wide Bandgap AlyX1-yN Growth

Lattice-matched substrates are critical for growth of high quality, compositionally-targeted ternary AlyX1-yN compounds with properties suitable for a wide variety of next-generation opto- and power electronic applications. [DOI:10.1149/2.0111702jss] We have identified the (111) plane of transition metal carbides and nitrides as lattice matched "virtual" substrate layers that have additional benefits of electrical conductivity and appropriate coefficients of thermal expansion for nitride layer at both growth and operating temperatures. [arXiv:2208.11769 2022] In this work, (111)-oriented TaC and ZrN are grown by RF sputtering and optimized as substrate layers for AlyGa1-yN and AlyGd1-yN, respectively. TaC is demonstrated as a full proof of concept. (111)-stabilized TaC layers with a rock-salt crystal structure are annealed to improve surface crystal quality and surface morphology and then used as a template for growth of an Al0.7Ga0.3N layer by molecular beam epitaxy. X-ray diffraction (XRD) demonstrates epitaxial registry of the grown layer to the substrate. High resolution transmission electron microscopy (TEM) is used to investigate interface behavior, showing regions of abrupt interface transitions and nitrogen polar termination of the Al0.7Ga0.3N. We also grew (111)-oriented ZrN on Ti-Zr-N graded buffer layers as a lattice-matched virtual substrate for AlyGd1-yN. Structure, morphology, and strain are analyzed using XRD and atomic force microscopy. Structure and quality of initial Al0.8Gd0.2N thin films are investigated for both in-situ and ex-situ growths.

AlyX1-yN↗

Electroactive ZnO: Mechanisms, Conductivity, and Advances in Zn Alkaline Battery Cycling

Zinc oxide is of great interest for advanced energy devices because of its low cost, wide direct bandgap, non-toxicity, and facile electrochemistry. In zinc alkaline batteries, ZnO plays a critical role in electrode passivation, a process that hinders commercialization and remains poorly understood. Here, novel observations of an electroactive type of ZnO formed in Zn-metal alkaline electrodes are disclosed. The electrical conductivity of battery-formed ZnO is measured and found to vary by factors of up to 104, which provides a first-principles-based understanding of Zn passivation in industrial alkaline batteries. Simultaneous with this conductivity change, protons are inserted into the crystal structure and electrons are inserted into the conduction band in quantities up to ≈1020 cm−3 and ≈1 mAh gZnO−1. Electron insertion causes blue electrochromic coloration with efficiencies and rates competitive with leading electrochromic materials. The electroactivity of ZnO is evidently enabled by rapid crystal growth, which forms defects that complex with inserted cations, charge-balanced by the increase of conduction band electrons. This property distinguishes electroactive ZnO from inactive classical ZnO. Knowledge of this phenomenon is applied to improve cycling performance of industrial-design electrodes at 50% zinc utilization and the authors propose other uses for ZnO such as electrochromic devices.

Brendan E. Hawkins↗

Optimization, Design, and Demonstration of 1 kW Stirling Controller Using Capacitor-based Power Factor Correction

Free-piston Stirling convertors provide efficient, reliable thermal to electric power conversion, provided they are paired with a reliable controller. This paper outlines work underway on design concepts for kilowatt-class controllers. Using passive power factor correction (PFC) this design explores the possibility of reducing programmatic risk through system simplification. Efficiency is maximized through incorporating wide-bandgap gallium nitride (GaN) switches, and passive PFC volume is minimized through the use of polymer multi-layer capacitors. This work is aimed at exploring new approaches for future Stirling controllers.

Christopher Barth↗

Performance of Heterostructural TaC/AlGaN Schottky Diodes Based on First Principles Electronic Structure Properties

Advances in ultra-wide bandgap materials, such as high Al-content AlxGa1-xN (AlGaN), are essential for next generation power electronics, but the requirement for lattice matched substrates is currently a significant obstacle. Recently, conductive TaC has emerged as a promising virtual substrate for AlGaN heteroepitaxy, with wurtzite (0001) AlxGa1-xN lattice-matched to rocksalt (111) TaC at x ~ 0.5. Thus, understanding and controlling the electronic properties of the TaC/AlGaN interface is key for developing technological applications based on TaC/AlGaN devices. Using density functional theory and electronic structure calculations, we here investigate TaC/Al0.5Ga0.5N interfaces, where we include explicit alloy models in the slab calculations. We predict the Schottky barrier height and the electric field discontinuity resulting from interface charges. Considering all possible combinations of (Ta, C) substrate termination, (Al/Ga, N) nucleation, and (Al/Ga, N) polarity, we construct a chemical potential phase diagram to identify the stable interfaces that can be accessed through variation of the synthesis conditions. The predicted interface electronic properties are implemented in device performance simulations to demonstrate a practical design for a strain-free, high-efficiency TaC/AlGaN Schottky diode with a low barrier height and without interface charges, underscoring the potential of TaC as a substrate for ultra-wide bandgap devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗