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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5

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NASA NTRS2002

Ion Dynamic Capture Experiments With The High Performance Antiproton Trap (HiPAT)

To take the first step towards using the energy produced from the matter-antimatter annihilation for propulsion applications, the NASA Marshall Space Flight Center (MSFC) Propulsion Research Center (PRC) has initiated a research activity examining the storage of low energy antiprotons. The High Performance Antiproton Trap (HiPAT) is an electromagnetic system (Penning-Malmberg design) consisting of a 4 Tesla superconductor, a high voltage electrode confinement system, and an ultra high vacuum test section. It has been designed with an ultimate goal of maintaining 10(exp 12) charged particles with a half-life of 18 days. Currently, this system is being evaluated experimentally using normal matter ions that are cheap to produce, relatively easy to handle, and provide a good indication of overall trap behavior (with the exception of assessing annihilation losses). The ions are produced via a positive hydrogen ion source and transported to HiPAT in a beam line equipped with electrostatic optics. The optics serve to both focus and gate the incoming ions, providing microsecond-timed beam pulses that are dynamically captured by cycling the HiPAT forward containment field like a "trap door". Initial dynamic capture experiments have been successfully performed with beam energy and currents set to 1.9 kV and 23 micro-amps, respectively. At these settings up to 2x10(exp 9) ions have been trapped during a single dynamic cycle.

Martin, James↗

DOE OSTI2024

Study of graphene p-n junctions formed by the electrostatic modification of the SiO2 substrate

Abstract We study the transport properties of mm-scale CVD graphene p-n junctions, which are formed in a single gated graphene field effect transistor configuration. Here, an electrical-stressing-voltage technique served to modify the electrostatic potential in the SiO 2 /Si substrate and create the p-n junction. We examine the transport characteristics about the Dirac points that are localized in the perturbed and unperturbed regions in the graphene channel and note the quantitative differences in the Hall effect between the perturbed and unperturbed regions. The results also show that the longitudinal resistance is highly sensitive to the external magnetic field when the Hall bar device operates as a p-n junction.

Science & Technology - Other Topics↗

DOE OSTI2023

Spin dynamics in quantum dots on liquid helium

Liquid He-4 is free from magnetic defects, making it an ideal substrate for electrons with long-lived spin states. Such states can serve as qubit states. Here, in this study, we consider the spin states of electrons electrostatically localized in quantum dots on a helium surface. Efficient gate operations in this system require spin-orbit coupling. It can be created by a nonuniform magnetic field from a current-carrying wire, can be turned on and off, and allows one to obtain large electrodipole moment and comparatively fast coupling of spins in neighboring dots. Of central importance is to understand spin decay due to the spin-orbit coupling. We establish the leading mechanism of such decay and show that the decay is sufficiently slow to enable high-fidelity single- and two-qubit gate operations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2021

Integration of high permittivity BaTiO 3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

In this Letter, we discuss AlGaN/GaN HEMTs integrated with high permittivity BaTiO 3 dielectric to enable enhanced breakdown characteristics. We show that using high permittivity BaTiO 3 dielectric layers in the gate and drain access regions prevents premature gate breakdown, leading to average breakdown fields exceeding 3 MV/cm at a gate-to-drain spacing of 4 μm. The higher breakdown fields enable a high power figure of merit above 2.4 GW/cm 2 in devices with a gate-to-drain spacing of 6 μm. This work demonstrates that electrostatic engineering using high-permittivity dielectrics can enable AlGaN/GaN HEMTs in approaching the material breakdown field limits.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2020

Electrically controlled two-dimensional electron-hole fluids

We study the electronic properties of dual-gated electron-hole bilayers in which the two layers are separated by a perfectly opaque tunnel barrier. Combining an electrostatic and thermodynamic analysis with mean-field theory estimates of interacting system chemical potentials, we explain the dependence of the electron and hole densities on the two gate voltages. Because chemical potential jumps occur for both electrons and holes at neutrality, there is a finite area in gate voltage parameter space over which electron and hole densities are equal. In that regime the electron-hole pair density depends only on the sum of the two gate voltages. As a result, we are able to explain a recent experimental study of electrically controlled bilayers by allowing for interlayer tunneling and using a nonequilibrium steady-state transport picture.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

Synthetic Band Structure Engineering of Graphene Using Block Copolymer-Templated Dielectric Superlattices

Engineering the electronic band structure of two-dimensional (2D) materials by imposing spatially periodic superlattice (SL) potentials opens a pathway to unconventional electronics. Nanopatterning the gate electrode or surface dielectric near 2D crystals provides a powerful strategy for realizing electrostatically tunable “remote” SLs with flexibility in lattice design. Here, we demonstrate the effectiveness of block copolymer (BCP)-templated dielectric nanopatterns for fabricating etch-free high-grade metal oxide SLs. Alumina (AlO x ) nanopatterns with hexagonal symmetry and a 38 nm SL wavelength are produced as a model material by directly converting a self-assembled BCP film via block-selective vapor phase infiltration. Despite micrometer-scale rotational disorder inherent to BCP self-assembly, electronic transport measurements of graphene reveal replica Dirac points at zero field and Hofstadter mini-gaps under finite magnetic fields. These results indicate the successful formation of remote SL potentials in graphene resulting from optimized AlO x nanopattern fabrication to achieve consistent lattice symmetry and periodicity at a macroscopic scale. The findings of this study, combined with the versatile, scalable, and cost-effective nature of BCP nanopatterning, highlight the potential of BCP-templated nanostructures for remote SL engineering in 2D crystals.

36 MATERIALS SCIENCE↗

NASA NTRSDate not supplied

DC Modeling of 4H-SiC nJFET Gate Length Reduction at 500°C

The development of robust, high-performance integrated circuits (ICs) will enable numerous potential NASA missions of current interest, including long-duration robotic missions exploring the 460°C surface of Venus. Currently, NASA is looking towards SiC-based devices to provide such a solution. However, the current NASA silicon carbide (SiC) JFET device with a channel length of 6 μm (recently fabricated Gen. 11 ICs) limits mission-relevant circuit capabilities. In this study, we combined experiments with simulations to explore two straightforward fabrication strategies (shallow n− and deep n+) to reduce the SiC JFET channel length while maintaining turn-off behavior needed to realize 500 °C circuit operation. First, the material properties for 4H-SiC were implemented in COMSOL and the Poisson equation was solved for twelve 2D device designs. Then, based on the insights gained from the distribution of the electron concentration, electrostatic potential, and electric field for twelve designs (with three fabrication strategies), simulation for a 1 μm gate length nJFET with the turn-off performance comparable to the state-of-the-art.

4H-SiC nJFET↗

NASA NTRSDate not supplied

DC Modeling of 4H-SiC nJFET Gate Length Reduction at 500°C

4H-SiC nJFET↗

DOE OSTI2022

Ionic Liquid Gating of SrTiO 3 Lamellas Fabricated with a Focused Ion Beam

Here, in this work, we combine two previously incompatible techniques for defining electronic devices: shaping three-dimensional crystals by focused ion beam (FIB), and two-dimensional electrostatic accumulation of charge carriers. The principal challenge for this integration is nanometer-scale surface damage inherent to any FIB-based fabrication. We address this by using a sacrificial protective layer to preserve a selected pristine surface. The test case presented here is accumulation of 2D carriers by ionic liquid gating at the surface of a micron-scale SrTiO 3 lamella. Preservation of surface quality is reflected in superconductivity of the accumulated carriers. This technique opens new avenues for realizing electrostatic charge tuning in materials that are not available as large or exfoliatable single crystals, and for patterning the geometry of the accumulated carriers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

NASA NTRS2000

Quantitative analysis of charge injection and discharging of Si nanocrystals and arrays by electrostatic force microscopy

NASA requirements for computing and memory for microspacecraft emphasizes high density, low power, small size, and radiation hardness. The distributed nature of a storage elements in nanocrystal floating-gate memories leads to instrinsic fault tolerance and radiation-hardness. Nanocrystal-based memories also offer the possibility of a faster, lower power operation.

atomic↗

DOE OSTI2024

Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures

Abstract The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as an active component in spintronics devices. The electrostatic control of this spin polarization in graphene has however never been demonstrated so far. We show that interfacing graphene with the van der Waals antiferromagnet CrSBr results in an unconventional manifestation of the quantum Hall effect, which can be attributed to the presence of counterflowing spin-polarized edge channels originating from the spin-dependent exchange shift in graphene. We extract an exchange shift ranging from 27 – 32 meV, and show that it also produces an electrostatically tunable spin polarization of the electron/hole carriers in graphene ranging from − 50% to + 69% in the absence of a magnetic field. This proof of principle provides a starting point for the use of graphene as an electrostatically tunable source of spin current and could allow this system to generate a large magnetoresistance in gate tunable spin valve devices.

Science & Technology - Other Topics↗

DOE OSTI2021

A graphene edge-mediated quantum gate

We propose a quantum gate architecture that allows for the systematic control of the effective exchange interactions between magnetic impurities embedded in nanoscale graphene flakes connected by a gated bridge. The entanglement between the magnetic moment and the edge states of the fragments is used to electrostatically tune the exchange interaction from ferro to antiferromagnetic by merely changing the bridge's carrier density. By characterizing the effects of size and coupling parameters, we explore different operation regimes of this device by means of exact calculations with the density matrix renormalization group. We analyze the results utilizing a simplified model that accounts for the main many-body mechanisms. Finally, we discuss how to use arrays of these devices to build quantum simulators for quantum many-body Hamiltonians.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2021

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy-efficient information processing of the brain. While non-volatile memory (NVM) based on resistive switches, phase-change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi-terminal device concepts are required for more sophisticated bio-realistic functions. Of particular interest are memtransistors based on low-dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi-terminal NVM devices including dual-gated floating-gate memories, dual-gated ferroelectric transistors, and dual-gated van der Waals heterojunctions. Further, the different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase-changes properties of nanomaterials. Finally, strategies for achieving wafer-scale integration of memtransistors and multi-terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Electromechanics of lipid-modulated gating of potassium channels

Experimental studies reveal that the anionic lipid phosphatidic acid (POPA), non-phospholipid cholesterol, and cationic lipid DOTAP inhibit the gating of voltage-sensitive potassium (Kv) channels. In this work, we develop a continuum electromechanical model to investigate the interaction of these lipids with the ion channel. Our model suggests that: (i) POPA lipids may restrict the vertical motion of the voltage-sensor domain through direct electrostatic interactions; (ii) cholesterol may oppose the radial motion of the pore domain of the channel by increasing the mechanical rigidity of the membrane; and (iii) DOTAP can reduce the effect of electrostatic forces by regulating the dielectric constant at the channel–lipid interface. The electromechanical model predictions for the three lipid types match well with the experimental observations and provide mechanistic insights into lipid-dependent gating of Kv channels.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS2000

Quantitative Analysis of Charge Injection and Discharging of Si Nanocrystals and Arrays by Electrostatic Force Microscopy

NASA requirements for computing and memory for microspacecraft emphasize high density, low power, small size, and radiation hardness. The distributed nature of storage elements in nanocrystal floating-gate memories leads to intrinsic fault tolerance and radiation hardness. Conventional floating-gate non-volatile memories are more susceptible to radiation damage. Nanocrystal-based memories also offer the possibility of faster, lower power operation. In the pursuit of filling these requirements, the following tasks have been accomplished: (1) Si nanocrystal charging has been accomplished with conducting-tip AFM; (2) Both individual nanocrystals on an oxide surface and nanocrystals formed by implantation have been charged; (3) Discharging is consistent with tunneling through a field-lowered oxide barrier; (4) Modeling of the response of the AFM to trapped charge has allowed estimation of the quantity of trapped charge; and (5) Initial attempts to fabricate competitive nanocrystal non-volatile memories have been extremely successful.

Bell, L. D.↗

NASA NTRS1972

Gate protective device for SOS array

Protective gate device consisting of alternating heavily doped n(+) and p(+) diffusions eliminates breakdown voltages in silicon oxide on sapphire arrays caused by electrostatic discharge from person or equipment. Diffusions are easily produced during normal double epitaxial processing. Devices with nine layers had 27-volt breakdown.

Meyer, J. E., Jr.↗

NASA NTRS1977

Electrostatic analysis of charge-coupled structures

Package of three computer programs performs two-dimensional electrostatic analysis to determine efficiency of charge transfer. One program can be used to analyze three-electrode charge-coupled device input/output gates, and other two programs can be used to analyze two-phase structures containing two or four electrodes with periodic boundary conditions.

Gassaway, J. D.↗

DOE OSTI2024

Quantum control of exciton wave functions in 2D semiconductors

Excitons—bound electron-hole pairs—play a central role in light-matter interaction phenomena and are crucial for wide-ranging applications from light harvesting and generation to quantum information processing. A long-standing challenge in solid-state optics has been to achieve precise and scalable control over excitonic motion. We present a technique using nanostructured gate electrodes to create tailored potential landscapes for excitons in 2D semiconductors, enabling in situ wave function shaping at the nanoscale. Our approach forms electrostatic traps for excitons in various geometries, such as quantum dots, rings, and arrays thereof. We show independent spectral tuning of spatially separated quantum dots, achieving degeneracy despite material disorder. Owing to the strong light-matter coupling of excitons in 2D semiconductors, we observe unambiguous signatures of confined exciton wave functions in optical reflection and photoluminescence measurements. This work unlocks possibilities for engineering exciton dynamics and interactions at the nanometer scale, with implications for optoelectronic devices, topological photonics, and quantum nonlinear optics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗