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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS1975

Applied research on 2-6 compound materials for heterojunction solar cells

Several II-VI heterojunctions show promise for photovoltaic conversion of solar energy. The three of greatest interest are p-CdTe/n-CdS, p-CdTe/n-ZnSe, and p-ZnTe/n-CdSe. Several p-CdTe/n-CdS heterojunction cells have been prepared by close spaced transport deposition of p-CdTe on single crystal n-CdS, and by two source vacuum evaporation of n-CdS on single crystal p-CdTe. Both types of cells, in an experimental stage, are quite comparable, exhibiting values of quantum efficiency between 0.5 and 0.9, open circuit voltages between 0.50 and 0.66 V, fill factors between 0.4 and 0.6, and solar efficiencies up to 4 percent. Cells of p-ZnTe/n-CdSe have also been made by close spaced vapor transport deposition of n-CdSe on single crystal p-ZnTe.

Bube, R. H.↗
NASA NTRS1975

Development of a high efficiency thin silicon solar cell

Variations in temperatures used in experimental processing and their effect on the resulting solar cell performance parameters were investigated. Diffusion temperature variation results in a fairly distinct optimum cell performance for diffusion temperatures in the immediate vicinity of 850 C. An additional effort was also devoted to redesign of the matallization gridline pattern for both minimum light blockage and minimum fill factor alteration due to series resistance. Efforts on improvement of tantalum oxide antireflection coatings were undertaken. Fifty 2 cm x 2 cm cells having a range of thicknesses have been submitted as the first sample group. These cells were processed under conditions tentatively identified during this first contractual quarter's experiments as being optimal for resulting cell performance.

Lindmayer, J.↗
NASA NTRS1976

Development of a high efficiency thin silicon solar cell

One hundred thin (120 microns to 260 microns) silicon-aluminum solar cells were fabricated and tested. Silicon slices were prepared, into which an aluminum alloy was evaporated over a range of temperatures and times. Antireflection coatings of tantalum oxide were applied to the cells. Reflectance of the silicon-aluminum interfaces was correlated to alloy temperature (graphs are shown). Optical measurements of the rear surface-internal reflectance of the cells were performed using a Beckman spectrophotometer. An improved gridline pattern was evaluated and stability tests (thermal cycling tests) were performed. Results show that: (1) a high-index, high-transmittance antireflection coating was obtained; (2) the improved metallization of the cells gave a 60 percent rear surface-internal reflectance, and the cells displayed excellent fill factors and blue response of the spectrum; (3) an improved gridline pattern (5 micron linewidths compared to 13 micron linewidths) resulted in a 1.3 percent improvement in short circuit currents; and (4) the stability tests showed no change in cell properties.

Lindmayer, J.↗
NASA NTRS1975

The spectral energy distribution of NGC 1275

An analysis of absolute spectral energy distributions for NGC 1275 (Per A) covering the wavelength interval from 3300 A to 10,800 A is presented. The data are consistent with the heavy reddening discovered by Wampler (1971). The H-alpha intensity varied by less than 10% between the times of Wampler's earlier measurements and the two occasions of the present observations. The line-emitting region has a characteristic density of about 10 to the 4.5 power per cu cm, a mass of about 10 to the 5.5 power solar masses, and a volume filling factor of about 10 to the -6th power. The gas may be ionized by shock waves or by nonthermal or stellar radiation. It is suggested, in the vein of Minkowski's (1957) original proposal, that the high-velocity emission-line knots described by Minkowski are H II regions in a Perseus-cluster galaxy or intergalactic gas cloud seen in projection against NGC 1275.

Shields, G. A.↗
NASA NTRS1976

Epitaxial silicon solar cells

P+/p/n/n+ epitaxial silicon solar-cell structures were fabricated with the n-base region intentionally graded over 2 orders of magnitude in a thickness of 35 microns. Solar cells made from these layers exhibited near-ideal I-V characteristics in the practical operating range, with an open-circuit voltage of 636 mV, fill factor of 0.79, and AM1 efficiency of 12.6%. A similar epitaxial structure containing no gradient in the n-base showed good solar-cell performance but lower open-circuit voltage (603 mV).

Daiello, R. V.↗
NASA NTRS1977

Observations of O VI

A useful spectroscopic tracer for a hot phase of interstellar gas is the O VI ion, which reaches its maximum concentration in collisional ionization between 100,000 and 1 million K. Presently, over 70 stars have been observed for O VI absorption by the Copernicus satellite. Nearly all of the stars show broad weak lines, but no evidence favoring a circumstellar origin for the gas can be found. An overall average for the electron density of the hot gas in the galactic plane is of the order of 0.001 per cu cm. The relative volume in space occupied by the hot-gas regions (and hence their internal density) is uncertain, but a filling factor in the range from 0.02 to 0.2 seems most plausible. Fluctuations in radial velocities and column densities suggest there are roughly 6 regions per kpc, each with an O VI column density of approximately 10 trillion per sq cm. The observed rms dispersion of radial velocities for these regions is 26 km/s.

Jenkins, E. B.↗
NASA NTRS1978

The velocity dispersion in Saturn's rings

The collisional dynamics of a differentially rotating disk of particles are considered. The investigation is to some extent an analytic counterpart of the numerical studies of Brahic (1977). Following Brahic, it is assumed that the particles are identical, indestructible, imperfectly elastic, smooth spheres. Gravitational interactions between the particles are neglected. The main result of the reported analysis is the derivation of the relation between the coefficient of restitution and the optical depth for a differentially rotating disk of identical, inelastic, smooth spheres. Questions concerning the applicability of the obtained results to Saturn's rings are studied. It is felt that the calculations should give accurate quantitative results if the rings' filling factor is small. If this assumption is not justified, the calculations should be at least qualitatively correct.

Goldreich, P.↗
NASA NTRS1977

Epitaxial solar-cell fabrication, phase 2

Dichlorosilane (SiH2Cl2) was used as the silicon source material in all of the epitaxial growths. Both n/p/p(+) and p/n/n(+) structures were studied. Correlations were made between the measured profiles and the solar cell parameters, especially cell open-circuit voltage. It was found that in order to obtain consistently high open-circuit voltage, the epitaxial techniques used to grow the surface layer must be altered to obtain very abrupt doping profiles in the vicinity of the junction. With these techniques, it was possible to grow reproducibly both p/n/n(+) and n/p/p(+) solar cell structures having open-circuit voltages in the 610- to 630-mV range, with fill-factors in excess of 0.80 and AM-1 efficiencies of about 13%. Combinations and comparisons of epitaxial and diffused surface layers were also made. Using such surface layers, we found that the blue response of epitaxial cells could be improved, resulting in AM-1 short-circuit current densities of about 30 mA/cm sq. The best cells fabricated in this manner had AM-1 efficiency of 14.1%.

Daiello, R. V.↗
NASA NTRS1979

Automated Array Assembly, Phase 2

The solar cell module process development activities in the areas of surface preparation are presented. The process step development was carried out on texture etching including the evolution of a conceptual process model for the texturing process; plasma etching; and diffusion studies that focused on doped polymer diffusion sources. Cell processing was carried out to test process steps and a simplified diode solar cell process was developed. Cell processing was also run to fabricate square cells to populate sample minimodules. Module fabrication featured the demonstration of a porcelainized steel glass structure that should exceed the 20 year life goal of the low cost silicon array program. High efficiency cell development was carried out in the development of the tandem junction cell and a modification of the TJC called the front surface field cell. Cell efficiencies in excess of 16 percent at AM1 have been attained with only modest fill factors. The transistor-like model was proposed that fits the cell performance and provides a guideline for future improvements in cell performance.

Carbajal, B. G.↗
NASA NTRS1979

High Efficiency Cell Development

The specific activity was to improve the tandem junction Cell (TJC) as a high efficiency solar cell. The TJC development was to be consistent with module assembly and should contribute to the overall goals of the Low-Cost Solar Array Project. During 1978, TJC efficiency improved from approximately 11 percent to approximately 16 percent (AMI). Photogenerated current densities in excess of 42 mA/sq cm were observed at AMO. Open circuit voltages as high as 0.615 V were measured at AMO. Fill factor was only 0.68 - 0.75 due to a nonoptimum metal contact design. A device model was conceived in which the solar cell is modelled as a transitor. There are virtually no interconnect or packaging factor systems and the TJC is compatible with all conventional module fabrication systems. A modification of the TJC, the Front Surface Field (FSF) cell, was also explored.

Carbajal, B. G.↗
NASA NTRS1979

High-efficiency thin-film GaAs solar cells

GaAs chemical vapor deposition (CVD) growth on single-crystal GaAs substrates was investigated over a temperature range of 600 to 750 C, As/GA mole-ratio range of 3 to 11, and gas molefraction range 5 x 10 to the minus 9th power to 7x 10 to the minus 7th power for H2S doping. GasAs CVD growth on recrystallized Ge films was investigated for a temperature range of 550 to 700 C, an As/GA mole ratio of 5, and for various H2S mole fraction. The highest efficiency cell observed on these films with 2 mm dots was 4.8% (8% when AR-coated). Improvements in fill factor and opencircuit voltage by about 40% each are required in order to obtain efficiencies of 15% or greater.

Stirn, R. J.↗
NASA NTRS1979

Silicon Solar Cell Process Development, Fabrication and Analysis

The standard solar cells (2x2 cm) from the cast silicon (HEM) showed a maximum AMO efficiency of 10.1%. Cells from the low resistivity material (0.5 ohm-cm) showed lower performance than those of the high resistivity cast silicon (3 ohm-cm), an average efficiency 9.5% versus 7.6%. Maximum AMO efficiency of the standard solar cells from the EFG (RH) ribbons was about 7.5%. The solar cells from the controlled SiC, using the displaced die, showed more consistent and better performance than those of the uncontrolled SiC ribbons, an average efficiency of 6.6% versus 5.4%. The average AMO efficiency of the standard SOC solar cells were about 6%. These were large area solar cells (an average area of 15 sq cm). A maximum efficiency of 7.3% was obtained. The SOC solar cells showed both leakage and series resistance problems, leading to an average curve fill factor of about 60%.

Yoo, H. I.↗
NASA NTRS1979

Silicon Solar Cell Process Development, Fabrication and Analysis

The standard solar cells (2x2 cm) from the cast silicon heatexchanger method) showed a maximum AMO efficiency of 10.1%. Cells from low resistivity material (0.5 ohm-cm) showed lower performance than those of the high resistivity cast silicon (3 ohm-cm), an average efficiency 9.5% versus 7.6% Maximum AMO efficiency of the standard solar cells (2x2 cm) from the EFG (RH) ribbons was about 7.5%. The solar cells from controlled SiC, using the displaced die, showed more consistent and better performance than those of the uncontrolled SiC ribbons, an average efficiency of 6.6% versus 5.4% The average AMO efficiency of the standard silicon ceramic (soc) solar calls were about 6%. These were large area solar cells (an average area of 15 sq cm). A maximum efficiency of 7.3% was obtained. The SOC solar cells showed both leakage and series resistance problems, leading to an average curve fill factor of about 60%.

Yoo, H. I.↗
NASA NTRS1979

Development of Low Cost Contacts to Silicon Solar Cells

Different electroless plating systems were evaluated in conjunction with copper electroplating. All tests involved simultaneous deposition of front and back contacts using a standard cell materials. Cells with good adhesion and good curve fill factors were obtained using a palladium-chromium-copper metallization system. The final copper contact system was evaluated to determine if the copper would migrate at elevated temperatures. The copper migrated at elevated temperatures causing cell output degradation.

Iles, P. A.↗
NASA NTRS1979

Radiation effects in GaAs AMOS solar cells

The results of radiation damage produced in AMOS (Antireflecting-Metal-Oxide-Semiconductor) cells with Sb2O3 interfacial oxide layers by 1-MeV electrons are presented. The degradation properties of the cells as a function of irradiation fluences were correlated with the changes in their spectral response, C-V, dark forward, and light I-V characteristics. The active n-type GaAs layers were grown by the OM-CVD technique, using sulfur doping in the range between 3 x 10 to the 15th power and 7 x 10 to the 16th power/cu cm. At a fluence of 10 to the 16th power e/sq cm, the low-doped samples showed I sub sc degradation of 8% and V sub oc degradation of 8%. The high-doped samples showed I sub sc and V sub oc degradation of 32% and 1%, respectively, while the fill factor remained relatively unchanged for both. AMOS cells with water vapor-grown interfacial layers showed no significant change in V sub oc.

Shin, B. K.↗
NASA NTRS1978

Resonant absorption of Alfvenic surface waves and the heating of solar coronal loops

A first-order mass- and energy-balance model is developed for steady-state EUV 'coronal rain' loops that are not associated with postflare events and are often seen over sunspot umbrae. The model disregards variations in a loop's thermodynamic and magnetic properties along magnetic-field lines and yields average properties of the resonant absorption sheath, the boundary layer, and the loop's interior. Both irreversible heating by Alfvenic surface waves and energy transport via induced boundary-layer convection are taken into account in the analysis. Results that include predictions of the temperatures of the sheath and the boundary-layer plasma, the temperature of the interior plasma, the radiative output of the loop, and the filling factor associated with this radiation are given in terms of the period and velocity amplitude of the relevant surface wave as well as various parameters that characterize a typical 'coronal rain' loop. These results are shown to be consistent with the observed minimum and maximum temperatures as well as the radiative output of typical 'coronal rain' loops.

Ionson, J. A.↗
NASA NTRS1979

Geometries and focal properties of two electron-lens systems useful in low-energy electron or ion scattering

Geometries and focal properties are given for two types of electron-lens system commonly needed in electron scattering. One is an electron gun that focuses electrons from a thermionic emitter onto a fixed point (target) over a wide range of final energies. The other is an electron analyzer system that focuses scattered electrons of variable energy onto a fixed position (e.g., the entrance plane of an analyzer) at fixed energy with a zero final beam angle. Analyzer-system focusing properties are given for superelastically, elastically, and inelastically scattered electrons. Computer calculations incorporating recent accurate tube-lens focal properties are used to compute lens voltages, locations and diameters of all pupils and windows, filling factors, and asymptotic rays throughout each lens system. Focus voltages as a function of electron energy and energy change are given, and limits of operation of each system discussed. Both lens systems have been in routine use for several years, and good agreement has been consistently found between calculated and operating lens voltages.

Chutjian, A.↗
NASA NTRS1979

The potential of np GaAs solar cells for high efficiency concentrator applications

This communication considers the design of the front grid contact of np GaAs solar cells for high efficiency concentrator applications. This design involves shadowing, contact resistance, and active layer sheet resistance losses, and at high concentrations, the power loss due to voltage drop on the resistance of the grid fingers should be considered. Analysis of the performance can be calculated as a function of junction depth and surface recombination velocity. The junction depth can be optimized by considering its effect on the collection efficiency of the dark current-voltage characteristics or the open circuit voltage, and on the series resistance loss or the fill factor for material parameters. The choice of the material parameters, calculation of the short circuit current, the selection of the n layer thickness, and the cell maximum power and efficiency are discussed. It is concluded that optimized multi-grid structures should allow the use of 10 by 10 sq cm cells with good efficiencies at high concentration ratios, and efficiencies of 22 to 25% should be obtainable from large area cells at concentrations of 40 AM1.

Flat, A.↗