Modulation Transfer Function of Active Pixel Focal Plane Arrays
Modulation Transfer Function (MTF) is an important figure of merit in focal plane array sensors, especially for accurate target positions such as star trackers.
active↗
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Low background focal plane array testing in the far infrared
A new long-wavelength infrared test facility is being developed to conduct proof-of-performance tests of focal plane arrays for the Infrared Astronomical Satellite (IRAS) telescope. This facility is believed to be unique in that it will calibrate full-sized arrays designed for the 5-120-micron region of the IR spectrum under simulated spaceflight conditions and at background levels as low as 8 million photons/sq cm-sec. Most of the tests will be performed in a main test chamber which contains a liquid helium shroud, blackbody sources, an arrangement to simulate zodiacal background, and spot scanning optics. A noncontaminating high-vacuum pumping system will be used to evacuate the chamber prior to cool-down to prevent molecular deposition. All housekeeping and focal plane signal outputs are multiplexed, digitized, and transmitted on high-speed data lines to a PDP-11/70 computer. The computer provides real-time displays on a color CRT terminal and stores data for subsequent reduction and hard copy output. An overview of the conceptual design and performance specifications of the test facility are given.
Iufer, E. J.↗
1024 x 1024 pixel mid-wavelength and long-wavelength infrared QWIP focal plane arrays for imaging applications
Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 10(24) x 10(24) pixel quantum well infrared photodetector (QWIP) focal planes have been demonstrated with excellent imaging performance. The MWIR QWIP detector array has demonstrated a noise equivalent differential temperature (NEAT) of 17 mK at a 95 K operating temperature with f/2.5 optics at 300 K background and the LWIR detector array has demonstrated a NEAT of 13 mK at a 70 K operating temperature with the same optical and background conditions as the MWIR detector array after the subtraction of system noise. Both MWIR and LWIR focal planes have shown background limited performance (BLIP) at 90 K and 70 K operating temperatures respectively, with similar optical and background conditions. In this paper, we will discuss the performance in terms of quantum efficiency, NE(delta)T, uniformity, operability and modulation transfer functions.
uniformity↗
Technology Developments for FIR Bolometric Detector Focal Plane Assemblies
A discussion of recent technology developments for far-infrared bolometric detector focal plane assemblies is provided. Some of the developments include strategies for fabricating high filling fraction background limited-transition edge sensor bolometric detectors, impedance-matched absorber coatings, a micromachined blackbody source, and the capability to fabricate indium bumps on non-planar substrates.
Detectors↗
Blocked impurity band hybrid infrared focal plane arrays for astronomy
High-performance infrared hybrid focal plane arrays using 10- x 50-element Si:As blocked-impurity-band (BIB) detectors (cutoff wavelength = 28 microns) and matching switched MOSFET multiplexers have been developed and characterized for space astronomy. Use of impurity-band-conduction technology provides detectors which are nuclear-radiation-hard and free of the many anomalies associated with conventional silicon photoconductive detectors. Emphasis in the present work is on recent advances in detector material quality which have led to significantly improved detector and hybrid characteristics. Results demonstrating increased quantum efficiency (particularly at short-wavelength infrared), obtained by varying the BIB detector properties (infrared active layer thickness and arsenic doping profile), are summarized. Measured read noise and dark current for different temperatures are reported. The hybrid array performance achieved demonstrates that BIB detectors are well suited for use in astronomical instrumentation.
Reynolds, D. B.↗
Focal-Plane Arrays of Quantum-Dot Infrared Photodetectors
Focal-plane arrays of semiconductor quantum-dot infrared photodetectors (QDIPs) are being developed as superior alternatives to prior infrared imagers, including imagers based on HgCdTe devices and, especially, those based on quantum-well infrared photodetectors (QWIPs). HgCdTe devices and arrays thereof are difficult to fabricate and operate, and they exhibit large nonunformities and high 1/f (where f signifies frequency) noise. QWIPs are easier to fabricate and operate, can be made nearly uniform, and exhibit lower 1/f noise, but they exhibit larger dark currents, and their quantization only along the growth direction prevents them from absorbing photons at normal incidence, thereby limiting their quantum efficiencies. Like QWIPs, QDIPs offer the advantages of greater ease of operation, greater uniformity, and lower 1/f noise, but without the disadvantages: QDIPs exhibit lower dark currents, and quantum efficiencies of QDIPs are greater because the three-dimensional quantization of QDIPs is favorable to the absorption of photons at normal or oblique incidence. Moreover, QDIPs can be operated at higher temperatures (around 200 K) than are required for operation of QWIPs. The main problem in the development of QDIP imagers is to fabricate quantum dots with the requisite uniformity of size and spacing. A promising approach to be tested soon involves the use of electron-beam lithography to define the locations and sizes of quantum dots. A photoresist-covered GaAs substrate would be exposed to the beam generated by an advanced, high-precision electron beam apparatus. The exposure pattern would consist of spots typically having a diameter of 4 nm and typically spaced 20 nm apart. The exposed photoresist would be developed by either a high-contrast or a low-contrast method. In the high-contrast method, the spots would be etched in such a way as to form steep-wall holes all the way down to the substrate. The holes would be wider than the electron beam spots perhaps as wide as 15 to 20 nm, but may be sufficient to control the growth of the quantum dots. In the low-contrast method, the resist would be etched in such a way as to form dimples, the shapes of which would mimic the electron-beam density profile. Then by use of a transfer etching process that etches the substrate faster than it etches the resist, either the pattern of holes or a pattern comprising the narrow, lowest portions of the dimples would be imparted to the substrate. Having been thus patterned, the substrate would be cleaned. The resulting holes or dimples in the substrate would serve as nucleation sites for the growth of quantum dots of controlled size in the following steps. The substrate would be cleaned, then placed in a molecular-beam-epitaxy (MBE) chamber, where native oxide would be thermally desorbed and the quantum dots would be grown.
Gunapala, Sarath↗
Demonstration of 640x512 pixel four-band Quantum Well Infrared Photodetector (QWIP) focal plane array
We have demonstrated the first monolithic spatially separated four-band 640x512 pixel QWIP focal plane array.
focal plane arrays QWIPs long-wavelength LWIR hand↗
Large format, broadband and multi-color GaAs/AIGaAs quantum well infrared photodetector (QWIP) focal plane arrays
We discuss the results of a 10-16 um large format broadband QWIP focal plane arrary.
IR, quantum well, thermal imaging, multi-spectral,↗
Coherent Optical Focal Plane Array Receiver for PPM Signals: Investigation and Applications
The performance of a coherent optical focal plane array receiver for PPM signals under atmospheric turbulence is investigated and applications of this system are addressed. The experimental demonstration of this project has already been explained in previous publications [1]. This article shows a more exhaustive analysis of the expressions needed to obtain the Bit Error Rate (BER) for the real system under study in the laboratory. Selected experimental results of this system are described and compared with theoretical BER expressions, and array combining gains are presented. Receiver sensitivity in terms of photons per bit (PPB) is examined; BER results are shown as a function of signal to noise ratios, (SNR), as well as a function of photons per symbol, and photons per bit.
shot noise limited↗
Focal plane array optical proximity sensor
An optical proximity sensor for optically detecting an object within a predetermined detection volume is described. More specifically, an optical proximity sensor is disclosed having an illuminator assembly including lens and a plurality of light-emitting diodes located at first predetermined positions along the focal plane of the illuminator lens. A detector assembly including a detector lens and a plurality of photodiodes located at second predetermined positions along the focal plane of the detector lens is also provided. The two lenses are spaced apart a predetermined distance in order to define a predetermined detection volume. Additionally, a combination of optical proximity sensors, according to the invention, is disclosed wherein the sensors can be used in conjunction with a vehicle to provide a safety system for warning an operator when an object is within a volume defined by the proximity sensor combination.
Johnston, A. R.↗
Submillisecond measurements of system optical modulation functions in mosaic focal plane arrays
Measurements of system optical modulation functions (MTF, SWR) may be distorted by time-dependent environmental effects (thermal, vibration, flexure) and by electronics drift. Fast data collection may therefore be advantageous by minimizing drift time. The problem of fast data collection is accentuated when modulation data must be taken on a large number of detectors in a focal plane array. A method has been developed for the generation and storage of knife edge data from focal plane arrays, where data collection time per detector is in the submillisecond range. Once knife edge collects are completed, MTF response is found using conventional convolution techniques. SWR is obtained directly from knife edge response using a computerized simulation algorithm which bypasses use of MTF harmonics. Requirements for detector electronics speed, damping, and dynamic range are considered.
Thurlow, P. E.↗
Digital Mid-Wavelength and Long-Wavelength Infrared Focal Planes for SmallSat Applications
In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The high operating temperature (HOT) BIRD focal plane arrays (FPAs) offer the same high performance, uniformity, operability, manufacturability, and affordability advantages as InSb. However, mid-wavelength infrared (MWIR) HOT-BIRD FPAs can operate at significantly higher temperatures (>150K) than InSb FPAs (typically 80K). Moreover, while InSb has a fixed cutoff wavelength (~5.4 µm), the HOT-BIRD offers a continuous adjustable cutoff wavelength, ranging from ~4 µm to >15 µm, and is therefore also suitable for long wavelength infrared (LWIR) as well. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability. Furthermore, we will discuss the advantages of the utilization of all digital read out integrated circuits with HOT-BIRDs.
Pagano, Thomas↗
Mid-Wavelength and Long-Wavelength Infrared Focal Planes for SmallSat Applications
In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The high operating temperature (HOT) BIRD focal plane arrays (FPAs) offer the same high performance, uniformity, operability, manufacturability, and affordability advantages as InSb. However, mid-wavelength infrared (MWIR) HOT-BIRD FPAs can operate at significantly higher temperatures (>150K) than InSb FPAs (typically 80K). Moreover, while InSb has a fixed cutoff wavelength (~5.4 µm), the HOT-BIRD offers a continuous adjustable cutoff wavelength, ranging from ~4 µm to >15 µm, and is therefore also suitable for long wavelength infrared (LWIR) as well. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability. We have also exploring the possibilities of integrating either metasurface resonator cavity or metasurface based flatlens with individual pixels to improve the signal-to-noise ratio of the detectors. Furthermore, we will discuss the advantages of the utilization of all digital read out integrated circuits with HOT-BIRDs.
Ghuman, Parminder↗
Detectors and Focal Plane Modules for Weather Satellites
Weather satellite instruments require detectors with a variety of wavelengths ranging from the visible to VLWIR. One of the remote sensing applications is the geostationary GOES-ABI imager covering wavelengths from the 450 to 490 nm band through the 13.0 to 13.6 micron band. There are a total of 16 spectral bands covered. The Cross-track infrared Sounder (CrIS) is a Polar Orbiting interferometric sensor that measures earth radiances at high spectral resolution, using the data to provide pressure, temperature and moisture profiles of the atmosphere. The pressure, temperature and moisture sounding data are used in weather prediction models that track storms, predict levels of precipitation etc. The CrIS instrument contains SWIR (lamba(sub c) approximately 5 micron at 98K), MWIR (lambda(sub c) approximately 9 micron at 98K) and LWIRs (lamba(sub c) approximately 15.5 micron at 81K) bands in three Focal Plane Array Assemblies (FPAAs). GOES-ABI contains three focal plane modules (FPMs), (i) a visible-near infrared module consisting of three visible and three near infrared channels, (ii) a MWIR module comprised of five channels from 3.9 micron to 8.6 micron and (iii) a 9.6 micron to 13.3 micron, five-channel LWIR module. The VNIR FPM operates at 205 K, and the MWIR and LWIR FPMs operate at 60 K. Each spectral channel has a redundant array built into a single detector chip. Switching is thus permitted from the primary selected array in each channel to the redundant array, given any degradation in performance of the primary array during the course of the mission. Silicon p-i-n detectors are used for the 0.47 micron to 0.86 micron channels. The thirteen channels above 1 micron are fabricated in various compositions of Hg1-xCdxTe, and in this particular case using two different detector architectures. The 1.38 micron to 9.61 micron channels are all fabricated in Hg1-xCdxTe grown by Liquid Phase Epitaxy (LPE) using the HDVIP detector architecture. Molecular beam epitaxy (MBE)-grown Hg1-xCdxTe material are used for the LWIR 10.35 micron to 13.3 micron channels fabricated in Double layer planar heterostructure (DLPH) detectors. This is the same architecture used for the CrIS detectors CrIS detectors are 850 micron diameter detectors with each FPAA consisting of nine photovoltaic detectors arranged in a 3 x 3 pattern. Each detector has an accompanying cold preamplifier. SWIR and MWIR FPAAs operate at 98 K and the LWIR FPAA at 81 K, permitting the use of passive radiators to cool the detectors. D* requirements at peak wavelength are ≥ 5.0E+10 Jones for LWIR, ≥ 9.3E+10 Jones for MWIR and ≥ 3.0E+11 Jones for SWIR. All FPAAs exceeded the D* requirements. Measured mean values for the nine photodiodes in each of the LWIR, MWIR and SWIR FPAAs are D* = 5.3 x 10(exp 10) cm-Hz(exp 1/2)/W at 14.0 micron, 1.0 x 10(exp 11) cm-Hz(exp 1/2)/W at 8.0 micron and 3.1 x 10(exp 11) cm-Hz(exp 1/2)/W at 4.64 micron.
satellite instruments↗
Results of testing short wavelength HgCdTe hybrid focal plane arrays for earth remote sensing applications
The NASA Imaging Spectrometer program has the objective to develop the next generation of earth remote sensing systems. One part of the program is concerned with the production of advanced short-wavelength mercury cadmium telluride (HgCdTe) hybrid focal plane arrays (FPAs). These arrays are needed for several instruments, including the Shuttle Imaging Spectrometer (SIS), which requires a mosaic of six 64 x 64-element arrays with a cutoff wavelength of 2.5 microns. A device description is provided and the test results are considered. The Airborne Imaging Spectrometer (AIS) is discussed, taking into account an instrument description, focal plane requirements, and AIS results.
Blessinger, M. A.↗
T2SL Focal Planes for Compact Remote Sensing Instruments
In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The high operating temperature (HOT) BIRD focal plane arrays (FPAs) offer the same high performance, uniformity, operability, manufacturability, and affordability advantages as InSb. However, mid-wavelength infrared (MWIR) HOT-BIRD FPAs can operate at significantly higher temperatures (>150K) than InSb FPAs (typically 80K). Moreover, while InSb has a fixed cutoff wavelength (~5.4 µm), the HOT-BIRD offers a continuous adjustable cutoff wavelength, ranging from ~4 µm to >15 µm, and is therefore also suitable for long wavelength infrared (LWIR) as well. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability. We have also exploring the possibilities of implementing either metasurface resonator cavity or metasurface based flatlens to improve the signal-to-noise ratio of the detectors.
Ghuman, Parminder↗
High operating temperature T2SL digital focal plane arrays for earth remote sensing instruments
In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The high operating temperature (HOT) BIRD focal plane arrays (FPAs) offer the same high performance, uniformity, operability, manufacturability, and affordability advantages as InSb. However, mid-wavelength infrared (MWIR) HOT-BIRD FPAs can operate at significantly higher temperatures (>150K) than InSb FPAs (typically 80K). Moreover, while InSb has a fixed cutoff wavelength (~5.4 µm), the HOT-BIRD offers a continuous adjustable cutoff wavelength, ranging from ~4 µm to >15 µm, and is therefore also suitable for long wavelength infrared (LWIR) as well. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability. We have also exploring the possibilities of integrating either metasurface resonator cavity or metasurface based flatlens with individual pixels to improve the signal-to-noise ratio of the detectors. Furthermore, we will discuss the advantages of the utilization of all digital read out integrated circuits with HOT-BIRDs.
Ghuman, and Parminder↗
320 x 256 Complementary Barrier Infrared Detector Focal Plane Array for Long-Wave Infrared Imaging
A 320 x 256 Complementary Barrier Infrared (CBIRD) focal plane array for long-wavelength infrared (LWIR) imaging is reported. The arrays were grown by molecular beam expitaxy (MBE) with a 300 period 1.9 um thick absorber. The mean dark current density of 2.2 x 10-4 A/cm2 was measured at an operating bias of 128 mV with a long wavelength cutoff of 8.8 ?m observed at 50% of the peak. The maximum quantum efficiency was 54% measured at 5.6 ?m. Operating at T = 80K, the array yielded an 81% fill factor with 97% operability. Good imagery with a mean noise equivalent different temperature (NE?T) of 18.6 mK and a mean detectivity of D* = 1.3 x 1011 cm-Hz1/2/W was achieved. The substrate was thinned using mechanical lapping and neither an AR coating nor a passivation layer was applied. This article provides the details of the fabrication process for achieving low-dark current LWIR CBIRD arrays. Discussion for an effective hard mask for excellent pattern transfer is given and appropriate mounting techniques for good thermal contact during the dry etching process is described. The challenges and differences between etching large 200 ?m test diodes and small 28 ?m FPA pixels are given.
Focal Plane Arrays (FPA)↗