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DOE OSTI2024

Photosynthetic capacity in middle-aged larch and spruce acclimates independently to experimental warming and elevated CO 2

Photosynthetic acclimation to both warming and elevated CO 2 of boreal trees remains a key uncertainty in modelling the response of photosynthesis to future climates. We investigated the impact of increased growth temperature and elevated CO 2 on photosynthetic capacity (V cmax and J max ) in mature trees of two North American boreal conifers, tamarack and black spruce. We show that V cmax and J max at a standard temperature of 25°C did not change with warming, while V cmax and J max at their thermal optima (T opt ) and growth temperature (T g ) increased. Moreover, V cmax and J max at either 25°C, T opt or T g decreased with elevated CO 2 . The J max /V cmax ratio decreased with warming when assessed at both T opt and T g but did not significantly vary at 25°C. The J max /V cmax increased with elevated CO 2 at either reference temperature. We found no significant interaction between warming and elevated CO 2 on all traits. If this lack of interaction between warming and elevated CO 2 on the V cmax , J max and J max /V cmax ratio is a general trend, it would have significant implications for improving photosynthesis representation in vegetation models. However, future research is required to investigate the widespread nature of this response in a larger number of species and biomes.

60 APPLIED LIFE SCIENCES↗

NASA NTRS1972

Thermolabile triose phosphate isomerase in a psychrophilic Clostridium.

It was found that a psychrophilic Clostridium contains a triose phosphate isomerase which is very labile at moderate temperatures. An investigation showed that the optimal growth temperature of the psychrophile was between 15 and 20 deg C. No growth occurred at 25 deg C. The thermostability of the glycolytic enzymes in the cell-free extracts of Clostridium sp. strain 69 was studied. The data obtained show that the triose phosphate isomerase is quite labile at moderate temperatures. The instability of the enzyme is sufficient to explain the low maximum growth temperature of the psychrophile.

Shing, Y. W.↗

NASA NTRS1993

Growth kinetics and characterizations of gallium nitride thin films by remote PECVD

Thin films of GaN have been deposited at relatively low growth temperatures by remote plasma-enhanced chemical-vapor deposition (RPECVD), using a plasma excited NH3, and trimethylgallium (TMG), injected downstream from the plasma. The activation energy for GaN growth has been tentatively assigned to the dissociation of NH groups as the primary N-atom precursors in the surface reaction with adsorbed TMG, or TMG fragments. At high He flow rates, an abrupt increase in the growth rate is observed and corresponds to a change in the reaction mechanism attributed to the formation of atomic N. XRD reveals an increased tendency to ordered growth in the (0001) direction with increasing growth temperature, He flow rate, and RF plasma power. IR spectra show the fundamental lattice mode of GaN at 530 cm without evidence for vibrational modes of hydrocarbon groups.

Choi, S. W.↗

DOE OSTI2022

Analysis of combustion chamber deposit growth on temperature swing thermal barrier coatings in a spark ignition engine

Temperature swing thermal barrier coatings (TBCs) have the potential to improve efficiency and performance through thermal management of the combustion chamber. However, the effects of combustion chamber deposits (CCDs) on the surface of the TBCs are unclear. Therefore, this paper analyzes the impact of CCD formation on a temperature swing TBC. A piston and a heat flux probe coated with a novel material are installed in a single-cylinder research engine at a low-load condition for 62.5 h to promote CCD growth. Every 12.5 h, the performance at a knock limited condition is assessed and thermophysical property measurements on the heat flux probe are performed. Net thermal efficiency increased by 0.4% absolute after 12.5 h relative to the baseline condition, but further CCD growth caused a dithering of efficiency between the 12.5 h and baseline points. The KLSA retarded consistently throughout this period. As a result, external property measurements with the coated heat flux probe showed an improvement in the thermophysical properties of the TBC/CCD layer.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

NASA NTRS1989

The influence of Sb doping on the growth and electronic properties of GaAs(100) and AlGaAs(100)

Isoelectronic doping using antimony has been shown to reduce traps and improve material properties during epitaxial growth of Si doped GaAs(100) and AlGaAs(100). In this study, the effect of the antimony dopant on the optimal growth temperature is examined with the aim of producing high-quality heterostructures at lower temperatues. High-quality films of GaAs and AlGaAs have been grown by molecular-beam epitaxy at the normal growth temperatures of 610 and 700 C, respectively, and 50-100 C below this temperature using varying small amounts of Sb as a dopant. Electrical properties of the films were then examined using Hall mobility measurements and deep-level transient spectroscopy.

Jamison, K. D.↗

NASA NTRS1991

Characterization of MOCVD fluid dynamics by laser velocimetry

Three-component laser velocimetry techniques are applied to characterize the fluid dynamics of an MOCVD reactor. These methods provide three-dimensional quantitative measurements of the gas velocities inside the reactor at typical growth temperatures. The effects of buoyancy-induced convection are examined by comparing data from the hot reactor with cold reactor results. It was found that thermal convection dominated the fluid dynamics of the reactor at growth temperatures. Cold reactor tests showed unstable flow patterns that were subject to fluidic switching effects.

Johnson, E. J.↗

DOE OSTI2026

A New Route Toward Atomically Flat and Defect-Free Ge/SiGe Planar Heterostructures

Germanium-based planar heterostructures are emerging as versatile platforms for realizing quantum devices. In particular, planar Ge/SiGe quantum wells (QWs) host hole states with exceptionally high mobility and strong, electrically tunable spin–orbit interactions, enabling full electrical control of quantum information. A key requirement for these systems is the growth of microscopic, defect-free, atomically flat Ge QW heterostructures on relaxed or reverse-graded SiGe buffer layers, as well as on commercial Ge substrates. While several physical deposition techniques have demonstrated high-quality planar Ge/SiGe QWs, a major challenge remains: minimizing defect density typically requires high growth temperatures, which are incompatible with standard CMOS process flows. Here, we present a convenient low-temperature process for realizing high-quality planar SiGe/Ge heterostructures using a combination of thermal and electron-beam evaporation. We systematically map the effects of ex-situ and in-situ substrate preparation protocols, growth temperature, and post-deposition annealing conditions, and correlate these parameters with surface roughness and defect density. We find that in-situ oxide desorption conditions and post-annealing parameters have the most pronounced impact on improving surface quality. Under optimized conditions, we achieve atomically smooth surfaces with root-mean-square roughness σrms ≤ 10 Å and negligible defect density. Interestingly, thermally evaporated Ge layers exhibit oriented triangular crystallites that elongate upon post-annealing in the presence of high Ge vapor pressure. These results demonstrate that this simple, low-temperature deposition approach is a viable and effective route for achieving high-quality Ge QW heterostructures, with strong potential for scalable quantum computing and sensing applications.

Tripathi, Malvika [Fermilab] (ORCID:00000001989251↗

DOE OSTI2026

A New Route Toward Atomically Flat and Defect-Free Ge/SiGe Planar Heterostructures

Tripathi, Malvika [Fermilab] (ORCID:00000001989251↗

NASA NTRS1984

Elevated temperature crack growth

Critical gas turbine engine hot section components such as blades, vanes, and combustor liners tend to develop minute cracks during early stages of operations. The ability of currently available path-independent (P-I) integrals to correlate fatigue crack propagation under conditions that simulate the turbojet engine combustor liner environment was determined. To date, an appropriate specimen design and a crack displacement measurement method were determined. Alloy 718 was selected as the analog material based on its ability to simulate high temperature behavior at lower temperatures in order to facilitate experimental measurements. Available P-I integrals were reviewed and the best approaches are being programmed into a finite element post processor for eventual comparison with experimental data. The experimental data will include cyclic crack growth tests under thermomechanical conditions, and, additionally, thermal gradients.

Kim, K. S.↗

NASA NTRS1988

Nonlinear absorption properties of AlGaAs/GaAs multiple quantum wells grown by metalorganic chemical vapor deposition

The nonlinear absorption properties of the excitonic resonances associated with multiple quantum wells (MQWs) in AlGaAs/GaAs grown by metalorganic chemical vapor deposition are reported. The dependence of the saturation properties on growth parameters, especially growth temperature, and the well width are described. The minimum measured saturation intensity for these materials is 250 W/sq cm, the lowest reported value to date. The low saturation intensities are the result of excellent minority carrier properties. A systematic study of minority carrier lifetimes in quantum wells are reported. Lifetimes range from 50-350 ns depending on growth temperature and well width. When corrected for lateral diffusion effects and the measured minority carrier lifetime, the saturation data suggest that saturation intensities as low as 2.3 W/sq cm can be achieved in this system. The first measurements of the dependence of the exciton area and the magnitude of the excitonic absorption on well width are prsented. The growth of MQW structures on transparent GaP substrates is demonstrated and the electroabsorption properties of these structures are reviewed.

Lee, Hsing-Chung↗

NASA NTRS1986

Elevated temperature crack growth

It is necessary to relate the processes that control crack growth in the immediate vicinity of the crack tip to parameters that can be calculated from remote quantities, such as forces, stresses, or displacements. The most likely parameters appear to be certain path-independent (PI) integrals, several of which have already been proposed for application to high temperature inelastic problems. The ability of currently available PI-integrals to correlate fatigue crack propagation under conditions that simulate the engine combustor liner environment was determined. The utility of advanced fracture mechanics measurements will also be evaluated and determined during the course of the program.

Malik, S. N.↗

DOE OSTI2025

High polarization InAlGaAs/AlGaAs photocathodes grown using MBE

Strained superlattices of GaAs/GaAsP grown using molecular beam epitaxy (MBE) have been used for more than 20 years to generate high polarization electron beams for nuclear physics. GaAs/GaAsP superlattices have several manufacturing challenges, including the thick graded layer required for the virtual GaAsP substrate, the significant difference in optimal growth temperatures for GaAs and GaAsP, and the scarcity of MBE systems using phosphorus. InAlGaAs/AlGaAs strained superlattice photocathode are an alternative structure that eliminates many of hurdles to growing GaAs/GaAsP in MBE systems. Measurements of quantum efficiency and polarization from InAlGaAs/AlGaAs will be presented. These include studies on a variety of growth parameters to optimize performance, including digital alloys, growth temperature variations, and variation in structure.

Stutzman, Marcy L↗

NASA NTRS1984

Fracture temperature and flaw growth in nitronic 40 at cryogenic temperatures

The fracture resistance and fatigue response of Armco Nitronic 40 austenitic stainless steel were evaluated under cryogenic conditions. Tensile, fracture toughness and fatigue crack growth properties were measured at -275 F. The tensile yield strength was approximately 120 ksi and the fracture toughness was estimated to be 350 ksi-in /2 on the basis of fracture toughness measurements. Testing was conducted to evaluate the behavior of a simulated section of the wing of the Pathfinder 1 model subject to a load and temperature history typical of that for testing in the National Transonic Facility. The wing section model incorporated a proposed brazing technique for pressure-transducer attachment. The simulated wing section performed satisfactorily at stress levels of nearly 60 percent of the material yield strength. The brazing technique proved to be an effective method of transducer attachment under conditions of high stress levels and large temperature excursions.

Domack, M. S.↗

NASA NTRS1985

Elevated temperature crack growth

The purpose is to determine the ability of currently available P-I integrals to correlate fatigue crack propagation under conditions that simulate the turbojet engine combustor liner environment. The utility of advanced fracture mechanics measurements will also be evaluated during the course of the program. To date, an appropriate specimen design, a crack displacement measurement method, and boundary condition simulation in the computational model of the specimen were achieved. Alloy 718 was selected as an analog material based on its ability to simulate high temperature behavior at lower temperatures. Tensile and cyclic tests were run at several strain rates so that an appropriate constitutive model could be developed. Suitable P-I integrals were programmed into a finite element post-processor for eventual comparison with experimental data.

Malik, S. N.↗

DOE OSTI2020

Embedding physics domain knowledge into a Bayesian network enables layer-by-layer process innovation for photovoltaics

Process optimization of photovoltaic devices is a time-intensive, trial-and-error endeavor, which lacks full transparency of the underlying physics and relies on user-imposed constraints that may or may not lead to a global optimum. Herein, we demonstrate that embedding physics domain knowledge into a Bayesian network enables an optimization approach for gallium arsenide (GaAs) solar cells that identifies the root cause(s) of underperformance with layer-by-layer resolution and reveals alternative optimal process windows beyond traditional black-box optimization. Our Bayesian network approach links a key GaAs process variable (growth temperature) to material descriptors (bulk and interface properties, e.g., bulk lifetime, doping, and surface recombination) and device performance parameters (e.g., cell efficiency). For this purpose, we combine a Bayesian inference framework with a neural network surrogate device-physics model that is 100× faster than numerical solvers. With the trained surrogate model and only a small number of experimental samples, our approach reduces significantly the time-consuming intervention and characterization required by the experimentalist. As a demonstration of our method, in only five metal organic chemical vapor depositions, we identify a superior growth temperature profile for the window, bulk, and back surface field layer of a GaAs solar cell, without any secondary measurements, and demonstrate a 6.5% relative AM1.5G efficiency improvement above traditional grid search methods.

14 SOLAR ENERGY↗

DOE OSTI2026

Solutions to Droop and the Green Gap by Novel Carrier Injection

Long-wavelength (green, yellow, red) visible light-emitting diodes (LEDs) have historically been inefficient compared to blue light-emitters in the III-nitrides. This is due to many factors, including poor material quality due to the low growth temperatures required for high Incomposition InGaN quantum wells (QWs), and the polar nature of the III-nitride crystal structure. Spontaneous and piezoelectric polarization in the III-nitrides causes enhanced quantum-confined Stark effect (QCSE), which spatially separates electrons and holes and reduces radiative recombination (ie: light output) from the devices. Polarization in the crystal also induces additional potential barriers that electrons and holes must cross over before entering the QWs where they can recombine to emit light. Both of these polarization effects worsen as emission wavelength increases, making blue III-nitride LEDs are the most efficient and red III-nitride LEDs the least efficient. The focus of this project has been solving the latter polarization-related issue through the implementation of V-defects in long wavelength LEDs. V-defects are morphological defects which are commonly observed in c-plane III-nitrides. They are observed as hexagonal pyramid-shaped depressions on the c-plane surface, with six semipolar sidewalls. They typically form at the apex of threading dislocations (TDs) under conditions of kinetically-limited growth and low growth-temperature. They were initially thought to be detrimental to LED performance and much early work focused on eliminating them entirely from III-nitride devices. However, over the past decade work has emerged that indicate that they can improve LED performance by allowing electrons and holes to bypass the polarization-induced barriers present in the c-plane and directly enter the QWs of an LED. This is due to the semipolar nature of the V-defect sidewall: these sidewalls are thin and lack the polarization-induced barriers which prevent carriers easily moving between layers. V-defects have since been determined to be an efficient avenue by which to inject electrons and holes into the c-plane QWs where they can recombine to emit light. Throughout this project we have explored lateral injection through a variety of methods: simulation (Task 2), epitaxial growth of V-defect and non-V-defect LEDs (Tasks 1, 3, 4, 5, 6), and advanced characterization methods (Task 7). All tasks have been completed. A description of each task completed follows from this section.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2024

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

V-defects are morphological defects that typically form on threading dislocations during epitaxial growth of $(0001)$-oriented GaN layers. A V-defect is a hexagonal pyramid-shaped depression with six {$10\bar{1}1$}-oriented sidewalls. These semipolar sidewalls have a lower polarization barrier than the polarization barriers present between the polar c-plane quantum wells and quantum barriers and can laterally inject carriers directly into quantum wells in GaN-based light emitting diodes (LEDs). This is especially important, as the high polarization field in c-plane GaN is a significant factor in the high forward voltage of GaN LEDs. The optimal V-defect density for efficient lateral carrier injection in a GaN LED (∼10 9 cm −2 ) is typically an order of magnitude higher than the threading dislocation density of GaN grown on patterned sapphire substrates (∼10 8 cm −2 ). Pure-edge dislocation loops have been known to exist in GaN, and their formation into large V-defects via low-temperature growth with high Si-doping has recently been studied. Here, in this work, we develop a method for pure-edge threading dislocation half-loop formation and density control via disilane flow, growth temperature, and thickness of the half-loop generation layer. We also develop a method of forming the threading dislocation half-loops into V-defects of comparable size to those originating from substrate threading dislocations.

Crystallographic defects↗

DOE OSTI2023

Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform

Two-dimensional (2D) materials are promising candidates for future electronics due to their excellent electrical and photonic properties. Although promising results on the wafer-scale synthesis (≤150 mm diameter) of monolayer molybdenum disulfide (MoS 2 ) have already been reported, the high-quality synthesis of 2D materials on wafers of 200 mm or larger, which are typically used in commercial silicon foundries, remains difficult. The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal–oxide–semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 °C). This high temperature forces the use of challenging transfer processes, which tend to introduce defects and contamination to both the 2D materials and the BEOL circuits. Here we report a low-thermal-budget synthesis method (growth temperature < 300 °C, growth time ≤ 60 min) for monolayer MoS 2 films, which enables the 2D material to be synthesized at a temperature below the precursor decomposition temperature and grown directly on silicon CMOS circuits without requiring any transfer process. We designed a metal–organic chemical vapour deposition reactor to separate the low-temperature growth region from the high-temperature chalcogenide-precursor-decomposition region. We obtain monolayer MoS 2 with electrical uniformity on 200 mm wafers, as well as a high material quality with an electron mobility of ~35.9 cm 2 V -1 s -1 . Finally, we demonstrate a silicon-CMOS-compatible BEOL fabrication process flow for MoS 2 transistors; the performance of these silicon devices shows negligible degradation (current variation < 0.5%, threshold voltage shift < 20 mV). We believe that this is an important step towards monolithic 3D integration for future electronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗