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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS1980

Effects of impurities in coal-derived liquids on accelerated hot corrosion of superalloys

A Mach 0.3 burner rig was used to determine the effects of potential coal derived liquid fuel impurity combustion of products on hot corrosion in IN-100, IN-792, IN_738, U-700, Mar M-509, and 304 stainless steel. The impurities, added as aqueous solutions to the combustor, were salts of sodium, potassium, vanadium, molybdenum, tungsten, phosphorus, and lead. Extent of attack was determined by metal consumption and compared to the effects of sodium alone. Vanadium, molybdenum, tungsten, phosphorous, and lead in combination with sodium all resulted in increased attack as compared with sodium alone at some temperatures, apparently due in large part to the extension of the formation of liquid deposits. Varying the sodium-potassium ratio had little effect for ratios less than 1:3 for which reduced, but measurable, attack was observed.

Deadmore, D. L.↗
NASA NTRS1980

Dependence of growth rate of quartz in fused silica on pressure and impurity content

The effects of pressure, temperature, and some variations in impurity content on the growth rate u of quartz into fused silica were measured. Under all conditions the growth rate was interface controlled and increased exponentially with pressure with an activation volume averaging -21.2 cu cm/mole. The activation enthalpy for all specimens is extrapolated to a zero pressure value of 64 kcal/mole, within the experimental uncertainty. At a given stoichiometry the effect of hydroxyl content on growth rate is described entirely by a linear term C(OH) in the prefactor of the equation for the growth rate. The effect of chlorine impurity can be described similarly. Also u is increased as the ideal stoichiometry is approached from the partially reduced state.

Fratello, V. J.↗
NASA NTRS1981

Albedo and flux extinction coefficient of impure snow for diffuse shortwave radiation

Impurities enter a snowpack as a result of fallout of scavenging by falling snow crystals. Albedo and flux extinction coefficient of soot contaminated snowcovers were studied using a two stream approximation of the radiative transfer equation. The effect of soot was calculated by two methods: independent scattering by ice grains and impurities and average refractive index for ice grains. Both methods predict a qualitatively similar effect of soot; the albedo is decreased and the extinction coefficient is increased compared to that for pure snow in the visible region; the infrared properties are largely unaffected. Quantitatively, however, the effect of soot is more pronounced in the average refractive index method. Soot contamination provides a qualitative explanation for several snow observations.

Choudhury, B. J.↗
NASA NTRS1981

Silicon materials task of the low-cost solar array project. Phase 4: Effects of impurities and processing on silicon solar cells

The results of the study form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost-benefit relationships for the use of less pure, less costly solar grade silicon. Cr is highly mobile in silicon even at temperatures as low as 600 C. Contrasting with earlier data for Mo, Ti, and V, Cr concentrations vary from place to place in polycrystalline silicon wafers and the electrically-active Cr concentration in the polysilicon is more than an order of magnitude smaller than would be projected from single crystal impurity data. We hypothesize that Cr diffuses during ingot cooldown after growth, preferentially segregates to grain and becomes electrically deactivated. Accelerated aging data from Ni-contaminated silicon imply that no significant impurity-induced cell performance reduction should be expected over a twenty year device lifetime.

Hopkins, R. H.↗
NASA NTRS1981

Silicon materials task of the low-cost solar array project. Phase 4: Effects of impurities and processing on silicon solar cells

The effects of impurities, various thermochemical processes, and any impurity-process interactions upon the performance of terrestrial solar cells are defined. The results form a basis for silicon producers, wafer manufacturers, and cell fabricators to develop appropriate cost benefit relationships for the use of less pure, less costly solar grade silicon.

Hopkins, R. H.↗
NASA NTRS1982

Eliminating Impurity Traps in the Silane Process

Redistribution reaction section of silane process progressively separates heavier parts of chlorosilane feedstock until light silane product is available for pyrolysis. Small amount of liquid containing impurities is withdrawn from processing stages in which trapping occurs and passed to earlier processing stage in which impurities tend to be removed via chemical reactions.

Coleman, L. M.↗
NASA NTRS1982

Precipitating Chromium Impurities in Silicon Wafers

Two new treatments for silicon wafers improve solar-cell conversion efficiency by precipitating electrically-active chromium impurities. One method is simple heat treatment. Other involves laser-induced damage followed by similar heat treatment. Chromium is one impurity of concern in metallurgical-grade silicon for solar cells. In new treatment, chromium active centers are made electrically inactive by precipitating chromium from solid solution, enabling use of lower grade, lower cost silicon in cell manufacture.

Salama, A. M.↗
NASA NTRS1981

The effects of impurities on the performance of silicon solar cells

The major factors that determine the tolerable concentrations of impurities in silicon feedstock for solar cells used in power generation are discussed in this report. It is concluded that a solar-grade silicon can be defined only for a specific manufacturing process. It is also concluded that it is the electrical effects, efficiency and resistivity, that are dominant in determining tolerable concentrations of impurities in the silicon feedstock. Crystal growth effects may become important when faster growth rates and larger crystal diameters are developed and used.

Yamakawa, K. A.↗
NASA NTRS1981

Oxygen impurity effects at metal/silicide interfaces - Formation of silicon oxide and suboxides in the Ni/Si system

The effect of implanted oxygen impurities on the Ni/Ni2Si interface is investigated using X-ray photoelectron spectroscopy, He-4(+) backscattering and O(d, alpha)-16 N-14 nuclear reactions. Oxygen dosages corresponding to concentrations of 1, 2, and 3 atomic percent were implanted into Ni films evaporated on Si substrates. The oxygen, nickel, and silicon core lines were monitored as a function of time during in situ growth of the Ni silicide to determine the chemical nature of the diffusion barrier which forms in the presence of oxygen impurities. Analysis of the Ni, Si, and O core levels demonstrates that the formation of SiO2 is responsible for the Ni diffusion barrier rather than Ni oxide or mixed oxides, such as Ni2SiO4. It is determined that 2.2 x 10 to the 16th O/qu cm is sufficient to prevent Ni diffusion under UHV annealing conditions.

Grunthaner, P. J.↗
NASA NTRS1985

Oxygen and carbon impurities and related defects in silicon

Oxygen and carbon are the predominant impurities in Czochralski-grown silicon. The incorporation of oxygen and carbon during crystal growth is reviewed and device effects are discussed. Methods for controlling oxygen and carbon incorporation during crystal growth are discussed and results supporting a segregation coefficient of k=0.5 for oxygen are presented. The nucleation and precipitation behavior of oxygen is complex. Temperature and doping level effects which add insight into the role of point defects in the nucleation process are highlighted. In general, precipitation is found to be retarded in N+ and P+ silicon. The types and quantities of defects resulting from the oxygen precipitates is of interest as they are technologically useful in the process called intrinsic gettering. A comparison is made between the available defect sites and the quantities of metallic impurities present in a typical wafer which need to be gettered. Finally, a discussion of the denuded-zone, intrinsic-gettered (DZ-IG) structure on device properties is presented.

Pearce, C. W.↗
NASA NTRS1985

Cryogenic Laser Calorimetry for Impurity Analysis

The results of a one-year effort to determine the applicability of laser-calorimetric spectroscopy to the study of deep-level impurities in silicon are presented. Critical considerations for impurity analysis by laser-calorimetric spectroscopy are discussed, the design and performance of a cryogenic laser calorimeter is described, and measurements of background absorption in high-purity silicon are presented.

Swimm, R. T.↗
NASA NTRS1985

Palladium silicide formation under the influence of nitrogen and oxygen impurities

The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on 100 line-type and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and N-15(p, alpha)C-12 or O-18(p, alpha)N-15 nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting snow-plowing effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species when the silicide front reaches the nitrogen-rich region.

Ho, K. T.↗
NASA NTRS1987

Effects of substrate misorientation and background impurities on electron transport in molecular-beam-epitaxial grown GaAs/AlGaAs modulation-doped quantum-well structures

The effects of substrate misorientation off the (001) plane and of background impurities on electron transport in MBE-grown GaAs/AlGaAs modulation-doped superlattice-buffered quantum-well structures were investigated. Low-field transport data were obtained on GaAs/AlGaAs structures grown on substrates oriented 0, 2, 4, and 6.5 deg off the (001) plane towards either (111)A or (111)B. It is shown that the low-field two-dimensional electron gas (2DEG) mobility is a function of the angle and direction of the substrate orientation, and that the 2DEG mobility is a function of the direction of the applied electric field in the GaAs quantum well. The anisotropy in the 2DEG mobility is also a function of the tilt angle and tilt azimuth direction of the substrate from the (001) plane. In addition, it is shown that the amount of interface scattering from the inverted interface is a sensitive function of the amount of background impurities in the MBE machine.

Radulescu, D. C.↗
NASA NTRS1987

Advanced development of double-injection, deep-impurity semiconductor switches

Deep-impurity, double-injection devices, commonly refered to as (DI) squared devices, represent a class of semiconductor switches possessing a very high degree of tolerance to electron and neutron irradiation and to elevated temperature operation. These properties have caused them to be considered as attractive candidates for space power applications. The design, fabrication, and testing of several varieties of (DI) squared devices intended for power switching are described. All of these designs were based upon gold-doped silicon material. Test results, along with results of computer simulations of device operation, other calculations based upon the assumed mode of operation of (DI) squared devices, and empirical information regarding power semiconductor device operation and limitations, have led to the conculsion that these devices are not well suited to high-power applications. When operated in power circuitry configurations, they exhibit high-power losses in both the off-state and on-state modes. These losses are caused by phenomena inherent to the physics and material of the devices and cannot be much reduced by device design optimizations. The (DI) squared technology may, however, find application in low-power functions such as sensing, logic, and memory, when tolerance to radiation and temperature are desirable (especially is device performance is improved by incorporation of deep-level impurities other than gold.

Hanes, M. H.↗
NASA NTRS1989

Blocked impurity band hybrid infrared focal plane arrays for astronomy

High-performance infrared hybrid focal plane arrays using 10- x 50-element Si:As blocked-impurity-band (BIB) detectors (cutoff wavelength = 28 microns) and matching switched MOSFET multiplexers have been developed and characterized for space astronomy. Use of impurity-band-conduction technology provides detectors which are nuclear-radiation-hard and free of the many anomalies associated with conventional silicon photoconductive detectors. Emphasis in the present work is on recent advances in detector material quality which have led to significantly improved detector and hybrid characteristics. Results demonstrating increased quantum efficiency (particularly at short-wavelength infrared), obtained by varying the BIB detector properties (infrared active layer thickness and arsenic doping profile), are summarized. Measured read noise and dark current for different temperatures are reported. The hybrid array performance achieved demonstrates that BIB detectors are well suited for use in astronomical instrumentation.

Reynolds, D. B.↗
NASA NTRS1989

Extrinsic germanium Blocked Impurity Bank (BIB) detectors

Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

Krabach, Timothy N.↗
NASA NTRS1989

Improved Si:As BIBIB (Back-Illuminated Blocked-Impurity-Band) hybrid arrays

Results of a program to increase the short wavelength (less than 10 microns) detective quantum efficiency, eta/beta, of Si:As Impurity Band Conduction arrays are presented. The arrays are epitaxially grown Back-Illuminated Blocked (BIB) Impurity-Band (BIBIB) 10x50 detectors bonded to switched-FET multiplexers. It is shown that the 4.7 microns detective quantum efficiency increases proportionately with the thickness of the infrared active layer. A BIB array with a thick active layer, designed for low dark current, exhibits eta/beta = 7 to 9 percent at 4.7 microns for applied bias voltages between 3 and 5 V. The product of quantum efficiency and photoelectric gain, etaG, increases from 0.3 to 2.5 as the voltage increases from 3 to 5 V. Over this voltage range, the dark current increases from 8 to 120 e(-)s(-1) at a device temperature of 4.2 K and is under 70 e(-)s(-1) for all voltages at 2 K. Because of device gain, the effective dark current (equivalent photon rate) is less than 3 e(-)s(-1) under all operating conditions. The effective read noise (equivalent photon noise) is found to be less than 12 electrons under all operating conditions and for integration times between 0.05 and 100 seconds.

Herter, T.↗
NASA NTRS1990

Phase compatibilities of YBa2Cu3O(9-delta) type structure in quintenary systems Y-Ba-Cu-O-X (impurity)

Electrical transport properties of the oxidic high T(sub c) superconductors are significantly affected by the presence of minor amounts of various elements adventing as impurities, e.g., from the chemical environment during manufacturing. YBa2Cu3O(9-delta) is prone to an extinction of the superconductivity on (partial) substitution of all four elemental components. E.g., Pr (for Y), La (for Ba), Zn (for Cu) or peroxygroup (for O) substituents will alter some of the superconductivity preconditions, like mixed valence state in Cu3O7/O(9-delta) network or structural distortion of the network. Although various pseudoternary chemical equilibrium phase diagrams of the Y(O)-Ba(O)-Cu(O) system now are available, no consensus is generally shown, however, this is partly due to lack of compatible definitions of the equilibrium conditions. Less information is available about the phase compatibilities in the appropriate quaternary phase diagram (including oxygen) and virtually no information exists about any pentenary phase diagrams (including one impurity). Unfortunately, complexity of such systems, stemming both from number of quaternary or pentenary compounds and from visualizing the five-component phase system, limits this presentation to more or less close surroundings of the YBa2Cu3O(9-delta) type phase in appropriate pseudoquaternary or pseudopseudoternary diagrams, involving Y-Ba-Cu and O, O-CO2, alkaline metals, Mg and alkaline earths, and Sc and most of the 3-d and 4-f elements. The systems were investigated by means of x ray diffraction, neutron diffraction and chemical analytical methods on samples prepared by sol-gel technique from citrates. The superconductivity was characterized by measuring the diamagnetic susceptibility by SQUID.

Karen, P.↗