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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Investigation of Cleanliness Verification Techniques for Rocket Engine Hardware

Oxidizer propellant systems for liquid-fueled rocket engines must meet stringent cleanliness requirements for particulate and nonvolatile residue. These requirements were established to limit residual contaminants which could block small orifices or ignite in the oxidizer system during engine operation. Limiting organic residues in high pressure oxygen systems, such as in the Space Shuttle Main Engine (SSME), is particularly important. The current method of cleanliness verification for the SSME uses an organic solvent flush of the critical hardware surfaces. The solvent is filtered and analyzed for particulate matter followed by gravimetric determination of the nonvolatile residue (NVR) content of the filtered solvent. The organic solvents currently specified for use (1, 1, 1-trichloroethane and CFC-113) are ozone-depleting chemicals slated for elimination by December 1995. A test program is in progress to evaluate alternative methods for cleanliness verification that do not require the use of ozone-depleting chemicals and that minimize or eliminate the use of solvents regulated as hazardous air pollutants or smog precursors. Initial results from the laboratory test program to evaluate aqueous-based methods and organic solvent flush methods for NVR verification are provided and compared with results obtained using the current method. Evaluation of the alternative methods was conducted using a range of contaminants encountered in the manufacture of rocket engine hardware.

Fritzemeier, Marilyn L.↗
NASA NTRS1997

New Approaches to Waterproofing of Space Shuttle Insulating Materials

Future reusable space vehicles will be in service much more frequently than current space shuttles. Therefore, rapid reconditioning of spacecraft will be required. Currently, the waterproofing of space shuttles after each re-entry takes 72 hours and requires substantial labor. In addition, the currently used waterproofing reagent, DiMethylEthoxySilane (DMES), is considered toxic, and ethanol fumes are released during its hydrolytic activation. Consequently, a long time period, which is not acceptable for future operations, is needed to ensure that 0 the excess volatile compounds are removed before further maintenance of the space vehicle can be performed. The objective of this project was to assist NASA Ames in finding improved waterproofing systems by identifying suitable waterproofing agents that can be applied by vapor phase deposition and will be less toxic, bond more rapidly to the insulation material surface, and potentially have higher thermal stability than the DMES system. Several approaches to achieve faster waterproofing with less toxicity were assessed using the following alternatives: Reactive volatile compounds that are rapidly deposited by chemical bonding at the surface and leave no toxic volatiles. Reactive reagents that are the least toxic. Nonvolatile reagents that are very reactive and bond strongly to the insulating material surface. Three specific types of potential reagents were chosen for evaluation in this project: 1. Volatile reagents with Si-Cl functional groups for vapor deposition 2. Volatile reagents with Si-H functional groups for vapor deposition 3. Nonvolatile oligomeric or polymeric reactive siloxanes that are assumed to have higher thermal stability and/or strong bonding to the insulating material. The chemistry involved in the project was targeted at the generation of intermediates having reactive Si-OH bonds for the formation of either volatile species or polymeric species that bond rapidly to the surface and also cure rapidly. We focused on two chemical reactions@-hydrolysis of Si-Cl bonds and catalytic dehydrocoupling of Si-H bonds.

Blum, Yigal D.↗
NASA NTRS2001

Compact Holographic Data Storage

NASA's future missions would require massive high-speed onboard data storage capability to Space Science missions. For Space Science, such as the Europa Lander mission, the onboard data storage requirements would be focused on maximizing the spacecraft's ability to survive fault conditions (i.e., no loss in stored science data when spacecraft enters the 'safe mode') and autonomously recover from them during NASA's long-life and deep space missions. This would require the development of non-volatile memory. In order to survive in the stringent environment during space exploration missions, onboard memory requirements would also include: (1) survive a high radiation environment (1 Mrad), (2) operate effectively and efficiently for a very long time (10 years), and (3) sustain at least a billion write cycles. Therefore, memory technologies requirements of NASA's Earth Science and Space Science missions are large capacity, non-volatility, high-transfer rate, high radiation resistance, high storage density, and high power efficiency. JPL, under current sponsorship from NASA Space Science and Earth Science Programs, is developing a high-density, nonvolatile and rad-hard Compact Holographic Data Storage (CHDS) system to enable large-capacity, high-speed, low power consumption, and read/write of data in a space environment. The entire read/write operation will be controlled with electrooptic mechanism without any moving parts. This CHDS will consist of laser diodes, photorefractive crystal, spatial light modulator, photodetector array, and I/O electronic interface. In operation, pages of information would be recorded and retrieved with random access and high-speed. The nonvolatile, rad-hard characteristics of the holographic memory will provide a revolutionary memory technology meeting the high radiation challenge facing the Europa Lander mission. Additional information is contained in the original extended abstract.

Chao, T. H.↗
NASA NTRS2000

Implementation of Ferroelectric Memories for Space Applications

Ferroelectric random access semiconductor memories (FeRAMs) are an ideal nonvolatile solution for space applications. These memories have low power performance, high endurance and fast write times. By combining commercial ferroelectric memory technology with radiation hardened CMOS technology, nonvolatile semiconductor memories for space applications can be attained. Of the few radiation hardened semiconductor manufacturers, none have embraced the development of radiation hardened FeRAMs, due a limited commercial space market and funding limitations. Government funding may be necessary to assure the development of radiation hardened ferroelectric memories for space applications.

Philpy, Stephen C.↗
NASA NTRS2000

Advanced Compact Holographic Data Storage System

JPL, under current sponsorship from NASA Space Science and Earth Science Programs, is developing a high-density, nonvolatile and rad-hard Advanced Holographic Memory (AHM) system to enable large-capacity, high-speed, low power consumption, and read/write of data in a space environment. The entire read/write operation will be controlled with electro-optic mechanism without any moving parts. This CHDS will consist of laser diodes, photorefractive crystal, spatial light modulator, photodetector array, and I/O electronic interface. In operation, pages of information would be recorded and retrieved with random access and highspeed. The nonvolatile, rad-hard characteristics of the holographic memory will provide a revolutionary memory technology to enhance mission capabilities for all NASA's Earth Science Mission. In this paper, recent technology progress in developing this CHDS at JPL will be presented.

Chao, Tien-Hsin↗
NASA NTRS1993

A Magnetic Solid-State Storage Technology: Vertical Bloch Line Storage

No storage technology is known to exist today which simultaneously offers high-storage density, nonvolatility, and a solid-state form factor. For example, common random access memories are solid-state, but are volatile and typically offer modest density. Alternatively, mainstream magnetic disk and magnetic tape systems offer high storage density and nonvolatility, but are fundamentally not solid-state. A number of applications exist which would be suited well with high performance solid- state technology. NASA, for example, is beginning baseline solid-state recorders for upcoming space missions, such as the Cassini mission to Saturn.

Katti, R. R.↗
NASA NTRS1994

Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment

Thin film ferroelectric capacitors (10) comprising a ferroelectric film (18) sandwiched between electrodes (16 and 20) for nonvolatile memory operations are rendered more stable by subjecting the capacitors to an anneal following deposition of the top electrode (20). The anneal is done so as to form the interface (22) between the ferroelectric film and the top electrode. Heating in an air oven, laser annealing, or electron bombardment may be used to form the interface. Heating in an air oven is done at a temperature at least equal to the crystallization temperature of the ferroelectric film. Where the ferroelectric film comprises lead zirconate titanate, annealing is done at about 550.degree. to 600.degree. C. for about 10 to 15 minutes. The formation treatment reduces the magnitude of charge associated with the non-switching pulse in the thin film ferroelectric capacitors. Reduction of this charge leads to significantly more stable nonvolatile memory operations in both digital and analog memory devices. The formation treatment also reduces the ratio of change of the charge associated with the non-switching pulse as a function of retention time. These improved memory devices exhibit greater performance in retention and reduced fatigue in memory arrays.

Thakoor, Sarita↗
NASA NTRS2013

Wireless Chalcogenide Nanoionic-Based Radio-Frequency Switch

A new nonvolatile nanoionic switch is powered and controlled through wireless radio-frequency (RF) transmission. A thin layer of chalcogenide glass doped with a metal ion, such as silver, comprises the operational portion of the switch. For the switch to function, an oxidizable electrode is made positive (anode) with respect to an opposing electrode (cathode) when sufficient bias, typically on the order of a few tenths of a volt or more, is applied. This action causes the metal ions to flow toward the cathode through a coordinated hopping mechanism. At the cathode, a reduction reaction occurs to form a metal deposit. This metal deposit creates a conductive path that bridges the gap between electrodes to turn the switch on. Once this conductive path is formed, no further power is required to maintain it. To reverse this process, the metal deposit is made positive with respect to the original oxidizable electrode, causing the dissolution of the metal bridge thereby turning the switch off. Once the metal deposit has been completely dissolved, the process self-terminates. This switching process features the following attributes. It requires very little to change states (i.e., on and off). Furthermore, no power is required to maintain the states; hence, the state of the switch is nonvolatile. Because of these attributes the integration of a rectenna to provide the necessary power and control is unique to this embodiment. A rectenna, or rectifying antenna, generates DC power from an incident RF signal. The low voltages and power required for the nanoionic switch control are easily generated from this system and provide the switch with a novel capability to be operated and powered from an external wireless device. In one realization, an RF signal of a specific frequency can be used to set the switch into an off state, while another frequency can be used to set the switch to an on state. The wireless, miniaturized, and nomoving- part features of this switch make it suitable for applications such as integration into garments, RFID (radio-frequency identification) tags, and conformal structures (e.g., aircraft wings, sounding rockets contours, etc). In the case of RFID tags the innovation will provide countermeasures to attempts for identity theft and other uninvited attempts for retrieval of information. It could also be applicable to the automotive industry as well as the aerospace industry for collision avoidance and phased array radar systems, respectively

Nessel, James↗
DOE OSTI2025

Understanding Reliability Trade-Offs in 1T-nC and 2T-nC FeRAM Designs

Ferroelectric random access memory (FeRAM) is a promising candidate for energy-efficient nonvolatile memory, particularly for logic-in-memory and compute-in-memory (CIM) applications. Among the available cell architectures, One-Transistor–n-Capacitor (1T-nC) and two-transistor–n-capacitor (2T-nC) FeRAMs each offer distinct trade-offs in density, scalability, and reliability. In this work, we present a comparative study of these two architectures under both dimensional scaling ( XY/Z shrinkage) and vertical integration (increasing stacked capacitors per cell). Using technology computer-aided design (TCAD) and circuit-level simulations, we analyze how scaling impacts ferroelectric capacitance, parasitic coupling, and floating-node (FN) dynamics, which together dictate sense margin (SM) and read stability. A key mitigation strategy—floating unselected capacitors—is applied to both architectures, effectively decoupling the SM from the number of stacked capacitors and enabling tractable analysis across scaling regimes. Results show that 1T-nC suffers more from charge sharing with the bitline (BL), while 2T-nC benefits from transistor isolation and stronger low-voltage sensing at the cost of increased area. By systematically evaluating these behaviors across scaling directions, this work establishes the reliability trade-offs of 1T-nC and 2T-nC cells and provides design guidelines for high-density, vertically integrated FeRAM systems.

1T-nC↗
DOE OSTI2025

Effect of Gamma Radiation on TaOₓ ECRAM

Electrochemical random access memory (ECRAM) is an emerging three-terminal nonvolatile memory (NVM) with highly controllable channel conductance which is promising for use as an analog memory (or synapse) in analog in-memory computing (IMC) systems. Energy-efficient analog IMC computing is particularly desirable for power-constrained, high-radiation environments such as satellites. However, little is known about the suitability of ECRAM for use in a total ionizing dose (TID) environment. Here, this work investigates the effect of Co-60 gamma radiation on the channel conductance and noise—two properties critical for analog IMC systems—of a TaO x -based ECRAM up to 17.3 Mrad(SiO 2 ) for both low- and high-channel-conductance state devices. A transient increase in conductance is observed in response to radiation which consists of two elements: an immediate increase in conductivity due to photocurrent and a secondary increase in conductivity, which has a slower rise and saturation and can persist for hours after exposure. This secondary, persistent photoconductivity is attributed to charging caused by hole trapping. These transient effects would not likely occur in a space environment due to the low dose rate compared with this experiment. No permanent change is found in the low conductance state (LCS) following exposure and the minor shift in the high conductance change would be less significant than the regular retention decay in this state. A permanent increase in the random telegraph noise is observed, possibly due to increased traps created in the channel. This work demonstrates that TaO x -based ECRAM is suitable for use in spaceborne analog IMC systems that are subject to significant TID.

ECRAM↗
DOE OSTI2025

A Study on the Impact of Temperature-Dependent Ferroelectric Switching Behavior in 3D Memory Architecture

The flourishing development of neural networks that require exponentially growing amounts of data has presented an elevated demand for memory footprint. To address this, researchers have been exploring hardware accelerators with innovative memory architectures like 3D memory. These 3D memory architectures offer enhanced storage capacity and processing capabilities, at a cost of rising on-chip temperature during operation. Hafnium Zirconium Oxide (HZO) based Ferroelectric Random Access Memory (FeRAM) is a promising nonvolatile memory candidate in neural network hardware accelerators for its outstanding write performance and reliability. However, its implementation in the architecture regarding the temperature-dependent ferroelectric switching behavior has not been well studied. In this work, we study the thermal impacts on polarization switching through experimental devices and simulation results. We conduct the circuit and architecture-level simulations to showcase that one can exploit this temperature rise to reduce FeRAM's write voltage and write energy due to its unique temperature-activated polarization switching mechanisms. As the on-chip temperature increases to 351K (ambient temperature at 300K) due to neural network workloads, the access energy per bit can be reduced by 27.6% when a dynamic write voltage is applied.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin‐to‐Spin Conversion

Abstract The integration of 2D van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next‐generation spintronic memory devices. However, achieving high‐efficiency spin–orbit torque (SOT) switching of monolayer vdW magnets at room temperature poses a significant challenge, particularly without an external magnetic field. Here, it is shown field‐free, deterministic, and nonvolatile SOT switching of perpendicular magnetization in the monolayer, diluted magnetic semiconductor (DMS), Fe‐doped MoS 2 (Fe:MoS 2 ) at up to 380 K with a current density of ≈7 × 10 4 A cm −2 . The in situ doping of Fe into monolayer MoS 2 via chemical vapor deposition and the geometry‐induced strain in the crystal break the rotational switching symmetry in Fe:MoS 2 , promoting field‐free SOT switching by generating out‐of‐plane spins via spin‐to‐spin conversion. An apparent anomalous Hall effect (AHE) loop shift at a zero in‐plane magnetic field verifies the existence of z spins in Fe:MoS 2 , inducing an antidamping‐like torque that facilitates field‐free SOT switching. This field‐free SOT application using a 2D ferromagnetic monolayer provides a new pathway for developing highly power‐efficient spintronic memory devices.

Chen, Siwei [Department of Mechanical Engineering ↗
DOE OSTI2025

Atomistic Mechanisms of the Crystallographic Orientation‐Dependent Cu 1.8 S Conductive Channel Formation in Cu 2 S‐Based Memristors

Achieving multiple types of resistive switching in a single material with controlled ionic motion is a key challenge in neuromorphic computing, traditionally addressed by combining materials with distinct switching behaviors. Here, Cu 2-x S is identified as a promising candidate to overcome this limitation due to its hierarchical phase transitions. Using in situ biasing experiments, reversible and non-reversible phase transitions (and resistive switching) are demonstrated in γ-Cu 2 S by controlling the compliance current. The formation of parallel high-digenite Cu 1.8 S channels, orientated along the γ-Cu 2 S [201] crystallographic direction, drives the nonvolatile resistive switching. These channels emerge via an intermediate δ-Cu 2 S phase and are stabilized at room temperature by residual strains, alongside β-Cu 2 S phase. In conclusion, the work clarifies the complex, electrically triggered phase transformations in γ-Cu 2 S, and highlights the potential of Cu 2-x S as a versatile material for neuromorphic computing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Phase Transformation Driven by Oxygen Vacancy Redistribution as the Mechanism of Ferroelectric Hf 0.5 Zr 0.5 O 2 Fatigue

As a promising candidate for nonvolatile memory devices, the hafnia-based ferroelectric system has recently been a hot research topic. Although significant progress has been made over the past decade, the endurance problem is still an obstacle to its final application. In perovskite-based ferroelectrics, such as the well-studied Pb[Zr x Ti 1-x ]O 3 (PZT) family, polarization fatigue has been discussed within the framework of the interaction of charged defects (such as oxygen vacancies) with the moving domains during the switching process, particularly at the electrode-ferroelectric interface. Armed with this background, a hypothesis is set out to test that a similar mechanism can be in play with the hafnia-based ferroelectrics. The conducting perovskite La-Sr-Mn-O is used as the contact electrode to create La 0.67 Sr 0.33 MnO 3 / Hf 0.5 Zr 0.5 O 2 (HZO)/ La 0.67 Sr 0.33 MnO 3 capacitor structures deposited on SrTiO 3 -Si substrates. Nanoscale X-ray diffraction is performed on single capacitors, and a structural phase transition from polar o-phase toward non-polar m-phase is demonstrated during the bipolar switching process. The energy landscape of multiphase HZO has been calculated at varying oxygen vacancy concentrations. Based on both theoretical and experimental results, it is found that a polar to non-polar phase transformation caused by oxygen vacancy redistribution during electric cycling is a likely explanation for fatigue in HZO.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Giant Exfoliation Induced Magnetic Coercivity in Fe 3 GaTe 2

Permanent magnets with strong anisotropy and high coercivity underpin modern information and energy technologies, yet rare-earth-free alternatives remain limited. Here, we show that thickness engineering via mechanical exfoliation induces hard magnetic behavior in the van der Waals ferromagnet Fe 3 GaTe 2 . Bulk crystals exhibit Curie temperatures above 350 K but negligible room-temperature coercivity. When thinned below ∼100 nm, the coercive field is dramatically enhanced, reaching nearly 1 T at room temperature for in-plane fields—comparable to conventional hard magnets. Micromagnetic analysis reveals a crossover in magnetization reversal from domain-mediated processes in bulk samples to quasi-coherent rotation in thin flakes, driven by increased effective anisotropy and suppressed domain formation. This thickness-dependent transition enables tuning of magnetic hardness without chemical modification. Combined with high saturation magnetization and robust room-temperature performance, Fe 3 GaTe 2 emerges as a promising rare-earth-free material for spintronic applications. Its layered structure further allows integration into van der Waals heterostructures, where large in-plane coercivity can stabilize magnetic states against perturbations and interlayer coupling, offering potential for high-density nonvolatile memory and domain-wall-based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Dual-ion ECRAM as a stable and accurate analog synapse

Electrochemical random-access memory (ECRAM) works by tuning the bulk electronic conductance of functional materials via reversible, electrochemical insertion of ions, resulting in stable analog resistive switching, attractive for analog in-memory and neuromorphic computing. However, achieving fast programming for training and long retention for inference has been elusive. Protonic ECRAM demonstrates fast programming but insufficient retention, while oxygen-based ECRAM with excellent retention requires elevated programming temperatures. Cu-based ECRAM offers a compromise, with an activation energy (E A ) of ≈0.76 eV between protons (E A ≈ 0.4 eV) and oxygen (E A > 1 eV), enabling extensive retention and room temperature programming. Combining Cu 2+ ions with protons to form a dual-ion ECRAM, we demonstrate two distinct switching behaviors: fast switching at ≤5 V, (E A ≈ 0.45 eV) via protons, and nonvolatile, room temperature switching at ≥8 V, with E A ≈ 0.76 eV via Cu 2+ ions. In conclusion, the Cu-based state exhibits a wide conductance range, with excellent retention, low noise, and linear current-voltage behavior, achieving digital-equivalent ImageNet inference accuracy.

analog in-memory computing↗
DOE OSTI2025

Polarization-Controlled Structural Modulation in the Single Atomic Layer at the PbZr 0.2 Ti 0.8 O 3 /LaNiO 3 Interface

Conductivity modulation via ferroelectric polarization coupling with LaNiO 3 (LNO) is demonstrated at an epitaxial ferroelectric–LNO interface. Conductivity measurements, varying the thickness of the LNO channel, show that this phenomenon is confined to a few atomic layers at the interface. Combining in situ biasing and off-axis holography, we mapped out electrostatic potentials at the PbZr 0.2 Ti 0.8 O 3 (PZT)/LNO/SrTiO 3 (STO) heterostructure upon polarization switching. Using aberration-corrected STEM, the interfacial atomic structures were investigated for the two different PZT polarization states. Polarization in PZT induces a significant change in the in-plane O–Ni–O bond angles, with a 37° modulation in the topmost 1 or 2 LNO unit cells, driven by strain in the oxygen sublattice for the two opposite polarization directions in PZT. Both oxygen and cation sublattices exhibit strain responses exceeding 10% upon switching. This atomic-layer structural modulation highlights a mechanism for functional oxide heterostructure development, offering pathways for advancements in nonvolatile memory, sensors, and energy-efficient transistors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Ferroelectricity in Atomic Layer Deposited Wurtzite Zinc Magnesium Oxide Zn 1– x Mg x O

Conformal deposition of wurtzite ferroelectrics, which is needed for their use in scaled nonvolatile memories, is challenging using current physical vapor deposition techniques. To overcome the conformality barrier, this work demonstrates ferroelectricity in wurtzite Zn 1− x Mg x O thin films prepared by plasma-enhanced atomic layer deposition, which is a non-line-of-sight deposition method. Films ranging in composition from x = 0.00 to x = 0.58 are predominantly wurtzite phase and exhibit a (0001)-texture. Increasing the magnesium content decreases the c/a ratio, increases the optical bandgap energy, increases the piezoelectric response, and enables polarization reversal. Clear polarization switching is demonstrated in 50 nm thick Zn 1− x Mg x O films by piezoresponse force microscopy in compositions containing x = 0.46 and x = 0.58.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗