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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS1961

Infrared and Reflected Solar Radiation Measurements from the TIROS 2 Meteorological Satellite

TIROS II contains instrumentation for measuring infrared and reflected solar radiation from the earth and its atmosphere. A medium resolution scanning radiometer and a low resolution non-scanning radiometer are employed. The satellite's spin provides the scan line of the medium resolution radiometer which is then advanced by the orbital motion. The spatial resolution is about 40 miles square when the earth directly beneath the satellite is viewed. The five channels employ bolometer detectors and filters to limit the spectral responses to five bands: 6 to 6.5 microns, 8 to 12 microns, 0.2 to 6 microns, 8 to 30 microns, and 0.55 to 0.75 microns. These five bands study, respectively: radiation in the water vapor absorption band; day and nighttime cloud cover; albedo; thermal radiation; and visual maps for comparison with satellite vidicon pictures. The low resolution non-scanning radiometer measures the earth's black-body temperature and albedo. Its field when viewing directly below is a circle of 450 miles diameter, covering part of each frame from the wide-field television camera. This radiometer consists of two thermistors, each in the apex of a reflective cone which provides optical gain. One thermistor is black and responds to both thermal and reflected solar radiation. The second responds to thermal but reflects solar radiation. The design, calibration, performance, and data reduction for both systems are discussed herein.

Bandeen, W. R.↗
NASA NTRS1996

High-Procession Eye Tracking Using Fundus Images

Fundus images provide high optical gain for eye movement tracking, i.e. large image displacements occur as a result of small eye rotations. Subpixel registration techniques can provide resolution better than 1 arc minute using images acquired with a CCD camera. Ocular torsion may also be estimated, with a precision of approximately 0.1 degree. This talk will discuss the software algorithms used to attain this performance.

Mulligan, Jeffrey B.↗
NASA NTRS2002

Diode-Laser Pumped Far-Infrared Local Oscillator Based on Semiconductor Quantum Wells

The contents include: 1) Tetrahertz Field: A Technology Gap; 2) Existing THZ Sources and Shortcomings; 3) Applications of A THZ Laser; 4) Previous Optical Pumped LW Generations; 5) Optically Pumped Sb based Intersubband Generation Whys; 6) InGaAs/InP/AlAsSb QWs; 7) Raman Enhanced Optical Gain; 8) Pump Intensity Dependence of THZ Gain; 9) Pump-Probe Interaction Induced Raman Shift; 10) THZ Laser Gain in InGaAs/InP/AlAsSb QWs; 11) Diode-Laser Pumped Difference Frequency Generation (InGaAs/InP/AlAsSb QWs); 12) 6.1 Angstrom Semiconductor Quantum Wells; 13) InAs/GaSb/AlSb Nanostructures; 14) InAs/AlSb Double QWs: DFG Scheme; 15) Sb-Based Triple QWs: Laser Scheme; and 16) Exciton State Pumped THZ Generation. This paper is presented in viewgraph form.

Kolokolov, K.↗
NASA NTRS1998

Modeling and Simulation of Semiconductor Quantum Well Structures and Lasers

In this talk I will cover two aspects of modeling and simulation efforts at NASA Ames Research Center. In the quantum well structure simulation, we typically start from the quantum mechanical calculation of the quantum well structures for the confined/and unconfined eigen states and functions. A bandstructure calculation of the k*p type is then performed for the confined valence states. This information is then used to computer the optical gain and refractive index of the quantum well structures by solving the linearized multiband semiconductor Bloch equations with the many-body interactions included. In our laser simulation, we typically solve the envelope equations for the laser field in space-time domain, coupled with a reduced set of material equations using the microscopic calculation of the first step. Finally I will show some examples of both aspects of simulation and modeling.

Ning, Cun-Zheng↗
NASA NTRS1998

Computational Modeling of Vertical-Cavity Surface-Emitting Lasers

Vertical-Cavity Surface-Emitting Lasers (VCSELs) have become increasingly important for many applications, such as optical interconnects and optical data storages. In many applications, critical requirements are very often high beam quality and/or high output powers. To help the design and optimization of VCSELs for such applications, it is essential to have a simulation model that includes the time evolution of the transverse space dependence of the hewn. Such models allow arbitrary transverse profiles of laser intensity or carrier density to develop in time without any a priori assumption about the number and types of transverse modes. In addition, extensive research in the past has shown that many-body effects are important in influencing the optical gain and the refractive index of semiconductor quantum wells. It is thus important to include the key many-body effects in simulation models for semiconductor lasers. A computational model, called the Maxwell-Effective Bloch Equations (MEBE) was developed recently that simulates the above features and effects. This model combines the space-time resolution with microscopic many-body effects in a way that is both accurate enough and computationally manageable. This model has been used to simulate edge-emitting high power lasers recently. A new finite-difference algorithm has been developed for solving these equations and will be shown in the presentation. That algorithm will be used to calculate the detailed time evolution of the transverse mode profiles of VCSELs. The VCSELs are based on InGaAs/GaAs quantum well structures. Effects of pumping current and refractive index profiles will be investigated in detail. The simulation results will be compared with other results the use the rate-equation model.

Goorjian, Peter M.↗
NASA NTRS1998

Computational Nonlinear of Vertical-Cavity Surface-Emitting Lasers

Vertical-Cavity Surface-Emitting Lasers (VCSELs) have become increasingly important for many applications, such as optical interconnects and optical data storages. In many applications, critical requirements are very often high beam quality and/or high output powers. To help the design and optimization of VCSELs for such applications, it is essential to have a simulation model that includes the time evolution of the transverse space dependence of the beam. Such models allow arbitrary transverse profiles of laser intensity or carrier density to develop in time without any a priori assumption about the number and types of transverse modes. In addition, extensive research in the past has shown that many-body effects are important in influencing the optical gain and the refractive index of semiconductor quantum wells. It is thus important to include the key many-body effects in simulation models for semiconductor lasers. A computational model, called the Maxwell-Effective Bloch Equations (MEBE) was developed recently that simulates the above features and effects. This model combines the space-time resolution with microscopic many-body effects in a way that is both accurate enough and computationally manageable. This model has been used to simulate edge-emitting high power lasers recently. A new finite-difference algorithm has been developed for solving these equations and will be shown in the presentation. That algorithm will be used to calculate the detailed time evolution of the transverse mode profiles of VCSELs. The VCSELs are based on InGaAs/GaAs quantum well structures. Effects of pumping current and refractive index profiles will be investigated in detail. The simulation results will be compared with other results the use the rate-equation model.

Goorjian, Peter M.↗
NASA NTRS1999

Validity of the Relation Between Spontaneous and Stimulated Emissions in Semiconductors

The Einstein relation between spontaneous emission and absorption was originally derived for a system consists of a two-state subsystem representing matter and harmonic fields representing radiation. The derivation is based on the detailed balance between these two subsystems under thermal equilibrium. The relationship was later investigated in connection with the interactions between radiation field and solids or semiconductors. The simple derivation dose not hold for semiconductors in general. In certain limiting cases, simple relation was obtained. The validity of this relation is important not only because of its fundamental role connecting two of the most fundamental optical processes in semiconductors, but mostly also because of its wide use as a practical method to measure the optical gain of a semiconductor. The validity of this relation for semiconductors has been an issue of controversial for some time. In this paper we numerically examine the validity of this relationship for several different lineshapes including Lorentzian, Gaussian, Sech, and a convoluted double Lorentzians (CDL). We find out that at relatively low density above transparency level, all first three lineshapes violate the Einstein relation. The relation is approximately valid at high density. At very high density, the validity of the Einstein relation holds well for all three lineshapes. The reason behind this observation is explained. The CDL lineshape has been shown analytically to obey the Einstein relationship previously. We show that for a 2D semiconductor with parabolic bands, the CDL lineshape can be integrated analytically. This analytic lineshape is compared with a simple Lorentzian lineshape.

Ning, Cun-Zheng↗
NASA NTRS1993

Very Long Wavelength InxGal-xAs/GaAs Quantum Well Infrared Photodetectors

We demonstrate the first long-wavelength (=20) quantum well infrared photodetector using non-lattice matched InGaAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system.

long-wavelength quantum non-lattice GaAs detectors↗
NASA NTRS2019

High Performance GaN/AlGaN Ultraviolet Avalanche Photodiode Detector Technologies

Detection of ultraviolet (UV) bands provides distinct advantages for NASA, defense, and commercial applications, including increased spatial resolution, small pixel sizes, and large format arrays. AlxGa1-xN semiconductor alloys have attracted great interest for detection in the UV spectral region because of their potential for high optical gain, high sensitivity, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs that demonstrate consistent and reliable UV-APD performance and operation. For these UV detectors we have measured gains of above 5×10(exp 6) and high quantum efficiencies at ~350 nm enabled by a strong avalanche multiplication process. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized GaN/AlGaN UV-APD material growth and doping parameters. The high performance, variable-area GaN/AlGaN UV-APD detectors and arrays can be customized to a wide variety of sizes including large-area formats to enable sensing and high-resolution detection over UV bands of interest.

Sood, Ashok K.↗
NASA NTRS2019

GaN/AlGaN Avalanche Photodiode Detectors for High Performance Ultraviolet Sensing Applications

The shorter wavelengths of the ultraviolet (UV) band enable detectors to operate with increased spatial resolution, variable pixel sizes, and large format arrays, benefitting a variety of NASA, defense, and commercial applications. AlxGa1-xN semiconductor alloys, which have attracted much interest for detection in the UV spectral region, have been shown to enable high optical gains, high sensitivities with the potential for single photon detection, and low dark current performance in ultraviolet avalanche photodiodes (UV-APDs). We are developing GaN/AlGaN UV-APDs with large pixel sizes that demonstrate consistent and uniform device performance and operation. These UV-APDs are fabricated through high quality metal organic chemical vapor deposition (MOCVD) growth on lattice-matched, low dislocation density GaN substrates with optimized material growth and doping parameters. The use of these low defect density substrates is a critical element to realizing highly sensitive UV-APDs and arrays with suppressed dark current under high electric fields.Optical gains greater than 5X10 (exp 6) with enhanced quantum efficiencies over the 350-400 nm spectral range have been demonstrated, enabled by a strong avalanche multiplication process. Furthermore, we are developing 6X6 arrays of devices to test high gain UV-APD array performance at ~355 nm. These variable-area GaN/AlGaN UV-APD detectors and arrays enable advanced sensing performance over UV bands of interest with high resolution detection for NASA Earth Science applications.

Sood, Ashok K.↗
DOE OSTI2022

Raman gain control in optical fibers with orbital-angular-momentum-induced chirality of light

Stimulated Raman scattering is a particularly robust nonlinearity, occurring in virtually every material because its spectral linewidth and associated frequency shift do not typically depend on phases or directions (i.e. wavevectors) of the interacting light beams. In amorphous materials such as glass fibers, Raman bandwidths are large, enabling its use as a broadband gain element. This ubiquity makes it a versatile means for achieving optical amplification or realizing lasers over a large range of pulsewidths at user-defined colors. However, this ease of deploying the effect also presents itself as a stubborn source of noise in fiber-based quantum sources or parasitic emission in fiber lasers. Here, we show that orbital angular momentum carrying light beams experiencing spin-orbit interactions yield novel phase-matching criteria for Raman scattering. This enables tailoring its spectral shape (by over half the Raman shift in a given material) as well as strength (by ∼ 100×) simply by controlling light’s topological charge – a capability of utility across the multitude of applications where modulating Raman scattering is desired.

Liu, Xiao (ORCID:000000032239762X)↗
DOE OSTI2020

Gain balanced nonlinear optical interferometer

A nonlinear fiber interferometer is disclosed suitable for fiber sensor and other applications. A first nonlinear fiber section amplifies probe and conjugate sidebands of a pump through four-wave mixing. A second section introduces a phase shift to be measured, for example from a sensor. A third nonlinear fiber section amplifies with phase-sensitive gain to increase signal-to-noise ratio. Based on phase-sensitive output power of probe and/or conjugate components, the phase shift can be measured. Superior performance can be obtained by balancing gain between the (first and third) nonlinear sections. Non-fiber, for example photonic integrated circuit, embodiments are disclosed. Differential sensing, alternative detection schemes, sensing applications, associated methods, and other variations are disclosed.

42 ENGINEERING↗
DOE OSTI2022

Gain balanced nonlinear optical interferometer

A nonlinear fiber interferometer is disclosed suitable for fiber sensor and other applications. A first nonlinear fiber section amplifies probe and conjugate sidebands of a pump through four-wave mixing. A second section introduces a phase shift to be measured, for example from a sensor. A third nonlinear fiber section amplifies with phase-sensitive gain to increase signal-to-noise ratio. Based on phase-sensitive output power of probe and/or conjugate components, the phase shift can be measured. Superior performance can be obtained by balancing gain between the (first and third) nonlinear sections. Non-fiber, for example photonic integrated circuit, embodiments are disclosed. Differential sensing, alternative detection schemes, sensing applications, associated methods, and other variations are disclosed.

Lukens, Joseph M.↗
DOE OSTI2023

Gain balanced nonlinear optical interferometer

A nonlinear fiber interferometer is disclosed suitable for fiber sensor and other applications. A first nonlinear fiber section amplifies probe and conjugate sidebands of a pump through four-wave mixing. A second section introduces a phase shift to be measured, for example from a sensor. A third nonlinear fiber section amplifies with phase-sensitive gain to increase signal-to-noise ratio. Based on phase-sensitive output power of probe and/or conjugate components, the phase shift can be measured. Superior performance can be obtained by balancing gain between the (first and third) nonlinear sections. Non-fiber, for example photonic integrated circuit, embodiments are disclosed. Differential sensing, alternative detection schemes, sensing applications, associated methods, and other variations are disclosed.

Lukens, Joseph M.↗
NASA NTRS1997

An All-Optical Microwave Mixer with 8db RF Gain

An all-optical microwave mixer with an 8dB RF gain is demonstrated by using a semiconductor optical amplifier (SOA). 6GHz RF signal on a 1312 nm optical carrier is up-converted and down-converted to 1GHZ and 11 GHz by a 5GHz local oscillation (LO) signal on a 1320 nm optical carrier. Such a carrier could readily extend to millimeter wave range.

microwave mixer fiberoptics fiber optic transmissi↗
DOE OSTI2020

1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization

Abstract This work reports on an investigation of the optical feedback in an InAs/InGaAs passively mode-locked quantum dot (QD) laser epitaxially grown on silicon. Under the stably-resonant optical feedback condition, experiments demonstrate that the radio-frequency linewidth is narrowed whatever the bias voltage applied on the saturable absorber (SA) is; on the other hand, the effective linewidth enhancement factor of the device increases with the reverse bias voltage on the SA, hence it is observed that such an increase influences the mode-locking dynamic and the stability of device under optical feedback. This work gives insights for stabilizing epitaxial QD mode-locked lasers on silicon which is meaningful for their applications in future large-scale silicon electronic and photonic applications requiring low power consumption as well as for high-speed photonic analog-to-digital conversion, intrachip/interchip optical clock distribution and recovery.

Dong, Bozhang (ORCID:0000000158266723)↗