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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Scaling device for photographic images

A scaling device projects a known optical pattern into the field of view of a camera, which can be employed as a reference scale in a resulting photograph of a remote object, for example. The device comprises an optical beam projector that projects two or more spaced, parallel optical beams onto a surface of a remotely located object to be photographed. The resulting beam spots or lines on the object are spaced from one another by a known, predetermined distance. As a result, the size of other objects or features in the photograph can be determined through comparison of their size to the known distance between the beam spots. Preferably, the device is a small, battery-powered device that can be attached to a camera and employs one or more laser light sources and associated optics to generate the parallel light beams. In a first embodiment of the invention, a single laser light source is employed, but multiple parallel beams are generated thereby through use of beam splitting optics. In another embodiment, multiple individual laser light sources are employed that are mounted in the device parallel to one another to generate the multiple parallel beams.

Rivera, Jorge E.↗
NASA NTRS2010

NASA Electronic Parts and Packaging (NEPP) Program - Update

This slide presentation reviews the goals and mission of the NASA Electronic Parts and Packaging (NEPP) Program. The NEPP mission is to provide guidance to NASA for the selection and application of microelectronics technologies, to improve understanding of the risks related to the use of these technologies in the space environment and to ensure that appropriate research is performed to meet NASA mission assurance needs. The program has been supporting NASA for over 20 years. The focus is on the reliability aspects of electronic devices. In this work the program also supports the electronics industry. There are several areas that the program is involved in: Memories, systems on a chip (SOCs), data conversion devices, power MOSFETS, power converters, scaled CMOS, capacitors, linear devices, fiber optics, and other electronics such as sensors, cryogenic and SiGe that are used in space systems. Each of these area are reviewed with the work that is being done in reliability and effects of radiation on these technologies.

LaBel, Kenneth A.↗
NASA NTRS1994

Silicon device performance measurements to support temperature range enhancement

Silicon based power devices can be used at 200 C. The device measurements made during this program show a predictable shift in device parameters with increasing temperature. No catastrophic or abrupt changes occurred in the parameters over the temperature range. As expected, the most dramatic change was the increase in leakage currents with increasing temperature. At 200 C the leakage current was in the milliAmp range but was still several orders of magnitude lower than the on-state current capabilities of the devices under test. This increase must be considered in the design of circuits using power transistors at elevated temperature. Three circuit topologies have been prototyped using MOSFET's and IGBT's. The circuits were designed using zero current or zero voltage switching techniques to eliminate or minimize hard switching of the power transistors. These circuits have functioned properly over the temperature range. One thousand hour life data have been collected for two power supplies with no failures and no significant change in operating efficiency. While additional reliability testing should be conducted, the feasibility of designing soft switched circuits for operation at 200 C has been successfully demonstrated.

Bromstead, James↗
NASA NTRS1980

JANTX2N2484 transistor

Report evaluates effects of power and temperature overstress on Raytheon and Teledyne devices. Power overstress produced few failures. Both lots of devices exceeded 50 percent failure at 250 deg C. Failure modes are evaluated.

Source record↗
NASA NTRS1977

Traveling-wave tube reliability estimates, life tests, and space flight experience

Infant mortality, useful life, and wearout phase of twt life are considered. The performance of existing developmental tubes, flight experience, and sequential hardware testing are evaluated. The reliability history of twt's in space applications is documented by considering: (1) the generic parts of the tube in light of the manner in which their design and operation affect the ultimate reliability of the device, (2) the flight experience of medium power tubes, and (3) the available life test data for existing space-qualified twt's in addition to those of high power devices.

Lalli, V. R.↗
NASA NTRS2014

High Input Voltage Discharge Supply for High Power Hall Thrusters Using Silicon Carbide Devices

A power processing unit for a 15 kW Hall thruster is under development at NASA Glenn Research Center. The unit produces up to 400 VDC with two parallel 7.5 kW discharge modules that operate from a 300 VDC nominal input voltage. Silicon carbide MOSFETs and diodes were used in this design because they were the best choice to handle the high voltage stress while delivering high efficiency and low specific mass. Efficiencies in excess of 97 percent were demonstrated during integration testing with the NASA-300M 20 kW Hall thruster. Electromagnet, cathode keeper, and heater supplies were also developed and will be integrated with the discharge supply into a vacuum-rated brassboard power processing unit with full flight functionality. This design could be evolved into a flight unit for future missions that requires high power electric propulsion.

Electric Propulsion↗
NASA NTRS1985

Cryogenic insulation strength and bond tester

A method and apparatus for testing the tensile strength and bonding strength of sprayed-on foam insulation attached to metal cryogenic fuel tanks is described. A circular cutter is used to cut the insulation down to the surface of the metal tank to form plugs of the insulation for testing in situ on the tank. The apparatus comprises an electromechanical pulling device powered by a belt battery pack. The pulling device comprises a motor driving a mechanical pulling structure comprising a horizontal shaft connected to two bell cracks which are connected to a central member. When the lower end of member is attached to a fitting, which in turn is bonded to a plug, a pulling force is exerted on the plug sufficient to rupture it. The force necessary to rupture the plug or pull it loose is displayed as a digital read-out.

Schuerer, P. H.↗
NASA NTRS2009

Electric propulsion device for high power applications

An electric propulsion device is disclosed having an anode and a cathode. The propulsion device includes a discharge annulus having the anode adjacent an end region thereof. At least one inlet aperture is adjacent the anode, the aperture(s) having propellant gas flow therethrough into the discharge annulus. The propellant gas has an ionization potential. Opposed, dielectric walls define the annulus, with at least one of the opposed dielectric walls having pores therein, the pores having cooling gas flow therethrough into the discharge annulus and substantially adjacent the opposed dielectric wall(s). The cooling gas has an ionization potential higher than the ionization energy of the propellant gas. The cooling gas is adapted to substantially prevent at least one of secondary electron emission and sputtering of the dielectric walls.

Roy, Subrata↗
NASA NTRS1998

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗
NASA NTRS2006

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗
NASA NTRS1996

Gallium phosphide energy converters

Betavoltaic power supplies based on gallium phosphide can supply long term low-level power with high reliability. Results are presented for GaP devices powered by Ni-63 and tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/cm(exp 2) have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. A small demonstration system has been assembled that generates and stores enough electricity to light up an LED.

Sims, P. E.↗
NASA NTRS2000

Programmable Logic Application Notes

This column will be provided each quarter as a source for reliability, radiation results, NASA capabilities, and other information on programmable logic devices and related applications. This quarter will continue a series of notes concentrating on analysis techniques with this issue's section discussing: Digital Timing Analysis Tools and Techniques. Articles in this issue include: SX and SX-A Series Devices Power Sequencing; JTAG and SXISX-AISX-S Series Devices; Analysis Techniques (i.e., notes on digital timing analysis tools and techniques); Status of the Radiation Hard reconfigurable Field Programmable Gate Array Program, Input Transition Times; Apollo Guidance Computer Logic Study; RT54SX32S Prototype Data Sets; A54SX32A - 0.22 micron/UMC Test Results; Ramtron FM1608 FRAM; and Analysis of VHDL Code and Synthesizer Output.

Katz, Richard↗
NASA NTRS2016

Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.

Ikpe, Stanley A.↗
NASA NTRS1989

Design of a thrust stand for high power electric propulsion devices

A thrust stand for use with high power electric propulsion devices was designed and tested. The thrust stand was specifically tailored to the needs of a 100 to 250 kW magnetoplasmadynamic (MPD) thruster program currently in progress at the NASA Lewis Research Center. The thrust stand structure was built as an inverted pendulum arrangement, supported at the base by water-cooled electrical power flexures. Thrust stand tares due to thruster discharge current were demonstrated to be negligible. Tares due to an applied field magnet current, after considerable effort, were reduced to less than 3.0 percent of measured thrust. These tares, however, could be determined independently and subtracted from the indicated thrust measurement. A detailed description is given for the thrust stand design and operation with a 100 kW class MPD device. Other thrust stand tares due to vibration and thermal effects are discussed, along with issues of accuracy and repeatability.

Haag, Thomas W.↗
NASA NTRS1989

Design of a thrust stand for high power electric propulsion devices

A thrust stand for use with high power electric propulsion devices has been designed and tested. The thrust stand was specifically tailored to the needs of a 0.1 to 0.25 MW magnetoplasmadynamic (MPD) thruster program currently in progress at the NASA Lewis Research Center. The thrust stand structure was built as an inverted pendulum arrangement, supported at the base by water-cooled electrical power flexures. Thrust stand tares due to thruster discharge current were demonstrated to be negligible. Tares due to an applied field magnet current, after considerable effort, were reduced to less than 3.0 percent of measured thrust. These tares, however, could be determined independently and subtracted from the indicated thrust measurement. The paper gives a detailed description of the thrust stand design and operation with a 0.1 MW class MPD device. Other thrust stand tares due to vibration and thermal effects are discussed, along with issues of accuracy and repeatability.

Haag, Thomas W.↗
NASA NTRS1996

High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.

Neudeck, Philip G.↗
NASA NTRS2003

Carbon Nanotubes as Resonators for RF Spectrum Analyzers

Electromechanical resonators of a proposed type would comprise single carbon nanotubes suspended between electrodes (see Figure 1). Depending on the nanotube length, diameter, and tension, these devices will resonate at frequencies in a range from megahertz through gigahertz. Like the carbon-nanotube resonators described in the preceding article, these devices will exhibit high quality factors (Q values), will be compatible with integration with electronic circuits, and, unlike similar devices made from silicone and silicone carbide, will have tunable resonant frequencies as high as several GHz. An efficient electromechanical transduction method for the carbon nanotube resonators is provided by the previously observed variation of carbon nanotube length with charge injection. It was found that injection of electrons or holes, respectively, lengthens or shortens carbon nanotubes, by amounts of the order of a percent at bias levels of a few volts. The charge-dependent length change also enables a simple and direct means of tuning the resonant frequency by varying the DC bias and hence the tension along the tube, much like tuning a guitar string. In its basic form, the invention is a tunable high-Q resonator based on a suspended carbon nanotube bridge with attached electrodes (see Figure 1). An applied DC bias controls the tension and thus the frequency of resonance. If one were to superimpose a radio-frequency (RF) bias on the DC bias, then the resulting rapid variation in tension or length would set the tube into vibration. If, on the other hand, the carbon nanotube were to be set into vibration by interaction between an incident RF electric field and electric charges in the nanotube, then the vibration would give rise to an RF signal output that is proportional to the RF amplitude at the resonance frequency. Because the transduction mechanism is extremely sensitive and the active volume is only a few nanometers in diameter, this device is not well suited for use as a microwave power device. Instead, this carbon nanotube mechanical resonator would be useful primarily as part of a highly precise, sensitive, frequency-selective detector. An array of such devices featuring nanotubes of different lengths (and thus different frequencies) could be made to operate as a highspeed spectrum analyzer (see Figure 2)

Hunt, Brian↗
NASA NTRS2010

Re-Verification of the IRHN57133SE and IRHN57250SE for Single Event Gate Rupture and Single Event Burnout

The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information.This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR(the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Single Event Gate Rupture (SEGR)↗