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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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87 records · Page 5
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Thermal and radiation response of 4H–SiC Schottky diodes with direct-write electrical contacts

In this work, a high-sensitivity 4H–SiC temperature sensor and an alpha detector have been fabricated using additively printed metal contacts. The surface morphology and electrical conductivity of the printed electrodes were established prior to Schottky diode development. 4H–SiC Schottky diodes with direct-write printed silver contacts on the 5 μ m-thick epilayer on 4H–SiC were characterized electrically in terms of the forward and reverse current–voltage and high-frequency capacitance–voltage characteristics. Furthermore, the turn-on voltage of the Schottky diodes, as established from the forward current–voltage characteristics measured up to a temperature of 400 °C, showed a linear temperature dependence. Schottky diodes with direct-write printed Ag electrodes were able to measure alpha particles emitted from Americium-241. The high temperature and radiation response of the Schottky diodes show their suitability for multi-modal sensor fusion on the 4H–SiC platform for harsh environment applications.

42 ENGINEERING↗
NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗
NASA NTRS1957

Concluding Report of Free-Spinning, Tumbling, and Recovery Characteristics of a 1/18-Scale Model of the Ryan X-13 Airplane, Coord. No. AF-199

An investigation has been completed in the Langley 20-foot free-spinning tunnel on a l/18-scale model of the Ryan X-13 airplane to determine its spin, recovery, and tumbling characteristics, and to determine the minimum altitude from which a belly landing could be made in case of power failure in hovering flight. Model spin tests were conducted with and without simulated engine rotation. Tests without simulated engine rotation indicated two types of spins: one, a slightly oscillatory flat spin; and the other, a violently oscillatory spin. Tests with simulated engine rotation indicated that spins to the left were fast rotating and steep and those to the right were slow rotating and flat. The optimum technique for recovery is reversal of the rudder to against the spin and simultaneous movement of the ailerons to full with the spin followed by movement of the elevators to neutral after the spin rotation ceases. Tumbling tests made on the model indicated that although the Ryan X-13 airplane will not tumble in the ordinary sense (end-over-end pitching motion), it may instead tend to enter a wild gyrating'motion. Tests made to simulate power failure in hovering flight by dropping the model indicated that the model entered what appeared to be a right spin. An attempt should be made to stop this motion immediately by moving the rudder to oppose the rotation (left pedal), moving the ailerons to with the spin (stick right), and moving the stick forward after the spin rotation ceases to obtain flying speed for pullout. The minimum altitude required for a belly landing in case of power failure in hovering flight was indicated to be about 4,200 feet.

Bowman, James S., Jr.↗
DOE OSTI2024

Planarization of p -GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

The large polarization barriers between the quantum wells and quantum barriers in long-wavelength GaN-based light-emitting diodes (LEDs) inhibit their performance by requiring excess driving voltages to reach standard operating current densities. Lateral injection of carriers directly into quantum wells is required to circumvent this issue. V-defects are naturally occurring inverted hexagonal defects with semipolar {$10\bar{1}1$}-plane sidewalls generated on surface depressions from threading dislocations. LEDs engineered to intentionally generate V-defects below the active region of the LED can achieve lateral carrier injection through the V-defect sidewalls and have already been able to demonstrate world record wall-plug efficiencies for LEDs in the green-red wavelengths. V-defects can be enlarged during kinetically limited growth where the growth rate of the c-plane GaN is faster than that of their sidewalls, leaving them unfilled. We report on the metal organic chemical vapor deposition growth conditions required to fill in V-defects with p-GaN during epitaxial growth of the LED post the active region. Circular transmission length measurements of Pd/Au contacts processed on p-GaN surfaces with various amounts of unfilled V-defects showed no significant difference in their sheet resistance and specific contact resistance. J–V measurements of LEDs grown with varying unfilled V-defect densities showed no significant difference in the forward bias regime. However, in the reverse bias regime, catastrophic breakdown occurred at markedly lower voltages for samples with larger unfilled V-defect densities. This suggests that unfilled V-defects may act as hotspots for device failure, and planarizing LED surfaces may help prevent early degradation of LED devices.

Chemical vapor deposition↗
DOE OSTI2026

Instabilities and phase transitions in architected metamaterials: a gradient-enhanced continuum approach

Architected metamaterials such as foams and lattices exhibit a wide range of properties governed by microstructural instabilities and emerging phase transitions. Their macroscopic response–including energy dissipation during impact, large recoverable deformations, morphing between configurations, and auxetic behavior–remains difficult to capture with conventional continuum models, which often rely on discrete approaches that limit scalability. In this work, we propose a nonlocal continuum formulation that captures both stable and unstable responses of elastic architected metamaterials. The framework extends anisotropic hyperelasticity by introducing nonlocal variables and internal length scales reflective of microstructural features. Local polyconvex free-energy models are systematically augmented with two families of non-(poly)convex energies, enabling both metastable and bistable responses. Implementation in a finite element framework enables solution using a hybrid monolithic–staggered strategy. Simulations capture densification fronts, forward and reverse transitions, hysteresis loops, imperfection sensitivity, and globally coordinated auxetic modes. Overall, this framework provides a robust foundation for accelerated modeling of instability-driven phenomena in architected metamaterials, while enabling extensions to anisotropic, dissipative, and active systems as well as integration with data-driven and machine learning approaches.

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DOE OSTI2022

Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

Abstract To improve the manufacturing of vertical GaN devices for power electronics applications, the effects of defects in GaN substrates need to be better understood. Many non-destructive techniques including photoluminescence, Raman spectroscopy and optical profilometry, can be used to detect defects in the substrate and epitaxial layers. Raman spectroscopy was used to identify points of high crystal stress and non-uniform conductivity in a substrate, while optical profilometry was used to identify bumps and pits in a substrate which could cause catastrophic device failures. The effect of the defects was studied using vertical P-i-N diodes with a single zone junction termination extention (JTE) edge termination and isolation, which were formed via nitrogen implantation. Diodes were fabricated on and off of sample abnormalities to study their effects. From electrical measurements, it was discovered that the devices could consistently block voltages over 1000 V (near the theoretical value of the epitaxial layer design), and the forward bias behavior could consistently produce on-resistance below 2 mΩ cm 2 , which is an excellent value considering DC biasing was used and no substrate thinning was performed. It was found that high crystal stress increased the probability of device failure from 6 to 20%, while an inhomogeneous carrier concentration had little effect on reverse bias behavior, and slightly (~ 3%) increased the on-resistance (R on ). Optical profilometry was able to detect regions of high surface roughness, bumps, and pits; in which, the majority of the defects detected were benign. However a large bump in the termination region of the JTE or a deep pit can induce a low voltage catastrophic failure, and increased crystal stress detected by the Raman correlated to the optical profilometry with associated surface topography.

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DOE OSTI2022

Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

Vertical gallium nitride (GaN) p-n diodes have garnered significant interest for use in power electronics where high-voltage blocking and high-power efficiency are of concern. In this article, we detail the growth and fabrication methods used to develop a large area (1 mm 2 ) vertical GaN p-n diode capable of a 6.0-kV breakdown. We also demonstrate a large area diode with a forward pulsed current of 3.5 A, an 8.3-mΩ$\cdot$cm 2 differential specific ON-resistance, and a 5.3-kV reverse breakdown. In addition, we report on a smaller area diode (0.063 mm 2 ) that is capable of 6.4-kV breakdown with a differential specific ON-resistance of 10.2 mΩ$\cdot$cm 2 , when accounting for current spreading through the drift region at a 45° angle. Finally, the demonstration of avalanche breakdown is shown for a 0.063-mm 2 diode with a room temperature breakdown of 5.6 kV. In this work, these results were achieved via epitaxial growth of a 50-μm drift region with a very low carrier concentration of <1×10 15 cm –3 and a carefully designed four-zone junction termination extension.

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DOE OSTI2021

Direct aromatization of CO 2 via combined CO 2 hydrogenation and zeolite-based acid catalysis

Aromatics, including benzene, toluene, and xylenes (BTX), are essential chemical building blocks and are widely used as solvents, fuel additives, and polymers. With the recent development in CO 2 capture technologies and the progress made in producing H 2 using renewable energy, direct hydrogenation of CO 2 to aromatics via heterogeneous catalysis has emerged as a promising pathway to accomplish the production of aromatics with simultaneous utilization of waste CO 2 . In this review, we focus on recent advances in the nascent field of direct CO 2 aromatization, whereby tandem catalysts composed of CO 2 hydrogenation and aromatization functionalities are designed and deployed. We review two categories of tandem catalysts: catalysts integrating Fe-based/H-ZSM-5 components following RWGS (reverse water-gas shift of CO 2 to CO)-FT (Fischer-Tropsch synthesis of lower olefins)-aromatization pathways, and catalysts combining metal oxide/H-ZSM-5 domains following CO 2 to methanolaromatization pathways. The key parameters that determine the catalytic performance, such as the composition and structure of the Fe-based or metal oxide-based CO 2 conversion catalysts, the properties of H-ZSM-5, and the synergy between the two components, are analyzed to provide insights for the design of efficient tandem catalysts for CO 2 aromatization. In parallel, thermodynamic analyses, mechanistic studies, and density functional theory (DFT) computations for the relevant reaction routes and pathways are discussed to offer improved understanding of CO 2 activation, reaction intermediates, and product formation. In closing, the challenges and prospects for these tandem reactions are addressed to provide suggested paths forward for future research.

10 SYNTHETIC FUELS↗
DOE OSTI2023

Engineering a modular 44 Ti/ 44 Sc generator: eluate evaluation in preclinical models and estimation of human radiation dosimetry

Background: 44 Sc/ 47 Sc is an attractive theranostic pair for targeted in vivo positron emission tomographic (PET) imaging and beta-particle treatment of cancer. The 44 Ti/ 44 Sc generator allows daily onsite production of this diagnostic isotope, which may provide an attractive alternative for PET facilities that lack in-house irradiation capabilities. Early animal and patient studies have demonstrated the utility of 44 Sc. In our current study, we built and evaluated a novel clinical-scale 44 Ti/ 44 Sc generator, explored the pharmacokinetic profiles of 44 ScCl 3 , [ 44 Sc]-citrate and [ 44 Sc]-NODAGA (1,4,7-triazacyclononane,1-glutaric acid-4,7-acetic acid) in naïve mice, and estimated the radiation burden of 44 ScCl 3 in humans. Methods: 44 Ti/ 44 Sc (101.2 MBq) in 6 M HCl solution was utilized to assemble a modular ZR resin containing generator. After assembly, 44 Sc was eluted with 0.05 M HCl for further PET imaging and biodistribution studies in female Swiss Webster mice. Based on the biodistribution data, absorbed doses of 44 / 47 ScCl 3 in human adults were calculated for 18 organs and tissues using the IDAC-Dose software. Results: 44 Ti in 6 M HCl was loaded onto the organic resin generator with a yield of 99.97%. After loading and initial stabilization, 44 ScCl 3 was eluted with 0.05 M HCl in typical yields of 82.9 ± 5.3% (N = 16), which was normalized to the estimated generator capacity. Estimated generator capacity was computed based on elution time interval and the total amount of 44 Ti loaded on the generator. Run in forward and reverse directions, the 44 Sc/ 44 Ti ratio from a primary column was significantly improved from 1038 ± 440 to 3557 ± 680 (Bq/Bq) when a secondary, replaceable, ZR resin cartridge was employed at the flow outlet. In vivo imaging and ex vivo distribution studies of the reversible modular generator for 44 ScCl 3 , [ 44 Sc]-citrate and [ 44 Sc]-NODAGA show that free 44 Sc remained in the circulation significantly longer than the chelated 44 Sc. The dose estimation of 44 ScCl 3 reveals that the radiation burden is 0.146 mSv/MBq for a 70 kg adult male and 0.179 mSv/MBq for a 57 kg adult female. Liver, spleen and heart wall will receive the highest absorbed dose: 0.524, 0.502, and 0.303 mGy/MBq, respectively, for the adult male. Conclusions: A clinical-scale 44 Ti/ 44 Sc generator system with a modular design was developed to supply 44 ScCl 3 in 0.05 M HCl, which is suitable for further radiolabeling and in vivo use. Our data demonstrated that free 44 ScCl 3 remained in the circulation for extended periods, which resulted in approximately 10 times greater radiation burden than stably chelated 44 Sc. Stable 44 Sc/ 47 Sc-complexation will be more favorable for in vivo use and for clinical utility.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2024

Bicarbonate-Carbonate Selectivity through Nanofiltration for Direct Air Capture of Carbon Dioxide

Direct air capture (DAC) of carbon dioxide is one approach among many proposed that is capable of offsetting hard-to-avoid emissions. In previous work, we developed the alkalinity concentration swing (ACS) method, which is driven through concentrating an alkaline solution that has been loaded with atmospheric CO 2 by desalination technologies, such as reverse osmosis or capacitive deionization. Though the ACS is promising in terms of energy usage and implementation, its absorption rate and water requirements are infeasible for a large-scale DAC process. Here, we propose an improvement on the ACS, the bicarbonate-enriched alkalinity concentration swing (BE-ACS), which selects bicarbonate ions from a stream of aqueous alkaline solution that has absorbed atmospheric CO 2 . The bicarbonate-rich stream is then concentrated, which greatly increases its CO 2 partial pressure, and then CO 2 is extracted from solution. We experimentally investigate the use of pressure-driven nanofiltration (NF) membrane-based separation to select bicarbonate ions over carbonate ions. We screen commercial membranes and select one high-performance membrane for detailed studies, quantifying its bicarbonate-carbonate selectivity factor and bicarbonate-passage factor. Feed pH, the combined concentration of aqueous CO 2 , bicarbonate, and carbonate species (or dissolved inorganic carbon), alkalinity, and permeation flux are systematically varied to study NF separation properties. We find that the selectivity factor, which exceeds 30 times in certain regimes, increases with higher feed pH and higher alkalinity. Lastly, the performance metrics of the selected NF membrane are input into a theoretical BE-ACS cycle analysis, and the required energy input and cycle capacity output are evaluated. Ideal cycle energy is found to be as low as around 250 kJ/mol, with opportunities identified for further decreases through process engineering and forward osmosis energy recovery.

animal feed↗
NASA NTRS2009

Inherently Ducted Propfans and Bi-Props

The terms inherently ducted propfan (IDP) and inherently ducted biprop (IDBP) denote members of a proposed class of propfan engines that would be quieter and would weigh less than do other propfan engines that generate equal amounts of thrust. The designs of these engines would be based on novel combinations of previously established aerodynamic-design concepts, including those of counter-rotating propfans, swept-back and swept-forward fixed wings, and ducted propfans. Heretofore, noise-reducing propfan designs have provided for installation of shrouds around the blades. A single propeller surrounded by such a shroud is denoted an advanced ducted propeller (ADP); a pair of counter-rotating propellers surrounded by such a shroud is denoted a counter-rotating integrated shrouded propeller (CRISP). In addition to adding weight, the shrouds engender additional undesired rotor/stator interactions and cascade effects, and contribute to susceptibility to choking. An IDP or IDBP would offer some shielding against outward propagation of noise, similar to shielding by a shroud, but without the weight and other undesired effects associated with shrouds. An IDP would include a pair of counter-rotating propellers. The blades of the upstream propeller would be swept back, while those of the downstream propeller would be swept forward (see figure). The downstream blades would have a geometric twist such that their forward-swept tips could act as winglets extending over the tips of the upstream blades. In principle, the resulting periodic coverage of the upstream-blade tips by the downstreamblade tips would suppress outward propagation of noise, as though a short noise-shielding duct were present. Furthermore, it is anticipated that an IDP would be less susceptible to some of the operational limitations of a CRISP during asymmetric flow conditions or reverse thrust operation.

Takallu, M. A.↗
DOE OSTI2023

Advancements in conventional and 3D printed feed spacers in membrane modules

Plate & frame and spiral-wound modules are used for gas separation, pervaporation, reverse osmosis, nanofiltration, ultrafiltration, microfiltration, electro-dialysis, electro-deionization, membrane distillation and forward osmosis membrane processes. Feed channel spacers are an integral part of both module types – providing mechanical support for a cross-flow channel through the module and, in most cases, promoting mixing to enhance mass transfer to reduce concentration polarization and fouling. However, enhanced mass transfer comes at a cost of increased hydraulic pressure losses and stagnant zones wherever a spacer filament touches a membrane surface. Further, these stagnant zones exacerbate membrane fouling and make cleaning more difficult. Efforts to improve feed spacer performance largely focus on adjusting the chemistry or geometry of the spacer to mitigate these challenges. Additive manufacturing (i.e. 3D printing) offers new degrees of freedom in feed spacer design and production, which opens up a new area of research in membrane technology. This review critically assesses the peer-reviewed literature on conventional net- or mesh-style feed spacers in addition to various novel spacer geometries and chemistries produced via 3D printing. We further review and evaluate conventional spacer manufacturing methods and discuss advantages and disadvantages of 3D printed spacers.

3D printing↗
NASA NTRS1991

Velocity and pressure characteristics of a model SSME high pressure fuel turbopump

Under the present effort an experiment rig has been constructed, an instrumentation package developed and a series of mean and rms velocity and pressure measurements made in a turbopump which modelled the first stage of the Space Shuttle Main Engine (SSME) High Pressure Fuel Turbopump. The rig was designed so as to allow initial experiments with a single configuration consisting of a bell-mouth inlet, a flight impeller, a vaneless diffuser and a volute. Allowance was made for components such as inlet guide vanes, exit guide vanes, downstream pumps, etc. to be added in future experiments. This flexibility will provide a clear baseline set of experiments and allow evaluation in later experiments of the effect of adding specific components upon the pump performance properties. The rotational speed of the impeller was varied between 4260 and 7680 rpm which covered the range of scaled SSME rotation speeds when due allowance is made for the differing stagnation temperature, model to full scale. The results at the inlet obtained with rotational speeds of 4260, 6084 and 7680 rpm showed that the axial velocity at the bell-mouth inlet remained roughly constant at 2.2 of the bulk velocity at the exit of the turbopump near the center of the inlet, but it decreased rapidly with increasing radius at all three speeds. Reverse flow occurred at a radius greater than 0.9 R for all three speeds and the maximum negative velocity reduced from 1.3 of the bulk velocity at the exit of the turbopump at 4260 rpm to 0.35 at 7680 rpm, suggesting that operating at a speed closer to the design condition of 8700 rpm improved the inlet characteristics. The reverse flow caused positive prerotation at the impeller inlet which was negligibly small near the center but reached 0.7 of the impeller speed at the outer annulus. The results in the diffuser and the volute obtained at 7680 rpm show that the hub and shroud walls of the diffuser were characterized by regions of transient reverse flow with negative revolution-averaged velocity of 8 percent of the maximum forward revolution-averaged velocity at the center of the diffuser passage near the shroud wall.

Tse, D. G-N.↗
DOE OSTI2025

VAIM-CFF: a variational autoencoder inverse mapper solution to Compton form factor extraction from deeply virtual exclusive reactions

We develop a new methodology for extracting Compton form factors (CFFs) from deeply virtual exclusive reactions such as the unpolarized DVCS cross section using a specialized inverse problem solver, a variational autoencoder inverse mapper (VAIM). The VAIM-CFF framework not only allows us access to a fitted solution set possibly containing multiple solutions in the extraction of all 8 CFFs from a single cross section measurement, but also accesses the lost information contained in the forward mapping from CFFs to cross section. We investigate various assumptions and their effects on the predicted CFFs such as cross section organization, number of extracted CFFs, use of uncertainty quantification technique, and inclusion of prior physics information. We then use dimensionality reduction techniques such as principal component analysis to visualize the missing physics information tracked in the latent space of the VAIM framework. Through re-framing the extraction of CFFs as an inverse problem, we gain access to fundamental properties of the problem not comprehensible in standard fitting methodologies: exploring the limits of the information encoded in deeply virtual exclusive experiments.

Accelerator Physics↗
DOE OSTI2025

Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes

In this study, the electrical characteristics under forward- and reverse-bias conditions of III-nitride blue and green micro-light-emitting diodes (μLEDs) are analyzed. A fitting model is proposed to determine the contributions of reverse leakage current and the effectiveness of sidewall treatments. Moreover, the forward-bias currents of the μLEDs are examined using the extracted ideality factor to examine the impacts of sidewall defects. The results show that sidewall treatments are highly effective for suppression of leakage currents. From the efficiency perspective, higher wall-plug efficiency (WPE) than external quantum efficiency (EQE) is observed when the operating voltage is lower than the photon voltage in both blue and green 20 × 20 μm 2 devices. This enhancement of the WPE over the EQE is due to the suppression of Shockley–Read–Hall (SRH) nonradiative recombination. These observations indicate that μLEDs with sidewall treatments not only improve optical performance but also further enhance the electrical performance of devices by suppressing the leakage current paths due to SRH nonradiative recombination processes.

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