Search NASA⌕ Search

SEARCH · Search NASA

Results for “total dose effects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 91 records · Page 5

Radiation and Plasma Environments for Lunar Missions

Space system design for lunar orbit and extended operations on the lunar surface requires analysis of potential system vulnerabilities to plasma and radiation environments to minimize anomalies and assure that environmental failures do not occur during the mission. Individual environments include the trapped particles in Earth s radiation belts, solar energetic particles and galactic cosmic rays, plasma environments encountered in transit to the moon and on the lunar surface (solar wind, terrestrial magnetosheath and magnetotail, and lunar photoelectrons), and solar ultraviolet and extreme ultraviolet photons. These are the plasma and radiation environments which contribute to a variety of effects on space systems including total ionizing dose and dose rate effects in electronics, degradation of materials in the space environment, and charging of spacecraft and lunar dust. This paper provides a survey of the relevant charged particle and photon environments of importance to lunar mission design ranging from the lowest (approx.few 10 s eV) photoelectron energies to the highest (approx.GeV) cosmic ray energies.

Minow, Joseph I.↗

Compendium of Current Total Ionizing Dose and Displacement Damage Results from NASA Goddard Space Flight Center and NASA Electronic Parts and Packaging Program

Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices. Displacement Damage, Optoelectronics, Proton Damage, Single Event Effects, and Total Ionizing Dose.

Proton Damage↗

A TID and SEE Characterization of Multi-Terabit COTS 3D NAND Flash

Single-event effects and total ionizing dose testing are described for a 32-layer NAND flash memory, in both SLC and MLC configurations, with special considerations for unique three-dimensional test results. Extraction of three-dimensional heavy-ion test data presents a unique visualization of angular effects in NAND flash. Pattern dependence differences between SLC and MLC mode are noted, along with slightly non-uniform angular cross-section results due to the complex volume. Finally, TID data under different operating and bias conditions shows that the failure point remains the higher-voltage erasure circuitry.

Flash Memory↗

Resources for Radiation Test Data

The performance of electronic devices in a space radiation environment is often limited by susceptibility to single-event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Interpreting the results of SEE, TID, and DD testing of complex devices is quite difficult given the rapidly changing nature of both technology and the related radiation issues. Radiation testing is performed to establish the sensitivities of candidate spacecraft electronics to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transients (SETs), TID, and DD effects. Knowing where to search for these test results is a valuable resource for the aerospace engineer or spacecraft design engineer. This poster is intended to be a resource tool for finding radiation test data.

Single Event Effects (SEE)↗

Effect of Radiation and Endurance on Pulsed Programming of Commercial NAND Flash Memory

Independent and coupled effects of radiation and endurance on commercial NAND Flash memory is studied using pulsed programming enabled by interrupting the programming command at the chip-level. The effects of total ionization dose (TID) and endurance stress increase and decrease, respectively, the number of pulses needed to program an entire page. The coupled effect of endurance stress and TID appear to exhibit linear correlation. A neutral electron/ hole trap model is evaluated and correlates well with our results.

Narasimham, Avyaya Jayanthi↗

Characterization and recovery of Deep Sub Micron (DSM) technologies behavior under radiation

This paper serves a twofold purpose: characterize the behavior of a reconfigurable chip exposed to radiation; and demonstrate a method for functionality recovery due to Total Ionizing Dose (TID) effects. The experiments are performed using a PL developed reconfigurable device, a Field Programmable Transistor Array (FPTA). The paper initially describes experiments on the characterization of the NMOS transistor behavior for TID values up to 300krad. The behavior of analog and digital circuits downloaded onto the FPTA chip is also assessed for TID effects. This paper also presents a novel approach for circuit functionality recovery due to radiation effects based on Evolvable Hardware. The key idea is to reconfigure a programmable device, in-situ, to compensate, or bypass its degraded or damaged components. Experiments with total radiation dose up to 300kRad show that while the functionality of a variety of circuits, including digital gates, a rectifier and a Digital to Analog Converter implemented on a FPTA-2 chip is degraded/lost at levels before 200kRad, the correct functionality can be recovered through the proposed evolutionary approach and the chips are able to survive higher radiation, for several functions in excess of total radiation dose of 250kRad.

evolvable hardware↗

Standards for Radiation Effects Testing: Ensuring Scientific Rigor in the Face of Budget Realities and Modern Device Challenges

An overview is presented of the space radiation environment and its effects on electrical, electronic, and electromechanical parts. Relevant test standards and guidelines are listed. Test standards and guidelines are necessary to ensure best practices, minimize and bound systematic and random errors, and to ensure comparable results from different testers and vendors. Test standards are by their nature static but exist in a dynamic environment of advancing technology and radiation effects research. New technologies, failure mechanisms, and advancement in our understanding of known failure mechanisms drive the revision or development of test standards. Changes to standards must be weighed against their impact on cost and existing part qualifications. There must be consensus on new best practices. The complexity of some new technologies exceeds the scope of existing test standards and may require development of a guideline specific to the technology. Examples are given to illuminate the value and limitations of key radiation test standards as well as the challenges in keeping these standards up to date.

Test Standard↗

Progress in Spacecraft Environment Interactions: International Space Station (ISS) Development and Operations

The set of spacecraft interactions with the space flight environment that have produced the largest impacts on the design, verification, and operation of the International Space Station (ISS) Program during the May 2000 to May 2007 time frame are the focus of this paper. In-flight data, flight crew observations, and the results of ground-based test and analysis directly supporting programmatic and operational decision-making are reported as are the analysis and simulation efforts that have led to new knowledge and capabilities supporting current and future space explorations programs. The specific spacecraft-environment interactions that have had the greatest impact on ISS Program activities during the first several years of flight are: 1) spacecraft charging, 2) micrometeoroids and orbital debris effects, 3) ionizing radiation (both total dose to materials and single event effects [SEE] on avionics), 4) hypergolic rocket engine plume impingement effects, 5) venting/dumping of liquids, 6) spacecraft contamination effects, 7) neutral atmosphere and atomic oxygen effects, 8) satellite drag effects, and 9) solar ultraviolet effects. Orbital inclination (51.6deg) and altitude (nominally between 350 km and 460 km) determine the set of natural environment factors affecting the performance and reliability of materials and systems on ISS. ISS operates in the F2 region of Earth s ionosphere in well-defined fluxes of atomic oxygen, other ionospheric plasma species, solar UV, VUV, and x-ray radiation as well as galactic cosmic rays, trapped radiation, and solar cosmic rays. The micrometeoroid and orbital debris environment is an important determinant of spacecraft design and operations in any orbital inclination. The induced environment results from ISS interactions with the natural environment as well as environmental factors produced by ISS itself and visiting vehicles. Examples include ram-wake effects, hypergolic thruster plume impingement, materials out-gassing, venting and dumping of fluids, and specific photovoltaic (PV) power system interactions with the ionospheric plasma. Vehicle size (L) and velocity (v), combined with the magnitude and direction of the geomagnetic field (B) produce operationally significant magnetic induction voltages (VxB.L) in ISS conducting structure during high latitude flight (>+/- 45deg) during each orbit. In addition, ISS is a large vehicle and produces a deep wake structure from which both ionospheric plasma and neutrals species are largely excluded. ISS must fly in a very limited number of approved flight attitudes, so that exposure of a particular material or system to environmental factors depends upon: 1) location on ISS, 2) ISS flight configuration, 3) ISS flight attitude, and 4) variation of solar exposure (Beta angle), and hence thermal environment, with time. Finally, an induced ionizing radiation environment is produced by trapped radiation and solar/cosmic ray interactions with the relatively massive ISS structural shielding.

Koontz, Steve↗

Current Status and Future Challenges in Risk-Based Radiation Engineering

This presentation covers the basis and challenges for radiation effects in electronic systems. The three main types of radiation effects in electronics are: 1) total ionizing dose (TID), 2) total non-ionizing dose (TNID) / displacement damage dose (DDD), and 3) single-event effect (SEE). Some content on relevant examples of effects, current concerns, and possible environmental model-driven solutions are also included.

Total Ionizing Dose (TID)↗

Absorbed dose thresholds and absorbed dose rate limitations for studies of electron radiation effects on polyetherimides

The threshold values of total absorbed dose for causing changes in tensile properties of a polyetherimide film and the limitations of the absorbed dose rate for accelerated-exposure evaluation of the effects of electron radiation in geosynchronous orbit were studied. Total absorbed doses from 1 kGy to 100 MGy and absorbed dose rates from 0.01 MGy/hr to 100 MGy/hr were investigated, where 1 Gy equals 100 rads. Total doses less than 2.5 MGy did not significantly change the tensile properties of the film whereas doses higher than 2.5 MGy significantly reduced elongation-to-failure. There was no measurable effect of the dose rate on the tensile properties for accelerated electron exposures.

Long, Edward R., Jr.↗

Recovery of damage in rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays

This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.

Brucker, G. J.↗

Quantification of the memory imprint effect for a charged particle environment

The effects of total accumulated dose on the single-event vulnerability of NMOS resistive-load SRAMs are investigated. The bias-dependent shifts in device parameters can imprint the memory state present during exposure or erase the imprinted state. Analysis of these effects is presented along with an analytic model developed for the quantification of these effects. The results indicate that the imprint effect is dominated by the difference in the threshold voltage of the n-channel devices.

Bhuva, B. L.↗

Dose and dose rate effects of whole-body proton irradiation on leukocyte populations and lymphoid organs: part I

The goal of part I of this study was to evaluate the effects of whole-body proton irradiation on lymphoid organs and specific leukocyte populations. C57BL/6 mice were exposed to the entry region of the proton Bragg curve to total doses of 0.5 gray (Gy), 1.5 Gy, and 3.0 Gy, each delivered at a low dose rate (LDR) of 1 cGy/min and high dose rate (HDR) of 80 cGy/min. Non-irradiated and 3 Gy HDR gamma-irradiated groups were included as controls. At 4 days post-irradiation, highly significant radiation dose-dependent reductions were observed in the mass of both lymphoid organs and the numbers of leukocytes and T (CD3(+)), T helper (CD3(+)/CD4(+)), T cytotoxic (CD3(+)/CD8(+)), and B (CD19(+)) cells in both blood and spleen. A less pronounced dose effect was noted for natural killer (NK1.1(+) NK) cells in spleen. Monocyte, but not granulocyte, counts in blood were highly dose-dependent. The numbers for each population generally tended to be lower with HDR than with LDR radiation; a significant dose rate effect was found in the percentages of T and B cells, monocytes, and granulocytes and in CD4(+):CD8(+) ratios. These data indicate that mononuclear cell response to the entry region of the proton Bragg curve is highly dependent upon the total dose and that dose rate effects are evident with some cell types. Results from gamma- and proton-irradiated groups (both at 3 Gy HDR) were similar, although proton-irradiation gave consistently lower values in some measurements.

Non-NASA Center↗

Dose rate effects in MOS microcircuits

Three read/write random access memories, AM91L24, HM1-6514, and MWS 5114, were subjected to total dose irradiation at three dose rates, with electrical testing after each increment of dosage. Annealing measurements were performed after the radiation tests were completed. The AM91L24 showed a strong dose rate effect and substantial post-irradiation annealing of radiation-induced damage. The dose rate effect was that a lower dose rate produced less net damage than an eqivalent total dose applied at a higher rate. The HM1-6514 showed essentially no dose rate effect and no annealing damage, and the MWS 5114 exhibited a moderate effect with some annealing. It was concluded that dose rate is an important parameter in radiation test procedures for MOS microcircuits and that annealing measurements may be important evaluation aids for such tests.

Cleveland, D. G.↗

Guideline for ground radiation testing of microprocessors in the space radiation environment

The goal of this work is to develop a guideline that is applicable to processors that are potentially useful in space. Thus, the guideline does not consider very high performance processors that are intended for server or high-performance applications where very large amounts of power are tolerated to gain performance because it would be impractical to use such high-power devices in typical space applications. This guide is intended to support insertion of these microprocessors into spaceflight applications and to recommend ground test protocols. The first guideline principle that should be followed is a serious concurrent engineering approach for down selecting space-qualified microprocessors. This requires that the design engineer seek the support of a radiation effects expert who understands total ionizing dose (TID) and single-event effects (SEEs) issues for microprocessors as applied to the system in question.

Irom, Farokh↗

Design of CMOS logic gates for TID radiation

The rise time, fall time and propagation delay of the logic gates were derived. The effects of total ionizing dose (TID) radiation on the fall and rise times of CMOS logic gates were obtained using C program calculations and PSPICE simulations. The variations of mobility and threshold voltage on MOSFET transistors when subjected to TID radiation were used to determine the dependence of switching times on TID. The results of this work indicate that by increasing the size of P-channel transistor with respect to the N-channel transistors of the CMOS gates, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in TID radiation.

Attia, John Okyere↗