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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 91 records · Page 5
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

Lebron-Velilla, Ramon C.↗
NASA NTRS2019

Characterization and Failure Analysis of 650 V Enhancement-Mode GaN HEMT for Cryogenically-Cooled Power Electronics

In order to evaluate the feasibility of newly developed GaN devices in a cryogenically-cooled converter, this paper characterizes a 650 V enhancement-mode Gallium-Nitride high-electron-mobility transistor (GaN HEMT) at cryogenic temperatures. The characterization includes both static and dynamic behaviors. The results show that this GaN HEMT is an excellent device candidate to be applied in cryogenic-cooled applications. For example, transconductance at cryogenic temperature (93 K) is 2.5 times higher than one at room temperature (298 K), and accordingly, peak di/dt during turn-on transients at cryogenic temperature is around 2 times of that at room temperature. Moreover, the on-resistance of the channel at cryogenic temperature is only one-fifth of that at room temperature. The corresponding explanations of performance trends at cryogenic temperatures are also given from the view of semiconductor physics. In addition, several device failures were observed during the dynamic characterization of GaN HEMTs at cryogenic temperatures. The ultra-fast switching speed induced high di/dt and dv/dt at cryogenic temperatures amplifies the negative effects of parasitics inside the switching loop. Based on failure waveforms, two failure modes were classified, and detailed failure mechanisms caused by ultra-fast switching speed are given in this paper.

Static and dynamic characterization↗
DOE OSTI2022

Transient superconductivity at nano- and meso-scales

High-T c superconductivity is surpassed by few, if any, other unsolved problems in contemporary physics in terms of its richness, complexity, impact on other fields, and potential technological importance in energy applications. Recent discoveries reveal that the highest transition temperatures emerge under extraordinary experimental conditions such as the strong perturbation of a single atomic layer material by the underlying substrate, application of ~200 GPa pressure or ~MV/cm static electric fields, or irradiation by intense femtosecond optical fields. Research in superconductivity under extreme experimental conditions is challenging and requires the development of novel experimental methods and new theoretical tools suitable to tackle the problem. Our team has approached the challenges of transient superconductivity under intense optical fields by rethinking the types of experimental observables that are best suited to elucidate the physics of light-induced effects. This exercise has identified the need for: i) ultra-fast spatio-temporal probes enabling access to plasmonic properties and also nano-scale inhomogeneities that are ubiquitous in unconventional superconductors; ii) meso-scale structures and hybrid meta-surfaces imperative for strong enhancement of optical fields and iii) theoretical approaches suitable to explain and predict the response of superconductors under ultra-fast photo-excitation. Co-PIs have already made major advances with developing capabilities i)-iii). Therefore, our team is poised to make significant progress in transient superconductivity by exploring novel spatio-temporal effects that currently remain unattainable. Co-investigators will search for light-induced superconductivity in the high-T c cuprates to build upon spectacular recent results still lacking independent confirmations. Novel data acquisition methods combined with nano-plasmonic imaging will allow our team to test the hypothesis of photo-induced superconducting pairing. Spatio-temporal experiments will provide insights into the interplay between superconductivity and competing orders in the cuprates. Co-PIs will also investigate strong light-matter interaction and superconductivity in FeSe monolayers. Finally, we will study spatio-temporal electrodynamics of planar Josephson junctions. This latter direction will allow our team to thoroughly characterize one of the most fundamental examples of inhomogeneity in all of unconventional superconductivity. The proposed experiments in combination with theoretical analysis will provide information that is difficult to obtain using alternative methods. Basov and Averitt will carry out pump-probe spectroscopy and nano-imaging experiments. Averitt and Hone will design and fabricate state-of-the-art meta-surfaces. Theoretical and computational studies of ultrafast transient phenomena will be carried out by Millis and Fogler. Modeling of time-resolved nano-optical effects will be done by Fogler. The bulk of the requested budget will be used to support graduate students at Columbia & UCSD that will be co-supervised by co-PIs. The proposed program is transformative, since it will enable an entire suite of experiments previously either impossible or technically implausible. It will deliver critically important insights not only into mechanisms of unconventional superconductivity but also to many other correlated quantum materials.

36 MATERIALS SCIENCE↗
NASA NTRS2001

Novel High Efficient Organic Photovoltaic Materials

In man's mission to the outer space or a remote site, the most abundant, renewable, nonpolluting, and unlimited external energy source is light. Photovoltaic (PV) materials can convert light into electrical power. In order to generate appreciable electrical power in space or on the Earth, it is necessary to collect sunlight from large areas due to the low density of sunlight, and this would be very costly using current commercially available inorganic solar cells. Future organic or polymer based solar cells seemed very attractive due to several reasons. These include lightweight, flexible shape, ultra-fast optoelectronic response time (this also makes organic PV materials attractive for developing ultra-fast photo detectors), tunability of energy band-gaps via molecular design, versatile materials synthesis and device fabrication schemes, and much lower cost on large-scale industrial production. It has been predicted that nano-phase separated block copolymer systems containing electron rich donor blocks and electron deficient acceptor blocks will facilitate the charge separation and migration due to improved electronic ultrastructure and morphology in comparison to current polymer composite photovoltaic system. This presentation will describe our recent progress in the design, synthesis and characterization of a novel donor-bridge-acceptor block copolymer system for potential high-efficient organic optoelectronic applications. Specifically, the donor block contains an electron donating alkyloxy derivatized polyphenylenevinylene, the acceptor block contains an electron withdrawing alkyl-sulfone derivatized polyphenylenevinylene, and the bridge block contains an electronically neutral non-conjugated aliphatic hydrocarbon chain. The key synthetic strategy includes the synthesis of each individual block first, then couple the blocks together. While the donor block stabilizes the holes, the acceptor block stabilizes the electrons. The bridge block is designed to hinder the electron-hole recombination. Thus, improved charge separation is expected. In addition, charge migration will also be facilitated due to the expected nano-phase separated and highly ordered block copolymer ultrastructural. The combination of all these factors will result in significant overall enhancement of photovoltaic power conversion efficiency.

Sun, Sam↗
DOE OSTI2022

Random quasi-phase-matching for pulse characterization from the near to the long wavelength infrared

Experiments requiring ultrafast laser pulses require a full characterization of the electric field to glean meaning from the experimental data. Such characterization typically requires a separate parametric optical process. As the central wavelength range of new sources continues to increase so too does the need for nonlinear crystals suited for characterizing these wavelengths. Here we report on the use of poly-crystalline zinc selenide as a universal nonlinear crystal in the frequency resolved optical gating characterization technique from the near to long-wavelength infrared. Due to its property of random quasi-phase-matching it’s capable of phase matching second-harmonic and sum-frequency generation of ultra-broadband pulses in the near and long wavelength infrared, while being crystal orientation independent. With the majority of ultra-fast laser sources being in this span of wavelengths, this work demonstrates a greatly simplified approach towards ultra-fast pulse characterization spanning from the near to the long-wavelength infrared. To our knowledge there is no single optical technique capable of such flexible capabilities.

Davis, Brandin (ORCID:0000000166964548)↗
NASA NTRS1997

A Low-Power High-Speed Smart Sensor Design for Space Exploration Missions

A low-power high-speed smart sensor system based on a large format active pixel sensor (APS) integrated with a programmable neural processor for space exploration missions is presented. The concept of building an advanced smart sensing system is demonstrated by a system-level microchip design that is composed with an APS sensor, a programmable neural processor, and an embedded microprocessor in a SOI CMOS technology. This ultra-fast smart sensor system-on-a-chip design mimics what is inherent in biological vision systems. Moreover, it is programmable and capable of performing ultra-fast machine vision processing in all levels such as image acquisition, image fusion, image analysis, scene interpretation, and control functions. The system provides about one tera-operation-per-second computing power which is a two order-of-magnitude increase over that of state-of-the-art microcomputers. Its high performance is due to massively parallel computing structures, high data throughput rates, fast learning capabilities, and advanced VLSI system-on-a-chip implementation.

Fang, Wai-Chi↗
DOE OSTI2025

PSEC5 Physical Verification

Ultra-Fast timing detectors, having a time resolution of 10pSec or less, are becoming increasingly important for many scientific disciplines, including High Energy Physics, Nuclear Physics, Medical Imaging and more. When developing ultra-fast detectors such as MCPs, LAPPDs, LGADs, SNSPDs, it is necessary to have access to a readout system that is low power, can support many channels and is cost effective. The PSEC5 chip was an application specific integrated circuit (ASIC) developed by the pioneering group of Prof. Henry Frisch at University of Chicago and micro electronic engineers at Fermi National Accelerator Laboratory. Three boards were designed, two to implement the readout system for an LAPPD and one to only characterize the PSEC1 chip. The main goal of the project shifted to setting up a testing environment to focus on the characterization of the chip. My student and I tested and characterized this ASIC using the third chip-on-board printed circuit board. Results show the successful fabrication and operation of some of the key building blocks and lead to the suggestions on modification for the second iteration of the chip.

Rico Aniles, H. D. [Unlisted]↗
NASA NTRS2003

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Lebron-Velilla, Ramon C.↗
DOE OSTI2024

Visualizing plasmons and ultrafast kinetic instabilities in laser-driven solids using X-ray scattering

Ultra-intense lasers that ionize atoms and accelerate electrons in solids to near the speed of light can lead to kinetic instabilities that alter the laser absorption and subsequent electron transport, isochoric heating, and ion acceleration. These instabilities can be difficult to characterize, but X-ray scattering at keV photon energies allows for their visualization with femtosecond temporal resolution on the few nanometer mesoscale. Here, we perform such experiment on laser-driven flat silicon membranes that shows the development of structure with a dominant scale of 60 nm in the plane of the laser axis and laser polarization, and 95 nm in the vertical direction with a growth rate faster than 0.1 fs -1 . Combining the XFEL experiments with simulations provides a complete picture of the structural evolution of ultra-fast laser-induced plasma density development, indicating the excitation of plasmons and a filamentation instability. Particle-in-cell simulations confirm that these signals are due to an oblique two-stream filamentation instability. These findings provide new insight into ultra-fast instability and heating processes in solids under extreme conditions at the nanometer level with possible implications for laser particle acceleration, inertial confinement fusion, and laboratory astrophysics.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Detection of trace contaminants released from rapidly heated pulsed power electrodes by laser diagnostics

Development of a capability to measure trace gas contaminants released from pulsed power electrodes would immediately impact Sandia pulsed power research. These releases occur during ultra-fast heating of metal electrodes during pulsed power discharges and can lead to substantial power losses through plasma formation. Detection of contaminants is a formidable challenge due to the need for in-situ spatially and temporally resolved measurements of trace gases in the extreme environment of ultra-fast heated metal surfaces. We investigate the feasibility of laser diagnostics for detecting contaminants, including H-atom, OH, and H 2 O. Laser-induced fluorescence and photofragmentation fluorescence showed significant plasma emission interferences and did not yield any detectable H-atom, OH, or H 2 O. Our newly developed H-atom detection using femtosecond degenerate four-wave mixing suppressed interferences and enabled detection of H-atoms. A few shots showed large signals in the near-surface region of metal foils, suggesting the formation of a wave of H-atoms from the metal.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS2012

Achieving BLISS: Challenges for Building Fast, Ultra-Sensitive Transition-Edge Sensors

Topics: 1.Motivation and Intro to TESs. 2. BLISS Specifications-tolerance to dark power. 3.Measuring stray (dark) power-Tc (alpha) and G measurements. a) Overview two methods: JTD vs. TES. b) TES arrays: measurement and complications for Pd, Tc, and alpha. 4. Results: Pd compare, NEP, tau, 1/f issues. LIRGs and ULIRGs: Excellent example of distinct optical/UV and IR luminosity. Interaction long known, but huge luminosity is not predicted based on optical studies. (greater than 90% of the energy is emitted at in the far-IR). Large luminosity has both starburst and accretion components.

Transition-edge sensors (TESs)↗
NASA NTRS1993

New perspectives for high accuracy SLR with second generation geodesic satellites

This paper reports on the accuracy limitations imposed by geodesic satellite signatures, and on the potential for achieving millimetric performances by means of alternative satellite concepts and an optimized 2-color system tradeoff. Long distance laser ranging, when performed between a ground (emitter/receiver) station and a distant geodesic satellite, is now reputed to enable short arc trajectory determinations to be achieved with an accuracy of 1 to 2 centimeters. This state-of-the-art accuracy is limited principally by the uncertainties inherent to single-color atmospheric path length correction. Motivated by the study of phenomena such as postglacial rebound, and the detailed analysis of small-scale volcanic and strain deformations, the drive towards millimetric accuracies will inevitably be felt. With the advent of short pulse (less than 50 ps) dual wavelength ranging, combined with adequate detection equipment (such as a fast-scanning streak camera or ultra-fast solid-state detectors) the atmospheric uncertainty could potentially be reduced to the level of a few millimeters, thus, exposing other less significant error contributions, of which by far the most significant will then be the morphology of the retroreflector satellites themselves. Existing geodesic satellites are simply dense spheres, several 10's of cm in diameter, encrusted with a large number (426 in the case of LAGEOS) of small cube-corner reflectors. A single incident pulse, thus, results in a significant number of randomly phased, quasi-simultaneous return pulses. These combine coherently at the receiver to produce a convolved interference waveform which cannot, on a shot to shot basis, be accurately and unambiguously correlated to the satellite center of mass. This paper proposes alternative geodesic satellite concepts, based on the use of a very small number of cube-corner retroreflectors, in which the above difficulties are eliminated while ensuring, for a given emitted pulse, the return of a single clean pulse with an adequate cross-section.

Lund, Glenn↗
DOE OSTI2020

Experimental Study of Acceptor Removal in UFSD

The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. In this study, the effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2023

Roadmap on spatiotemporal light fields

Spatiotemporal sculpturing of light pulse with ultimately sophisticated structures represents a major goal of the everlasting pursue of ultra-fast information transmission and processing as well as ultra-intense energy concentration and extraction. It also holds the key to unlock new extraordinary fundamental physical effects. Traditionally, spatiotemporal light pulses are always treated as spatiotemporally separable wave packet as solution of the Maxwell’s equations. In the past decade, however, more generalized forms of spatiotemporally nonseparable solution started to emerge with growing importance for their striking physical effects. This roadmap intends to highlight the recent advances in the creation and control of increasingly complex spatiotemporally sculptured pulses, from spatiotemporally separable to complex nonseparable states, with diverse geometric and topological structures, presenting a bird’s eye viewpoint on the zoology of spatiotemporal light fields and the outlook of future trends and open challenges.

42 ENGINEERING↗
DOE OSTI2020

A Covalent Organic Framework for Fast-Charge and Durable Rechargeable Mg Storage

High safety, low cost and high volumetric capacity rechargeable magnesium batteries (RMBs) are promising alternatives to lithium ion batteries. However, lack of high power, high energy and stable cathodes for RMBs hinders their commercialization. Herein, an environmentally benign, low cost and sustainable covalent organic framework (COF) cathode for Mg storage is reported for the first time. It delivers a high power density of 2.8 kW kg -1 , a high specific energy density of 146 Wh kg -1 , and ultra-long cycle life of 3000 cycles with very slow capacity decay rate of 0.0196% per cycle, representing one of the best cathodes to date. The comprehensive electrochemical analysis proves that triazine ring sites in COF are redox centers for reversible reaction with magnesium ions, and the ultra-fast reaction kinetic is mainly attributed to pseudocapacitive behavior. The high-rate Mg storage of COF offers new opportunities for the development of ultra-stable and fast charge RMBs.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Visualization of shocked material instabilities using a fast-framing camera and XFEL four-pulse train

Many questions regarding dynamic materials could be answered by using time-resolved ultra-fast imaging techniques to characterize the physical and chemical behavior of materials in extreme conditions and their evolution on the nanosecond scale. In this work, we perform multi-frame phase-contrast imaging (PCI) of micro-voids in low density polymers under laser-driven shock compression. At the Matter in Extreme Conditions (MEC) Instrument at the Linac Coherent Light Source (LCLS), we used a train of four x-ray free electron laser (XFEL) pulses to probe the evolution of the samples. To visualize the void and shock wave interaction, here, we deployed the Icarus V2 detector to record up to four XFEL pulses, separated by 1-3 nanoseconds. In this work, we image elastic waves interacting with the micro-voids at a pressure of several GPa. Monitoring how the material’s heterogeneities, like micro-voids, dictate its response to a compressive wave is important for benchmarking the performances of inertial confinement fusion energy materials. For the first time in a single sample, we have combined an ultrafast x-ray framing camera and four XFEL pulse train to create an ultrafast movie of micro-void evolution under laser-driven shock compression. Eventually, we hope this technique will resolve the material density as it evolves dynamically under laser shock compression.

fusion↗
DOE OSTI2021

Optical response of a dual membrane active–passive optomechanical cavity

Highlights: • The optical response is determined by competition between photon-tunneling, two-phonon process, gain effect. • The photon-tunneling adjusts supermode frequency. • The absorption coefficient can exceed 1. • Not only realize fast/slow light but conversion between fast and slow light. We investigate a dual membrane active–passive cavity where each mechanical membrane individually quadratically coupled to passive and active cavities via two-phonon process. Due to the fact that in the quadratically coupled optomechanical system mean-field approximation fails, hence to analyze the system completely, we switch to a more generalized out of equilibrium approach, namely Keldysh Green’s functional approach. We calculate transmission rate using predetermined full retarded Green’s function, and then numerically examine the effect of the various parameters on the transmission coefficient and discuss the features and physical mechanism behind them in detail. On the basis of the optical responsivity we further extend our study to fast and slow light phenomenon. The results show that our proposed system can not only realize ultra-fast/ultra-slow light under proper choice of cavity parameters but also a realization of the conversion between fast and slow light and vice versa has also been pointed out.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Novel indium phosphide charged particle detector characterization with a 120 GeV proton beam

Thin film detectors which incorporate semiconductor materials other than silicon have the potential to build upon their unique material properties and offer advantages such as faster response times, operation at room temperature, and radiation hardness. To explore the possibility, promising candidate materials were selected, and particle tracking detectors were fabricated. An indium phosphide detector with a metal-intrinsic-metal structure has been fabricated for particle tracking. The detector was tested using radioactive sources and a high energy proton beam at Fermi National Accelerator Laboratory. In addition to its simplistic design and fabrication process, the indium phosphide particle detector showed a very fast response time of hundreds of picoseconds for the 120 GeV protons, which are comparable to the ultra-fast silicon detectors. This fast-timing response is attributed to the high electron mobility of indium phosphide. Such material properties can be leveraged to build novel detectors with superlative performance.

47 OTHER INSTRUMENTATION↗