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NASA NTRS2007

Fabrication of Buried Nanochannels From Nanowire Patterns

A method of fabricating channels having widths of tens of nanometers in silicon substrates and burying the channels under overlying layers of dielectric materials has been demonstrated. With further refinement, the method might be useful for fabricating nanochannels for manipulation and analysis of large biomolecules at single-molecule resolution. Unlike in prior methods, burying the channels does not involve bonding of flat wafers to the silicon substrates to cover exposed channels in the substrates. Instead, the formation and burying of the channels are accomplished in a more sophisticated process that is less vulnerable to defects in the substrates and less likely to result in clogging of, or leakage from, the channels. In this method, the first step is to establish the channel pattern by forming an array of sacrificial metal nanowires on an SiO2-on-Si substrate. In particular, the wire pattern is made by use of focused-ion-beam (FIB) lithography and a subsequent metallization/lift-off process. The pattern of metal nanowires is then transferred onto the SiO2 layer by reactive-ion etching, which yields sacrificial SiO2 nanowires covered by metal. After removal of the metal covering the SiO2 nanowires, what remains are SiO2 nanowires on an Si substrate. Plasma-enhanced chemical vapor deposition (PECVD) is used to form a layer of a dielectric material over the Si substrate and over the SiO2 wires on the surface of the substrate. FIB milling is then performed to form trenches at both ends of each SiO2 wire. The trenches serve as openings for the entry of chemicals that etch SiO2 much faster than they etch Si. Provided that the nanowires are not so long that the diffusion of the etching chemicals is blocked, the sacrificial SiO2 nanowires become etched out from between the dielectric material and the Si substrate, leaving buried channels. At the time of reporting the information for this article, channels 3 m long, 20 nm deep, and 80 nm wide (see figure) had been fabricated by this method.

Choi, Daniel↗

NASA NTRSDate not supplied

Hot Hydrogen Testing of Uranium Nitride Cermet for Nuclear Thermal Propulsion

This study investigated the thermochemical stability and performance characteristics of uranium mononitride tungsten molybdenum cermet (UN-Mo30W) as a potential fuel material for Nuclear Thermal Propulsion (NTP) engines. Twelve monolithic cylinders were subjected to conditions simulating an active NTP engine. The tests demonstrated thermal variability within the test article and highlighted the dissociation of UN into U and N2 at elevated temperatures, affecting the microstructure and causing bonding between cermet wafers and cooling tubes. Findings indicate that while UN-Mo30W cermet exhibits some desirable properties for NTP applications, its suitability is limited by high-temperature thermochemical instability.

nuclear fuels↗

DOE OSTI2020

Toward ultrafast, ultra-stable imaging arrays: Superlattice doping to enhance the performance of backside-illuminated 3D-hybridized silicon photodetectors

In this paper, the authors report the latest results on their development of superlattice-doped, thinned, backside-illuminated (BSI), 3D-integrated photodiode detectors—a step toward their ultimate goal of demonstrating ultrafast, ultrastable CMOS imaging arrays. As with most silicon-based photodetectors, backside-illumination and backside surface passivation are keys to achieve the highest performance capability. The two-dimensional (2D) doping technique developed at the Jet Propulsion Laboratory (JPL) has proved to result in a highly efficient, highly stable detector response when combined with a variety of detectors. Here, JPL's 2D-doping has been combined with Sandia's BSI photodetectors hybridized with custom fanout wafer via copper Direct Bond Interconnect (DBI®), a technology that is rapidly becoming industry standard for BSI CMOS imaging arrays. The prototype detectors were packaged and evaluated with respect to their response to low energy electrons. The authors find that the responsivity of 2D-doped BSI detectors is higher than devices prepared using other surface passivation techniques (i.e., ion implantation). The success of the work described herein verifies that the 2D-doping processes previously developed for Sandia's frontside-illuminated photodetectors are generally applicable to BSI detectors and demonstrates for the first time that JPL's 2D-doping process is compatible with the Cu-DBI® technology.

Jewell, April D.↗

NASA NTRS1979

Design, processing and testing of LSI arrays: Hybrid microelectronics task

Mathematical cost factors were generated for both hybrid microcircuit and printed wiring board packaging methods. A mathematical cost model was created for analysis of microcircuit fabrication costs. The costing factors were refined and reduced to formulae for computerization. Efficient methods were investigated for low cost packaging of LSI devices as a function of density and reliability. Technical problem areas such as wafer bumping, inner/outer leading bonding, testing on tape, and tape processing, were investigated.

Himmel, R. P.↗

NASA NTRS2010

A Two-Axis Direct Fluid Shear Stress Sensor

This innovation is a miniature or micro sized semiconductor sensor design that provides two axis direct non-intrusive measurement of skin friction or wall shear stress in fluid flow. The sensor is fabricated by micro-electro-mechanical system (MEMS) technology, enabling small size and low cost reproductions. The sensors have been fabricated by utilizing MEMS fabrication processes to bond a sensing element wafer to a fluid coupling wafer. This layering technique provides for an out of plane dimension that is on the same order of length as the inplane dimensions. The sensor design has the following characteristics: a shear force collecting plate with dimensions that can be tailored to various application specific requirements such as spatial resolution, temporal resolution and shear force range and resolution. This plate is located coplanar to both the sensor body and flow boundary, and is connected to a dual axis gimbal structure by a connecting column or lever arm. The dual axis gimbal structure has torsional hinges with embedded piezoresistive torsional strain gauges which provide a voltage output that is correlated to the applied shear stress (and excitation current) on force collection plate that is located on the flow boundary surface (hence the transduction method). This combination of design elements create a force concentration and resolution structure that enables the generation of a large stress on the strain gauge from the small shear stress on the flow boundary wall. This design as well as the use of back side electrical contacts establishes a non-intrusive method to quantitatively measure the shear force vector on aerodynamic bodies.

Adcock, Edward E.↗

NASA NTRS2011

Two-Axis Direct Fluid Shear Stress Sensor for Aerodynamic Applications

This miniature or micro-sized semiconductor sensor design provides direct, nonintrusive measurement of skin friction or wall shear stress in fluid flow situations in a two-axis configuration. The sensor is fabricated by microelectromechanical system (MEMS) technology, enabling small size and multiple, low-cost reproductions. The sensors may be fabricated by bonding a sensing element wafer to a fluid-coupling element wafer. Using this layered machine structure provides a truly three-dimensional device.

Bajikar, Sateesh S.↗

NASA NTRS2014

Microstructure and Oxidation of a MAX Phase/Superalloy Hybrid Interface

Corrosion resistant, strain tolerant MAX phase coatings are of interest for turbine applications. Thin Cr2AlC MAX phase wafers were vacuum diffusion bonded to an advanced turbine disk alloy, LSHR, at 1100 C. The interface, examined by optical and scanning electron microscopy, revealed a primary diffusion zone consisting of ~ 10 micrometers of beta-Ni(Co)Al, decorated with various NiCoCrAl, MC and M3B2 precipitates. On the Cr2AlC side, an additional ~40 micrometers Al-depletion zone of Cr7C3 formed in an interconnected network with the beta-Ni(Co)Al. Oxidation of an exposed edge at 800 C for 100 h produced a fine-grained lenticular alumina scale over Cr2AlC and beta-Ni(Co)Al, with coarser chromia granules over the Cr7C3 regions. Subsequent growth of the diffusion layers was only ~ 5 micrometers in total. A residual stress of ~ 500 MPa was estimated for the MAX phase layer, but no interfacial damage was observed. Subsequent tests for 1000 h reveal similar results.

heat resistant alloys↗

NASA NTRS2015

Fabrication of Feedhorn-Coupled Transition Edge Sensor Arrays for Measurement of the Cosmic Microwave Background Polarization

Characterization of the minute cosmic microwave background polarization signature requires multi-frequency high-throughput precision instrument systems. We have previously described the detector fabrication of a 40 GHz focal plane and now describe the fabrication of the detector modules for measurement of the CMB at 90GHz. The 74-TES based bolometers in each module are coupled to a niobium based planar orthomode transducer with integrated band defining filters implemented in microstrip transmission line. A single crystal silicon dielectric substrate serves as microstrip dielectric and as a thermal link between the membrane isolated MoAu TES operating at 150mK and the heat bath. A short silicon leg between the heat bath and the TES bolometer is designed for ballistic phonon transport and provides improved process control and uniformity of thermal conductance in the presence of phonon scattering on roughened surfaces. Micro-machined structures are used to realize the orthomode transducer backshort, provide out of band signal rejection, and a silicon photonic choke for feedhorn coupling are described. The backshort, choke wafer, and detector wafer are indium bump bonded to create a single 37-element dual-polarization detector module. Fourteen such hexagonally shaped modules each 90 mm in size comprise two focal planes. These, along with the recently delivered 40GHz focal plane, will survey a large fraction of the sky as part of the Johns Hopkins University led ground based CLASS (Cosmology Large Angular Scale Surveyor) telescope.

Characterization↗

NASA NTRS1987

Method of fabricating a PbS-PbSe IR detector array

A silicon wafer is provided which does not employ individually bonded leads between the IR sensitive elements and the input stages of multiplexers. The wafer is first coated with lead selenide in a first detector array area and is thereafter coated with lead sulfide within a second detector array area. The described steps result in the direct chemical deposition of lead selenide and lead sulfide upon the silicon wafer to eliminate individual wire bonding, bumping, flip chiping, planar interconnecting methods of connecting detector array elements to silicon chip circuitry, e.g., multiplexers, to enable easy fabrication of very long arrays. The electrode structure employed, produces an increase in the electrical field gradient between the electrodes for a given volume of detector material, relative to conventional electrode configurations.

Barrett, John R.↗

NASA NTRS1986

PbS-PbSe IR detector arrays

A silicon wafer is provided which does not employ individually bonded leads between the IR sensitive elements and the input stages of multiplexers. The wafer is first coated with lead selenide in a first detector array area and is thereafter coated with lead sulfide within a second detector array area. The described steps result in the direct chemical deposition of lead selenide and lead sulfide upon the silicon wafer to eliminate individual wire bonding, bumping, flip chipping, planar interconnecting methods of connecting detector array elements to silicon chip circuitry, e.g., multiplexers, to enable easy fabrication of very long arrays. The electrode structure employed, produces an increase in the electrical field gradient between the electrodes for a given volume of detector material, relative to conventional electrode configurations.

Barrett, John R.↗

NASA NTRS1997

Microfabricated Ice-Detection Sensor

Knowledge of ice conditions on important aircraft lift and control surfaces is critical for safe operation. These conditions can be determined with conventional ice-detection sensors, but these sensors are often expensive, require elaborate installation procedures, and interrupt the airflow. A micromachined, silicon-based, flush-mounted sensor which generates no internal heat has been designed, batch fabricated, packaged, and tested. The sensor is capable of distinguishing between an ice-covered and a clean surface. It employs a bulk micromachined wafer with a 7 micrometer-thick, boron-doped, silicon diaphragm which serves as one plate of a parallel-plate capacitor. This is bonded to a second silicon wafer which contains the fixed electrodes, one to drive the diaphragm by application of a voltage, the other to measure the deflection by a change in capacitance. The diaphragm sizes ranged from 1x1 mm to 3x3 mm, and the gap between parallel-plate capacitors is 2 micrometers. A 200 V d.c. was applied to the driving electrode which caused the capacitance to increase approximately 0.6pf, from a nominal capacitance of 0.6pf, when the surface was ice free. After the sensor was cooled below the freezing point of water, the same voltage range was applied to the drive electrode. The capacitance increased by the same amount. Then a drop of water was placed over the diaphragm and allowed to freeze. This created an approximately 2mm-thick ice layer. The applied 200V d.c. produced no change in capacitance, confirming that the diaphragm was locked to the ice layer. Since the sensor uses capacitive actuation, it uses very little power and is an ideal candidate for inclusion in a wireless sensing system.

DeAnna, Russell G.↗

DOE OSTI2023

Heterogeneous integration of an electro-optical platform

A hybrid photonic integrated circuit and a method of its manufacture are provided. A SiP functional layer is fabricated on an SOI wafer. A lithium niobate thin film is bonded to the SiP functional layer. The silicon handle layer is removed from the SOI wafer to expose buried oxide, and at least one III-V die is bonded to the exposed buried oxide. In embodiments, at least one waveguiding component is fabricated in the SiP functional layer. In embodiments, the SiP functional layer comprises a top waveguiding layer.

Kodigala, Ashok↗

NASA NTRS2004

Chemical Thinning Process for Fabricating UV-Imaging CCDs

The thinning stage of the postfabrication process reported in the immediately preceding article is notable in its own right. Although the thinning process was described in the preceding article as part of an overall process of fabrication of a supported charge-coupled device (CCD), it is more generally applicable to both free-standing and supported devices that have been fabricated in die and wafer formats. Like the thermocompression bonding process described in the preceding article, the thinning process is compatible with CCD-fabrication processes, as well as postfabrication processes that enhance the response of CCDs to ultraviolet (UV) light, including the delta-doping process. CCDs that are thinned by this process and then delta-doped exhibit high quantum efficiencies that are stable with time and with exposure to the environment.

Jones, TOdd↗

NASA NTRS2015

Fabrication of Feedhorn-Coupled Transition Edge Sensor Arrays for Measurement of the Cosmic Microwave Background Polarization

Characterization of the minute cosmic microwave background (CMB) polarization signature requires multi-frequency high-throughput precision instrument systems. We have previously described the detector fabrication of a 40 gigahertz focal plane and now describe the fabrication of a 37-element dual-polarization detector module for measurement of the CMB at 90 gigahertz. The 72-TES (Transition Edge Sensor)-based bolometers in each module are coupled to a niobium-based planar orthomode transducer with integrated band defining filters implemented in microstrip transmission line. A single crystal silicon dielectric substrate serves as microstrip dielectric and as a thermal link between the membrane isolated MoAu TES operating at 150 millikelvins and the heat bath. A short silicon leg between the heat bath and the TES bolometer is designed for ballistic phonon transport and provides improved process control and uniformity of thermal conductance in the presence of phonon scattering on roughened surfaces. Micro-machined structures are used to realize the orthomode transducer backshort, provide out of band signal rejection, and a silicon photonic choke for feedhorn coupling are described. The backshort, choke wafer, and detector wafer are indium bump-bonded to create a single 37-element dual-polarization detector module. Fourteen such hexagonally shaped modules each 80 millimeters in size comprise two focal planes. These, along with the recently delivered 40 gigahertz focal plane, will survey a large fraction of the sky as part of the Johns Hopkins University-led ground-based CLASS (Cosmology Large Angular Scale Surveyor) telescope.

Detectors↗

NASA NTRS2010

Disc resonator gyroscope fabrication process requiring no bonding alignment

A method of fabricating a resonant vibratory sensor, such as a disc resonator gyro. A silicon baseplate wafer for a disc resonator gyro is provided with one or more locating marks. The disc resonator gyro is fabricated by bonding a blank resonator wafer, such as an SOI wafer, to the fabricated baseplate, and fabricating the resonator structure according to a pattern based at least in part upon the location of the at least one locating mark of the fabricated baseplate. MEMS-based processing is used for the fabrication processing. In some embodiments, the locating mark is visualized using optical and/or infrared viewing methods. A disc resonator gyroscope manufactured according to these methods is described.

Shcheglov, Kirill V.↗

NASA NTRS2002

Microgyroscope with integrated vibratory element

A microgyroscope having a suspended vertical post uses the Coriolis force to detect the rotation rate. The microgyroscope consists of a single vertical post which is the rotation rate sensing element. The vertical post is formed from the same silicon wafers as the rest of the microgyroscope. A first portion of the vertical post and the clover-leaf structure are made from a first silicon wafer. A second portion of the vertical post and the baseplate are made from a second silicon wafer. The two portions are then bonded together to from the clover-leaf gyroscope with an integrated post structure.

Tang, Tony K.↗

NASA NTRS1997

A Model of the THUNDER Actuator

A THUNDER actuator is a composite of three thin layers, a metal base, a piezoelectric wafer and a metal top cover, bonded together under pressure and at high temperature with the LaRC SI polyimid adhesive. When a voltage is applied between the metal layers across the PZT the actuator will bend and can generate a force. This document develops and describes an analytical model the transduction properties of THUNDER actuators. The model development is divided into three sections. First, a static model is described that relates internal stresses and strains and external displacements to the thermal pre-stress and applied voltage. Second, a dynamic energy based model is described that allows calculation of the resonance frequencies, developed force and electrical input impedance. Finally, a fully coupled electro-mechanical transducer model is described. The model development proceeds by assuming that both the thermal pre-stress and the piezoelectric actuation cause the actuator to deform in a pure bend in a single plane. It is useful to think of this as a two step process, the actuator is held flat, differential stresses induce a bending moment, the actuator is released and it bends. The thermal pre-stress is caused by the different amounts that the constituent layers shrink due to their different coefficients of thermal expansion. The adhesive between layers sets at a high temperature and as the actuator cools, the metal layers shrink more than the PZT. The PZT layer is put into compression while the metal layers are in tension. The piezoelectric actuation has a similar effect. An applied voltage causes the PZT layer to strain, which in turn strains the two metal layers. If the PZT layer expands it will put the metal layers into tension and PZT layer into compression. In both cases, if shear force effects are neglected, the actuator assembly will experience a uniform in-plane strain. As the materials each have a different elastic modulus, different stresses will develop in each layer and these stresses will induce a bending moment. When the actuator is released from its flat configuration, the differential stresses are relieved as the actuator bends.

Curtis, Alan R. D.↗

NASA NTRSDate not supplied

Progress Towards Prolonged Deployment of SiC JFET-R ICs Into Previously Inaccessible Hostile Environments

This invited presentation describes demonstration of semiconductor integrated circuits (ICs) and ceramic packaging that are arguably the most environmentally durable transistor electronics ever demonstrated. SiC junction field effect transistor-resistor (JFET-R) ICs with two-level interconnect have successfully operated for over 1 year in 500 °C air-ambient [1], 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber [2], and radiation exposure through 7 Mrad(Si) total ionizing dose (TID) and 86 MeV-cm2/mg heavy ion strikes [3]. Furthermore, these ICs have also demonstrated operation from -190 °C to +812 °C (over 1000 °C T-span) without significant change in signal (input /output) or power supply voltages [4]. With modest adjustments, the SiC JFET-R fabrication process is compatible with semiconductor mass-production tools and materials. As an initial step towards this end, the processing that forms the SiC JFETs and resistors (without interconnect) for the NASA Glenn “Generation 12” design prototype JFET-R ICs was conducted at GE Research. Once the COVID-delayed IC interconnect and bond pad fabrication processing on these wafers is completed at NASA Glenn, the resulting chips will be packaged and oven-tested [5]. It is expected that further technology transfer to complete commercial production will lower investment and risk barriers to useful application deployment. For NASA, an initial high-value deployment is opening the Venus surface to extended missions for robotic scientific exploration.

Silicon Carbide↗