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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 937 records · Page 52
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

CVD-produced boron filaments

A technique for producing boron filaments with an average tensile strength of 6.89 GPa has been developed which involves longitudinal splitting of the filament and core (substrate) removal by etching. Splitting is accomplished by a pinch wheel device which continuously splits filaments in lengths of 3.0 m by applying a force to the side of the filament to create a crack which is then propagated along the axis by a gentle sliding action. To facilitate the splitting, a single 10 mil tungsten substrate is used instead of the usual 0.5 mil substrate. A solution of hot 30% hydrogen peroxide is used to remove the core without attacking the boron. An alternative technique is to alter the residual stress by heavily etching the filament. Average strengths in the 4.83-5.52 GPa range have been obtained by etching an 8 mil filament to 4 mil.

Wawner, F. E.↗
NASA NTRS1981

XPS study of interface formation of CVD SiO2 on InSb

The interfacial chemistry of CVD SiO2 films deposited on thin native oxides grown on InSb substrates is examined using X-ray photoemission spectroscopy (XPS) and a relatively benign chemical etching technique for depth profiling. An intensity analysis of XPS spectra is used to derive the compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system. Peak positions in these spectra are used to follow the change in substrate surface potential during the etch sequence, and to establish the chemical nature of the species formed during deposition and subsequent processing. Reaction of the substrate with oxygen resulted in an In-rich native oxide and 1-2 monolayers of excess elemental Sb at the native-oxide/substrate interface, incompletely oxidized silane reduced the native oxide, leaving less than 1 monolayer of elemental In at the SiO2/native oxide interface. Etch removal of this thin In-rich layer leads to a change in the substrate surface potential of 0.06 eV, corresponding to a net increase in positive charge. The results are consistent with simple thermodynamic considerations; they are also compared to previously reported studies of deposited dielectrics on III-V compound semiconductors.

Vasquez, R. P.↗
NASA NTRS1979

Industrial ion source technology

In reactive ion etching of Si, varying amounts of O2 were added to the CF4 background. The experimental results indicated an etch rate less than that for Ar up to an O2 partial pressure of about .00006 Torr. Above this O2 pressure, the etch rate with CF4 exceeded that with Ar alone. For comparison the random arrival rate of O2 was approximately equal to the ion arrival rate at a partial pressure of about .00002 Torr. There were also ion source and ion pressure gauge maintenance problems as a result of the use of CF4. Large scale (4 sq cm) texturing of Si was accomplished using both Cu and stainless steel seed. The most effective seeding method for this texturing was to surround the sample with large inclined planes. Designing, fabricating, and testing a 200 sq cm rectangular beam ion source was emphasized. The design current density was 6 mA/sq cm with 500 eV argon ions, although power supply limitations permitted operation to only 2 mA/sq cm. The use of multiple rectangular beam ion sources for continuous processing of wider areas than would be possible with a single source was also studied. In all cases investigated, the most uniform coverage was obtained with 0 to 2 cm beam overlay. The maximum departure from uniform processing at optimum beam overlap was found to be +15%.

Kaufman, H. R.↗
NASA NTRS1983

Spindt cold cathode electron gun development program

A thin film field emission cathode array and an electron gun based on this emitter array are summarized. Fabricating state of the art cathodes for testing at NASA and NRL, advancing the fabrication technology, developing wedge shaped emitters, and performing emission tests are covered. An anistropic dry etching process (reactive ion beam etching) developed that leads to increasing the packing density of the emitter tips to about 5 x 10 to the 6th power/square cm. Tests with small arrays of emitter tips having about 10 tips has demonstrated current densities of over 100 A/sq cm. Several times using cathodes having a packing density of 1.25 x 10 to the 6th power tips/sq cm. Indications are that the higher packing density achievable with the dry etch process may extend this capability to the 500 A/sq cm range and beyond. The wedge emitter geometry was developed and shown to produce emission. This geometry can (in principle) extend the current density capability of the cathodes beyond the 500 A/sq cm level. An emission microscope was built and tested for use with the cathodes.

Spindt, C. A.↗
NASA NTRS1986

Development of passive radiation detectors of improved sensitivity

The future development of a solid track high energy particle detector is discussed. The goal is to improve the sensitivity and lower the threshold of the detector. One most widely used material for such purpose is a plastic commercially known as CR-39. A scheme is presented which involves changing the formula of the monomer, diethylene glycol-bis-allyl carbonate. This is to be accomplished by substituting some heteroatoms for H and substituting sulfur atoms for oxygen in the ether linkages. Use of a new plasticizer to make the etched surface clearer than what has been accomplished as of today is suggested. Possible improvement in acquiring better tracks and increasing the ratio of V sub T/V sub B was planned. This is to be accomplished by changing the composition of the etchants, etching time, and etching temperature.

Chakrabarty, M. R.↗
NASA NTRS1986

Plastic deformation of a magnesium oxide 001-plane surface produced by cavitation

An investigation was conducted to examine plastic deformation of a cleaved single-crystal magnesium oxide 001-plane surface exposed to cavitation. Cavitation damage experiments were carried out in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (2 mm) to the surface of the cleaved specimen. The dislocation-etch-pit patterns induced by cavitation were examined and compared with that of microhardness indentations. The results revealed that dislocation-etch-pit patterns around hardness indentations contain both screw and edge dislocations, while the etch-pit patterns on the surface exposed to cavitation contain only screw dislocations. During cavitation, deformation occurred in a thin surface layer, accompanied by work-hardening of the ceramic. The row of screw dislocations underwent a stable growth, which was analyzed crystallographically.

Hattori, S.↗
NASA NTRS1986

Partial analysis of experiment LDEF A-0114

Due to delays in manifesting the return of the Long Duration Exposure Facility from space, attention was concentrated on extracting the maximum information from the EIOM-2 (oxygen interaction with materials experiment) flown on STS-8 in September 1983. An analysis was made of the optical surfaces exposed during that flight and an assessment made of the effect of the 5 eV atomic oxygen upon their physical and chemical properties. The surfaces studied were of two types: high-purity thin films sputtered or evaporated onto 2.54-cm diam lambda/20 fused silica optical flats, and highly polished bulk samples. Rapid etching of carbon and carbonaceous surfaces was observed with polycarbonate CR-39 showing the largest etch of any substrate flown and measured. Of the metals tested, only osmium and silver showed large effects, the former being heavily etched and the later forming a very thick layer of oxide. The first measurable effects on iridium, aluminum, nickel, tungsten and niobium thin films are reported.

Gregory, J. C.↗
NASA NTRS1989

Process For Patterning Dispenser-Cathode Surfaces

Several microfabrication techniques combined into process cutting slots 100 micrometer long and 1 to 5 micrometer wide into tungsten dispenser cathodes for traveling-wave tubes. Patterned photoresist serves as mask for etching underlying aluminum. Chemically-assisted ion-beam etching with chlorine removes exposed parts of aluminum layer. Etching with fluorine or chlorine trifluoride removes tungsten not masked by aluminum layer. Slots enable more-uniform low-work function coating dispensed to electron-emitting surface. Emission of electrons therefore becomes more uniform over cathode surface.

Garner, Charles E.↗
NASA NTRS1988

Material growth and characterization for solid state devices

During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used to grow ternary and quaternary alloy III-V semiconductor thin films. Selective area growth of InGaAs was performed on InP substrates using a patterned sputtered quartz or spin-on glass layer. The etch back and growth characteristics with respect to substrate orientation were investigated. The etch back behavior is somewhat different from wet chemical etching with respect to the sidewall profiles which are observed. LPEE was also employed to grow epitaxial layers of InGaAsP alloys on InP substrates. The behavior of Mn as an acceptor dopant was investigated with low temperature Hall coefficient and photoluminescence measurements. A metal-organic vapor phase epitaxy system was partially complete within the grant period. This atmospheric pressure system will be used to deposit III-V compound and alloy semiconductor layers in future research efforts.

Collis, Ward J.↗
NASA NTRS1988

Reactions of atomic oxygen (O/3P/) with various polymer films

An attempt is made to obtain the etch rates for various polymer films exposed to O(3P) downstream from, and out of the glow of, the O2 plasma. These rates are compared with published values from the following sources: etching in the glow of an O2 plasma, the Space Shuttle STS-8 flight experiment, and beam experiments. The etch rate data for Kapton fit a logarithmic plot (with a positive slope) of the reaction probability versus O(3P) impact energy.

Golub, Morton A.↗
NASA NTRS1989

Efficiency measurements of reflection gratings in the 100-300-A band

Zero-order and first-order efficiencies of plane diffraction grazings over the 100-300-A band have been measured using the NRL beamline facility at the National Synchrotron Light Source. Measurements were taken at grating angles of 5, 10, and 15 deg, and the incident radiation was polarized primarily in the transverse magnetic mode. Four (three laminar, one blazed) of the gratings were ion etched in high quality quartz blanks, overcoated with 200 A of gold. A fifth (blazed) grating was ruled in gold. The line densities are 1000, 2000, and 3600 grooves/mm for those with laminar profiles. Both blazed gratings have a blaze angle of 8 deg and line densities of 3600 grooves/mm. Measured first-order efficiencies up to 15 percent were obtained for the laminar gratings and up to 8 percent was obtained for the ion-etched blazed grating. Much lower efficiencies (not greater than 2 percent) were measured for the ruled grating. A computer program was written to calculate grating efficiencies using a full electromagnetic model. Measured efficiencies of the ion-etched gratings agree well with predicted values, but the measured first-order efficiency of the ruled grating is much lower than predicted.

Meekins, John F.↗
NASA NTRS1990

Electrical characterization of chemically modified YBa2Cu3O(7-x) surfaces

Results on electrical characterization of YBa2Cu3O(7-x) thin-film surfaces treated with a Br/ethanol chemical etch are presented. Electrical measurements of YBa2Cu3O(7-x)/Au/Nb device structures fabricated using polycrystalline, post-annelaed YBa2Cu3O(7-x) films with Br-etched surfaces, show improvements of approximately one or two orders of magnitude in current densities and resistivities (resistance-area products) relative to unetched devices. The existence of supercurrents in these structures has been confirmed by observation of the ac Josephson effect, and by magnetic field and temperature studies of the critical currents. The Br-etch process has produced 10 x 10 sq micron devices with critical current densities greater than 400 A/sq cm and resistivities as low as 4 x 10 to the -7th ohm/sq cm.

Hunt, B. D.↗
NASA NTRS1992

Microstructural investigations of light-emitting porous Si layers

The structural and morphological characteristics of visible-light-emitting porous Si layers produced by anodic and stain etching of single-crystal Si substrates are compared using transmission electron microscopy and atomic force microscopy (AFM). AFM of conventionally anodized, laterally anodized and stain-etched Si layers show that the layers have a fractal-type surface morphology. The anodized layers are rougher than the stain-etched films. At higher magnification 10 nm sized hillocks are visible on the surface. Transmission electron diffraction patterns indicate an amorphous structure with no evidence for the presence of crystalline Si in the near-surface regions of the porous Si layers.

George, T.↗
NASA NTRS1992

Texturing of InP surfaces for device applications

A unique process for texturing InP (100) wafers by anisotropic etching was developed. The process produces irregular V-grooves on the surface, which reduce the surface reflectivity. The process does not require photolithography or masking. The etching characteristics depend on doping, with etching tending to proceed more rapidly on the more heavily doped samples. Reduced reflectivity surfaces formed using this process can be applied to solar cells, photodetectors, and other optoelectronic devices.

Bailey, Sheila G.↗
NASA NTRS1993

Diffractive optics fabricated by direct write methods with an electron beam

State-of-the-art diffractive optics are fabricated using e-beam lithography and dry etching techniques to achieve multilevel phase elements with very high diffraction efficiencies. One of the major challenges encountered in fabricating diffractive optics is the small feature size (e.g. for diffractive lenses with small f-number). It is not only the e-beam system which dictates the feature size limitations, but also the alignment systems (mask aligner) and the materials (e-beam and photo resists). In order to allow diffractive optics to be used in new optoelectronic systems, it is necessary not only to fabricate elements with small feature sizes but also to do so in an economical fashion. Since price of a multilevel diffractive optical element is closely related to the e-beam writing time and the number of etching steps, we need to decrease the writing time and etching steps without affecting the quality of the element. To do this one has to utilize the full potentials of the e-beam writing system. In this paper, we will present three diffractive optics fabrication techniques which will reduce the number of process steps, the writing time, and the overall fabrication time for multilevel phase diffractive optics.

Kress, Bernard↗
NASA NTRS1993

Abundance and composition of solar KR in the H3-H6 chondrite ACFER111

He/Ne, Ne/Ar, and Ar/Kr abundance ratios of solar gases extracted by stepped heating, stepped oxidation, and stepped etching of lunar and meteoritic regoliths are significantly lower than ratios measured directly or predicted by model estimates. Of these, the differences in the He/Ne and Ne/Ar ratios are explained to be owing to diffusive fractionation losses from the host minerals. In contrast, it remains controversial if the Ar/Kr and Kr/Xe ratios were fractionated prior to or after the implantation of the gases into the minerals. In the H3-H6 chondritic regolith breccia ACFER 111, measured He/Ne and Ne/Ar ratios appear to be of nearly unfractionated solar composition. The Ar/Kr ratio of ACFER 111, might thus be also unfractionated. We examined by stepped etching a metal sample of ACFER 111 and obtained an average solar 36Ar/84Kr = 3150 plus or minus 300 which is in agreement with the model predictions. The isotopic composition of solar Kr was observed to change in the course of the etching in a way very similar to that report for lunar ilmenites by the Zurich group. This can be interpreted as a change of the mixing ratio of Solar Wind (SW) and Solar Energetic Particles (SEP). The isotopic composition of the SEP component obtained from our Kr data, however, is distinct from that reported by the Zurich group.

Pedroni, A.↗
NASA NTRS1993

A long-term change of the AR/KR/XE fractionation in the solar corpuscular radiation

Solar noble gases in an ilmenite separate from breccia 79035 (antiquity greater than 1 Ga) were analyzed by closed system stepped etching (CSSE). All five gases show the familiar two-component structure: first solar-wind (SW) gases are released, followed by gases from solar energetic particles (SEP). Element patterns in 79035 are similar to those of 71501 ilmenite. SW-He-Ne were partly lost, but SEP-He-Ne-Ar are retained (nearly) unfractionated. Constant Ar/Kr/Xe ratios indicate that ilmenites contain an unfractionated sample of the heavy SW-SEP noble gases. Ar/Kr/Xe ratios in the solar corpuscular radiation are, however, different from 'solar system' values, whereby the Kr/Xe difference in 79035 is about twice as large as in 71501. We propose that Xe is less fractionated than Kr and Ar, though its first ionization potential (FIP) is higher than the 'cutoff' at approximately 11.5 eV, above which all elements in SEP are usually assumed to be depleted by a roughly constant factor. SW-Ne may be isotopically slightly heavier in the ancient SW trapped by 79035, as proposed earlier. In this work we extend our previous CSSE studies of solar noble gases including Kr and Xe to a lunar sample irradiated at least 1 Ga ago (breccia 79035, ilmenite separate, 42-64 microns). This sample was particularly gently etched in the first steps. Surprisingly, the first three steps, each releasing less than or equal to 0.5% of the total 36-Ar, showed an SEP-like trapped component plus relatively large concentrations of cosmogenic gases. Steps 4ff contain much less cosmogenic and more solar gas with a SW-like isotope pattern. Thus, a very minor easily etchable phase that has completely lost its SW-gases must be responsible for steps 1-3. We will not discuss these steps here and refer to the actual step 4 as the 'initial' etching step.

Wieler, R.↗
NASA NTRS1994

A scanning defect mapping system for semiconductor characterization

We have developed an optical scanning system that generates maps of the spatial distributions of defects in single and polycrystalline silicon wafers. This instrument, called Scanning Defect Mapping System, utilizes differences in the scattering characteristics of dislocation etch pits and grain boundaries from a defect-etched sample to identify and count them. This system simultaneously operates in the dislocation mode and the grain boundary (GB) mode. In the 'dislocation mode,' the optical scattering from the etch pits is used to statistically count dislocations, while ignoring the GB's. Likewise, in the 'grain boundary mode' the system only recognizes the local scattering from the GB's to generate grain boundary distributions. The information generated by this instrument is valuable for material quality control, identifying mechanisms of defect generation and the nature of thermal stresses during the crystal growth, and the solar cell process design.

Sopori, Bushnan L.↗