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At least 937 records · Page 52

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NASA NTRS1981

Reduced annealing temperatures in silicon solar cells

Cells irradiated to a fluence of 5x10,000,000,000,000/square cm showed short circuit current on annealing at 200 C, with complete annealing occurring at 275 C. Cells irradiated to 100,000,000,000,000/square cm showed a reduction in annealing temperature from the usual 500 to 300 C. Annealing kinetic studies yield an activation energy of (1.5 + or - 2) eV for the low fluence, low temperature anneal. Comparison with activation energies previously obtained indicate that the presently obtained activation energy is consistent with the presence of either the divacancy or the carbon interstitial carbon substitutional pair, a result which agrees with the conclusion based on defect behavior in boron-doped silicon.

Weinberg, I.↗

NASA NTRS1980

A study of single event upsets in static RAM's

Several types of CMOS static random access memories (RAMs) have been tested in a cyclotron for susceptibility to single event upsets and latchup such as might occur in earth orbit or interplanetary space. No upsets have been observed for neutron fluences of 10 to the 11th n/sq cm and higher or proton fluences of 10 to the 9th protons/sq cm.

Price, W. E.↗

NASA NTRS1980

Deep-level defects and recombination parameters in proton irradiated AlGaAs-GaAs solar cells

The deep-level defects produced in high efficiency AlGaAs-GaAs solar cells by proton energies of 50, 100, 200, and 290 keV are investigated. Proton fluences were from 10 to the 10th to 10 to the 13th p/sq cm. The results show that the diode ideality factor varies between 1.9 and 2.1, indicating that the dominant current component is due to the recombination of electron-hole pairs via deep-level traps in the junction space charge region of these diodes. The recombination current increases with increasing proton fluence and proton energy. The reduction of open circuit voltage, short circuit current, and conversion efficiency in the irradiated cells relates directly to the density of the deep-level defects induced by proton irradiation.

Li, S. S.↗

NASA NTRS1981

The spectra and light curves of two gamma-ray bursts

Observations made by the Hard X-ray and Low Energy Gamma-Ray Experiment on board HEAO-1 of the spectra and light curves of two gamma-ray bursts for which localized arrival directions will become available are presented. The burst of October 20, 1977 is found to exhibit a fluence of 0.000031 + or - 0.000005 erg/sq cm over the energy range 0.135-2.05 MeV and a duration of 38.7 sec, while that of November 10, 1977 is found to have a fluence of 0.000021 + or - 0.000008 erg/sq cm between 0.125 and 3 MeV over 2.8 sec. The light curves of both bursts exhibit time fluctuations down to the limiting time resolution of the detectors. The spectrum of the October burst can be fit by a power law of index -1.93 + or -0.16, which is harder than any other gamma-burst spectrum yet reported. The spectrum of the second burst is softer (index -2.4 + or - 0.7), and is consistent with the upper index in the double power law fit to the burst of April 27, 1972.

Knight, F. K.↗

NASA NTRS1981

Processing of silicon solar cells by ion implantation and laser annealing

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Minnucci, J. A.↗

NASA NTRS1982

The galaxy as the origin of gamma-ray bursts. II - The effect of an intrinsic burst luminosity distribution on log N/greater than S/ versus log S

The effect of intrinsic burst luminosity distributions on log N-log S has been investigated for halo and disk galactic sources, using a power-law burst luminosity distribution characterized by a shape exponent and a luminosity range. Properly chosen burst luminosity distributions are shown to produce the log N-log S relations sufficiently different from those obtained with monoluminosity bursts to yield halo and thick disk geometries which are compatible with the observations. The soft shape of luminosity distributions capable of altering log N-log S has such observable consequences as (1) gamma-ray burst expected repetitions which first become apparent at lower fluences, and (2) the occurrence of most phenomena at luminosities on the order of about 10 to the 39th ergs, and correspondingly lower fluences.

Jennings, M. C.↗

NASA NTRS1982

Radiation damage and annealing in large area n+/p/p+ GaAs shallow homojunction solar cells

Annealing of radiation damage was observed for the first time in VPE-grown, 2- by 2-cm, n+/p/p+ GaAs shallow homojunction solar cells. Electrical performance of several cells was determined as a function of 1-MeV electron fluence in the range of 10 to the 13th power to 10 to the 15th power e-/sq cm and as a function of thermal annealing time at various temperatures. Degradation of normalized power output after a fluence of 10 to the 15th power 1-MeV electrons/sq cm ranged from a low of 24 to 31 percent of initial maximum power. Normalized short circuit current degradation was limited to the range from 10 to 19 percent of preirradiated values. Thermal annealing was carried out in a flowing nitrogen gas ambient, with annealing temperatures spanning the range from 125 to 200 C. Substantial recovery of short circuit current was observed at temperatures as low as 175 C. In one case improvement by as much as 10 percent of the postirradiated value was observed. The key features of these cells are their extremely thin emitter layers (approxmately 0.05 micrometers), the absence of any Al sub xGd sub 1-x As passivating window layer, and their fabrication by vapor phase epitaxy.

Flood, D. J.↗

NASA NTRS1982

Comments on the gamma-ray burst log N /greater than S/ log S point of Beurle et al

Statistical improbability is demonstrated for the Beurle et al (1981) determination of an isotropic cumulative burst rate of 7030 + 10,000 or - 6000/year, at a fluence of 8.47 x to the -9th/erg per sq cm, from their observation of two gamma-ray bursts. The difficulty identified is Beurle's assumption that the power law cumulative distribution function index equals one. Reconsideration of the Beurle observations is undertaken, and an alternative upper limit of the annual number of bursts at the fluence cited of less than 5400/year is proposed.

Jennings, M. C.↗

NASA NTRS1984

Defect studies in one MeV electron irradiated GaAs and in Al/sub x Ga/sub l-x As P-N junction solar cells

Deep level transient spectroscopy reveals that the main electron traps for one-MeV electron irradiated GaAs cells are E9c)-0.31, E(c)-0.90 eV, and the main hole trap is due to the level. Electron trap density was found to vary from 3/tens-trillion ccm for 2/one quadrillion cm 3/3.7 quadrillion cm for 21 sextillion cm electron fluence for electron fluence; a similar result was also obtained for the hole trap density. As for the grown-in defects in the Al(x)Ga(1-x)As p-n junciton cells, only two electron traps with energies of E(c)-0.20 and E(c)-0.34 eV were observed in samples with x = 0.17, and none was found for x 0.05. Auger analysis on the Al(x)Ga(1-x) As window layer of the GaAs solar cell showed a large amount of oxygen and carbon contaminants near the surface of the AlGaAs epilayer. Thermal annealing experiment performed at 250 C for up to 100 min. showed a reduction in the density of both electron traps.

Li, S. S.↗

NASA NTRS1985

Radiation effects induced in pin photodiodes by 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th power p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Becher, J.↗

NASA NTRS1985

Further observations of protons resulting from the decay of neutrons ejected by solar flares

The solar flare of 1984 April 24 produced a large gamma ray fluence with energy 2MeV. The time profile of the interplanetary flux from this flare indicates the presence of decaying solar neutrons. This makes a total of three neutron flares so far observed by this method. The three flares are used to place constraints on the fluence and spectra of neutrons emitted by the Sun.

Evenson, P. A.↗

NASA NTRS1985

A consideration of atomic oxygen interactions with space station

A computer model is developed in order to calculate fluence for a generalized spacecraft in orbital flight based on mass spectrometer and incoherent scatter (MSIS) measurements of ambient density. The calculations are used to identify criteria for the selection of materials for the construction of an LEO Space Station. The model is generalized such that the surfaces for study can be oriented in any direction with respect to: a body coordinate system fixed to the spacecraft (E surfaces); and a solar inertial coordinate system. A parametric study was performed in order to evaluate the effects of altitude, inclination, and solar activity on atomic oxygen fluence. Values are obtained for samples of Mylar, Kevlar, Kapton, Tedlar, Teflon and sulfone, as well as for some ethylene polymers. The range of values for material reactivities is from 360 microns for ram-facing surfaces to 200 microns for solar power surfaces during each cycle of solar activity. The possibility of improving reactivity by employing certain chemical coatings is also discussed.

Leger, L. J.↗

NASA NTRS1983

Secular variations in solar flare proton fluxes

Proton fluences in contemporary solar-flare events (1965-82) are analyzed to obtain values of average flux and characteristic rigidity R0 (MV). Both proton fluences F (E greater than 10MeV) and R0 (in the energy interval 10-30 MeV) values for individual events follow log-normal distribution. Comparison of contemporary average flux and R0 values with long-term averaged values, based on lunar sample data, indicate that the ancient solar-flare proton spectra were harder compared to that observed in contemporary flares. The contemporary and long-term (greater than 10,000 yr) averaged fluxes are similar, although such a comparison may not be meaningful because the contemporary averages suffer from uncertainty due to statistics of a single event. The long-term average data suggests a secular variation in solar-flare activity with enhanced proton fluxes during the last 100,000 years.

Goswami, J. N.↗

NASA NTRS1985

Unmelted meteoritic debris in the Late Pliocene iridium anomaly - Evidence for the ocean impact of a nonchondritic asteroid

Ir-bearing particles have been recovered from two piston cores in the Antarctic Basin in the southeastern Pacific. In core E13-3, the particles closely correspond to the Late Pliocene Ir anomaly and have a fluence of about 100 mg/cm sq. In core E13-4, 120 km to the southwest, the particle fluence is about 4 mg/cm sq. Particles with diameters from 0.5 to 4 mm contain at least 35 percent of the Ir in this horizon. Three types of particles have been identified: (1) vesicular, (2) basaltic, and (3) metal. The vesicular particles appear to be shock-melted debris derived from the oceanic impact of a howarditic asteroid containing a minor metal component. These particles have recrystallized from a melt and impact into the ocean has resulted in the incorporation of Na, K, Cl, and radiogenic Sr from the ocean water target. The basaltic clasts appear to be unmelted fragments of the original asteroid which may have separated from the main body prior to impact. Combined vesicular and basaltic particles are believed to have formed by collisions in the debris cloud. Estimates of the diameter of the projectile range from 100 to 500 m. By many orders of magnitude, this is the most massive achondrite sampled by a single meteorite fall.

Kyte, F. T.↗

NASA NTRS1985

Radiation damage in high-resistivity silicon solar cells

High-resistivity silicon solar cells exhibit reduced radiation damage when light is incident on the gridded back surface. Under back illumination, radiation damage decreases as cell resistivity increases; under front illumination, radiation damage increases as cell resistivity increases. Thin back-illuminated cells outperform conventional 10 omega cm 50 and 200 micron cells at low 1-MeV electron fluences. However, at higher fluences, the conventional cells exhibit superior radiation resistance. This is attributed to the low BOL diffusion lengths observed in the thin, sack-illuminated cell. These results are discussed in terms of injected charge distributions, electric fields in the cell base, and the effects of a dominant boron-oxygen defect.

Weinberg, I.↗

NASA NTRS1985

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Li, S. B.↗

NASA NTRS1985

Depletion layer recombination effects on the radiation damage hardness of gallium arsenide cells

The significant effect of junction depletion layer recombination on the efficiency of windowed GaAs cells was demonstrated. The effect becomes more pronounced as radiation damage occurs. The depletion is considered for 1 MeV electron fluences up to 10 to the 16th power e/sq m. The cell modeling separates damage in emitter and base or buffer layers using different damage coefficients is reported. The lower coefficient for the emitter predicts less loss of performance at fluences greater than 10 to the 15th power e/sq cm. A method for obtaining information on junction recombination effects as damage proceeds is described; this enables a more complete diagnosis of damage to be made.

Garlick, G. F. J.↗

NASA NTRS1985

Performance of Hughes GaAs concentrator cells under 1-MeV electron irradiation

Several Hughes gallium arsenide (GaAs) concentrator cells were exposed to 1-MeV electrons at fluences up to 1x10 to the 15th power electrons/sq cm. Performance data were taken after several fluences, at two temperatures, and at concentration levels from 1 to approx. 150x AMO. Data at 1 sun and 25 deg C were taken with an X-25 xenon-lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 by 5 mm with a 4-mm diameter illuminated area.

Curtis, H. B.↗