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Surface Transfer Doping in MoO 3– x /Hydrogenated Diamond Heterostructure

Surface transfer doping is proposed to be a potential solution for doping diamond, which is hard to dope for applications in high-power electronics. While MoO 3 is found to be an effective surface electron acceptor for hydrogen-terminated diamond with a negative electron affinity, the effects of commonly existing oxygen vacancies remain elusive. We have performed reactive molecular dynamics simulations to study the deposition of MoO 3–x on a hydrogenated diamond (111) surface and used first-principles calculations based on density functional theory to investigate the electronic structures and charge transfer mechanisms. We find that MoO 3–x is an effective surface electron acceptor and the spatial extent of doped holes in hydrogenated diamond is extended, promoting excellent transport properties. Charge transfer is found to monotonically decrease with the level of oxygen vacancy, providing guidance for engineering of the surface transfer doping process.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Optimized In Situ Doping Strategy Stabling Single-Crystal Ultrahigh-Nickel Layered Cathode Materials

Single-crystal Ni-rich cathodes offer promising prospects in mitigating intergranular microcracks and side reaction issues commonly encountered in conventional polycrystalline cathodes. However, the utilization of micrometer-sized single-crystal particles has raised concerns about sluggish Li + diffusion kinetics and unfavorable structural degradation, particularly in high Ni content cathodes. Herein, we present an innovative in situ doping strategy to regulate the dominant growth of characteristic planes in the singlecrystal precursor, leading to enhanced mechanical properties and effectively tackling the challenges posed by ultrahigh-nickel layered cathodes. Compared with the traditional dry-doping method, our in situ doping approach possesses a more homogeneous and consistent modifying effect from the inside out, ensuring the uniform distribution of doping ions with large radius (Nb, Zr, W, etc). Further, this mitigates the generally unsatisfactory substitution effect, thereby minimizing undesirable coating layers induced by different solubilities during the calcination process. Additionally, the uniformly dispersed ions from this in situ doping are beneficial for alleviating the two-phase coexistence of H2/H3 and optimizing the Li + concentration gradient during cycling, thus inhibiting the formation of intragranular cracks and interfacial deterioration. Consequently, the in situ doped cathodes demonstrate exceptional cycle retention and rate performance under various harsh testing conditions. Our optimized in situ doping strategy not only expands the application prospects of elemental doping but also offers a promising research direction for developing high-energy-density single-crystal cathodes with extended lifetime.

25 ENERGY STORAGE↗

Impact of dopant-induced band tails on optical spectra, charge carrier transport, and dynamics in single-crystal CdTe

Abstract Cadmium telluride (CdTe) semiconductors are used in thin-film photovoltaics, detectors, and other optoelectronic applications. For all technologies, higher efficiency and sensitivity are achieved with reduced charge carrier recombination. In this study, we use state-of-the-art CdTe single crystals and electro-optical measurements to develop a detailed understanding of recombination rate dependence on excitation and temperature in CdTe. We study recombination and carrier dynamics in high-resistivity (undoped) and arsenic (As)-doped CdTe by employing absorption, the Hall effect, time-resolved photoluminescence, and pump-probe in the 80–600 K temperature range. We report extraordinarily long lifetimes (30 µs) at low temperatures in bulk undoped CdTe. Temperature dependencies of carrier density and mobility reveal ionization of the main acceptors and donors as well as dominant scattering by ionized impurities. We also distinguish different recombination defects. In particular, shallow As Te and deep V Cd −As Cd acceptors were responsible for p-type conductivity. AX donors were responsible for electron capture, while nonradiative recombination centers (V Cd −As Te , As 2 precipitates), and native defects (V Cd −Te Cd ) were found to be dominant in p-type and n-type CdTe, respectively. Bimolecular and surface recombination rate temperature dependencies were also revealed, with bimolecular coefficient T −3/2 temperature dependence and 170 meV effective surface barrier, leading to an increase in surface recombination velocity at high temperatures and excitations. The results of this study allowed us to conclude that enhanced crucible rotation growth of As-doped CdTe is advantageous to As activation, leading to longer lifetimes and larger mobilities and open-circuit voltages due to lower absorption and trapping.

36 MATERIALS SCIENCE↗

Computational and Experimental Study of Li-doped Ionic Liquids at Electrified Interfaces

We evaluate the influence of Li-salt doping on the dynamics, capacitance, and structure of three ionic liquid electrolytes, [pyr14][TFSI], [pyr13][FSI], and [EMIM][BF4], using molecular dynamics and polarizable force fields. In this respect, our focus is on the properties of the electric double layer (EDL) formed by the electrolytes at the electrode surface as a function of surface potential (Psi). The rates of EDL formation are found to be on the order of hundreds of picoseconds and only slightly influenced by the addition of Li-salt. The EDLs of three electrolytes are shown to have different energy storage capacities, which we relate to the EDL formation free energy. The differential capacitance obtained from our computations exhibits asymmetry about the potential of zero charge and is consistent with the camel-like profiles noted from mean field theories and experiments on metallic electrodes. The introduction of Li-salt reduces the noted asymmetry in the differential capacitance profile. Complementary experimental capacitance measurements have been made on our three electrolytes in their neat forms and with Li-salt. The measurements, performed on glassy carbon electrodes, produce U-like profiles, and Li-salt doping is shown to strongly affect capacitance at high magnitudes of Psi. Differences in the theoretical and experimental shapes and magnitudes of capacitance are rationalized in terms of the electrode surface and pseudocapacitive effects. In both neat and Li-doped liquids, the details of the computational capacitance profile are well described by Psi-induced changes in the density and molecular orientation of ions in the molecular layer closest to the electrode. Our results suggest that the addition of Li+ induces disorder in the EDL, which originates from the strong binding of anions to Li+. An in-depth analysis of the distribution of Li+ in the EDL reveals that it does not readily enter the molecular layer at the electrode surface, preferring instead to be localized farther away from the surface in the second molecular layer. This behavior is validated through an analysis of the free energy of Li+ solvation as a function of distance from the electrode. Free energy wells are found to coincide with localized concentrations of Li+, the depths of which increase with Psi and suggest a source of impedance for Li+ to reach the electrode.

Haskins, Justin B.↗

Charge order and superconductivity in a two-band model for infinite-layer nickelates

The recent discovery of superconductivity in infinite-layer nickelates has drawn considerable attention; however, a consensus on the fundamental building blocks and common ingredients necessary to understand and describe their ground states and emergent properties is lacking. A series of experimental and theoretical studies have suggested that an effective two-band Hubbard model with Ni 3d x 2 -y 2 and rare-earth (R) 5d character may describe the low-energy physics. In this report we study the ground state properties of this two-band model on four-leg cylinders using the density-matrix renormalization group (DMRG) technique to better grasp whether such a simple model can embody the essential physics. A key difference compared to single-band Hubbard materials is that the system is self-doped: even at overall half-filling, the R-band acts as an electron reservoir, hole-doping the Ni-layer and fundamentally altering the physics expected from an undoped antiferromagnet. On the four-leg cylinder, the ground state is consistent with a Luttinger liquid, with anti-phase modulations of the charge density in the Ni- and R-layers having corresponding wavevectors that lock together. Light hole doping away from 1/2 filling releases the locking between the Ni and the R charge modulations, as the electron density in the R-band decreases and eventually becomes exhausted at a hole doping concentration that depends sensitively on the effective splitting between the Ni and the R orbitals. The ground state of the doped system is consistent with a Luther-Emery liquid, possessing quasi-long-range superconducting correlations in the Ni layer, similar to the single-band Hubbard model. Our results are consistent with experimental observations and may help to reveal the microscopic mechanism for pairing and other emergent properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Synthesis of nitrogen and sulfur co-doped yolk-shell porous carbon microspheres and their application for Pb(II) detection in fish serum

Highlights: • N, S-YSPCMS was obtained via simple silica templating and pyrolysis method. • N, S-YSPCMS shows spherical morphology, porous structure and high N, S contents. • N, S-YSPCMS based electrochemical sensor shows good performance in Pb(II) analysis. • N, S-YSPCMS based sensor is feasible in detection of Pb(II) in fish serum. - Abstract: Nitrogen (N) and sulfur (S) co-doped carbonaceous material has shown remarkably improved performance in electrocatalysis, supercapacitor, and so on. While, the application of N, S co-doped carbon in electrochemical sensor was less investigated. Herein, N, S co-doped yolk-shell porous carbon microspheres (N, S-YSPCMSs) were synthesized by silica templating strategy and high-temperature pyrolysis method. The as-prepared N, S-YSPCMSs exhibited spherical morphologies, porous structures and high N, S-doping contents. Owing to the synergetic effect of the well-dispersed N, S-dopants, good conductivity of carbon skeleton, high surface area and pore volume of the microspheres, the N, S-YSPCMSs prepared at 900 °C showed good electrochemical performance for Pb(II) and with a linear range of 4–160 μg L{sup −1}, the limit of detection is 0.49 μg L{sup −1} (S/N = 3). The electrochemical sensor was consequently applied in detecting Pb(II) in fish serum samples with satisfying recoveries, indicating the N, S-YSPCMSs-900 are promising electrode components for electroanalysis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Effect of Hydrostatic Pressure on Eu{sub 3−x}Sr{sub x}Bi{sub 2}S{sub 4−y}Se{sub y}F{sub 4} (x = 1 and 2 and y = 1.5 and 2) Superconductors

We have investigated the effect of pressure on Se-doped Eu{sub 2}SrBi{sub 2}S{sub 4}F{sub 4} and EuSr{sub 2}Bi{sub 2}S{sub 4}F{sub 4} at S sites. We report the electrical resistivity measurements under hydrostatic pressure (P) ~ 3 GPa and ~ 2.5 GPa on Eu{sub 2}SrBi{sub 2}S{sub 4−y}Se{sub y}F{sub 4} [dT{sub c}/dP ~ 1.68 K/GPa (x = 2)] and EuSr{sub 2}Bi{sub 2}S{sub 4−x}Se{sub x}F{sub 4} [dT{sub c}/dP ~ 1.57 K/GPa (x = 1.5) and 1.74 K/GPa (x = 2)] respectively. Pressure-induced superconductivity has been observed in EuSr{sub 2}Bi{sub 2}S{sub 2.5}Se{sub 1.5}F{sub 4} with T{sub c} of 2.42 K at 0.12 GPa and the T{sub c} increases with further application of P up to 3 GPa (dT{sub c}/dP ~ 1.12 K/GPa) and maximum T{sub c} of ~ 8 K is observed for EuSr{sub 2}Bi{sub 2}S{sub 2}Se{sub 2}F{sub 4.} These results corroborate the behavior of this material under high pressure magnetization studies. Further, the metallic nature is observed for EuSr{sub 2}Bi{sub 2}S{sub 2.5}Se{sub 1.5}F{sub 4}, EuSr{sub 2}Bi{sub 2}S{sub 2}Se{sub 2}F{sub 4}, and Eu{sub 2}SrBi{sub 2}S{sub 2}Se{sub 2}F{sub 4} compositions and it is slightly suppressed with the application of pressure. Pressure effect on upper critical field H{sub c2}(0) is estimated from magnetic field–dependent ρ(T) measurements and it is found to be higher for all compositions than parent compound. The field-dependent thermal activation energy (μ{sub 0}/k{sub B}) is calculated from Arrhenius plot using ρ(T) and designates a robust flux pinning potential which might be co-existing with applied magnetic field and pressure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Impact of cobalt doping on structural and magnetic properties of zinc oxide nanocomposites synthesized by mechanical ball-milling method

A series of zinc oxide (ZnO) semiconductor nanocomposite samples doped with different concentrations of cobalt (Co) were successfully synthesized via simple and highly effective mechanical ball-milling method using suitable precursors. All doped nanocomposites crystallized in hexagonal wurtzite formation of ZnO. No alteration in the wurtzite structure, with no evidence of any segregated secondary phase(s) was detected with increasing doping concentrations. This result unambiguously verified the substitution of Zn 2+ sites by Co 2+ ions in the ZnO host lattice for different doping concentrations. Moreover, room temperature ferromagnetic behavior was observed in all doped nanocomposite samples in the reported work. Present study clearly shows that mechanical ball-milling is a facile, inexpensive, eco-friendly method to synthesize crystalline and magnetic Co doped ZnO nanocomposites for next generation spin-based devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Sulfur and Moisture Effects on Alumina Scale and TBC Spallation

It has been well established that a few ppmw sulfur impurity may segregate to the interface of thermally grown alumina scales and the underlying substrate, resulting in bond degradation and premature spallation. This has been shown for NiAl and NiCrAl-based alloys, bare single crystal superalloys, or coated superalloys. The role of reactive elements (especially Y) has been to getter the sulfur in the bulk and preclude interfacial segregation. Pt additions are also very beneficial, however a similar thermodynamic explanation does not apply. The purpose of the present discussion is to highlight some observations of these effects on Rene'142, Rene'N5, PWA1480, and PWA1484. For PWA1480, we have mapped cyclic oxidation and spallation in terms of potential sulfur interfacial layers and found that a cumulative amount of about one monolayer is sufficient to degrade long term adhesion. Depending on substrate thickness, optimum performance occurs if sulfur is reduced below about 0.2-0.5 ppmw. This is accomplished in the laboratory by hydrogen annealing or commercially by melt-fluxing. Excellent 1150 C cyclic oxidation is thus demonstrated for desulfurized Rene'142, Rene'N5, and PWA1484. Alternatively, a series of N5 alloys provided by GE-AE have shown that as little as 15 ppmw of Y dopant was effective in providing remarkable scale adhesion. In support of a Y-S gettering mechanism, hydrogen annealing was unable to desulfurize these alloys from their initial level of 5 ppmw S. This impurity and critical doping level corresponds closely to YS or Y2S3 stoichiometry. In many cases, Y-doped alloys or alloys with marginal sulfur levels exhibit an oxidative sensitivity to the ambient humidity called Moisture-Induced Delayed Spallation (MIDS). After substantial scale growth, coupled with damage from repeated cycling, cold samples may spall after a period of time, breathing on them, or immersing them in water. While stress corrosion arguments may apply, we propose that the underlying cause is related to a hydrogen embrittlement reaction: Al alloy + 3 H2O = Al(OH)3 + 3H(+) + 3e(-). This mechanism is derived from an analogous moisture-induced hydrogen embrittlement mechanism originally shown for Ni3Al and FeAl intermetallics. Consequently, a cathodic hydrogen charging technique was used to demonstrate that electrolytic de-scaling occurs for these otherwise adherent alumina scales formed on Y-doped Rene'N5, in support of hydrogen effects. Finally, some TBC observations are discussed in light of all of the above. Plasma sprayed 8YSZ coatings, produced on PWA1484 without a bond coat, were found to survive more than 1000 1-hr cycles at 1100 C when desulfurized to below 0.1 ppmw. At higher sulfur (1.2 ppmw) levels, moisture sensitivity and delayed TBC failure, referred to as Desk Top Spallation, occurred at just 200 hr. Despite a large degree of scatter, a factor of 5 in life improvement is indicated for desulfurized samples in cyclic furnace tests, confirming the beneficial effect of low sulfur alloys on model TBC systems. (DTS and moisture effects are also observed on commercially applied PVD 7YSZ coatings on Rene'N5+Y with Pt-aluminide bond coats). These types of catastrophic failure were subverted on the model system by segmenting the substrate into a network of 0.010 high ribs, spaced in. apart, prior to plasma spraying. No failures occurred after 1000 cycles at 1150 C or after 2000 cycles at 1100 C, even after water immersion. The benefit is described in terms of elasticity models and a critical buckling stress.

Smialek, James L.↗

Amorphous TiCu-Based Additives for Improving Hydrogen Storage Properties of Magnesium Hydride

Magnesium hydride has long been regarded as a promising candidate material for hydrogen and heat storage due to its high hydrogen capacity, reversibility, and low cost. Catalytic doping has been demonstrated as one of the most effective methods to improve hydrogen storage properties of MgH 2 . In this study, amorphous Ti 45 Cu 41 Ni 9 Zr 5 and Ti 40 Cu 47 Zr 10 Sn 3 alloys are used as additives for MgH 2 . Nanostructured MgH 2 doped with amorphous or crystalline TiCu-based alloys are prepared by using a high-energy mechanochemical synthesis method. Results show that the amorphous TiCu additives provide enhanced catalytic effects compared to crystalline alloys of the same composition. Doping MgH 2 using an amorphous Ti 45 Cu 41 Ni 9 Zr 5 alloy yielded improved dehydrogenation kinetics compared to using crystalline Ti 40 Cu 47 Zr 10 Sn 3 alloy. The analysis using transmission electron microscopy reveals that there are nanostructured catalytic particles uniformly distributed in the amorphous TiCu-catalyzed MgH 2 . The MgH 2 system catalyzed by amorphous TiCu-based alloy shows little degradation during hydrogenation and dehydrogenation cycling at 300 °C. The amorphous TiCu-based catalysts are thermally stable at temperatures up to 360 °C. Heating the amorphous Ti 45 Cu 41 Ni 9 Zr 5 -catalyzed MgH 2 to temperatures above 360 °C led to disproportionation of the catalyst alloy and the formation of MgCu 2 and Ti 2 Cu. In addition, PCI analysis of the amorphous Ti 45 Cu 41 Ni 9 Zr 5 -catalyzed MgH 2 shows a slight increase in hydrogen equilibrium pressure, resulting in a reaction enthalpy of -78.7 kJ/mol • H 2 and an entropy of 145.0 J/K•mol•H 2 . As a result, the entropy calculated from this study is approximately 10 J/K•mol•H 2 higher than values previously reported for undoped and catalyzed Mg-H systems.

08 HYDROGEN↗

Defect levels and self-compensation in iodine-doped CdTe single crystals

This study systematically documents defect levels in n-type iodine-doped cadmium telluride (CdTe:I) crystals as measured by thermoelectric effect spectroscopy, Hall-effect measurements, and photoluminescence and calculated by density functional theory. The primary donor, I Te , was identified with an activation energy of ∼0.05 eV (measured)/∼0.13 eV (calculated). Deep acceptor states, V Cd and I Te –V Cd complex, exhibited activation energies of ∼0.1 eV (measured)/∼0.19 eV (calculated) and ∼0.12 eV (measured)/∼0.24 eV (calculated), respectively. Self-compensation and Fermi level pinning were observed at ∼0.7 eV (measured)/∼1.08 eV (calculated), contributing to high resistivity in as-grown samples. Post-growth Cd annealing effectively removes compensation centers, releases iodine donors, and significantly reduces resistivity, resulting in an ideal n-type solar cell material.

Cd annealing↗

Impacts of point defects on shallow doping in cubic boron arsenide: A first principles study

Cubic boron arsenide (BAs) stands out as a promising material for advanced electronics, thanks to its exceptional thermal conductivity and ambipolar mobility. However, effective control of p- and n-type doping in BAs poses a significant challenge, mostly as a result of the influence of defects. In the present study, we employed density functional theory (DFT) to explore the impacts of the common point defects and impurities on p-type doping of Be B and Si As , and on n-type doping of Si B and Se As . We found that the most favorable point defects formed by C, O, and Si are C As , O B O As , Si As , C As Si B , and O B Si As , which have formation energies of less than 1.5 eV. While the O impurity detrimentally affects both p- and n-type dopings, C and Si impurities are harmful for n-type dopings, making n-type doping a potential challenge. Interestingly, the antisite defect pair A s B B As benefits both p- and n-type doping. Finally, the doping limitation analysis presented in this study can potentially pave the way for strategic development in the area of BAs-based electronics.

36 MATERIALS SCIENCE↗

Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators

The extreme versatility of van der Waals materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. 1 For example, although graphene is inherently non-magnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway towards achieving a high-temperature quantum anomalous Hall effect. Here, we investigate heterostructures of graphene and chromium trihalide magnetic insulators (CrI 3 , CrBr 3 , and CrCl 3 ). Surprisingly, we are unable to detect a magnetic exchange field in the graphene, but instead discover proximity effects featuring unprecedented gate-tunability. The graphene becomes highly hole-doped due to charge transfer from the neighboring magnetic insulator, and further exhibits a variety of atypical gate-dependent transport features. The charge transfer can additionally be altered upon switching the magnetic states of the nearest CrI 3 layers. In conclusion, our results provide a roadmap for exploiting proximity effects arising in graphene coupled to magnetic insulators.

2D magnet↗

Computationally guided experimental validation of divacancy defect formation in 4H-SiC

Recent research into solid-state qubits for quantum information science has focused on optically addressable spin defects such as the negatively charged nitrogen-vacancy center in diamond and the neutrally charged divacancy (VV) in 4H-SiC as scalable quantum sensors and networking qubits. Within this context, direct investigations of the structural origin and defect formation dynamics of a sub-set of the VV center in 4H-SiC remain lacking. Here, we take a systematic experimental approach guided by predictions from first-principles simulations to gain a thorough mechanistic understanding of the VV defect formation and control in 4H-SiC. We study the effect of annealing time and temperature on VV formation in high-purity semi-insulating 4H-SiC samples following electron irradiation. Three different temperatures (1123, 1273, and 1473 K) and annealing duration (from 0.5 to 72 h) are chosen to explore VV formation in different regions. We find that samples annealed at 1273 K give the highest VV-related photoluminescence (PL) intensities, in agreement with the prediction from first-principles calculations. Furthermore, the logarithmic dependence of VV-related PL intensities on the annealing duration at 1273 K indicates that 1273 K provides sufficient thermal energy for silicon vacancy migration but not for VV migration. Together, these results suggest that efficient VV formation occurs above the V Si migration temperature and below the VV migration threshold.

74 ATOMIC AND MOLECULAR PHYSICS↗

CaSn(OH){sub 6} hydroxides, CaSnO{sub 3} oxides and CaSnF{sub 6} fluorides: Synthesis and structural filiation. Cationic environment impact on Pr{sup 3+} doped compounds luminescence

Highlights: • Structural filiation of stannates compounds. • {sup 119}Sn Mossbauer analysis of Sn-X chemical bonding (X = OH, O, F). • Nephelauxetic effect observed in the luminescence of Pr{sup 3+} doped stannate compounds. - Abstract: CaSn(OH){sub 6}, CaSnO{sub 3} and CaSnF{sub 6} compounds were elaborated from a “one-batch” synthesis route: the coprecipitation of the pure double hydroxide leads to pure double oxide or fluoride after annealing treatments under air or HF as anhydrous gas, respectively. Structural and morphological features of the three matrices were carefully investigated by X Ray Diffraction analysis and Scanning Electron Microscopy, respectively. In addition, the luminescent properties of the Pr-doped compounds were performed and compared. The nanometric size of the double hydroxide inhibits the luminescence. The interpretation of the emission spectra obtained for Pr-doped CaSnO{sub 3} and CaSnF{sub 6} compounds is based on the covalence/ionic balance of the M–O or M–F bonds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Temperature and intensity dependence of photorefractive effect in GaAs

The photorefractive effect in semi-insulating Cr-doped GaAs as measured by the beam coupling technique was investigated as functions of temperature (295-386 K) and intensity (0.15-98 mW/sq cm of 1.15-micron light beams from a He-Ne laser). Results show that the photorefractive effect deteriorates rapidly over a narrow range of temperature as temperature rises, and that this characteristic temperature increases with the logarithm of beam intensity. The observed phenomenon is attributed to the competing effects of the dark- and light-induced conductivities.

Cheng, Li-Jen↗

Development of High-Q SRF Structures by Nitrogen Doping for Superconducting Electron Linacs

One of the most exciting recent developments in superconducting RF technology has been the discovery of a nitrogen-doping process which can reliably increase the superconducting quality factor of niobium resonators well above 10 10 at high frequency (>1 GHz). This process is now well demonstrated in particular for TESLA-style 9-cell cavities at 1.3 GHz. Nitrogen doping can significantly increase efficiency of the cavities as well as the cryogenic efficiency accelerators, and allowing significant capital cost reductions. This project will expand the application of nitrogen doping into the low-frequency regime and investigate and quantify effects on the quality factor in low frequency superconducting structures from the nitrogen doping process.

43 PARTICLE ACCELERATORS↗

Investigating Effects of Operational Parameters on the Rate of Electrochemical Cleaning of Chromium Deposits on Strontium-Doped Lanthanum Manganite Cathodes in Solid Oxide Fuel Cells

Chromium poisoning of the cathode remains a significant obstacle to the stable long-term performance of solid oxide fuel cells. This study reports, a quick, in-situ mitigation method, called electrochemical cleaning. By applying a mild anodic bias, the electrochemical deposition reactions of chromium-containing species are reversed. Chromium vapor species are formed, freeing active electrochemical sites in the air electrode. An LSM/YSZ-based cell was exposed to Cr vapors at 800ºC and then subjected to electrochemical cleaning. Cell performance recovery was evidenced by current-voltage and EIS measurements. Chromium removal was verified using SEM and EDS analyses. The cyclability of the electrochemical cleaning was tested by repeated poisoning and cleaning of another cell. Investigation into the effect of cell operating parameters (current density and cell temperature) on the rate of cleaning is discussed.

30 DIRECT ENERGY CONVERSION↗