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A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.
A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.
The proposed work seeks to conduct a basic study by applying experimental and computational methods to obtain quantitative influence of helium sink strength and proximity on He bubble nucleation and growth in He-irradiated nano-scale metallic structures, and the ensuing deformation mechanisms and mechanical properties. We utilized a combination of nano-scale in-situ tension and compression experiments on low-energy He-irradiated samples combined with site-specific microstructural characterization and modeling efforts. We also investigated the mechanical deformation of nano-architected materials, i.e. nanolattices which are comprised of 3-dimensional interwoven networks of hollow tubes, with the wall thickness in the nanometer range. This systematic approach will provide us with critical information for identifying key factors that govern He bubble nucleation and growth upon irradiation as a function of both sink strength and sink proximity through an experimentally-confirmed physical understanding. As an outgrowth of these efforts, we performed irradiations with self-ions (Ni 2+ ) on Ni-Al-Zr metallic glass nanolattices to assess their resilience against radiation damage rather than He-ion implantation. We focused our attention on studying individual bcc/fcc interfaces within a single nano structure (nano-pillar or a hollow tube): a single Fe (bcc)-Cu (fcc) boundary per pillar oriented perpendicular to the pillar axes, as well as pure bcc and fcc nano structures. Additional interfaces of interest include bcc/bcc and metal/metallic glass all within a single nano-structure volume. The model material systems are: (1) pure single crystalline Fe and Cu, (2) a single Fe (bcc)-Cu (fcc) boundary per nano structure (3) a single metal–metallic glass, all oriented non-parallel to the loading direction so that their fracture strength can be tested. A nano-fabrication approach, which involves e-beam lithography and templated electroplating, as well as two-photon lithography, was utilized, which enabled precise control of the initial microstructure control. Experimentally determined stress-strain relationships were enhanced by in-situ SEM observations coupled with TEM microstructural characterization of the same samples before and after deformation (irradiated and as-fabricated) and atomistic (MD) modeling. A comprehensive suite of experiments was conducted to quantitatively assess the key parameters for He bubble nucleation and growth by independently varying the sink strength, sink proximity, and He implantation temperature and dose. The implantations were conducted at Sandia and Los Alamos National Labs (CINT). Nano structuress containing He-enriched interfaces and irradiation-damaged microstructure were tested under uniaxial tension to assess embrittlement, resulting boundary strength, and deformation mechanisms. Results of this work helped identify which types of interfaces are particularly resilient against radiation damage.
The experimental study intends to generate data to validate the theoretical predictions on defect accumulation and recovery, as well as to investigate microstructural evolution and transmutant precipitation in mono- and poly-crystalline tungsten using ion implantation.
Particle accelerators have been essential tools of particle physics since initial development in the early twentieth century, with commercial applications soon following each successive advancement. Furthermore, particle accelerators today are found in diverse use, ranging from ion-implantation of consumer electronics to both imaging and treatment of cancers.
A photoconductive switch consisting of an optically actuated photoconductive material, e.g. a wide bandgap semiconductor such as SiC, situated between opposing electrodes. The electrodes are created using various methods in order to maximize reliability by reducing resistive heating, current concentrations and filamentation, and heating and ablation due to the light source. This is primarily accomplished by the configuration of the electrical contact geometry, choice of contacts metals, annealing, ion implantation, creation of recesses within the SiC, and the use of coatings to act as encapsulants and anti-reflective layers.
Ion beam modification of noble metal electrical contact coatings can achieve suitable friction and wear behavior with inherently stable low ECR. For example, this method of producing Au electrical contact coatings can produce wear properties similar to electroplated hard Au, but without the environmental concerns due to stringent OSHA regulations on the use and disposal of toxic chemicals associated with Au electroplating baths. Integration of physical vapor deposition techniques with ion implantation can produce noble metal coatings with surfaces modified to achieve the desired balance between adhesion/friction/wear and electrical contact resistance on a commercial scale.
A method and apparatus for reading unique identifiers of an integrated circuit. The unique identifiers may be physically unclonable functions (PUFs), formed by high energy ions implanted into semiconductor material of the integrated circuit. The method may include electrically or optically stimulating each of the PUFs and sensing with an optical sensor optical characteristics of resulting light emitted from the PUFs. Then the method may include comparing values associated with the optical characteristics of the PUFs with groups of stored values in a circuit database. Each of the groups of stored values may be associated with optical characteristics of PUFs of a known authentic circuit. The method may then include the controller providing verification of authenticity of the integrated circuit when each of the values associated with the optical characteristics of the PUFs match the stored values of at least one of the groups in the circuit database.
PolySi:Ga/SiO2 passivated contacts were prepared using ion implantation and dopant inks to introduce Ga into a-Si. Following crystallization anneals these p-type contacts exhibited improved passivation (iVoc of about 730 mV) over B-doped passivated contacts for solar cells.
The construction of an alkali-metal ion source is presented. It allows the acceleration of rubidium ions to an energy that enables the penetration through monolayers of graphene and hexagonal boron nitride. Rb atoms are sublimated from an alkali-metal dispenser. The ionization is obtained by surface ionization and desorption from a hot high work function surface. The ion current is easily controlled by the temperature of ionizer. Scanning Tunneling Microscopy measurements confirm ion implantation.
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The effect of implantation of 1.5-MeV nitrogen ions on the friction and wear characteristics of pure iron sliding against steel was studied in a pin-on disk apparatus. An implantation dose of 5 x 10 to the 17th power ions/sq cm was used. Small reductions in initial and steady-state wear rates were observed for nitrogen-implanted iron riders as compared with unimplanted controls. Auger electron spectroscopy revealed a subsurface Gaussian nitrogen distribution with a maximum concentration of 15 at. % at a depth of 8 x 10 to the -7th m. A similar analysis within the wear scar of an implanted rider after 20 microns of wear yielded only background nitrogen concentration, thus giving no evidence for diffusion of nitrogen beyond the implanted range.
Argon ion kinetic energy spectra at different discharge voltages (between 480 and 600 V) of a commercial cold cathode ion source IQP10/63 are reported. The high kinetic energy cut-off depends on the discharge voltage and the corresponding plasma potential due to excess positive charges which is found to be about 136 V. Exposure of single layer hexagonal boron nitride on rhodium to the beam of the ion source leads to the formation of nanotents, i.e., stable atomic protrusions. A positive bias voltage is applied to the target sample to block the positive ions produced by the ion source. However, application of a positive bias potential (800 eV), which is higher than the kinetic energy cut-off, still allows the formation of nanotents and its observation with scanning tunneling microscopy. This indicates that the ion source also produces neutral atoms with kinetic energies higher than the penetration threshold across a single layer of hexagonal boron nitride.
This study reports on the formation of 25Mg-bearing precipitates and voids in cubic phase silicon carbide (3C-SiC) single crystals implanted to 9.6×1016 25Mg+/cm2 at 673 K and subsequently annealed at 1073 and 1573 K for 2, 6 and 12 h in an Ar environment. Unidirectionally aligned tetrahedral precipitates are observed around the Mg profile peak, many of which are likely cubic MgC2 and tetragonal Mg2Si particles or their precursor structures. There is also evidence that suggests a possible formation of core (MgC2)-shell (Mg2Si) structure in some of the large precipitates. In addition, small spherical voids are observed near the surface, along with the larger faceted voids in the region of maximum vacancy concentration. 25Mg segregation takes place with a dominant fraction of small atomic clusters. The study provides important results needed to fully assess SiC for potential fusion applications.
Ion implantation-induced effects were studied in Ge implanted β-Ga 2 O 3 with the fluence and energy of 3 × 10 13 cm -2 /60 keV, 5 × 10 13 cm -2 /100 keV, and 7 × 10 13 cm -2 /200 keV using analytical electron microscopy via scanning/transmission electron microscopy, electron energy loss spectroscopy, and precession electron diffraction via TopSpin. Imaging shows an isolated band of damage after Ge implantation, which extends ~130 nm from the sample surface and corresponds to the projected range of the ions. Electron diffraction demonstrates that the entirety of the damage band is the κ phase, indicating an implantation-induced phase transition from β to κ-Ga 2 O 3 . Post-implantation annealing at 1150 °C for 60 s under the O 2 atmosphere led to a back transformation of κ to β; however, an ~17 nm damage zone remained at the sample surface. Despite the back transformation from κ to β with annealing, O K-edge spectra show changes in the fine structure between the pristine, implanted, and implanted-annealed samples, and topspin strain analysis shows a change in strain between the two samples. These data indicate differences in the electronic/chemical structure, where the change of the oxygen environment extended beyond the implantation zone (~130 nm) due to the diffusion of Ge into the bulk material, which, in turn, causes a tensile strain of 0.5%. This work provides a foundation for understanding of the effects of ion implantation on defect/phase evolution in β-Ga 2 O 3 and the related recovery mechanism, opening a window toward building a reliable device for targeted applications.
The interaction between Sb atoms and micropores of a getter layer in silicon is studied. The getter layer was obtained via implantation of Sb{sup +} ions into silicon and subsequent heat treatment processes. The antimony atoms located in the vicinity of micropores are captured by micropores during gettering annealing and lose its electrical activity. The activation energy of capture process to the pores for antimony is lower than that of antimony diffusion in silicon deformation fields around microvoids on the diffusion process.
The crystallization of silicon-on-insulator films, implanted with high doses of hydrogen ions, upon annealing with millisecond pulses is studied. Immediately after hydrogen-ion implantation, the formation of a three-phase structure composed of silicon nanocrystals, amorphous silicon, and hydrogen bubbles is detected. It is shown that the nanocrystalline structure of the films is retained upon pulsed annealing at temperatures of up to {approx}1000 Degree-Sign C. As the temperature of the millisecond annealing is increased, the nanocrystal dimensions increase from 2 to 5 nm and the fraction of the nanocrystalline phase increases to {approx}70%. From an analysis of the activation energy of crystal phase growth, it is inferred that the process of the crystallization of silicon films with a high ({approx}50 at %) hydrogen content is limited by atomic-hydrogen diffusion.
Accurate information on electronic stopping power is fundamental for broad advances in materials science, electronic industry, space exploration, and sustainable energy technologies. In the case of slow heavy ions in light targets, current codes and models provide significantly inconsistent predictions, among which the Stopping and Range of Ions in Matter (SRIM) code is the most commonly used one. Experimental evidence, however, has demonstrated considerable errors in the predicted ion and damage profiles based on SRIM stopping powers. In this work, electronic stopping powers for Cl, Br, I, and Au ions are experimentally determined in two important functional materials, SiC and SiO{sub 2}, based on a single ion technique, and new electronic stopping power values are derived over the energy regime from 0 to 15 MeV, where large deviations from the SRIM predictions are observed. As an experimental validation, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) are utilized to measure the depth profiles of implanted Au ions in SiC for energies from 700 keV to 15 MeV. The measured ion distributions by both RBS and SIMS are considerably deeper than the SRIM predictions, but agree well with predictions based on our derived stopping powers.