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Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method
The formation of Ge layers on boron-doped Si (001) substrates by our sputter epitaxy method has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the substrate resistance, and flat Ge layers are obtained on Si substrates with 0.015 Ω cm resistivity. Highly boron-doped Si substrates cause a transition in the dislocation structure from complex dislocations with 60° dislocation glide planes to 90° pure-edge dislocations, resulting in the formation of flat Ge layers. Furthermore, we have found that the surface morphology of the Ge layers improves with increasing Ge layer thickness. Ge atoms migrating on the deposited Ge layers tend to position themselves at the reactive sites, where the reactivity is related to the number of bonding contacts between the Ge atom and the surface. This modifies the surface morphology, resulting in a flatter surface. Boron dopants together with the sputter epitaxy method effectively suppress the growth of Ge islands and result in the formation of flat Ge layers.
Extracting the effective mass of electrons in transparent conductive oxide thin films using Seebeck coefficient
A method is proposed that combines Seebeck coefficient and carrier concentration to determine the electron effective mass of transparent conductive oxide (TCO) thin films. Experiments were conducted to test the validity of this approach on the transparent conductive Ga-doped ZnO thin films deposited by magnetron sputtering. An evident agreement of the calculated electron effective mass of the films is observed between the proposed approach and the previous studies. Besides, the optical carrier concentration and mobility derived from the calculated electron effective mass and spectroscopic ellipsometry using a complex dielectric function are consistent with those from direct Hall-effect measurement. The agreements suggest that Seebeck coefficient can serve as an alternative tool for extracting the effective mass of electrons in TCO films.
Carbon doping induced peculiar transport properties of boron nitride nanoribbons p-n junctions
By applying nonequilibrium Green's function combined with density functional theory, we investigate the electronic transport properties of carbon-doped p-n nanojunction based on hexagonal boron nitride armchair nanoribbons. The calculated I-V curves show that both the center and edge doping systems present obvious negative differential resistance (NDR) behavior and excellent rectifying effect. At low positive bias, the edge doping systems possess better NDR performance with larger peak-to-valley ratio (∼10{sup 5}), while at negative bias, the obtained peak-to-valley ratio for both of the edge and center doping systems can reach the order of 10{sup 7}. Meanwhile, center doping systems present better rectifying performance than the edge doping ones, and giant rectification ratio up to 10{sup 6} can be obtained in a wide bias range. These outstanding transport properties are explained by the evolution of the transmission spectra and band structures with applied bias, together with molecular projected self-consistent Hamiltonian eigenvalues and eigenstates.
Enhanced thermoelectric figure of merit in strained Tl-doped Bi{sub 2}Se{sub 3}
We explain recent experimental findings on Tl-doped Bi{sub 2}Se{sub 3} by determining the electronic and transport properties by first-principles calculations and semi-classical Boltzmann theory. Though Tl-doping introduces a momentum-dependent spin-orbit splitting, the effective mass of the carriers is essentially not modified, while the band gap is reduced. Tl is found to be exceptional in this respect as other dopants modify the dispersion, which compromises thermoelectricity. Moreover, we demonstrate that only after Tl-doping strain becomes an efficient tool for enhancing the thermoelectric performance. A high figure of merit of 0.86 is obtained for strong p-doping (7 × 10{sup 20} cm{sup −3}, maximal power factor) at 500 K under 2% tensile strain.
A carbon nanotube based resettable sensor for measuring free chlorine in drinking water
Free chlorine from dissolved chlorine gas is widely used as a disinfectant for drinking water. The residual chlorine concentration has to be continuously monitored and accurately controlled in a certain range around 0.5–2 mg/l to ensure drinking water safety and quality. However, simple, reliable, and reagent free monitoring devices are currently not available. Here, we present a free chlorine sensor that uses oxidation of a phenyl-capped aniline tetramer (PCAT) to dope single wall carbon nanotubes (SWCNTs) and to change their resistance. The oxidation of PCAT by chlorine switches the PCAT-SWCNT system into a low resistance (p-doped) state which can be detected by probing it with a small voltage. The change in resistance is found to be proportional to the log-scale concentration of the free chlorine in the sample. The p-doping of the PCAT-SWCNT film then can be electrochemically reversed by polarizing it cathodically. This sensor not only shows good sensing response in the whole concentration range of free chlorine in drinking water but is also able to be electrochemically reset back many times without the use of any reagents. This simple sensor is ideally suited for measuring free chlorine in drinking water continuously.
LaTiO{sub 3}/KTaO{sub 3} interfaces: A new two-dimensional electron gas system
We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator, LaTiO{sub 3}, and a band insulator, KTaO{sub 3}. For LaTiO{sub 3}/KTaO{sub 3} interfaces, we observe metallic conduction from 2 K to 300 K. One serious technological limitation of SrTiO{sub 3}-based conducting oxide interfaces for electronics applications is the relatively low carrier mobility (0.5-10 cm{sup 2}/V s) of SrTiO{sub 3} at room temperature. By using KTaO{sub 3}, we achieve mobilities in LaTiO{sub 3}/KTaO{sub 3} interfaces as high as 21 cm{sup 2}/V s at room temperature, over a factor of 3 higher than observed in doped bulk SrTiO{sub 3}. By density functional theory, we attribute the higher mobility in KTaO{sub 3} 2DEGs to the smaller effective mass for electrons in KTaO{sub 3}.
Effect of kinetic energy on the doping efficiency of cesium cations into superfluid helium droplets
We present an experimental investigation of the effect of kinetic energy on the ion doping efficiency of superfluid helium droplets using cesium cations from a thermionic emission source. The kinetic energy of Cs{sup +} is controlled by the bias voltage of a collection grid collinearly arranged with the droplet beam. Efficient doping from ions with kinetic energies from 20 eV up to 480 V has been observed in different sized helium droplets. The relative ion doping efficiency is determined by both the kinetic energy of the ions and the average size of the droplet beam. At a fixed source temperature, the number of doped droplets increases with increasing grid voltage, while the relative ion doping efficiency decreases. This result implies that not all ions are captured upon encountering with a sufficiently large droplet, a deviation from the near unity doping efficiency for closed shell neutral molecules. We propose that this drop in ion doping efficiency with kinetic energy is related to the limited deceleration rate inside a helium droplet. When the source temperature changes from 14 K to 17 K, the relative ion doping efficiency decreases rapidly, perhaps due to the lack of viable sized droplets. The size distribution of the Cs{sup +}-doped droplet beam can be measured by deflection and by energy filtering. The observed doped droplet size is about 5 × 10{sup 6} helium atoms when the source temperature is between 14 K and 17 K.
Improved conversion efficiency of dye sensitized solar cell using Zn doped TiO{sub 2}-ZrO{sub 2} nanocomposite
TiO{sub 2}-ZrO{sub 2} and Zn doped TiO{sub 2}-ZrO{sub 2} nanocomposites were prepared by hydrothermal method for dye sensitized solar cell (DSSC) application. The structural and optical properties were investigated by X –ray diffraction (XRD) and UV-Visible spectroscopy respectively. XRD results revealed the formation of material in nano size. The average crystallite size is 22.32 nm, 17.41 nm and 6.31 nm for TiO{sub 2}, TiO{sub 2}-ZrO{sub 2} and Zn doped TiO{sub 2}-ZrO{sub 2} nanocomposites respectively. The optical bandgap varies from 2.04 eV to 3.75 eV. Dye sensitized solar cells were fabricated using the prepared material. Pomegranate juice was used as a sensitizer and graphite coated conducting glass plate was used as counter electrode. The I – V characteristics were recorded to measure photo response of DSSC. Photovoltaic parameter like open circuit voltage, power conversion efficiency, and fill factor were evaluated for fabricated solar cell. The power conversion efficiency of DSSC fabricated with TiO{sub 2}, TiO{sub 2}-ZrO{sub 2} and Zn doped TiO{sub 2}-ZrO{sub 2} nanocomposites were found 0.71%, 1.97% and 4.58% respectively.
Electronic structure and thermoelectric transport properties of the golden Th{sub 2}S{sub 3}-type Ti{sub 2}O{sub 3} under pressure
A lot of physical properties of Th{sub 2}S{sub 3}-type Ti{sub 2}O{sub 3} have investigated experimentally, hence, we calculated electronic structure and thermoelectric transport properties by the first-principles calculation under pressure. The increase of the band gaps is very fast from 30 GPa to 35 GPa, which is mainly because of the rapid change of the lattice constants. The total density of states becomes smaller with increasing pressure, which shows that Seebeck coefficient gradually decreases. Two main peaks of Seebeck coefficients always decrease and shift to the high doping area with increasing temperature under pressure. The electrical conductivities always decrease with increasing temperature under pressure. The electrical conductivity can be improved by increasing pressure. Electronic thermal conductivity increases with increasing pressure. It is noted that the thermoelectric properties is reduced with increasing temperature.
Indium Zinc Oxide Mediated Wafer Bonding for III-V/Si Tandem Solar Cells
Silicon-based tandem solar cells are desirable as a high efficiency, economically viable approach to one sun or low concentration photovoltaics. We present an approach to wafer bonded III-V/Si solar cells using amorphous indium zinc oxide (IZO) as an interlayer. We investigate the impact of a heavily doped III-V contact layer on the electrical and optical properties of bonded test samples, including the predicted impact on tandem cell performance. We present economic modeling which indicates that the path to commercial viability for bonded cells includes developing low-cost III-V growth and reducing constraints on material smoothness. If these challenges can be surmounted, bonded tandems on Si can be cost-competitive with incumbent PV technologies, especially in low concentration, single axis tracking systems.
Beryllium as an acceptor in silicon.
Electronic properties of beryllium doped silicon studied with IR absorption spectroscopy and electrical measurements, describing Be thermal diffusion
Deep impurity trapping concepts for power semiconductor devices
High voltage semiconductor switches using deep impurity doped silicon now appear feasible for high voltage (1-100 kV), high power (10 Kw) switching and protection functions for future space power applications. Recent discoveries have demonstrated several practical ways of gating deep impurity doped silicon devices in planar configurations and of electrically controlling their characteristics, leading to a vast array of possible circuit applications. A new family of semiconductor switching devices and transducers are possible based on this technology. New deep impurity devices could be simpler than conventional p-n junction devices and yet use the same basic materials and processing techniques. In addition, multiple functions may be possible on a single device as well as increased ratings.
High-Temperature Thermoelectric Energy Conversion
Theory of thermoelectric energy conversion at high temperatures and status of research on conversion materials reviewed in report. Shows highest values of thermoelectric figure of merit, Z, found in semiconductor materials. Semiconductors keep wide choice of elements and compounds. Electrical properties tailored to particular application by impurity doping and control of stoichiometry. Report develops definition of Z useful for comparing materials and uses it to evaluate potentials of different classes of materialsmetals, semiconductors, and insulators.
Large Doping-Spike PtSi LWIR Focal Plane Arrays for Astronomy
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Semiconductor ohmic contact
A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material, preferably a group III-V semiconductor material, having a narrower energy bandgap. The degenerate region is doped with tin to increase the crystal lattice of the region to more closely approximate the crystal lattice of the one surface of the semiconductor device. The degenerate region is compensatingly doped with a P type conductivity modifier. An electrical contact is applied to one surface of the degenerate region forming an ohmic contact with the semiconductor device.
Conversion of type of quantum well structure
A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.
Conversion of Type of Quantum Well Structure
A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.