Search NASA⌕ Search

SEARCH · Search NASA

Results for “Charge-Coupled Devices”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6

A CCD System for Photometry of Direct and Spectroscopic Images

A charge-coupled device (CCD) for direct imagery at the focus of a ground-based telescope and for high dispersion spectroscopy of stars is evaluated. The CCD is an RCA SID 53612 thinned, buried channel array of 512x320 30-micron square pixels that are back-illuminated and refrigerated to about -60 C in a rugged, RF-shielded vacuum housing. The double-correlated sampling (integrator) readout system, the Z80 microprocessor readout control system, and the data collection system are described. The readout noise is 120 electron-hole pairs (ehp) per pixel per readout, the thermal dark current is 50 ehp/pixel/sec, and the scale of the 12-bit analog-to-digital converter is 25 ehp/AD unit. Unique features of this system are compared to other astronomical implementations of the same model of CCD.

Frecker, J. E.↗

High-density Schottky barrier IRCCD sensors for remote sensing applications

It is pointed out that the ambitious goals envisaged for the next generation of space-borne sensors challenge the state-of-the-art in solid-state imaging technology. Studies are being conducted with the aim to provide focal plane array technology suitable for use in future Multispectral Linear Array (MLA) earth resource instruments. An important new technology for IR-image sensors involves the use of monolithic Schottky barrier infrared charge-coupled device arrays. This technology is suitable for earth sensing applications in which moderate quantum efficiency and intermediate operating temperatures are required. This IR sensor can be fabricated by using standard integrated circuit (IC) processing techniques, and it is possible to employ commercial IC grade silicon. For this reason, it is feasible to construct Schottky barrier area and line arrays with large numbers of elements and high-density designs. A Pd2Si Schottky barrier sensor for multispectral imaging in the 1 to 3.5 micron band is under development.

Elabd, H.↗

Experience with 800 x 800 virtual phase and 500 x 500 three-phase CCD imagers

A description of the Galileo/Institute for Astronomy charge-coupled device (CCD) imaging system and its initial operation has been presented previously. Originally designed to operate a 500 x 500 backside illuminated three-phase CCD, the system has been modified to allow use of either the 500 x 500 sensor or the TI 800 x 800 virtual phase CCD. The modifications for the operation of the virtual phase CCD and current system performance with each type of sensor are discussed. A description is given of the implementation of various techniques discovered at the Jet Propulsion Laboratory that improve imager performance. These techniques include tri-level clocking of the virtual phase CCD to eliminate spurious charge generation in the serial register, the use of ultraviolet light flood with the backside thinned 500 x 500 three-phase device to dramatically improve the quantum efficiency in the blue, and the practical elimination of deferred charge in the three-phase device. Results of astronomical observations with each sensor are presented.

Hlivak, R. J.↗

Potential of CCDs for UV and X-ray plasma diagnostics

A program is under way to develop charge-coupled device (CCD) sensors for space-based X-ray astronomy imaging spectrometers. To date, laboratory line-emission spectra have been acquired throughout the range of 277 to 8000 eV (carbon through copper K-alpha emission) and CCD sensitivity has been demonstrated throughout the range of 1.1 through 8000 eV. Image resolution is excellent, limited almost entirely by the 15 micron pixel size. These results are presented and specialized techniques are described which permit such low energy response, high spectral resolution, and efficient charge collection. Finally, analysis is presented of one particular CCD characteristic which currently limits UV and X-ray performance: charge diffusion.

Janesick, J. R.↗

Dual-Sampler Processor Digitizes CCD Output

Circuit for processing output of charge-coupled device (CCD) imager provides increased time for analog-to-digital conversion, thereby reducing bandwidth required for video processing. Instead of one sampleand-hold circuit of conventional processor, improved processor includes two sample-and-hold circuits alternated with each other. Dual-sampler processor operates with lower bandwidth and with timing requirements less stringent than those of single-sample processor.

Salomon, P. M.↗

The future scientific CCD

Since the first introduction of charge-coupled devices (CCDs) in 1970, CCDs have been considered for applications related to memories, logic circuits, and the detection of visible radiation. It is pointed out, however, that the mass market orientation of CCD development has left largely untapped the enormous potential of these devices for advanced scientific instrumentation. The present paper has, therefore, the objective to introduce the CCD characteristics to the scientific community, taking into account prospects for further improvement. Attention is given to evaluation criteria, a summary of current CCDs, CCD performance characteristics, absolute calibration tools, quantum efficiency, aspects of charge collection, charge transfer efficiency, read noise, and predictions regarding the characteristics of the next generation of silicon scientific CCD imagers.

Janesick, J. R.↗

The prototype MOSAIC detector

The prototype of the MOSAIC (Mosaicked Optical Self-scanned Array Imaging Camera) system, a photon-counting detector designed for use in the far ultraviolet, is described. MOSAIC has a two-dimensional format of 2400 x 2400 pixels, and is easily expandable. Readout is accomplished electronically via charge-coupled devices, making possible remote observations. Preliminary results of computer simulations of the system are presented.

Weistrop, D.↗

An apparent gravitational lens with an image separation of 2.6 arc min

Observations are reported which confirm Paczynski's 1986 speculation that the previously known (Arp and Hazard, 1980) pair of 19th magnitude quasars 1146+111B,C are actually two images of a single object produced by a gravitational lens. The image split is 157 arcsec, more than 20 times greater than any previously reported, thus indicating an exceptionally massive lensing object. The data supporting the lens hypothesis are remarkably similar, high signal-to-noise, moderate resolution spectra of the two components. Both spectra show strong Mg II 2798-angstrom emission at z = 1.012 plus or minus 0.001 with indistinguishable redshifts (delta v = 126 plus or minus 309 km/s), widths (FWHM = 64 plus or minus 4 angstroms) and detailed profile shapes. Both spectra also show broad troughs at 6180 angstroms and several weaker continuum features. Neither object exhibits the O II 3727-A forbidden line which is frequently strong in Mg II emission objects. If the foreground galaxy clustering apparent in a deep R band charge-coupled device image proves insufficient to explain the large image splitting, other possibilities such as massive dark objects (e.g. a black hole of about 10 to the 15th solar masses) or a cosmic string may be indicated.

Turner, E. L.↗

CCD charge collection efficiency and the photon transfer technique

The charge-coupled device (CCD) has shown unprecendented performance as a photon detector in the areas of spectral response, charge transfer, and readout noise. Recent experience indicates, however, that the full potential for the CCD's charge collection efficiency (CCE) lies well beyond that which is realized in currently available devices. A definition of CCE performance is presented and a standard test tool (the photon transfer technique) for measuring and optimizing this important CCD parameter is introduced. CCE characteristics for different types of CCDs are compared; the primary limitations in achieving high CCE performance are discussed, and the prospects for future improvement are outlined.

Janesick, J.↗

Integrated optics in an electrically scanned imaging Fourier transform spectrometer

An efficient, lightweight and stable, Fourier transform spectrometer was developed. The mechanical slide mechanism needed to create a path difference was eliminated by the use of retro-reflecting mirrors in a monolithic interferometer assembly in which the mirrors are not at 90 degrees to the propagation vector of the radiation, but rather at a small angle. The resulting plane wave fronts create a double-sided inteferogram of the source irradiance distribution which is detected by a charge-coupled device image sensor array. The position of each CCD pixel in the array is an indication of the path difference between the two retro-reflecting mirrors in the monolithic optical structure. The Fourier transform of the signals generated by the image sensor provide the spectral irradiance distribution of the source. For imaging, the interferometer assembly scans the source of irradiation by moving the entire instrument, such as would occur if it was fixedly mounted to a moving platform, i.e., a spacecraft. During scanning, the entrace slot to the monolithic optical structure sends different pixels to corresponding interferograms detected by adjacent columns of pixels of the image sensor.

Breckinridge, James B.↗

Solid state television camera

The design, fabrication, and tests of a solid state television camera using a new charge-coupled imaging device are reported. An RCA charge-coupled device arranged in a 512 by 320 format and directly compatible with EIA format standards was the sensor selected. This is a three-phase, sealed surface-channel array that has 163,840 sensor elements, which employs a vertical frame transfer system for image readout. Included are test results of the complete camera system, circuit description and changes to such circuits as a result of integration and test, maintenance and operation section, recommendations to improve the camera system, and a complete set of electrical and mechanical drawing sketches.

Source record↗

Development of InSb charge-coupled infrared imaging devices: Linear imager

The following results were accomplished in the development of charge coupled infrared imaging devices: (1) a four-phase overlapping gate with 9 transfers (2-bits) and 1.0-mil gate lengths was successfully operated, (2) the measured transfer efficiency of 0.975 for this device is in excellent agreement with predictions for the reduced gate length device, (3) mask revisions of the channel stop metal on the 8582 mask have been carried out with the result being a large increase in the dc yield of the tested devices, (4) partial optical sensitivity to chopped blackbody radiation was observed for an 8582 9-bit imager, (5) analytical consideration of the modulation transfer function degradation caused by transfer inefficiency in the CCD registers was presented, and (6) for larger array lengths or for the insertion of isolated bits between sensors, improvements in InSb fabrication technology with corresponding decrease in the interface state density are required.

Phillips, J. D.↗

Further development of an indium antimonide (InSb)Charge-Coupled Infrared Imaging Device (CCIRID), 20-element linear imager

Problems encountered in the development of an indium antimonide charge coupled device for infrared imaging and real time signal processing on the focal plane are summarized. A new generation chip is described which contains, 2, 4, and 20-element imagers, a 4-element TDI array, a monolithic gated charge integrator, and test devices. A system study of a future LANDSAT sensor system configured around an InSb TDi array is considered.

Source record↗

Charge-coupled differential amplifier

Device solves problem of differential voltage gain in sampled-data metal-oxide semiconductor, producing gain at any frequency compatible with CCD operation, with low noise, low power, good linearity, and high stability.

Hewes, C. R.↗

Development of a Shuttle Infrared Telescope Facility /SIRTF/ fine guidance sensor

Fine guidance technology development for the Shuttle Infrared Telescope Facility (SIRTF) centers upon the use of a single multiple-star-tracking sensor to provide the position information necessary to produce three-axis attitude control signals for precision payload pointing. The effort described in this paper is concerned with the development of a fine guidance sensor that employs a high-density charge-coupled imaging device for producing position information signals by using star fields. Multiple star position information produces three-axis position error signals that are used to update inertial reference gyros. The sensor employs advanced position interpolation algorithms to enhance field-of-view resolution and to correct for optical aberrations inherent in spatially chopped star images resulting from the telescope's movable secondary mirror. Operation of the sensor is under the control of a high-performance microcomputer that provides both autonomy and flexibility in a guidance application.

Salomon, P. M.↗

Indium antimonide infrared CCD linear imaging arrays with on-chip preprocessing

A description is presented of the fabrication of a new InSb CCD chip based on an improved process which eliminates the limitations inherent with the earlier techniques. This process includes planar junction formation and an aluminum and SiO2 material system which is amenable to state-of-the-art chemical and plasma delineation techniques. Further, the new chip integrates for the first time in monolithic format InSb IR detectors with an InSb CCD. The reported experiments represent the first operation of an InSb infrared CCD array. In addition to fuller characterization of the 20-element charge-coupled infrared imaging device, several factors which influence device performance are currently being addressed. These include surface state density, the CCD output circuit, and storage time (dark current).

Thom, R. D.↗

Cooled slow-scan performance of a 512 by 320 element charge-coupled imager

A 512 x 320 element charge coupled imager has been fabricated and tested under cooled slow scan conditions to evaluate the device's performance under a variety of long integration and slow scan readout conditions. Operation in a low blooming mode of operation enables the sensor to be exposed with portions of the image heavily overexposed, without those areas spreading into adjacent picture areas. Device design, layout, and operating mode are described, and presents experimental results, including displayed images taken under cooled slow scan operation, are reported.

Rodgers, R. L., III↗

A 190 by 244 charge-coupled area image sensor with interline transfer organization

A 190 x 244 element charge coupled area image sensor has been designed, fabricated and tested. This sensor employs an interline transfer organization and buried n-channel technology. It features a novel on-chip charge integrator and a distributed floating gate amplifier for high and low light level applications. The X-Y element count has been chosen to establish the capability of producing an NTSC compatible video signal. The array size is also compatible with the Super 8 lens format. The first few sample devices have been successfully operated at full video bandwidth for both high and low light levels with the charge amplifier system.

Walsh, L. R.↗