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Remote switching circuit utilizes voltage logic to switch on desired circuit. Circuit controls rotating multi-range pressure transducers in jet engine testing and can be used in coded remote circuit activator where sequence of switching has to occur in defined length of time to prevent false or undesired circuit activation.
Langley interactive computerized circuit analysis capability /LICCA/ enables designer to draw electronic circuit diagrams on cathode ray tube screen. This information is submitted as input to user-selected circuit analysis program. LICCA accommodates binary logic circuits and circuits with discrete components, and monitors operator's instructions to detect errors.
Complementary and p-channel MOS integrated circuits made by four commercial manufacturers were investigated for sensitivity to radiation environment. The circuits were irradiated with 1.5 MeV electrons. The results are given for electrons and for the Co-60 gamma radiation equivalent. The data are presented in terms of shifts in the threshold potentials and changes in transconductances and leakages. Gate biases of -10V, +10V and zero volts were applied to individual MOS units during irradiation. It was found that, in most of circuits of complementary MOS technologies, noticable changes due to radiation appear first as increased leakage in n-channel MOSFETs somewhat before a total integrated dose 10 to the 12th power electrons/sg cm is reached. The inability of p-channel MOSFETs to turn on sets in at about 10 to the 13th power electrons/sq cm. Of the circuits tested, an RCA A-series circuit was the most radiation resistant sample.
Method of circuit development separates electrical functions into noninterdependent parts, uses standard, commercially available circuit elements, and establishes unified circuit-packaging arrangement. Packaging scheme is cost-effective, does not compromise electrical circuit performance from video to UHF frequencies, and leaves circuits accessible for modification and adjustment.
The circuit presented is simple and small enough to be included in a typical battery charge/power control assembly, yet provides the advantage of a complete ground-type battery reconditioning discharge. Test results on the circuit when used to recondition two 24 cell, 20 A-h nickel-cadmium batteries are given. These results show that a battery reconditioned with this circuit returns to greater than 90 percent of its original capacity (greater than nameplate capacity) and follows a typical new battery degradation curve even after over 20,000 simulated orbital cycles for a 4 year period. Applications of the circuit are considered along with recommendations relative to its use. Its application in low voltage (22 to 36 Vdc) power systems and in high voltage (100 to 150 Vdc) power systems is discussed. The implications are that the high voltage systems have a greater need for battery reconditioning than their low voltage counterparts, and that using these circuit techniques, the expected life of a battery in low Earth orbit can be up to 5 years.
A method for analyzing the radiation sensitivity of an integrated circuit is described to determine the components. The application of a narrow radiation beam to portions of the circuit is considered. The circuit is operated under normal bias conditions during the application of radiation in a dosage that is likely to cause malfunction of at least some transistors, while the circuit is monitored for failure of the irradiated transistor. When a radiation sensitive transistor is found, then the radiation beam is further narrowed and, using a fresh integrated circuit, a very narrow beam is applied to different parts of the transistor, such as its junctions, to locate the points of greatest sensitivity.
Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.
A high-speed logarithmic-amplifier circuit for a PDS microdensitometer is discussed. The circuit is designed around a 757P log-amp module which replaces the FMI 531 'Negative Log/Anti-log' device of the original. The new amplifier is capable of producing undistorted profiles of rapidly changing, dense images over the available range of scanning speeds. The circuit board has been designed to directly replace the manufacturer supplied unit; neither electrical nor mechanical modifications of the basic PDS are required. The performance of the circuit is illustrated through its effects on the overall Modulation Transfer Function of the instrument and by scans of a well-exposed stellar image. Circuit diagrams and parts lists are presented.
An electrical testing structure and method is described whereby a test structure is fabricated on a large scale integrated circuit wafer along with the circuit components and has a van der Pauw cross resistor in conjunction with a bridge resistor and a split bridge resistor, the latter having two channels each a line width wide, corresponding to the line width of the wafer circuit components, and with the two channels separated by a space equal to the line spacing of the wafer circuit components. The testing structure has associated voltage and current contact pads arranged in a two by four array for conveniently passing currents through the test structure and measuring voltages at appropriate points to calculate the sheet resistance, line width, line spacing, and line pitch of the circuit components on the wafer electrically.
Techniques appropriate to boards containing CMOS circuits detailed. Document presents procedure for applying thin conformal coating to such electronic assemblies as printed-circuit boards and wire-wrapped boards. Coating is from 1 to 7 mils (25 to 178 micrometers) thick and composed of room-temperature-vulcanizing (RTV) silicone. Specifies materials, equipment, spraying method, and quality requirements. Takes into account special needs of circuits made with complementary metal-oxide/semiconductor (CMOS) devices on circuit boards. Special attention given to preventing damage by electrostatic discharge, to which CMOS circuits especially sensitive.
Electrical properties of solenoids imitated for tests of control circuits. Simulation circuit imitates voltage and current responses of two engine-controlling solenoids. Used in tests of programs of digital engine-control circuits, also provides electronic interface with circuits imitating electrical properties of pressure sensors and linear variable-differential transformers. Produces voltages, currents, delays, and discrete turnon and turnoff signals representing operation of solenoid in engine-control relay. Many such circuits used simulating overall engine circuitry.
Packaged magnetic bubble test circuits made with 4-micron period ion-implanted circuits were operated over -55 to +110 C. The circuits used bidirectional transfer and nondestructive detection and were made on bismuth-containing magnetic garnet films. Passivated circuits that incorporated an improved transfer conductor design were operated on films with higher Gilbert damping parameters. Potential advantages to using films with lower bubble aspect ratios for ion-implanted circuits are discussed. However nondestructive read-out detection was not realized with these 'flat' bubbles.
As the rate of energy release in a double layer with voltage delta V is P approx I delta V, a double layer must be treated as a part of a circuit which delivers the current I. As neither double layer nor circuit can be derived from magnetofluid models of a plasma, such models are useless for treating energy transfer by means of double layers. They must be replaced by particle models and circuit theory. A simple circuit is suggested which is applied to the energizing of auroral particles, to solar flares, and to intergalactic double radio sources. Application to the heliospheric current systems leads to the prediction of two double layers on the Sun's axis which may give radiations detectable from Earth. Double layers in space should be classified as a new type of celestial object (one example is the double radio sources). It is tentatively suggested in X-ray and Gamma-ray bursts may be due to exploding double layers (although annihilation is an alternative energy source). A study of how a number of the most used textbooks in astrophysics treat important concepts like double layers, critical velocity, pinch effects and circuits is made.
A processing circuit is provided for correcting for input parameter variations, such as data and clock signal symmetry, phase offset and jitter, noise and signal amplitude, in incoming data signals. An asymmetry corrector circuit performs the correcting function and furnishes the corrected data signals to a convolutional encoder circuit. The corrector circuit further forms a regenerated clock signal from clock pulses in the incoming data signals and another clock signal at a multiple of the incoming clock signal. These clock signals are furnished to the encoder circuit so that encoded data may be furnished to a modulator at a high data rate for transmission.
Electronic circuit, called printer-port interface circuit (PPI) developed to overcome certain disadvantages of previous methods for connecting IBM PC or PC-compatible computer to other equipment. Has both reading and writing modes of operation. Very simple, requiring only six integrated circuits. Provides for moderately fast rates of transfer of data and uses existing unmodified circuit card in IBM PC. When used with appropriate software, circuit converts printer port on IBM PC, XT, AT, or compatible personal computer to general purpose, 8-bit-data, 16-bit address bus that connects to multitude of devices.
Thermocouple-signal-conditioning circuit acting in conjunction with thermocouple, exhibits electrical behavior of voltage in series with resistance. Combination part of input bridge circuit of controller. Circuit configured for either of two specific applications by selection of alternative resistances and supply voltages. Includes alarm circuit detecting open circuit in thermocouple and provides off-scale output to signal malfunctions.
On a distributed memory parallel computer, the complete exchange (all-to-all personalized) communication pattern requires each of n processors to send a different block of data to each of the remaining n - 1 processors. This pattern is at the heart of many important algorithms, most notably the matrix transpose. For a circuit switched hypercube of dimension d(n = 2(sup d)), two algorithms for achieving complete exchange are known. These are (1) the Standard Exchange approach that employs d transmissions of size 2(sup d-1) blocks each and is useful for small block sizes, and (2) the Optimal Circuit Switched algorithm that employs 2(sup d) - 1 transmissions of 1 block each and is best for large block sizes. A unified multiphase algorithm is described that includes these two algorithms as special cases. The complete exchange on a hypercube of dimension d and block size m is achieved by carrying out k partial exchange on subcubes of dimension d(sub i) Sigma(sup k)(sub i=1) d(sub i) = d and effective block size m(sub i) = m2(sup d-di). When k = d and all d(sub i) = 1, this corresponds to algorithm (1) above. For the case of k = 1 and d(sub i) = d, this becomes the circuit switched algorithm (2). Changing the subcube dimensions d, varies the effective block size and permits a compromise between the data permutation and block transmission overhead of (1) and the startup overhead of (2). For a hypercube of dimension d, the number of possible combinations of subcubes is p(d), the number of partitions of the integer d. This is an exponential but very slowly growing function and it is feasible over these partitions to discover the best combination for a given message size. The approach was analyzed for, and implemented on, the Intel iPSC-860 circuit switched hypercube. Measurements show good agreement with predictions and demonstrate that the multiphase approach can substantially improve performance for block sizes in the 0 to 160 byte range. This range, which corresponds to 0 to 40 floating point numbers per processor, is commonly encountered in practical numeric applications. The multiphase technique is applicable to all circuit-switched hypercubes that use the common e-cube routing strategy.
Circuits of rectangular waveguides coupled to a cylindrical cavity have been studied. Two types of circuits were developed: a high-power four-way power divider/combiner with less than 0.5 dB insertion loss over a 20 percent bandwidth and a high-power four-port cross-over circuit with less than 0.7 dB insertion loss and 20 dB isolation at X-band. To demonstrate the feasibility of the first circuit, a power combiner was built by connecting four Gunn oscillators to the four rectangular waveguide ports of the radial waveguide. A power combining efficiency of over 70 percent was achieved at X-band. The second circuit was used to feed a dual-polarization cross-slot antenna backed by a cylindrical cavity.