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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

Visible Light Responsive Catalysts Using Quantum Dot-Modified Ti02 for Air and Water Purification

The method of photocatalysis utilizing titanium dioxide, TiO2, as the catalyst has been widely studied for trace contaminant control for both air and water applications because of its low energy consumption and use of a regenerable catalyst. Titanium dioxide requires ultraviolet light for activation due to its band gap energy of 3.2 eV. Traditionally, Hg-vapor fluorescent light sources are used in PCO reactors and are a setback for the technology for space application due to the possibility of Hg contamination. The development of a visible light responsive (VLR) TiO2-based catalyst could lead to the use of solar energy in the visible region (approx.45% of the solar spectrum lies in the visible region; > 400 nm) or highly efficient LEDs (with wavelengths > 400 nm) to make PCO approaches more efficient, economical, and safe. Though VLR catalyst development has been an active area of research for the past two decades, there are few commercially available VLR catalysts; those that are available still have poor activity in the visible region compared to that in the UV region. Thus, this study was aimed at the further development of VLR catalysts by a new method - coupling of quantum dots (QD) of a narrow band gap semiconductor (e.g., CdS, CdSe, PbS, ZnSe, etc.) to the TiO2 by two preparation methods: 1) photodeposition and 2) mechanical alloying using a high-speed ball mill. A library of catalysts was developed and screened for gas and aqueous phase applications, using ethanol and 4-chlorophenol as the target contaminants, respectively. Both target compounds are well studied in photocatalytic systems serve as model contaminants for this research. Synthesized catalysts were compared in terms of preparation method, type of quantum dots, and dosage of quantum dots.

Coutts, Janelle L.↗
NASA NTRS2009

Evaluation of a Programmable Voltage-Controlled MEMS Oscillator, Type SiT3701, Over a Wide Temperature Range

Semiconductor chips based on MEMS (Micro-Electro-Mechanical Systems) technology, such as sensors, transducers, and actuators, are becoming widely used in today s electronics due to their high performance, low power consumption, tolerance to shock and vibration, and immunity to electro-static discharge. In addition, the MEMS fabrication process allows for the miniaturization of individual chips as well as the integration of various electronic circuits into one module, such as system-on-a-chip. These measures would simplify overall system design, reduce parts count and interface, improve reliability, and reduce cost; and they would meet requirements of systems destined for use in space exploration missions. In this work, the performance of a recently-developed MEMS voltage-controlled oscillator was evaluated under a wide temperature range. Operation of this new commercial-off-the-shelf (COTS) device was also assessed under thermal cycling to address some operational conditions of the space environment

Patterson, Richard↗
NASA NTRS2014

Visible-Light-Responsive Catalysts Using Quantum Dot-Modified TiO2 for Air and Water Purification

Photocatalysis, the oxidation or reduction of contaminants by light-activated catalysts, utilizing titanium dioxide (TiO2) as the catalytic substrate has been widely studied for trace contaminant control in both air and water applications. The interest in this process is due primarily to its low energy consumption and capacity for catalyst regeneration. Titanium dioxide requires ultraviolet light for activation due to its relatively large band gap energy of 3.2 eV. Traditionally, Hg-vapor fluorescent light sources are used in PCO reactors; however, the use of mercury precludes the use of this PCO technology in a spaceflight environment due to concerns over crew Hg exposure. The development of a visible-light responsive (VLR) TiO2-based catalyst would eliminate the concerns over mercury contamination. Further, VLR development would allow for the use of ambient visible solar radiation or highly efficient LEDs, both of which would make PCO approaches more efficient, flexible, economical, and safe. Though VLR catalyst development has been an active area of research for the past two decades, there are few commercially available VLR catalysts. Those VLR catalysts that are commercially available do not have adequate catalytic activity, in the visible region, to make them competitive with those operating under UV irradiation. This study was initiated to develop more effective VLR catalysts through a novel method in which quantum dots (QD) consisting of narrow band gap semiconductors (e.g., CdS, CdSe, PbS, ZnSe, etc.) are coupled to TiO2 via two preparation methods: 1) photodeposition and 2) mechanical alloying using a high-speed ball mill. A library of catalysts was developed and screened for gas and aqueous phase applications using ethanol and 4-chlorophenol as the target contaminants, respectively. Both target compounds are well studied in photocatalytic systems and served as model contaminants for this research. Synthesized catalysts were compared in terms of preparation method, nature of the quantum dots, and dosage of quantum dots.

visible light↗
NASA NTRS2001

Microfabricated Chemical Sensors for Aerospace Fire Detection Applications

The detection of fires on-board commercial aircraft is extremely important for safety reasons. Although dependable fire detection equipment presently exists within the cabin, detection of fire within the cargo hold has been less reliable and susceptible to false alarms. A second, independent method of fire detection to complement the conventional smoke detection techniques, such as the measurement of chemical species indicative of a fire, will help reduce false alarms and improve aircraft safety. Although many chemical species are indicative of a fire, two species of particular interest are CO and CO2. This paper discusses microfabricated chemical sensor development tailored to meet the needs of fire safety applications. This development is based on progress in three types of technology: 1) Micromachining and microfabrication (Microsystem) technology to fabricate miniaturized sensors. 2) The use of nanocrystalline materials to develop sensors with improved stability combined with higher sensitivity. 3) The development of high temperature semiconductors, especially silicon carbide. The individual sensor being developed and their level of maturity will be presented.

Hunter, Gary W.↗
NASA NTRSDate not supplied

Alternating Direct Current (ADC) - A New Form of Efficient Energy Transmission for Renewable Sources

The prevailing means of electricity transmission through Direct Current (DC) and Alternating Current (AC) have limitations with the ongoing transition to renewable energy sources. In this paper, we discuss a new form of energy transmission, known as alternating direct current (ADC) that would provide significant savings in energy consumption and simultaneously allow efficient utilization of generated energy from renewable sources. This has become possible due to substantial advances in electronics and optoelectronics technologies since the days of Nicholas Tesla and Thomas Edison. Recent efforts of implementing the proposed ADC technology in relevant environments have demonstrated significant energy savings and opened a new paradigm that has the potential to provide an efficient and cost-effective pathway for transition to renewable energy sources even with the existing grid infrastructure. The DC power utilization initiated by Thomas Edison can be stored in battery arrangement but suffers from line loss and hence is not efficient for long-distance transmission. However, AC power developed by Nicholas Tesla cannot be stored efficiently but can be transmitted over long distances due to significantly lower line losses. Currently, AC power is the global foundational energy transmission methodology used because of events that took place over 135 years ago involving Edison, Tesla, and Westinghouse, and since AC power can transmit long distances from power plants to end users efficiently and economically. Approximately 50 years ago, the introduction of semiconductors in commercialized electronic devices and products changed the way people consume electricity. Also, over the years, the expanding adaptation of nonlinear loads has adversely affected the grid stability and hence the utility infrastructures worldwide.

AC↗
NASA NTRS2005

Long-duration Operation of 2-micron Coherent Doppler Lidar in Space

The reliability and lifetime of laser remote sensing systems that can operate autonomously over a sufficiently long period are mainly constrained by the laser diode arrays (LDAs) used for pumping their laser transmitters. The lifetime of a 2-micron coherent lidar operating in space is particularly of concern in lieu of required pump pulse duration of Thulium and Holmium solid state lasers (approx. 1msec) that are considerably longer than those of more widely used 1-micron lasers (< 0.2 msec). A factor of 5 to 10 times longer pulse duration can easily translate to over an order of magnitude shorter lifetime for a typical commercially available high-power 2-D array. Therefore, it is imperative to address the lifetime and reliability of LDAs for pumping 2-micron lasers by exploring all the potential options that significantly prolong their life meeting the required operational lifetime of space-based coherent Doppler lidars. The leading causes of sudden failure and premature degradation of LDAs are intrinsic semiconductor defects, optical facet breakdown resulting from excessive localized heating, and thermo-mechanical stresses due to the extreme thermal cycling of the laser active regions1-2. Long pulse operation grossly amplifies the impact of these failure/degradation causes, particularly the thermo-mechanical stresses due to pulse-to-pulse thermal cycling. Therefore, several experimental setups have been developed to investigate each of the failure mechanisms and causes of premature degradation in order to evaluate various package designs, define the best operating parameters, and to guide the technology advancement, leading to highly reliable and very long lifetime LDAs5. Several areas of improvement in the packaging and fabrication process of laser diodes have already been identified and efforts towards implementing these improvements are well underway. These efforts include the use of advanced high thermal conductivity materials for packaging of laser diode arrays and new fabrication techniques for mechanically attaching laser diode bars and submounts. But even using the existing LDAs, it may be possible to increase the lifetime by careful selection of the package type, number of bars per package and their pitch, operational temperature, and operating parameters such repetition rate, pulsewidth, and applied current. Obviously, the LDA specification and operational parameters will involve a system level trade analysis to ensure that the lidar instrument meets its performance objectives. One goal of this work is to enable such trade analysis by evaluating LDAs from different suppliers in different package types and quantifying their performance as a function of their operational parameters.

Amzajerdian, Farzin↗
NASA NTRS2002

Cryogenic Electronics Being Developed for Space Operation

Planetary exploration missions and deep space probes require electrical power management and control systems that can operate efficiently and reliably in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units to maintain the surrounding temperature of the onboard electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures would not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures. Thereby, such electronics would reduce system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results because semiconductor and dielectric materials have better behavior and tolerance in their electrical and thermal properties at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center is focusing on the research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and in deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial off-the-shelf as well as developed components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, dc-dc converters, operational amplifiers, and oscillators are also being investigated for potential use in low-temperature applications. For example, the output response of an advanced oscillator at room temperature and at -190 C is shown. Most oscillators can operate at temperatures down to only -55 C. It can be seen that, for this oscillator, the low temperature of -196 C changed the leading and trailing edges of the oscillator pulses by producing overshoot. The research and development efforts performed under the Low Temperature Electronics Program at Glenn are being carried out through collaboration with other Government agencies, industrial and aerospace companies, and academia. The program supports missions as well as technology development efforts at NASA's Goddard Space Flight Center and Langley Research Center, and the Jet Propulsion Laboratory.

Patterson, Richard L.↗
NASA NTRS2003

Microelectromechanical Systems (MEMS) Broadband Light Source Developed

A miniature, low-power broadband light source has been developed for aerospace applications, including calibrating spectrometers and powering miniature optical sensors. The initial motivation for this research was based on flight tests of a Fabry-Perot fiberoptic temperature sensor system used to detect aircraft engine exhaust gas temperature. Although the feasibility of the sensor system was proven, the commercial light source optically powering the device was identified as a critical component requiring improvement. Problems with the light source included a long stabilization time (approximately 1 hr), a large amount of heat generation, and a large input electrical power (6.5 W). Thus, we developed a new light source to enable the use of broadband optical sensors in aerospace applications. Semiconductor chip-based light sources, such as lasers and light-emitting diodes, have a relatively narrow range of emission wavelengths in comparison to incandescent sources. Incandescent light sources emit broadband radiation from visible to infrared wavelengths; the intensity at each wavelength is determined by the filament temperature and the materials chosen for the filament and the lamp window. However, present commercial incandescent light sources are large in size and inefficient, requiring several watts of electrical power to obtain the desired optical power, and they emit a large percentage of the input power as heat that must be dissipated. The miniature light source, developed jointly by the NASA Glenn Research Center, the Jet Propulsion Laboratory, and the Lighting Innovations Institute, requires one-fifth the electrical input power of some commercial light sources, while providing similar output light power that is easily coupled to an optical fiber. Furthermore, it is small, rugged, and lightweight. Microfabrication technology was used to reduce the size, weight, power consumption, and potential cost-parameters critical to future aerospace applications. This chip-based light source has the potential for monolithic fabrication with on-chip drive electronics. Other uses for these light sources are in systems for vehicle navigation, remote sensing applications such as monitoring bridges for stress, calibration sources for spectrometers, light sources for space sensors, display lighting, addressable arrays, and industrial plant monitoring. Two methods for filament fabrication are being developed: wet-chemical etching and laser ablation. Both yield a 25-mm-thick tungsten spiral filament. The proof-of-concept filament shown was fabricated with the wet etch method. Then it was tested by heating it in a vacuum chamber using about 1.25 W of electrical power; it generated bright, blackbody radiation at approximately 2650 K. The filament was packaged in Glenn's clean-room facilities. This design uses three chips vacuum-sealed with glass tape. The bottom chip consists of a reflective film deposited on silicon, the middle chip contains a tungsten filament bonded to silicon, and the top layer is a transparent window. Lifetime testing on the package will begin shortly. The emitted optical power is expected to be approximately 1.0 W with the spectral peak at 1.1 mm.

Tuma, Margaret L.↗
NASA NTRS2010

Operation of a Giant Magnetoresistive (GMR) Digital Isolator, Type IL510, Under Extreme Temperatures

A relatively new type of signal isolation based on Giant Magnetoresistive (GMR) technology was investigated for potential use in harsh temperature environments. Operational characteristics of the 2Mbps single channel, IL510-Series commercial-off-the-shelf (COTS) digital isolator chip was obtained under extreme temperature exposure and thermal cycling in the range of -190 C to +120 C. The isolator was evaluated in terms of its output signal delivery and stability, output rise (t(sub r)) and fall times (t(sub f)), and propagation delays at 50% level between input and output during low to high (t(sub PLH)) and high to low (t(sub PHL)) transitions. The device performed very well throughout the entire test temperature range as no significant changes occurred either in its function or in its output signal timing characteristics. The limited thermal cycling, which comprised of 12 cycles between -190 C and +120 C, also had no influence on its performance. In addition, the device packaging underwent no structural damage due to the extreme temperature exposure. These preliminary results indicate that this semiconductor chip has the potential for use in a temperature range that extends beyond its specified regime. Additional and more comprehensive testing, however, is required to establish its operation and reliability and to determine its suitability for long-term use in space exploration missions.

Patterson, Richard↗
NASA NTRS2006

NASA Solar Array Demonstrates Commercial Potential

A state-of-the-art solar-panel array demonstration site at NASA's Dryden Flight Research Center provides a unique opportunity for studying the latest in high-efficiency solar photovoltaic cells. This five-kilowatt solar-array site (see Figure 1) is a technology-transfer and commercialization success for NASA. Among the solar cells at this site are cells of a type that was developed in Dryden Flight Research Center s Environmental Research Aircraft and Sensor Technology (ERAST) program for use in NASA s Helios solar-powered airplane. This cell type, now denoted as A-300, has since been transferred to SunPower Corporation of Sunnyvale, California, enabling mass production of the cells for the commercial market. High efficiency separates these advanced cells from typical previously commercially available solar cells: Whereas typical previously commercially available cells are 12 to 15 percent efficient at converting sunlight to electricity, these advanced cells exhibit efficiencies approaching 23 percent. The increase in efficiency is due largely to the routing of electrical connections behind the cells (see Figure 2). This approach to increasing efficiency originated as a solution to the problem of maximizing the degree of utilization of the limited space available atop the wing of the Helios airplane. In retrospect, the solar cells in use at this site could be used on Helios, but the best cells otherwise commercially available could not be so used, because of their lower efficiencies. Historically, solar cells have been fabricated by use of methods that are common in the semiconductor industry. One of these methods includes the use of photolithography to define the rear electrical-contact features - diffusions, contact openings, and fingers. SunPower uses these methods to produce the advanced cells. To reduce fabrication costs, SunPower continues to explore new methods to define the rear electrical-contact features. The equipment at the demonstration site includes two fixed-angle solar arrays and one single-axis Sun-tracking array. One of the fixed arrays contains typical less-efficient commercial solar cells and is being used as a baseline for comparison of the other fixed array, which contains the advanced cells. The Sun-tracking array tilts to follow the Sun, using an advanced, real-time tracking device rather than customary pre-programmed mechanisms. Part of the purpose served by the demonstration is to enable determination of any potential advantage of a tracking array over a fixed array. The arrays are monitored remotely on a computer that displays pertinent information regarding the functioning of the arrays.

Creech, Gray↗
NASA NTRS1994

A look into the crystal ball: The next 25 years

The PTTI Planning Meeting was born at about the same time as the atomic definition of the unit of time, the second. This use of the cesium resonance was made possible by advances in quantum electronics during the preceding decade which resulted in commercial availability of cesium, rubidium, and hydrogen clocks and frequency standards. Twenty-five years later these types of clocks still are the backbone of time and frequency applications; together with a variety of crystal oscillators, transmitters, and receivers, as well as signal distribution, conditioning and switching systems, atomic clocks are an essential part of the infrastructure of modern navigation and communication technology. The next 25 years undoubtedly will see a pervasive expansion of PTTI into the infrastructure that supports and leverages industrial, social, environmental, defense, and even individual human activities. Speculation as to what capabilities, services, and personal conveniences may become available will be limited by two factors: the degree to which existing device concepts can be made more affordable and reliable, and the ability to miniaturize for purposes of compatibility with electronic integration. With regard to the latter, history teaches us that the required technological breakthrough is unlikely to originate in existing technology; thus, we may expect a paradigm shift in PTTI device concepts not unlike the shift in the 1960s from vacuum tubes to semiconductors.

Hellwig, Helmut↗
NASA NTRS2001

Atomically Flat Surfaces Developed for Improved Semiconductor Devices

New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the small tilt angle between the crystal "basal" plane and the polished wafer surface. These steps are used in normal SiC epi film growth in a process known as stepflow growth to produce material for device fabrication. In the new process, the first step is to etch an array of mesas on the SiC wafer top surface. Then, epi film growth is carried out in the step flow fashion until all steps have grown themselves out of existence on each defect-free mesa. If the size of the mesas is sufficiently small (about 0.1 by 0.1 mm), then only a small percentage of the mesas will contain an undesired screw defect. Mesas with screw defects supply steps during the growth process, allowing a rough surface with unwanted hillocks to form on the mesa. The improvement in SiC epi surface morphology achievable with the new technology is shown. An atomic force microscope image of a typical SiC commercial epilayer surface is also shown. A similar image of an SiC atomically flat epi surface grown in a Glenn laboratory is given. With the current screw defect density of commercial wafers (about 5000 defects/cm2), the yield of atomically free 0.1 by 0.l mm mesas is expected to be about 90 percent. This is large enough for many types of electronic and optical devices. The implementation of this new technology was recently published in Applied Physics Letters. This work was initially carried out in-house under a Director's Discretionary Fund project and is currently being further developed under the Information Technology Base Program.

Powell, J. Anthony↗
NASA NTRS2017

Taking SiC Power Devices to the Final Frontier: Addressing Challenges of the Space Radiation Environment

Silicon carbide power device technology has the potential to enable a new generation of aerospace power systems that demand high efficiency, rapid switching, and reduced mass and volume in order to expand space-based capabilities. For this potential to be realized, SiC devices must be capable of withstanding the harsh space radiation environment. Commercial SiC components exhibit high tolerance to total ionizing dose but to date, have not performed well under exposure to heavy ion radiation representative of the on-orbit galactic cosmic rays. Insertion of SiC power device technology into space applications to achieve breakthrough performance gains will require intentional development of components hardened to the effects of these highly-energetic heavy ions. This work presents heavy-ion test data obtained by the authors over the past several years for discrete SiC power MOSFETs, JFETs, and diodes in order to increase the body of knowledge and understanding that will facilitate hardening of this technology to space radiation effects. Specifically, heavy-ion irradiation data taken under different bias, temperature, and ion beam conditions is presented for devices from different manufacturers, and the emerging patterns discussed.

Power semiconductor devices↗
NASA NTRS2007

Hypersonic Composites Resist Extreme Heat and Stress

Through research contracts with NASA, Materials and Electrochemical Research Corporation (MER), of Tucson, Arizona, contributed a number of technologies to record-breaking hypersonic flights. Through this research, MER developed a coating that successfully passed testing to simulate Mach 10 conditions, as well as provide several additional carbon-carbon (C-C) composite components for the flights. MER created all of the leading edges for the X-43A test vehicles at Dryden-considered the most critical parts of this experimental craft. In addition to being very heat resistant, the coating had to be very lightweight and thin, as the aircraft was designed to very precise specifications and could not afford to have a bulky coating. MER patented its carbon-carbon (C-C) composite process and then formed a spinoff company, Frontier Materials Corporation (FMC), also based in Tucson. FMC is using the patent in conjunction with low-cost PAN (polyacrylonitrile)-based fibers to introduce these materials to the commercial markets. The C-C composites are very lightweight and exceptionally strong and stiff, even at very high temperatures. The composites have been used in industrial heating applications, the automotive and aerospace industries, as well as in glass manufacturing and on semiconductors. Applications also include transfer components for glass manufacturing and structural members for carrier support in semiconductor processing.

Source record↗
NASA NTRS2013

High-Power Single-Mode 2.65-micron InGaAsSb/AlInGaAsSb Diode Lasers

Central to the advancement of both satellite and in-situ science are improvements in continuous-wave and pulsed infrared laser systems coupled with integrated miniaturized optics and electronics, allowing for the use of powerful, single-mode light sources aboard both satellite and unmanned aerial vehicle platforms. There is a technological gap in supplying adequate laser sources to address the mid-infrared spectral window for spectroscopic characterization of important atmospheric gases. For high-power applications between 2 to 3 micron, commercial laser technologies are unsuitable because of limitations in output power. For instance, existing InP-based laser systems developed for fiber-based telecommunications cannot be extended to wavelengths longer than 2 micron. For emission wavelengths shorter than 3 micron, intersubband devices, such as infrared quantum cascade lasers, become inefficient due to band-offset limitations. To date, successfully demonstrated singlemode GaSb-based laser diodes emitting between 2 and 3 micron have employed lossy metal Bragg gratings for distributed- feedback coupling, which limits output power due to optical absorption. By optimizing both the quantum well design and the grating fabrication process, index-coupled distributed-feedback 2.65-micron lasers capable of emitting in excess of 25 mW at room temperature have been demonstrated. Specifically, lasers at 3,777/cm (2.65 micron) have been realized to interact with strong absorption lines of HDO and other isotopologues of H2O. With minor modifications of the optical cavity and quantum well designs, lasers can be fabricated at any wavelength within the 2-to-3-micron spectral window with similar performance. At the time of this reporting, lasers with this output power and wavelength accuracy are not commercially available. Monolithic ridge-waveguide GaSb lasers were fabricated that utilize secondorder lateral Bragg gratings to generate single-mode emission from InGaAsSb/ AlInGaAsSb multi-quantum well structures. The device fabrication utilizes etched index-coupled gratings in the top AlGaAsSb cladding of the laser chip along the ridge waveguide, whereas commercial lasers that emit close to this wavelength include loss-coupled metal gratings that limit the output power of the laser. Semiconductor-laser-based spectrometers can be used to replace gas sensors currently used in industry and government. With the availability of high-power laser sources at mid-infrared wavelengths, sensors can target strong fundamental gas absorption lines to maximize instrument sensitivity.

Frez, Clifford F.↗
NASA NTRS2005

A Ka-Band Wide-Bandgap Solid-State Power Amplifier: Architecture Performance Estimates

Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solidstate power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents the results of a study to investigate power-combining technology and SSPA architectures that can enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results of the study indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. The proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This corresponds to MMIC requirements of 5- to 10-W output power and >48 percent PAE. For the three proposed architectures [1], detailed analysis and design of the power combiner are presented. The first architecture studied is based on a 16-way septum combiner that offers low loss and high isolation over the design band of 31 to 36 GHz. Analysis of a 2-way prototype septum combiner had an input match >25 dB, output match >30 dB, insertion loss <0.02 dB, and isolation >30 dB over the design band. A 16-way design, based on cascading this combiner in a binary fashion, is documented. The second architecture is based on a 24-way waveguide radial combiner. A prototype 24-way radial base was analyzed to have an input match >30 dB (under equal excitation of all input ports). The match of the mode transducer that forms the output of a radial combiner was found to be >27 dB. The functional bandwidth of the radial base and mode transducer, which together will form a radial combiner/divider, exceeded the design band. The third architecture employs a 32-way, parallel-plate radial combiner. Simulation results indicated an input match >24 dB, output match >22 dB, insertion loss <0.23 dB, and adjacent port isolation >20 dB over the design band. All three architectures utilize a low-loss MMIC amplifier module based on commercial MMIC packaging and a custom microstrip-to-rectangular-waveguide transition. The insertion loss of the module is expected to be 0.45 dB over the design band.

Epp, L.↗