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Small organic molecule semi-conducting chromophores containing a pyridalthiadiazole, pyridaloxadiazole, or pyridaltriazole core structure are disclosed. Such compounds can be used in organic heterojunction devices, such as organic small molecule solar cells and transistors.
According to one embodiment, an apparatus includes at least one vertical transistor, where the at least one vertical transistor includes: a substrate including a semiconductor material; an array of three dimensional (3D) structures above the substrate; and an isolation region positioned between the 3D structures. Each 3D structure includes the semiconductor material. Each 3D structure also includes a first region having a first conductivity type and a second region having a second conductivity type, where the second region includes a portion of at least one vertical sidewall of the 3D structure.
In one embodiment, a method of forming a vertical transistor includes forming a layer comprising a semiconductor material above a substrate, defining three dimensional (3D) structures in the layer, forming a second region in at least one vertical sidewall of each 3D structure, and forming an isolation region between the 3D structures. In another embodiment, an apparatus includes at least one vertical transistor, where the at least one vertical transistor includes: a substrate comprising a semiconductor material, an array of 3D structures above the substrate, and an isolation region positioned between the 3D structures. Each 3D structure includes the semiconductor material. Each 3D structure also includes a first region having a first conductivity type and a second region having a second conductivity type, the second region including a portion of at least one vertical sidewall of the 3D structure.
Abstract not provided.
A computer-implemented method for compressing video data comprises receiving a sequence of video data values, each video data value being a digital value from a successive one of a plurality of pixels that form a video sensor, the sequence of video data values resulting from successive frames of video captured by the video sensor; extracting the video data values for each pixel in turn to create a plurality of pixel data streams, each pixel data stream including the video data value for each frame of captured video for the pixel; and applying data compression to each pixel data stream to create compressed data for each pixel data stream.
In one embodiment, an apparatus includes at least one vertical transistor, where the at least one vertical transistor includes: a substrate comprising a semiconductor material, an array of three dimensional (3D) structures above the substrate, a gate region, and an isolation region positioned between the 3D structures. Each 3D structure includes the semiconductor material. Each 3D structure also includes a first region having a first conductivity type and a second region having a second conductivity type, the second region including a portion of at least one vertical sidewall of the 3D structure. The gate region is present on a portion of an upper surface of the second region and the gate region is coupled to a portion of the at least one vertical sidewall of each 3D structure.
A computer-implemented method for compressing video data comprises receiving a sequence of video data values, each video data value being a digital value from a successive one of a plurality of pixels that form a video sensor, the sequence of video data values resulting from successive frames of video captured by the video sensor; extracting the video data values for each pixel in turn to create a plurality of pixel data streams, each pixel data stream including the video data value for each frame of captured video for the pixel; and applying data compression to each pixel data stream to create compressed data for each pixel data stream.
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An apparatus includes at least one vertical transistor, where the at least one vertical transistor includes: a substrate including a first semiconductor material, an array of three dimensional (3D) structures above the substrate, a sidewall heterojunction layer positioned on at least one vertical sidewall of each 3D structure, and an isolation region positioned between the 3D structures. Each 3D structure includes the first semiconductor material. The sidewall heterojunction layer includes a second semiconductor material, where the first and second semiconductor material have different bandgaps.
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Harnessing the wave-nature of charge carriers in solid state devices, electron optics investigates and exploits coherent phenomena, in analogy with optics and photonics. Typically, this requires complex electronic devices leveraging macroscopically coherent charge transport in two-dimensional electron gases and superconductors. Here, collective coherent effects are induced in a simple counterintuitive architecture by defect engineering. Deterministically introduced lattice defects in graphene enable the phase coherent charge transport by playing the role of potential barriers, instead of scattering centres as conventionally considered. Thus, graphene preserves its quasi-ballistic quantum transport and can support phase-matched charge carrier waves. Based on this approach, multiple electronic Fabry-Pèrot cavities are formed by creating periodically alternating defective and pristine nano-stripes through low energy electron-beam irradiation. Indeed, defective stripes behave as partially reflecting mirrors and resonantly confine the charge carrier waves within the pristine areas, giving rise to Fabry-Pèrot resonant modes. These modes experimentally manifest as sheet resistance oscillations, as also confirmed by Landauer-Büttiker simulations. Moreover, these coherent phenomena survive up to 30 K for both polarities of charge carriers, contrarily to traditional monopolar electrostatically created Fabry-Pèrot interferometers. Our study positions defective graphene as an innovative platform for coherent electronic devices, with potential applications in nano and quantum technologies.
Hexagonal boron nitride (hBN), also known as white graphite, is a transparent layered crystal with a wide bandgap. Its crystal structure resembles graphite, featuring layers composed of honeycomb lattices held together through van der Waals forces. The layered crystal structure of hBN facilitates exfoliation into thinner flakes and makes it highly anisotropic in in-plane and out-of-plane directions. Unlike graphite, hBN is both insulating and transparent, making it an ideal material for isolating devices from the environment and acting as a waveguide. As a result, hBN has found extensive applications in optical devices, electronic devices, and quantum photonic devices. This comprehensive tutorial aims to provide readers with a thorough understanding of hBN, covering its synthesis, lattice and spectroscopic characterization, and various applications in optoelectronic and quantum photonic devices. This tutorial is designed for both readers without prior experience in hBN and those with expertise in specific fields seeking to understand its relevance and connections to others.
Electronic charge injection instability in silicon nitride metal-insulator-semiconductor devices
Colloidal nanocrystal electronic devices including multiple types of nanocrystal device elements including nanocrystal metallic electrodes, nanocrystal insulators, and nanocrystal insulators. Colloidal nanocrystal electronic devices may be produced by forming multiple nanocrystal electronic device elements on a substrate.
Electron microprobe analyzer for failure analysis of silicon planar devices, discussing integrated circuit metallization
An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.
The major goals of the project consisted of acquiring insight in spin-dependent quantum coherent electronic transport phenomena arising from spin-orbit interaction, via experiments on semiconductor heterostructures and thin film semimetals patterned into mesoscopic and nanoscale geometries. The solid-state physics findings contain insight potentially useful for the creation of new quantum states of matter, for spin operations in quantum information processing, for future spin electronics, and for other future functionalities of power-saving electronic devices. The subject was of fundamental interest, but was also of long-term applied interest for quantum devices, spintronics devices, and general electronic devices. The experiments were conducted by low-temperature electronic magnetotransport in nanoscale structures of length scales similar to the quantum phase- and spin-coherence lengths and the carrier mean-free paths in the materials. Emphasis was placed on quantum coherence and spin coherence, to understand coherent spin-dependent electronic processes, on transport of electrons with very long mean-free path (ballistic transport), on the transfer of electron spin to nuclear spin (dynamic nuclear spin polarization in bismuth), and on the study of materials with quantum states emerging from spin-orbit interaction and electron-electron interaction (bismuth iridates). In two-dimensional electron systems in quantum wells of the narrow-bandgap semiconductors InAs and InGaAs the objectives included the characterization of quantum states arising from the Aharonov-Casher quantum-mechanical phase as an electromagnetic dual of the Aharonov-Bohm phase. Objectives also included quantum electronic transport at the mesoscopic scale on the semimetal bismuth in thin film form, and particularly on its strongly spin-orbit coupled surface states. An almost-strain-free method was developed to grow high-quality bismuth thin films. Devices fabricated on these films were then used to study a novel nuclear spin torque, whereby the bismuth carrier spin was transferred to the bismuth nuclei by the agency of both spin-orbit interaction and hyperfine interaction. Aspects of ballistic transport were studied in GaAs/AlGaAs heterostructures of very high mobility, and a hitherto unsuspected similarity was discovered between ballistic transport and hydrodynamic transport, of potential use in future power-saving electronic devices.
Electron mobility and lifetime variations effects on drift field in silicon junction devices