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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
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The Voyager spacecraft is subject to radiation from external natural space, from radioisotope thermoelectric generators and heater units, and from the internal environment where penetrating electrons generate surface ionization effects in semiconductor devices. Methods for radiation hardening and tests for radiation sensitivity are described. Results of characterization testing and sample screening of over 200 semiconductor devices in a radiation environment are summarized.
Developments in the fields of semiconductors and magnetics are surveyed. Materials, devices, theory, and fabrication technology are discussed. Important events up until the present time are reported, and events are interpreted through historical perspective. A brief analysis of forces which have driven the development of today's electronic technology and some projections of present trends are given. More detailed discussions are presented for four areas of contemporary interest: amorphous semiconductors, bubble domain devices, charge-coupled devices, and electron and ion beam techniques. Beam addressed magnetic memories are reviewed to a lesser extent.
The purpose of this presentation is to familiarize the people attending the JEDEC work meetings about the NEPP Program, and recent tasks we have undertaken. There is a description of the policy and testing guidelines in development and an explanation of the Government Working Group, a collaboration of several US government space agencies that come together to discuss topics relating to the reliable use of electronics. The presentation also includes a brief description of recent NASA accomplishments such as the launching/splash down of the SpaceX Crew Dragon and the launch of the next Mars rover.
The purpose of this presentation is to familiarize the people attending the JEDEC work meetings about the NEPP Program, and recent tasks we have undertaken. There is a description of the policy and testing guidelines in development and an explanation of the Government Working Group, a collaboration of several US government space agencies that come together to discuss topics relating to the reliable use of electronics. The presentation also includes a brief description of NASA events such as the landing of the next Mars rover in Feb 2021.
Previously reviewed presentation SAND2024-09493C with audio added
Understanding the age of semiconductor parts being built into devices and systems is of interest for manufacturing quality control. Power spectrum analysis (PSA) is a fast, non-destructive, sensitive method for examining semiconductor parts. This talk will cover the use of multivariate analysis on both PSA data and conventional current-voltage data generated prior to PSA analysis to create algorithms that can be automated to screen semiconductor parts for aging.
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Components passed stringent qualification tests tabulated and described. Destructive and nondestructive qualification testing confirmed parts capable of withstanding spacecraft environments without excessive degradation and have stable characteristics during operating lives. Testing assessed effects of electrical, environmental, and mechanical stresses in various levels and time durations.
Key elements of space qualification of opto-electric and photonic optical devices were overviewed. Efforts were concentrated on the reliability concerns of the devices needed for potential applications in space environments. The ultimate goal for this effort is to gradually establish enough data to develop a space qualification plan of newly developed specific photonic parts using empirical and numerical models to assess the life-time and degradation of the devices for potential long term space missions.
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Commercial silicon carbide and silicon Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. Changes in forward bias I-V characteristics are reported for fluences up to 4 x 10(exp 14) p/cm2. For devices of both material types, the series resistance is observed to increase as the fluence increases. The changes in series resistance result from changes in the free carrier concentration due to carrier removal by the defects produced. A simple model is presented that allows calculation of the series resistance of the device and then relates the carrier removal rate to the changes in series resistance. Using this model to calculate the carrier removal rate in both materials reveals that the carrier removal rate in silicon is less than that in silicon carbide, indicating that silicon is the more radiation tolerant material.
The NEPP mission is to provide guidance to NASA for the selection and application of microelectronics technologies, to improve understanding of the risks related to the use of these technologies in the space environment and to ensure that appropriate research is performed to meet NASA mission assurance needs.
Radiation requirements and trends. TID: 1) >90% of NASA applications are < 100 krads-Si in piecepart requirements. a) Many commercial devices (NVM and SDRAMs) meet or come close to this. b) Charge pump TID tolerance has improved an order magnitude over the last 10 years. 2) There are always a few programs with higher level needs and, of course, defense needs SEL: 1) Prefer none or rates that are considered low risk. a) Latent damage is a bear to deal with. 2) As we re packing cells tighter and even with lower Vdd, we re seeing SEL on commercial devices regularly (<90nm). a) Often in power conversion, I/O, or control areas. SEU: 1) It s not the bit errors, it s the SEFIs errors that are the biggest issues. a) Scrubbing concerns for risk, power, speed.
The Diamond AVIM optical fiber connector has been used for over a decade in flight environments. AVIM which stands for Aviation Intermediate Maintenance is always referenced as a fiber optic connector type from the DIN (Deutsches Institut fur Normung) family of optical fiber connectors. The newly available Mini AVIM and DMI (Definition Multimedia Interface) connectors also by Diamond provide similar features as the high performance AVIM with the added benefits of being small form factor for board mount and internal box use where long connectors and strain relief can not be accommodated. Transceiver, fiber laser technology and receiver optic technology based on small sized constraints will benefit the most by the reduction in connector form factor. It is for this reason that the Mini AVIM is being evaluated for multimode and single mode optical fiber use in both fiber based and cable based packaging configurations. In a fiber based termination, there are no cable materials to bond to the connector. The only bonding that is conducted is the mounting of the fiber with epoxy to the connector ferrules (which are called DMI ferrules). In a cable configuration, the compatibility of the connector subcomponents along with the upjacketing materials of the cable around the fiber needs to be considered carefully for termination fabrication. Cabled terminations will show greater insertion loss and high probability of failures during thermal cycling testing. This is due to the stressing of the combination of materials that each have different Coefficients of Thermal Expansion (CTE's) and that are bonded together to the connector subcomponents. As the materials flex during thermal excursions, forces are applied to the termination and can make the system fail if the grouping of materials (per their CTE's) are not compatible and this includes cable materials, epoxies, ferrule and connector body components. For this evaluation, multimode 100 micron core step index fiber was used for the fiber terminated condition, and single mode SMF-28 upjacketed with W.L. Gore Flexlite was used for the cabled configuration. For background purposes, a comparison is presented here for information purposes between the high performance AVIM connector features and the Mini AVIM small form factor connectors. Basic connector features are described here.