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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Tailoring Growth Interfaces of Virtual Substrates for Power Electronics

Power electronics materials are poised to play a critical role in fulfilling next generation energy needs, with up to 90% of future energy demand predicted to flow through power electronics at some point. AlxGa1-xN ranks high among candidate materials, having bipolar dopability, thermal and chemical stability and an ultra-wide bandgap. However, AlGaN growth is limited by a lack of lattice-matched substrates, ultimately stunting material quality at higher thicknesses needed for power electronics applications. Further, high power applications increasingly call for fully vertical device structures, necessitating a conductive substrate. Recently our group identified the (111) plane of TaC as a conductive surface lattice-matched to Al0.55Ga0.45N, taking inspiration from prior work of AlN and GaN binaries on carbide and boride substrates. In this talk we demonstrate the growth of (111)-oriented TaC by RF sputtering. We investigate the interface of TaC with sapphire and SiC substrates and identify means to suppress competing Ta2C nucleation in order to stabilize (111)-oriented TaC. Potential stacking sequences are identified with respect to crystal structure and observed twinning in the TaC films. We next assess structural changes and film recrystallization that results from face-to-face annealing of TaC thin films at high temperatures above 1500 degrees C. Changes to grain structure and domain size are assessed by x-ray diffraction and surface morphology is explored using atomic force microscopy. Figure 1 shows significant improvements to in- and out-of-plane strain following annealing along with the formation of terraced step edges at the film surface. Strain as a function of material composition and thickness is considered, as this may play a major role in future nucleation of AlGaN layers. (1) R. J. in a face-to-face configuration, as illustrated in the schematic at left. Kaplar et al 2017, ECS J. Solid State Sci. Technol. 6 Q3061; (2) D. M. Roberts et al 2022, https://arxiv.org/abs/2208.11769; (3) T. Aizawa et al 2008, J Crys Growth 310, 1 22; (4) R. Liu et al 2002, Appl. Phys. Lett. 81, 3182-3184.

ENGINEERING↗
DOE OSTI2025

Interwoven magnetic kagome metal overcomes geometric frustration

Magnetic kagome materials provide a platform for exploring magneto-transport phenomena, symmetry breaking and charge ordering driven by the intricate interplay among electronic structure, topology and magnetism. Yet geometric frustration in conventional kagome magnets limits their tunability. Here we propose a design strategy for interweaving quasi-one-dimensional magnetic Tb zigzag chains with non-magnetic Ti-based kagome bilayers in TbTi 3 Bi 4 . Comprehensive spectroscopic analyses reveal coexisting elliptical-spiral magnetic and spin-density-wave orders accompanied by a large ~90 meV band-folding gap. The combined magnetic and electronic state leads to a giant anomalous Hall conductivity of 10 5 Ω −1 cm −1 , which exceeds that observed in frustrated kagome analogues. These results establish TbTi 3 Bi 4 as a model system of magnetic kagome metals with strong electron–magnetism interactions and underscore the necessity of interweaving designed magnetic and charge layers separately to achieve tunable transport properties. This design strategy will enable the discovery of emergent quantum states and next-generation electronic materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1993

Long Duration Exposure Facility (LDEF) experiment M0003 meteoroid and debris survey

A survey of the meteoroid and space debris impacts on LDEF experiment M0003 was performed. The purpose of this survey was to document significant impact phenomenology and to obtain impact crater data for comparison to current space debris and micrometeoroid models. The survey consists of the following: photomicrographs of significant impacts in a variety of material types; accurate measurements of impact crater coordinates and dimensions for selected experiment surfaces; and databasing of the crater data for reduction, manipulation, and comparison to models. Large area surfaces that were studied include the experiment power and data system (EPDS) sunshields, environment exposure control canister (EECC) sunshields, and the M0003 signal conditioning unit (SCU) covers. Crater diameters down to 25 microns were measured and cataloged. Both leading (D8) and trailing (D4) edge surfaces were studied and compared. The EPDS sunshields are aluminum panels painted with Chemglaze A-276 white thermal control paint, the EECC sunshields are chromic acid-anodized aluminum, and the SCU covers are aluminum painted with S13GLO white thermal control paint. Typical materials that have documented impacts are metals, glasses and ceramics, composites, polymers, electronic materials, and paints. The results of this survey demonstrate the different response of materials to hypervelocity impacts. Comparison of the survey data to curves derived from the Kessler debris model and the Cour-Palais micrometeoroid model indicates that these models overpredict small impacts (less than 100 micron) and may underpredict large impacts (greater than 1000 micron) while having fair to good agreement for the intermediate impacts. Comparison of the impact distributions among the various surfaces indicates significant variations, which may be a function of material response effects, or in some cases surface roughness. Representative photographs and summary graphs of the impact data are presented.

Meshishnek, M. J.↗
NASA NTRS2015

Materials Characterization of Electron Beam Melted Ti-6Al-4V

An in-depth material characterization of Electron Beam Melted (EBM) Ti-6Al-4V material has been completed. Hot Isostatic Pressing (HIP) was utilized to close porosity from fabrication and also served as a material heat treatment to obtain the desired microstructure. The changes in the microstructure and chemistry from the powder to pre-HIP and post-HIP material have been analyzed. Computed tomography (CT) scans indicated porosity closure during HIP and high-density inclusions scattered throughout the specimens. The results of tensile and high cycle fatigue (HCF) testing are compared to conventional Ti-6Al-4V. The EBM Ti-6Al-4V had similar or superior mechanical properties compared to conventionally manufactured Ti-6Al-4V.

Titanium↗
NASA NTRS2016

Materials Characterization of Electron Beam Melted Ti-6Al-4V

An in-depth material characterization of Electron Beam Melted (EBM) Ti-6Al-4V material has been completed on samples fabricated on an ARCAM A2X EBM machine. The specimens were fabricated under eight separate builds with the material divided into two lots for material testing purposes. Hot Isostatic Pressing (HIP) was utilized to close porosity from fabrication and also served as a material heat treatment to obtain the desired microstructure. The changes in the microstructure and chemistry from the powder to pre-HIP and post-HIP material have been analyzed. Several nondestructive evaluation (NDE) techniques were utilized to characterize the samples both before and after HIP. The test matrix included tensile, high cycle fatigue, low cycle fatigue, fracture toughness, and fatigue crack growth at cryogenic, room, and elevated temperatures. The mechanical properties of the EBM Ti-6Al-4V are compared to conventional Ti-6Al-4V in the annealed condition. Fractography was performed to determine failure initiation site. The EBM Ti-6Al-4V had similar or superior mechanical properties compared to conventionally manufactured Ti-6Al-4V.

Titanium↗
DOE OSTI2024

Electronic Band Structure of a Superconducting Nickelate Probed by the Seebeck Coefficient in the Disordered Limit

Superconducting nickelates are a new family of strongly correlated electron materials with a phase diagram closely resembling that of superconducting cuprates. While analogy with the cuprates is natural, very little is known about the metallic state of the nickelates, making these comparisons difficult. We probe the electronic dispersion of thin-film superconducting five-layer ( n = 5 ) and metallic three-layer ( n = 3 ) nickelates by measuring the Seebeck coefficient S . We find a temperature-independent and negative S / T for both n = 5 and n = 3 nickelates. These results are in stark contrast to the strongly temperature-dependent S / T measured at similar electron filling in the cuprate La 1.36 Nd 0.4 Sr 0.24 CuO 4 . The electronic structure calculated from density-functional theory can reproduce the temperature dependence, sign, and amplitude of S / T in the nickelates using Boltzmann transport theory. This demonstrates that the electronic structure obtained from first-principles calculations provides a reliable description of the fermiology of superconducting nickelates and suggests that, despite indications of strong electronic correlations, there are well-defined quasiparticles in the metallic state. Finally, we explain the differences in the Seebeck coefficient between nickelates and cuprates as originating in strong dissimilarities in impurity concentrations. Our study demonstrates that the high elastic scattering limit of the Seebeck coefficient reflects only the underlying band structure of a metal, analogous to the high magnetic field limit of the Hall coefficient. This opens a new avenue for Seebeck measurements to probe the electronic band structures of relatively disordered quantum materials. Published by the American Physical Society 2024

Grissonnanche, G. (ORCID:0000000251153125)↗
DOE OSTI2024

Direct evidence from high-field magnetotransport for a dramatic change of quasiparticle character in van der Waals ferromagnet Fe 3−𝑥 ⁢GeTe 2

Magnetometry and magnetoresistance (MR) data taken on the van der Waals ferromagnet Fe 3−𝑥 ⁢GeTe 2 (FGT) reveal three distinct contributions to the MR: a linear negative component, a contribution from closed Fermi-surface orbits, and an enhancement proportional to the square of the applied magnetic field which is linked to a noncoplanar spin arrangement. Contrary to earlier studies on FGT, by accounting for the field dependence of the anomalous Hall effect, we find that the ordinary Hall coefficient decreases markedly below 80 K, indicating a significant change in character of the electrons and holes on the Fermi-surface at this temperature. The resulting altered ground state eventually causes the Hall coefficient to reverse sign at 35 K. Our Hall data support the proposal that Kondo-lattice behavior develops in this 𝑑-electron material below 80 K. Additional evidence comes from the negative linear component of the MR, which arises from electron-magnon scattering with an atypical temperature dependence attributable to the onset of Kondo screening.

36 MATERIALS SCIENCE↗
NASA NTRS1985

NBS (National Bureau of Standards): Materials measurements

NBS work for NASA in support of NASA's Microgravity Science and Applications Program under NASA Government Order H-27954B (Properties of Electronic Materials) covering the period April 1, 1984 to March 31, 1985 is described. The work has been carried out in three independent tasks: Task 1--Surface Tensions and Their Variations with Temperature and Impurities; Task 2--Convention during Unidirectional Solidification; Task 3--Measurement of High Temperature Thermodynamic Properties. The results for each task are given separately in the body of the report.

Manning, J. R.↗
NASA NTRS2000

A Radiation Shielding Code for Spacecraft and Its Validation

The HZETRN code, which uses a deterministic approach pioneered at NASA Langley Research Center, has been developed over the past decade to evaluate the local radiation fields within sensitive materials (electronic devices and human tissue) on spacecraft in the space environment. The code describes the interactions of shield materials with the incident galactic cosmic rays, trapped protons, or energetic protons from solar particle events in free space and low Earth orbit. The content of incident radiations is modified by atomic and nuclear reactions with the spacecraft and radiation shield materials. High-energy heavy ions are fragmented into less massive reaction products, and reaction products are produced by direct knockout of shield constituents or from de-excitation products. An overview of the computational procedures and database which describe these interactions is given. Validation of the code with recent Monte Carlo benchmarks, and laboratory and flight measurement is also included.

Shinn, J. L.↗
NASA NTRS1993

Micro-opto-mechanical devices and systems using epitaxial lift off

The integration of high quality, single crystal thin film gallium arsenide (GaAs) and indium phosphide (InP) based photonic and electronic materials and devices with host microstructures fabricated from materials such as silicon (Si), glass, and polymers will enable the fabrication of the next generation of micro-opto-mechanical systems (MOMS) and optoelectronic integrated circuits. Thin film semiconductor devices deposited onto arbitrary host substrates and structures create hybrid (more than one material) near-monolithic integrated systems which can be interconnected electrically using standard inexpensive microfabrication techniques such as vacuum metallization and photolithography. These integrated systems take advantage of the optical and electronic properties of compound semiconductor devices while still using host substrate materials such as silicon, polysilicon, glass and polymers in the microstructures. This type of materials optimization for specific tasks creates higher performance systems than those systems which must use trade-offs in device performance to integrate all of the function in a single material system. The low weight of these thin film devices also makes them attractive for integration with micromechanical devices which may have difficulty supporting and translating the full weight of a standard device. These thin film devices and integrated systems will be attractive for applications, however, only when the development of low cost, high yield fabrication and integration techniques makes their use economically feasible. In this paper, we discuss methods for alignment, selective deposition, and interconnection of thin film epitaxial GaAs and InP based devices onto host substrates and host microstructures.

Camperi-Ginestet, C.↗
DOE OSTI2024

Simple self-consistent method for excited states in density functional theory to characterize defect-derived behavior in wide-band-gap-based microelectronic materials

This final report summarizes the results of the Laboratory Direct Research and Development (LDRD) Project Number 229740. Wide band gap semiconductors such as gallium nitride (GaN) have features highly desirable for multiple mission electronic applications. Realization of their potential requires atomic-scale understanding of electronic behavior. The principal experimental tools for electronically probing defects in GaN are chemically undifferentiating and lack a practical theoretical counterpart needed to identify and characterize specific defects. This project investigated whether a simple idea for modeling defect excited states and their associated photoluminescence (PL) energies is viable, as a path to accelerate the understanding of defect behavior and gain valuable insights into engineering new electronic materials and devices. The research implemented a non-self-consistent total-energy evaluation of a Koopmans-type estimation of an excited electronic state energy in density functional theory (DFT) calculations, and proceeded to design, implement, and assess a self-consistent method for computing excited states based upon an OCcupation-Constrained-DFT (occ-DFT). The occ-DFT was verified in test calculations of defect excited states and validated against well-characterized PL data for 3d transition metal defects in GaN. The method proved stable and robust in computing excited states and gave accurate predictions compared to experimental PL data. The combined ground state/excited-state capability proved capable of chemically differentiating defect species in GaN. In application to 3d dopants in GaN, we reinterpreted extensive experimental literature, proposed new defects as prospective candidates for use in quantum information applications, and outlined design strategies to create and exploit these potentially useful functional defects in GaN.

36 MATERIALS SCIENCE↗
NASA NTRS1985

Excessive production of electron pairs by soft photons in low multiplicity ion interactions

Three multiply charged primary cosmic ray interactions with carbon nuclei are reported, in which the number of materialized electron pairs within a distance of about 0.3 conversion length is larger than predicted from isospin considerations. These are the most energetic (sigma E gamma 4 TeV) of the low multiplicity ( 15 tracks) events observed in the Japanese-American Cooperative Experiment (JACEE-2) emulsion chamber.

Burnett, T. H.↗
DOE OSTI2026

Autonomous fabrication of tailored defect structures in 2D materials using machine learning-enabled scanning transmission electron microscopy

Materials with tailored quantum properties can be engineered from atomic-scale assembly techniques, but existing methods often lack the agility and accuracy to precisely and intelligently control the manufacturing process. Here, we demonstrate a fully autonomous approach for fabricating atomic-level defects using electron beams in scanning transmission electron microscopy (STEM) that combines advanced machine learning and automated beam control. As a proof of concept, we achieved controlled fabrication of MoS-nanowire (MoS-NW) edge structures by iterative and targeted exposure of MoS 2 monolayer to a focused electron beam to selectively eject sulfur atoms, utilizing high-angle annular dark-field (HAADF) imaging for feedback-controlled monitoring of structural evolution of defects. A machine learning framework combining a random forest model and a convolutional neural network (CNN) was developed to decode the HAADF image and accurately identify atomic positions and species. This atomic-level information was then integrated into an autonomous decision-making platform, which applied predefined fabrication strategies to instruct beam control about atomic sites to be ejected. The selected sites were subsequently exposed to a localized electron beam using an FPGA-controlled scan routine with precise control over beam positioning and duration. While the MoS-NW edge structures produced exhibit promising mechanical and electronic properties, the proposed methods to build the autonomous fabrication framework is material-agnostic and can be extended to other 2D materials for the creation of diverse defect structures and heterostructures beyond Mo S2 .

Engineering↗
DOE OSTI2025

A Printed Microscopic Universal Gradient Interface for Super Stretchable Strain‐Insensitive Bioelectronics

Abstract Stretchable electronics capable of conforming to nonplanar and dynamic human body surfaces are central for creating implantable and on‐skin devices for high‐fidelity monitoring of diverse physiological signals. While various strategies have been developed to produce stretchable devices, the signals collected from such devices are often highly sensitive to local strain, resulting in inevitable convolution with surface strain‐induced motion artifacts that are difficult to distinguish from intrinsic physiological signals. Here all‐printed super stretchable strain‐insensitive bioelectronics using a unique universal gradient interface (UGI) are reported to bridge the gap between soft biomaterials and stiff electronic materials. Leveraging a versatile aerosol‐based multi‐materials printing technique that allows precise spatial control over the local stiffnesses with submicron resolution, the UGI enables strain‐insensitive electronic devices with negligible resistivity changes under a 180% uniaxial stretch ratio. Various stretchable devices are directly printed on the UGI for on‐skin health monitoring with high signal quality and near‐perfect immunity to motion artifacts, including semiconductor‐based photodetectors for sensing blood oxygen saturation levels and metal‐based temperature sensors. The concept in this work will significantly simplify the fabrication and accelerate the development of a broad range of wearable and implantable bioelectronics for real‐time health monitoring and personalized therapeutics.

Song, Kaidong [Department of Aerospace and Mechani↗
NASA NTRS2004

Advanced Electrical Materials and Components Being Developed

All aerospace systems require power management and distribution (PMAD) between the energy and power source and the loads. The PMAD subsystem can be broadly described as the conditioning and control of unregulated power from the energy source and its transmission to a power bus for distribution to the intended loads. All power and control circuits for PMAD require electrical components for switching, energy storage, voltage-to-current transformation, filtering, regulation, protection, and isolation. Advanced electrical materials and component development technology is a key technology to increasing the power density, efficiency, reliability, and operating temperature of the PMAD. The primary means to develop advanced electrical components is to develop new and/or significantly improved electronic materials for capacitors, magnetic components, and semiconductor switches and diodes. The next important step is to develop the processing techniques to fabricate electrical and electronic components that exceed the specifications of presently available state-of-the-art components. The NASA Glenn Research Center's advanced electrical materials and component development technology task is focused on the following three areas: 1) New and/or improved dielectric materials for the development of power capacitors with increased capacitance volumetric efficiency, energy density, and operating temperature; 2) New and/or improved high-frequency, high-temperature soft magnetic materials for the development of transformers and inductors with increased power density, energy density, electrical efficiency, and operating temperature; 3) Packaged high-temperature, high-power density, high-voltage, and low-loss SiC diodes and switches.

Schwarze, Gene E.↗
NASA NTRS2005

Evaluation of Power Electronic Components and Systems at Cryogenic Temperatures For Space Missions

Power electronic circuits and systems designed for deep space applications and outer planetary exploration are required to operate reliably and efficiently under extreme temperature conditions. This requirement is dictated by the fact that the operational environments associated with some of the space missions would encompass temperatures as low as -183 C. The development and utilization of electronics capable of low temperature operation would not only fulfill the advanced technology requirements, but also would contribute to improving circuit performance, increasing system efficiency, and reducing development and launch costs. These benefits are generally achieved by the improved intrinsic properties of some of the electronic materials at low temperature, reduced device losses, and the elimination of heating elements used in conventional systems at low temperatures. Power electronic circuits are widely used in space power systems in the areas of power management, conditioning, and control. In this work, the performance of certain power electronic components and systems was investigated under low temperature. These include inductors, capacitors, pulse-width-modulation (PWM) controllers, and advanced commercial DC/DC converter modules. Different properties were determined as a function of temperature in the range of 20 C to -140 C, at various current and voltages levels. The experimental procedures along with the experimental data obtained are presented and discussed in this paper.

Elbuluk, Malik E.↗
DOE OSTI2025

Observation of two cascading screening processes in an iron-based superconductor

Understanding how renormalized quasiparticles emerge in strongly correlated electron materials provides a challenge for both experiment and theory. It has been predicted that distinctive spin and orbital screening mechanisms drive this process in multiorbital materials with strong Coulomb and Hund’s interactions. Here, we provide the experimental evidence of both mechanisms from angle- resolved photoemission spectroscopy on RbFe 2 As 2 . We observe that the emergence of low-energy Fe 3d xy quasiparticles below 90K coincides with spin screening. A second process changes the spectral weight at high energies up to room temperature. Supported by theoretical calculations we attribute it to orbital screening of Fe 3d atomic excitations. These two cascading screening processes drive the temperature evolution from a bad metal to a correlated Fermi liquid.

Condensed-matter physics↗