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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Benefits of Ka-band GaN MMIC High Power Amplifiers With Wide Bandwidth and High Spectral/Power Added Efficiencies for Cognitive Radio Platforms

A cognitive radio on a future NASA near-Earth spacecraft will be capable of sensing its environment and dynamically adapting its operating parameters to provide the desired SATCOM service to the mission. A key component that can enable this type of operation is a high-power amplifier (HPA) that resides on the radio platform. In this paper, we present the RF performance characteristics of a Ka-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) based HPA for cognitive radio platforms. These characteristics include the output power, gain, power added efficiency (PAE), RMS error vector magnitude (EVM), spectral efficiency, 3rd-order intermodulation distortion (IMD) products, spectrum, spectral regrowth, noise figure (NF), and phase noise. The data presented indicates that the HPA meets NTIA, military, and commercial spectral mask requirements. In addition, we discuss the benefits offered by the above performance characteristics toward the design and implementation of a cognitive radio platform. Furthermore, as examples, we discuss three potential use cases that apply artificial intelligence (AI) and machine learning (ML) techniques and exploit the performance characteristics discussed above to provide a knowledge-based cognitive radio platform design for SATCOM. Thus, cognitive radios with performance flexibility can enable roaming and provide seamless interoperability autonomously in the future between NASA, commercial, and other space networks owned by U.S. government agencies.

Gallium nitride↗
NASA NTRS2023

Benefits of Ka-band GaN MMIC High Power Amplifiers With Wide Bandwidth and High Spectral/Power Added Efficiencies for Cognitive Radio Platforms

A cognitive radio on a future NASA near-Earth spacecraft will be capable of sensing its environment and dynamically adapting its operating parameters to provide the desired SATCOM service to the mission. A key component that can enable this type of operation is a high-power amplifier (HPA) that resides on the radio platform. In this report, we present the RF performance characteristics of a Ka-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) based HPA for cognitive radio platforms. These characteristics include the output power, gain, power added efficiency (PAE), RMS error vector magnitude (EVM), spectral efficiency, 3rdorder intermodulation distortion (IMD) products, spectrum, spectral regrowth, noise figure (NF), phase noise, and group delay. The data presented indicates that the HPA meets NTIA, military, and commercial spectral mask requirements. In addition, we discuss the benefits offered by the above performance characteristics toward the design and implementation of a cognitive radio platform. Furthermore, as examples, we discuss three potential use cases that apply artificial intelligence (AI) and machine learning (ML) techniques and exploit the performance characteristics discussed above to provide a knowledge-based cognitive radio platform design for SATCOM. Thus, cognitive radios with performance flexibility can enable roaming and provide seamless interoperability autonomously in the future between NASA, commercial, and other space networks owned by U.S. government agencies.

Gallium nitride↗
NASA NTRSDate not supplied

Ka-Band GaN-on-SiC MMIC Balanced High Power Amplifier for NASA's Lunar Missions

The feasibility of Ka-band GaN-on-SiC MMIC based balanced high power amplifier (HPA) for science data downlinks from NASA’s Lunar mission assets in space is investigated. The HPA combines the RF output power from two PAs using a rectangular waveguide based 3-dB hybrid coupler. The investigation includes characterizing the HPA for the overall RF output power, Gain, PAE, RMS EVM for offset-QPSK, 8PSK, 16APSK, and 32APSK waveforms, Spectrum, 3rd order IMD products, noise figure, phase noise, & group delay. The HPA has high Pout and good linearity and can support high data rate downlinks from the surface and vicinity of the Moon to Earth.

Rainee.N. Simons↗
NASA NTRSDate not supplied

Demonstration of GaN HEMT MMIC High-Power Amplifier for Lunar Proximity Communications

In this paper, we demonstrate a Ka-band high power, high efficiency, GaN HEMT MMIC based power amplifier for communications from the lunar orbit to lunar surface. The measured results include Pout, Gain, PAE, RMS EVM for Offset-QPSK, 8PSK, 16APSK, and 32APSK waveforms, 3rd-order IMD products, noise figure, and phase noise.

Ka-band↗
NASA NTRS2024

Demonstration of GaN HEMT MMIC High-Power Amplifier for Lunar Proximity Communications

In this paper, we demonstrate a high efficiency, Ka-band (23.15 to 23.55 GHz) GaN HEMT MMIC based single-ended high power amplifier (HPA). The measured Pout, Gain, PAE, RMS EVM for Offset-QPSK, 8PSK, 16APSK, and 32APSK waveforms, 3rd-order IMD products, noise figure, and phase noise are presented. The results indicate that the saturated output power (P sat ) and the small signal Gain are on the order of 38.8 dBm (7.6 W) and 29.3 dB, respectively. The PAE at Psat is 20.0%. At the 1-dB compression point, the RMS EVM and the out-of-band spectral regrowth are less than 6% and –26 dBc respectively, for all four waveforms. Additionally, the spectrum is in compliance with the NTIA mask requirements for all four waveforms. The output 3rd-order intercept point (OIP3) is on the order of 42 dBm. The noise figure is less than 9.5 dB. The SSB phase noise spectral density is compliant with the envelope defined by the MIL-STD-188-164C. The HPA can enable proximity forward links between the orbiting Gateway/relay satellites and the lunar surface elements and cross links between relay satellites.

Ka-band↗
NASA NTRSDate not supplied

Amplifier Output Power, Gain, Efficiency, and Bandwidth: A Comparative Study of GaN HEMT MMIC Multi-Stage Power Amplifiers versus Distributed Power Amplifiers

In this paper we present first, the results of a study conducted to investigate the microwave performance of a wideband (25-31 GHz) GaN MMIC distributed high power amplifier (HPA). Second, we compare and contrast the above performance with that of an alternate architecture that relies on two HPAs to provide contiguous 25-31 GHz coverage. The two HPAs operate across 25-28 GHz and 27-31 GHz, respectively, and can be switched in and out depending on the need at any given time. The parameters investigated includes the output power, gain, power added efficiency, bandwidth, RMS error vector magnitude for offset-QPSK, 8PSK, 16APSK, and 32 APSK waveforms, 3rd-order intermodulation distortion products, noise figure, and single sideband phase noise.

MMIC↗
NASA NTRS2024

Spectrally Efficient GaN High-Power Amplifier for Lunar Communications

The paper demonstrates a spectrally efficient Ka-band GaN MMIC based high-power amplifier (HPA) that uses a waveguide 4-port magic-tee as a 2-way power combiner to combine the output from two lower power amplifier circuits. The paper presents for the prototype HPA the measured output power, gain, power added efficiency, error vector magnitude for Offset-QPSK, 8PSK, 16APSK, 32APSK, and 16QAM waveforms, waveform spectrum, and out-of-band spectral regrowth. The HPA is intended for establishing a direct communication link between assets on the lunar surface/orbit and Earth.

Gallium nitride↗
NASA NTRSDate not supplied

Improving Sim-to-Real Transfer in Vision-Based Robot Navigation Via Instance-Level GAN-Based Data Augmentation

Achieving robust vision-based robotic tasks requires large amounts of data, which are often difficult to obtain in real-world scenarios. Simulators and synthetic data offer a cost-effective alternative, but the visual gap between simulation and reality hinders the performance of models when deployed in real-world environments. In this paper, we present a data augmentation pipeline that integrates a foundation model (Segment Anything Model) with an unsupervised image-to-image translation model (CycleGAN) for instance-level domain transfer from simulation to reality. This pipeline enables the generation of realistic labeled data from synthetic images for training supervised machine learning models in vision-based navigation tasks. We evaluate our approach on real-world data for ego-vehicle pose estimation, a critical autonomous navigation task involving the prediction of cross-track position and heading angle relative to road center line markings. The results of our tests show that our GAN-based data augmentation pipeline significantly outperforms models trained solely on simulation data or on data processed with standard image augmentation methods for sim-to-real transfer, enhancing model robustness and generalizability in real-world scenarios. Our method provides a scalable and flexible data augmentation tool for leveraging large synthetic datasets to enhance vision-based robotic navigation tasks.

artificial intelligence↗
DOE OSTI2025

Packaging a 650V/400A GaN Half-bridge Power Module with Ultra-low Parasitics for Electric Vehicle Drive Applications

This paper proposes a compact and efficient half-bridge power module with three 650 V / 150 A GaN dies in parallel. The power module incorporates a main power printed circuit board (PCB), an interface PCB, and a flex PCB to achieve low parasitics in both power loop and gate-side connection, resolving the issue of high parasitics typically encountered with wire bonding in high-current applications. Additionally, the interface PCB decouples the design constraints between the power loop and the gate loops. The proposed design is optimized with a vertical loop configuration to reduce power loop inductance through magnetic flux cancellation. Finite element analysis indicates that the power loop inductance is 0.58 nH at 100 MHz, while the maximum die junction temperature reaches 131 °C under an ambient temperature of 65 °C and a load current of 385 A. The proposed multi-piece PCB structure reduces the inductance of the drive circuit to minimize EMI and to mitigate false triggering. At the same time, it reduces impedance mismatches across different driver circuits, thereby achieving dynamic current sharing in multi-chip parallel configurations. Under simulation conditions of 400 V / 385 A, the current imbalance among chips was limited to 5 A. A 400 V / 385 A double-pulse test was conducted to experimentally validate the performance of the proposed power module.

30 DIRECT ENERGY CONVERSION↗
NASA NTRS1996

A Microstructural Analysis of Orientation Variation in Epitaxial AlN on Si, Its Probable Origin, and Effect on Subsequent GaN Growth

A structural examination of aluminum nitride growth on [111] silicon was carried out using transmission electron microscopy. Electron diffraction indicates that the basal planes of the wurtzitic overlayer mimic the orientation of the close-packed planes of the substrate. However, considerable, random rotation in the basal plane and random out-of-plane tilts were evident. This article examines these issues with a structural examination of AlN and GaN/AlN on silicon and compares the findings to those reported in the literature.

GaN AlN Si epitaxial aluminum gallium nitride↗
NASA NTRS2013

Design of an Ultra-High Efficiency GaN High-Power Amplifier for SAR Remote Sensing

This work describes the development of a high-power amplifier for use with a remote sensing SAR system. The amplifier is intended to meet the requirements for the Sweep-SAR technique for use in the proposed DESDynI SAR instrument. In order to optimize the amplifier design, active load-pull technique is employed to provide harmonic tuning to provide efficiency improvements. In addition, some of the techniques to overcome the challenges of load-pulling high power devices are presented. The design amplifier was measured to have 49 dBm of output power with 75% PAE, which is suitable to meet the proposed system requirements.

active load-pull↗
DOE OSTI2024

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects.

Electroluminescence↗