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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer....

AlGaN/GaN↗
NASA NTRS2011

Radiation Characterization of Commercial GaN Devices

Radiative feedback from primordial protostars and final mass of the first star Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. Based on previous materials and prototype device studies, it is expected that these commercial devices will be quite tolerant to the types of radiation encountered in space. This expectation needs to be verified and the study described herein was undertaken for that purpose. All of the parts discussed in this report are readily available commercially. The parts chosen for study are all targeted for RF applications. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by irradiating with 50 MeV protons, 2) a detailed DDD/TID study of one particular part type was performed by irradiating with 50 MeV protons, and 3) a SEB/SEGR test was performed on a variety of part types by irradiating with heavy ions. No significant degradation was observed in the tests performed in this study.

HEMT↗
NASA NTRS2018

A Novel Reconfigurable GaN Based Fully Solid-State Microwave Power Module for Communications/Radar Applications

The paper presents the design, integration, and performance of a novel S-/X-band, GaN based, fully solid-state microwave power module (SSMPM). The SSMPM includes diplexers, pre-amplifiers, a multi-stage medium power amplifier, SPDT switches, and CW/Pulsed high-power amplifiers. These components are synergistically integrated such that a single SSMPM is capable of being dynamically reconfigured to function as a S-/X-band amplifier for TT&C/telecommunications for command/science date downlink and radar for remote sensing onboard a planetary exploration spacecraft. The SSMPM is capable of delivering Psat of 39.5 dBm (~10 W CW) at S-band, Psat of 46.7 dBm (~45 W CW) at X-band, and Psat of 51.2 dBm (~122 W Pulsed) at X-band.

Microwave Amplifier↗
NASA NTRS2019

A Novel Reconfigurable GaN Based Fully Solid-State Microwave Power Module for Communications/Radar Applications

In this paper, we present as a proof-of-concept (POC) the design, integration, and performance of a novel reconfigurable GaN based fully solid-state MPM. The module synergistically integrates diplexers, pre-amplifiers, multistage medium power amplifiers (MPAs), SPDT switches, and CW/Pulsed high power amplifiers (HPAs) with a voltage sequencer, a DC blanking controller, and a low voltage electronic power conditioner. The POC SSMPM operates at both S-band and X-band to serve multiple roles. The SSMPM can be reconfigured to deliver Psat of 39 dBm (8 W CW) at S-band, Psat of 46 dBm (40 W CW) at X-band, and Psat of >50 dBm (>100 W Pulsed) at X-band. Lastly, our link budget calculations indicate that the SSMPM with Psat = 40 W when coupled to a 10 cm X-band transmit antenna on a low Earth orbiting (900 km) satellite can close a 1 Gbps (QPSK) data downlink to a 1 m receive antenna on ground with 3 dB margin.

Simons, Rainee N.↗
NASA NTRS2019

A Novel Reconfigurable GaN Based Fully Solid-State Microwave Power Module for Communications/Radar Applications

The paper presents as a proof-of-concept (POC) the design, integration, and performance of a novel reconfigurableS-/X-band, GaN based, fully solid-state microwave power module (SSMPM) to enable miniaturization of the overall RFsystem. The SSMPM includes diplexers, pre-amplifiers, a multistage medium power amplifier, SPDT switches, andCW/Pulsed high-power amplifiers. These components are synergistically integrated such that a single SSMPM is capable of being dynamically reconfigured to function as a CW S-/X-band amplifier for TT&C/science data downlink and as a pulsed X-band amplifier for remote sensing radar onboard a planetary exploration spacecraft. The POC SSMPM is capable of delivering Psat of 39 dBm (8 W CW) at S-band, P(sub sat) of 46 dBm (40 W CW) at X-band, and P(sub sat) of >50 dBm (>100 W Pulsed) at X-band.

Simons, Rainee N.↗
NASA NTRS2018

A W-Band Spatial Power-Combining Amplifier using GaN MMICs

In this paper, we describe a miniature powercombiner for monolithic millimetre-wave integrated circuit (MMIC) chips using spatial power-combining with cavity modes. We have designed GaN MMIC power amplifier chips for 94 GHz, and illustrate the concept of the W-Band Spatial Power Combining Amplifier (WSPCA). Using 1 Watt, 94 GHz MMIC chips in a two-way cavity mode combiner, we were able to achieve 2 Watts of output power with 9 dB gain and 15 % PAE. This technique could be extended to high power MMICs and larger numbers of chips to achieve higher output power in a compact size. The applications include earth science radar, but may be extended to other applications requiring wider bandwidth.

Gawande, Rohit↗
NASA NTRSDate not supplied

Ka-Band GaN-on-SiC MMIC Balanced High Power Amplifier for NASA's Lunar Missions

The feasibility of Ka-band GaN-on-SiC MMIC based balanced power amplifier for science data downlinks from NASA’s lunar mission assets in space is investigated. The balanced amplifier combines the RF output power from two power amplifiers using a rectangular waveguide based 3-dB hybrid coupler. The investigation includes characterizing the balanced amplifier for the overall RF output power, Gain, power added efficiency, RMS error vector magnitude for offset-QPSK, 8PSK, 16APSK, and 32APSK waveforms, 3rd order intermodulation products, and noise figure. The balanced amplifier has high output RF power and good linearity and can support high data rate downlinks from the surface and vicinity of the Moon to Earth.

Gallium Nitride↗
NASA NTRSDate not supplied

Benefits of Ka-band GaN MMIC High Power Amplifiers With Wide Bandwidth and High Spectral/Power Added Efficiencies for Cognitive Radio Platforms

A cognitive radio on a future NASA near-Earth spacecraft will be capable of sensing its environment and dynamically adapting its operating parameters to provide the desired SATCOM service to the mission. A key component that can enable this type of operation is a high-power amplifier (HPA) that resides on the radio platform. In this paper, we present the RF performance characteristics of a Ka-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) based HPA for cognitive radio platforms. These characteristics include the output power, gain, power added efficiency (PAE), RMS error vector magnitude (EVM), spectral efficiency, 3rd-order intermodulation distortion (IMD) products, spectrum, spectral regrowth, noise figure (NF), and phase noise. The data presented indicates that the HPA meets NTIA, military, and commercial spectral mask requirements. In addition, we discuss the benefits offered by the above performance characteristics toward the design and implementation of a cognitive radio platform. Furthermore, as examples, we discuss three potential use cases that apply artificial intelligence (AI) and machine learning (ML) techniques and exploit the performance characteristics discussed above to provide a knowledge-based cognitive radio platform design for SATCOM. Thus, cognitive radios with performance flexibility can enable roaming and provide seamless interoperability autonomously in the future between NASA, commercial, and other space networks owned by U.S. government agencies.

Gallium nitride↗
NASA NTRS2023

Benefits of Ka-band GaN MMIC High Power Amplifiers With Wide Bandwidth and High Spectral/Power Added Efficiencies for Cognitive Radio Platforms

A cognitive radio on a future NASA near-Earth spacecraft will be capable of sensing its environment and dynamically adapting its operating parameters to provide the desired SATCOM service to the mission. A key component that can enable this type of operation is a high-power amplifier (HPA) that resides on the radio platform. In this report, we present the RF performance characteristics of a Ka-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) based HPA for cognitive radio platforms. These characteristics include the output power, gain, power added efficiency (PAE), RMS error vector magnitude (EVM), spectral efficiency, 3rdorder intermodulation distortion (IMD) products, spectrum, spectral regrowth, noise figure (NF), phase noise, and group delay. The data presented indicates that the HPA meets NTIA, military, and commercial spectral mask requirements. In addition, we discuss the benefits offered by the above performance characteristics toward the design and implementation of a cognitive radio platform. Furthermore, as examples, we discuss three potential use cases that apply artificial intelligence (AI) and machine learning (ML) techniques and exploit the performance characteristics discussed above to provide a knowledge-based cognitive radio platform design for SATCOM. Thus, cognitive radios with performance flexibility can enable roaming and provide seamless interoperability autonomously in the future between NASA, commercial, and other space networks owned by U.S. government agencies.

Gallium nitride↗
NASA NTRSDate not supplied

Ka-Band GaN-on-SiC MMIC Balanced High Power Amplifier for NASA's Lunar Missions

The feasibility of Ka-band GaN-on-SiC MMIC based balanced high power amplifier (HPA) for science data downlinks from NASA’s Lunar mission assets in space is investigated. The HPA combines the RF output power from two PAs using a rectangular waveguide based 3-dB hybrid coupler. The investigation includes characterizing the HPA for the overall RF output power, Gain, PAE, RMS EVM for offset-QPSK, 8PSK, 16APSK, and 32APSK waveforms, Spectrum, 3rd order IMD products, noise figure, phase noise, & group delay. The HPA has high Pout and good linearity and can support high data rate downlinks from the surface and vicinity of the Moon to Earth.

Rainee.N. Simons↗
NASA NTRSDate not supplied

Demonstration of GaN HEMT MMIC High-Power Amplifier for Lunar Proximity Communications

In this paper, we demonstrate a Ka-band high power, high efficiency, GaN HEMT MMIC based power amplifier for communications from the lunar orbit to lunar surface. The measured results include Pout, Gain, PAE, RMS EVM for Offset-QPSK, 8PSK, 16APSK, and 32APSK waveforms, 3rd-order IMD products, noise figure, and phase noise.

Ka-band↗
NASA NTRS2024

Demonstration of GaN HEMT MMIC High-Power Amplifier for Lunar Proximity Communications

In this paper, we demonstrate a high efficiency, Ka-band (23.15 to 23.55 GHz) GaN HEMT MMIC based single-ended high power amplifier (HPA). The measured Pout, Gain, PAE, RMS EVM for Offset-QPSK, 8PSK, 16APSK, and 32APSK waveforms, 3rd-order IMD products, noise figure, and phase noise are presented. The results indicate that the saturated output power (P sat ) and the small signal Gain are on the order of 38.8 dBm (7.6 W) and 29.3 dB, respectively. The PAE at Psat is 20.0%. At the 1-dB compression point, the RMS EVM and the out-of-band spectral regrowth are less than 6% and –26 dBc respectively, for all four waveforms. Additionally, the spectrum is in compliance with the NTIA mask requirements for all four waveforms. The output 3rd-order intercept point (OIP3) is on the order of 42 dBm. The noise figure is less than 9.5 dB. The SSB phase noise spectral density is compliant with the envelope defined by the MIL-STD-188-164C. The HPA can enable proximity forward links between the orbiting Gateway/relay satellites and the lunar surface elements and cross links between relay satellites.

Ka-band↗
NASA NTRSDate not supplied

Amplifier Output Power, Gain, Efficiency, and Bandwidth: A Comparative Study of GaN HEMT MMIC Multi-Stage Power Amplifiers versus Distributed Power Amplifiers

In this paper we present first, the results of a study conducted to investigate the microwave performance of a wideband (25-31 GHz) GaN MMIC distributed high power amplifier (HPA). Second, we compare and contrast the above performance with that of an alternate architecture that relies on two HPAs to provide contiguous 25-31 GHz coverage. The two HPAs operate across 25-28 GHz and 27-31 GHz, respectively, and can be switched in and out depending on the need at any given time. The parameters investigated includes the output power, gain, power added efficiency, bandwidth, RMS error vector magnitude for offset-QPSK, 8PSK, 16APSK, and 32 APSK waveforms, 3rd-order intermodulation distortion products, noise figure, and single sideband phase noise.

MMIC↗
NASA NTRS2024

Spectrally Efficient GaN High-Power Amplifier for Lunar Communications

The paper demonstrates a spectrally efficient Ka-band GaN MMIC based high-power amplifier (HPA) that uses a waveguide 4-port magic-tee as a 2-way power combiner to combine the output from two lower power amplifier circuits. The paper presents for the prototype HPA the measured output power, gain, power added efficiency, error vector magnitude for Offset-QPSK, 8PSK, 16APSK, 32APSK, and 16QAM waveforms, waveform spectrum, and out-of-band spectral regrowth. The HPA is intended for establishing a direct communication link between assets on the lunar surface/orbit and Earth.

Gallium nitride↗
NASA NTRSDate not supplied

Improving Sim-to-Real Transfer in Vision-Based Robot Navigation Via Instance-Level GAN-Based Data Augmentation

Achieving robust vision-based robotic tasks requires large amounts of data, which are often difficult to obtain in real-world scenarios. Simulators and synthetic data offer a cost-effective alternative, but the visual gap between simulation and reality hinders the performance of models when deployed in real-world environments. In this paper, we present a data augmentation pipeline that integrates a foundation model (Segment Anything Model) with an unsupervised image-to-image translation model (CycleGAN) for instance-level domain transfer from simulation to reality. This pipeline enables the generation of realistic labeled data from synthetic images for training supervised machine learning models in vision-based navigation tasks. We evaluate our approach on real-world data for ego-vehicle pose estimation, a critical autonomous navigation task involving the prediction of cross-track position and heading angle relative to road center line markings. The results of our tests show that our GAN-based data augmentation pipeline significantly outperforms models trained solely on simulation data or on data processed with standard image augmentation methods for sim-to-real transfer, enhancing model robustness and generalizability in real-world scenarios. Our method provides a scalable and flexible data augmentation tool for leveraging large synthetic datasets to enhance vision-based robotic navigation tasks.

artificial intelligence↗
DOE OSTI2025

Packaging a 650V/400A GaN Half-bridge Power Module with Ultra-low Parasitics for Electric Vehicle Drive Applications

This paper proposes a compact and efficient half-bridge power module with three 650 V / 150 A GaN dies in parallel. The power module incorporates a main power printed circuit board (PCB), an interface PCB, and a flex PCB to achieve low parasitics in both power loop and gate-side connection, resolving the issue of high parasitics typically encountered with wire bonding in high-current applications. Additionally, the interface PCB decouples the design constraints between the power loop and the gate loops. The proposed design is optimized with a vertical loop configuration to reduce power loop inductance through magnetic flux cancellation. Finite element analysis indicates that the power loop inductance is 0.58 nH at 100 MHz, while the maximum die junction temperature reaches 131 °C under an ambient temperature of 65 °C and a load current of 385 A. The proposed multi-piece PCB structure reduces the inductance of the drive circuit to minimize EMI and to mitigate false triggering. At the same time, it reduces impedance mismatches across different driver circuits, thereby achieving dynamic current sharing in multi-chip parallel configurations. Under simulation conditions of 400 V / 385 A, the current imbalance among chips was limited to 5 A. A 400 V / 385 A double-pulse test was conducted to experimentally validate the performance of the proposed power module.

30 DIRECT ENERGY CONVERSION↗