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At least 109 records · Page 6

Superconducting Al-trilayer tunnel junctions for use as X-ray detectors

Photolithographic techniques have been developed to fabricate high-quality Al-Al oxide-Al superconducting tunnel junctions for use in X-ray detectors. These devices are designed to incorporate about 1-micron-thick superconducting X-ray absorbers for the detection of less than 10-keV single photons. In an effort to increase energy resolution, superconductor bandgap engineering with lateral and vertical trapping has been used to shorten quasi-particle tunneling times and diffusion lengths and to prevent quasi-particle diffusion away from the tunnel junction. Methods that have been developed for overcoming materials imcompatibility and device degradation upon thermal cycling are reported. The authors also report on the use of a nonrectangular tunnel junction geometry which reduces the magnetic field needed to suppress the Josephson current for stable biasing. Work in progress to measure the energy resolution of these X-ray detectors at 0.35 K is also discussed.

Gaidis, M. C.↗

Tuning the inductance of Josephson junction arrays without SQUIDs

It is customary to use arrays of superconducting quantum interference devices (SQUIDs) for implementing magnetic field-tunable inductors. Here, we demonstrate an equivalent tunability in a (SQUID-free) array of single Al/AlOx/Al Josephson tunnel junctions. With the proper choice of junction geometry, a perpendicularly applied magnetic field bends along the plane of the superconductor and focuses into the tunnel barrier region due to a demagnetization effect. Consequently, the Josephson inductance can be efficiently modulated by the Fraunhofer-type supercurrent interference. The elimination of SQUIDs not only simplifies the device design and fabrication but also facilitates a denser packing of junctions, and, hence, a higher inductance per unit length. As an example, we demonstrate a transmission line, the characteristic impedance of which is field-tuned in the range of 4–8 kΩ, centered around the important value of the resistance quantum h/(2e)2≈6.5 kΩ.

Physics↗

Giant Anisotropic Magnetoresistance in Few-Layer α-RuCl 3 Tunnel Junctions

The spin–orbit-assisted Mott insulator α-RuCl 3 is proximate to the coveted quantum spin liquid (QSL) predicted by the Kitaev model. In the search for the pure Kitaev QSL, reducing the dimensionality of this frustrated magnet by exfoliation has been proposed as a way to enhance magnetic fluctuations and Kitaev interactions. Here, in this work, we perform angle-dependent tunneling magnetoresistance (TMR) measurements on ultrathin α-RuCl 3 crystals with various layer numbers to probe their magnetic, electronic, and crystal structures. We observe a giant change in resistance, as large as ~2500%, when the magnetic field rotates either within or out of the α-RuCl 3 plane, a manifestation of the strongly anisotropic spin interactions in this material. In combination with scanning transmission electron microscopy, this tunneling anisotropic magnetoresistance (TAMR) reveals that few-layer α-RuCl 3 crystals remain in the high-temperature monoclinic phase at low temperatures. It also shows the presence of a zigzag antiferromagnetic order below the critical temperature T N ≃ 14 K, which is twice the one typically observed in bulk samples with rhombohedral stacking. Our work offers valuable insights into the relation between the stacking order and magnetic properties of this material, which helps lay the groundwork for creating and electrically probing exotic magnetic phases such as QSLs via van der Waals engineering.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Nonvolatile Memristive Effect in Few-Layer CrI 3 Driven by Electrostatic Gating

The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI 3 -based tunnel junctions. The few-layer CrI 3 -based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI 3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI 3 . We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI 3 via gating-induced Jahn–Teller distortion. Furthermore, our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.

2D magnet↗

Characterization of NbN films and tunnel junctions

Properties of NbN films and NbN/MgO/NbN tunnel junctions are discussed. NbN junctions are being developed for use in high-frequency, SIS quasiparticle mixers. To properly design mixer circuits, junction and film properties need to be characterized. The specific capacitance of NbN/MgO/NbN junctions has been measured as a function of the product of the normal-state resistance and the junction area (RnA), and it is found to vary by more than a factor of two (35-85 fF/sq microns) over the range of RnA measured (1000-50 ohm sq microns). This variation is important because the specific capacitance determines the RC speed of the tunnel junction at a given RnA value. The magnetic penetration depth of NbN films deposited under different conditions is also measured. The magnetic penetration depth affects the design of microstrip line used in RF tuning circuits. Control of the magnetic penetration depth is necessary to fabricate reproducible tuning circuits. Additionally, the critical current uniformity for arrays of 100 junctions has been measured. Junction uniformity will affect the design of focal-plane arrays of SIS mixers. Finally, the relevance of these measurements to the design of Josephson electronics is discussed.

Stern, J. A.↗

Tunneling Spectroscopy of Quantum Spin Liquids

Here, we examine the spectroscopic signatures of tunneling through a Kitaev quantum spin liquid (QSL) barrier in a number of experimentally relevant geometries. We combine contributions from elastic and inelastic tunneling processes and find that spin-flip scattering at the itinerant spinon modes gives rise to a gapped contribution to the tunneling conductance spectrum. We address the spectral modifications that arise in a magnetic field, which is applied to drive the candidate material α-RuCl 3 into a QSL phase, and we propose a lateral 1D tunnel junction as a viable setup in this regime. The characteristic spin gap is an unambiguous signature of the fractionalized QSL excitations, distinguishing it from magnons or phonons. We discuss the generalization of our results to a wide variety of QSLs with gapped and gapless spin correlators.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.

36 MATERIALS SCIENCE↗

Collaborative research in tunneling and field emission pumped surface wave local oscillators and amplifiers for infrared and submillimeter wavelengths under director's discretionary fund

Progress is reported in work towards the development of surface wave sources for the infrared and sub-millimeter portion of the spectrum to be based upon electron pumping by tunneling electrons in metal-barrier-metal or metal-barrier-semiconductor devices. Tunneling phenomena and the coupling of radiation to tunnel junctions were studied. The propagation characteristics of surface electro-magnetic modes in metal-insulator-p(++) semiconductor structures as a function of frequency were calculated. A model for the gain process based upon Tucker's formalism was developed and used to estimate what low frequency gain might be expected from such structures. The question of gain was addressed from a more fundamental viewpoint using the method of Lasher and Stern.

Gustafson, T. K.↗

Photovoltaic effect on silicon–alumina–ferromagnet tunnel junction providing insights about spin-dependent molecular spintronics solar cells

The study focuses on the observation of the photovoltaic (PV) effect on Si/AlOx/FM semiconductor–insulator–ferromagnetic metal (SIFM) structure. Utilization of ~10 nm NiFe film as the top ferromagnet (FM) layer was permeable for sufficient light radiation necessary for reaching the silicon substrate for the generation of electron–hole pairs upon photoexcitation. The effect of light intensity and magnetic field was studied on the SIFM’s PV response. We also investigated the role of silicon doping and the AlOx tunnel barrier between Si and FM in exploring suitable band bending necessary for separating the electron–hole pairs. Increasing the dopant density in Si and a damaged AlOx tunnel barrier quenched the PV effect. Ferromagnet/Insulator/Ferromagnet (FMIFM) was also studied to gain deeper mechanistic insights into the spin-dependent photovoltaic effect observed on FM/AlOx/FM tunnel junction-based molecular spintronics devices. Bridging of magnetic molecules between the Si and FM electrodes of SIFM increased the overall device current by establishing additional parallel conduction channels along with the AlOx tunnel barrier. However, SIFM with molecular conduction channels did not produce a PV effect. This study reported the PV effect on well-designed SIFM and opened possibilities for exploring new systems. More importantly, this paper provided insights into the role of molecule-induced exchange coupling in transforming an ordinary, cheap, and widely available ferromagnet into a semiconductor-like material capable of showing PV.

14 SOLAR ENERGY↗

Dynamic, Adaptive, Systems and Materials: Complex, Simple and Emergent Behaviors

This program has been funded by DoE/BES for twenty years. It has moved into and out of various subjects as it has developed, but it has retained its focus on complexity and complex systems. The project has evolved in the following way: Self-Assembly and Biomimetic Self-Assembly: All self-assembling systems depend upon a minimum of two types of interaction: a repulsion and an attraction. For the familiar molecular systems, attractive interactions are typically hydrogen bonds and electrostatic interactions. Repulsive interactions include steric effects, hydrophobic effects (in biological systems), and charge-charge repulsion. We have expanded this repertoire to include surface interactions, magnetic interactions, and others. I list these systems in the order in which we have explored them: i) A key emphasis in current work is in understanding how the movement of ions in a magnetic field (the Lorentz effect) interacts with catalytic systems. We have demonstrated that an acceleration in rate of reduction of CO 2 to CO can be accomplished by applying an external magnetic field. This acceleration is largely due to the application of the Lorentz effect on mass transport at the catalyst’s surface. ii) We have also extensively explored the influence of electrostatics, as exhibited in self-assembling systems, by tribocharging. iii) Another key system involves surface tension effects; examples include interactions between heavy particles floating at a liquid-air interface, and interacting by changes in surface area; interactions of bubbles and bubble rafts, behaviors of bubble trains in microfluidic networks, and behaviors of microorganisms in constraining environments. iv) This work has intentionally de-emphasized biological systems; but it does include some work on protein-ligand interactions and interactions among microorganisms. v) We have also explored applications of some of these effects, these explorations include bubble rafts as diffraction gratings, exploration of the structures that can be obtained by tribocharging and uses of these structures in exploring nucleation and melting of crystals. vi) Although not a major focus of this work, several other topics have emerged and offer opportunities for future work. These include the behavior of bubble trains and bubble rafts in microfluidic systems. A particularly interesting example is the formation of bubble trains that repeat in the alteration of large and small bubbles according to rules we do not presently understand, but are uniquely large-period oscillating systems. These systems offer a new route into understanding the instabilities of the type represented by oscillations. vii) We have also begun exploratory projects on magnetic levitation (especially to determine molecular density), and information storage (in molecules). Magnetic Levitation: Self-assembling and biomimetic systems require both attraction and repulsion. We have used electrostatics (tribocharging), interfacial free-energies (surface tension and related forces) and others. Potential uses include reconfigurable diffraction gratings and liquid lenses; exploration of mechanisms in tribocharging; tunneling in EGaIn junctions; and bubble trains (especially in micro-fluidic systems). Examples of systems representing these topics is included in the following papers: Complexity: Disks rotating at a water-air interface; Benard-Marangoni effects; Vortex-Crystals from spinning magnetic disks (Marangoni effects); EGaIn Electrode to study quantum tunneling; Self-Assembly of electrostatically-charged metallic spheres (electrets); Dynamically reconfigurable lens; Using computational designs of ligands for enzymes; Electrostatic self-assembly by tribocharging; Monodisperse bubble trains in microchannel systems; Inverted dripping faucet; Flames; Printing of micro-organisms to regenerate the “ink” of printing device; Using micro-organisms to move loads (“microoxen”); Motion of bacterial swarms near surfaces; Making monodisperse particles in microfluidic systems; Coding/decoding of information stored in droplet trains in microfluidic networks; Magnetic levitation; and Information storage. i) Tribocharging. The change in focus of this work on electrets from the fundamentals of charging to applications of these materials in studying self-assembly using electrostatic interactions. ii) Bubbles in Microchannels. The realization that systems of bubbles in microchannels represented a major opportunity to study complexity in a very tractable system, and the development of a semi-quantitative theory of this subject. iii) Flames. The growth of “flames” remains an exploratory subject for the research, although their currently relatively little active work involving it ongoing. iv) Systems with Microorganisms. The removal of work in biological systems from this project. Based on work supported in this program, we now have a significant project on the development of microfluidic tools for studying C. elegans (a nematode), but this work was not appropriate for a program focused on complexity, and we developed separate support for it. (It is, however, an example of successful seeding of a new area by BES.) The work on electrets has gone through a period in which a part of the program was the subject of a MURI; the focus of this work was to develop materials that did not charge electrostatically on friction or contact. The MURI is now over, and the work on dynamic self-assembly (supported by BES) is the major focus. “Flames” has also enjoyed synergistic support, in terms of a project supported by DARPA on flame suppression (in the absence of extinguishing agents, using acoustic and electrostatic interactions). This work was helpful in understanding some of the basics of flames, but is entirely distinct from the BES focus in complexity. A growing interest is in the Lorentz effect. The Lorentz effect is the force exerted on charged particles (electrons, ions, charged molecules) when they move through a perpendicular magnetic field. The Lorentz effect is almost ubiquitous in modern technology: examples of applications include electric motors, dynamos, cathode ray tubes, many batteries, and most systems that control electrical currents with magnetic forces. We have begun to explore the Lorentz effect in electrochemical systems and heterogeneous catalytic systems involving charged organic species and inorganic ions. This work is still at an early stage, but initial studies that Lorentz effects can be large when ions move through magnetic fields, or magnetic fields move in the presence of ions.

36 MATERIALS SCIENCE↗

Effect of an applied magnetic field on the performance of a SIS receiver near 300 GHz

A superconductor-insulator-superconductor (SIS) receiver has been successfully constructed and tested for operation at 265 - 280 GHz using 1 micron/sq area Nb-AlO(x)-Nb tunnel junctions fabricated at Stony Brook. The best performance to date is a double sideband (DSB) receiver noise temperature of 129 K at 278 GHz. It is found that suppression of the Josephson pair currents with a magnetic field is essential for good performance and a stable dc bias point. Fields as high as 280 gauss have been used with no degradation of mixing performance. The improvement in the intermediate frequency output stability with progressively increasing magnetic fields is illustrated.

Mallison, W. H.↗

Pseudotunnel Magnetoresistance in Twisted van der Waals Fe 3 GeTe 2 Homojunctions

Abstract Twistronics, a novel engineering approach involving the alignment of van der Waals (vdW) integrated two‐dimensional materials at specific angles, has recently attracted significant attention. Novel nontrivial phenomena have been demonstrated in twisted vdW junctions (the so‐called magic angle), such as unconventional superconductivity, topological phases, and magnetism. However, there have been only few reports on integrated vdW layers with large twist angles θ t , such as twisted interfacial Josephson junctions using high‐temperature superconductors. Herein, vdW homojunctions of the thin‐magnetic flakes, Fe 3 GeTe 2 (FGT), with large θ t ranging from 0° to 90°, without inserting any tunnel barriers are assembled. Nevertheless, these vdW homojunctions exhibit tunnel‐magnetoresistance (TMR) like behavior (pseudo‐TMR (PTMR) effect) with the ratios highly sensitive to the θ t values, revealing that the vdW gap at the junction interface between the twisted FGT layers behaves like a tunnel barrier and the θ t serves a control parameter for PTMR by drastically varying magnitudes of the lattice‐mismatch and the subsequent appearance of antiferromagnetic (AFM) spin alignment. First‐principles calculations considering vacuum gaps indicate strong dependence of TMR on the θ t driven by the sixfold screw rotational symmetry of bulk FGT. The present homojunctions hold promise as a platform for novel AFM spin‐dependent phenomena and spintronic applications.

Obata, Reiji [Faculty of Science and Engineering A↗

Andreev reflection at the altermagnet-superconductor interface

Altermagnets are a new class of magnetic materials, which exhibit large spin splitting, but due to the combined spin and real space group symmetry protection maintain zero net macroscopic magnetization. Such a characteristic may prove them to be superior in applications in superconducting heterostructures and thus here we investigate the Andreev reflection at the altermagnet/superconductor interface. We compare and contrast altermagnets to other magnetic materials, revealing qualitative differences in the behavior of altermagnetic junction depending on the Fermi surface orientation. We study the resonant states arising in setups with strong tunneling barriers and show that sensitivity to nonmagnetic disorder is also dependent on the orientation. In conclusion, our results provide a building block for altermagnetic superconducting heterostructures such as Josephson π junctions with superior properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Space-Charge-Limited van der Waals Spin Transistor

Integrating semiconducting and magnetic materials could combine transistorlike operation with nonvolatility and enable architectures such as logic in memory. Here, in this work, we employ correlated electrical transport and scanning nitrogen-vacancy center magnetic imaging to elucidate a spin transistor concept that amalgamates vertical and lateral hopping transport inside a 2D antiferromagnetic semiconductor, mechanistically distinct from vertical tunneling devices. Our device, based on a monolayer-bilayer junction in CrSBr, displays giant, gate-tunable magnetoresistance driven by the dual action of electrostatic doping on space-charge-limited lateral conduction and interlayer exchange coupling. Moreover, we visualize a field-trainable, layer-sharing effect that selects between coherent or domain-wall reversal at the spin-flip transition, enabling multilevel, memristive conductance states. Our layer-dependent space charge mechanism for convergent electrical and magnetic control opens opportunities to address limitations in contemporary computing.

2-dimensional systems↗

Nanoscale Imaging of Magnetotransport around a Circular 𝑝−𝑛 Junction in Graphene

Magnetoresistance studies of 2D systems are often shaped by the motion of electrons that occupy spatially confined wave functions, such as topological edge modes and disorder-induced bound states. Directly probing how such states form and behave in situ , under applied currents, provides a clear way of connecting microscopic physics to the macroscopic transport response. Here, in this Letter, scanning tunneling potentiometry is used to probe the local, current-induced electrochemical potential of carriers in graphene near circular 𝑝−𝑛 junctions in an out-of-plane magnetic field ranging from 0 to 1.4 T. These measurements provide detailed information about the motion of carriers at the nanometer scale, revealing how it evolves with increasing field. The electrochemical potential displays distinct patterns, such as dipoles, spirals, and concentric disks in weak, moderate, and high fields, respectively. The size and orientation of these patterns can be used to understand how local carrier dynamics change in different transport regimes as well as to directly extract physical parameters such as the electron mean free path and cyclotron diameter.

36 MATERIALS SCIENCE↗