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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

Polydiacetylene as an all-optical picosecond Switch

Polydiacetylene derivative of 2-methyl-4-nitroaniline (PDAMNA) shows a picosecond switching property, which illustrated a partial all-optical picosecond NAND logic gate. The switching phenomenon was demonstrated by waveguiding two collinear beams at 633 nm and 532 nm through a hollow fiber of 50 micrometers diameter, coated from inside with a thin film of PDAMNA. A Z-scan investigations of a PDAMNA thin film on quartz substrate revealed that the switching effect was attributed to an excited state absorption in the systems. The studies also showed that the polymer suffers a photo-oxidation beyond an intensity level of 2.9 x 10(exp 6) w/square cm. The photo-oxidized film has different physical properties that are different from the original film before oxidation. The life time of both excited states before and after oxidation as well as their absorption coefficients were estimated by fitting a three level system model to the experimental results.

Abdeldayem, Hossin A.↗
NASA NTRS1972

Thin-film temperature sensor.

A new device has been developed for sensing small and rapid temperature changes accompanying biochemical reactions. The active element consists of an evaporated thin-film capacitor having a relatively strong temperature dependence. This dependence is derived from electron trapping effects in the thin amorphous dielectric film. A voltage output of at least 50 mV/deg can be obtained prior to amplification by using a resonant ac bridge circuit operating at 100 kHz. The corresponding noise output for a 10 kHz bandwidth can with an optimum circuit be as low as 4 microvolts. Therefore, the minimum detectable temperature change would be 80 microdegrees at 10 kHz. Rapid thermal response is assured by supporting the thin-film capacitor on a thin anodic tantalum oxide film suspended across an electrolytically etched window in a tantalum foil.

Maserjian, J.↗
NASA NTRS1981

Ion beam deposited protective films

Single or dual ion beam sources were used to deposit thin films for different applications. Metal and metal oxide films were evaluated as protective coatings for the materials. Film adherence was measured and the most promising films were then tested under environments similar to operating conditions. It was shown that some materials do protect die material (H-13 steel) and do reduce thermal fatigue. Diamondlike films have many useful applications. A series of experiments were conducted to define and optimize new approaches to the manufacture of such films. A dual beam system using argon and methane gases was developed to generate these films.

Mirtich, M. J.↗
NASA NTRS1986

Surface film effects on drop tube undercooling studies

The effects of various gaseous atmospheric constituents on drop-tube solidified samples of elemental metals were examined from a microstructural standpoint. All specimens were prepared from the purest available elements, so effects of impurities should not account for the observed effects. The drop-tube gas has a definite effect on the sample microstructure. Most dramatically, the sample cooling rate is effected. Some samples receive sufficient cooling to solidify in free fall while others do not, splating at the end of the drop tube in the sample catcher. Gases are selectively absorbed into the sample. Upon solidification gas can become less soluble and as a result forms voids within the sample. The general oxidation/reduction characteristics of the gas also affect sample microstructures. In general, under the more favorable experimental conditions including reducing atmospheric conditions and superheatings, examination of sample microstructures indicates that nucleation has been suppressed. This is indicated by underlying uniform dendrite spacings throughout the sample and with a single dendrite orientation through most of the sample. The samples were annealed yielding a few large grains and single or bi-crystal samples were commonly formed. This was especially true of samples that were inadvertently greatly superheated. This is in contrast with results from a previous study in which surface oxides were stable and contained numerous sites of nucleation. The number of nucleation events depends upon the surface state of the specimen as determined by the atmosphere and is consistent with theoretical expectations based upon the thermodynamic stability of surface oxide films. Oxide-free specimens are characterized by shiny surfaces, with no observable features under the scanning electron microscope at 5000X.

Ethridge, E. C.↗
NASA NTRS1987

AC impedance analysis of polypyrrole thin films

The AC impedance spectra of thin polypyrrole films were obtained at open circuit potentials from -0.4 to 0.4 V vs SCE. Two limiting cases are discussed for which simplified equivalent circuits are applicable. At very positive potentials, the predominantly nonfaradaic AC impedance of polypyrrole is very similar to that observed previously for finite porous metallic films. Modeling of the data with the appropriate equivalent circuit permits effective pore diameter and pore number densities of the oxidized film to be estimated. At potentials from -0.4 to -0.3 V, the polypyrrole film is essentially nonelectronically conductive and diffusion of polymer oxidized sites with their associated counterions can be assumed to be linear from the film/substrate electrode interface. The equivalent circuit for the polypyrrole film at these potentials is that previously described for metal oxide, lithium intercalation thin films. Using this model, counterion diffusion coefficients are determined for both semi-infinite and finite diffusion domains. In addition, the limiting low frequency resistance and capacitance of the polypyrrole thin fims was determined and compared to that obtained previously for thicker films of the polymer. The origin of the observed potential dependence of these low frequency circuit components is discussed.

Penner, Reginald M.↗
NASA NTRS1971

Low-pressure oxidation of Cb-1Zr alloy.

Resistively heated strip specimens of Cb-1Zr alloy were exposed at 927 C in a vacuum chamber at various levels of total pressure in the 1-microtorr range and at various oxygen partial pressures in the .1-microtorr range. Oxygen reaction rates (sticking probabilities) were found to depend on whether or not the specimens were annealed immediately before the test exposure. It is shown that a normally undetectable oxide film exists on the Cb-1Zr surface as a result of oxidation by ambient air, and this film reduces the sticking probability as compared with a clean metal surface. The alloy is considerably strengthened by addition of oxygen to a level of about 6000 ppm, while still maintaining reasonably good room temperature ductility.

Lyon, T. F.↗
NASA NTRS1979

A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphide

The elemental composition with depth into the oxide films was examined using secondary ion mass spectrometry. Results indicate that the layers are arsenic-deficient through the bulk of the oxide and arsenic-rich near both the oxide surface and the oxide-semiconductor interface region. Phosphorus is incorporated into the oxide in an approximately uniform manner. The MIS capacitor structures exhibited deep-depletion characteristics and hysteresis indicative of electron trapping at the oxide-semiconductor interface. Post-oxidation annealing of the films in argon or nitrogen generally results in slightly increased dielectric leakage currents and decreased C-V hysteresis effects, and is associated with arsenic loss at the oxide surface. The results of bias-temperature stress experiments indicate that the major instability effects are due to changes in the electron trapping behavior. No changes were observed in the elemental profiles following electrical stressing, indicating that the grown films are chemically stable under device operating conditions.

Kuhlman, G. J.↗
NASA NTRS1970

Thin film devices used as oxygen partial pressure sensors

Electrical conductivity of zinc oxide films to be used in an oxygen partial pressure sensor is measured as a function of temperature, oxygen partial pressure, and other atmospheric constituents. Time response following partial pressure changes is studied as a function of temperature and environmental changes.

Canady, K. S.↗
NASA NTRS2011

Active Oxidation of SiC

The high temperature oxidation of silicon carbide occurs in either a passive or active mode, depending on temperature and oxygen potential. Passive oxidation forms a protective oxide film which limits attack of the SiC:SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g.) Active oxidation forms a volatile oxide and leads to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g). The transition points and rates of active oxidation are a major issue. Previous studies are reviewed and the leading theories of passive/active transitions summarized. Comparisons are made to the active/passive transitions in pure Si, which are relatively well-understood. Critical questions remain about the difference between the active-to-passive transition and passive-to-active transition. For Si, Wagner [2] points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. This suggests a significant oxygen potential difference between these two transitions and our experiments confirm this. For Si, the initial stages of active oxidation are characterized by the formation of SiO(g) and further oxidation to SiO2(s) as micron-sized rods, with a distinctive morphology. SiC shows significant differences. The active-to-passive and the passive-to-active transitions are close. The SiO2 rods only appear as the passive film breaks down. These differences are explained in terms of the reactions at the SiC/SiO2 interface. In order to understand the breakdown of the passive film, pre-oxidation experiments are conducted. These involve forming dense protective scales of 0.5, 1, and 2 microns and then subjecting the samples with these scales to a known active oxidation environment. Microstructural studies show that SiC/SiO2 interfacial reactions lead to a breakdown of the scale with a distinct morphology.

Jacobson, Nathan S.↗
NASA NTRS1974

Fretting of Nickel-Chromium-Aluminum Alloys at Temperatures to 816 C

A series of four nickel-based alloys containing 10 percent and 20 percent chromium in combination with 2 percent and 5 percent aluminum were fretted in dry air at temperatures to 816 C. At all temperatures, the alloys showed far less fretting wear than did high-purity nickel. This was attributed to the formation of protective oxide films on the alloys, the result of the selective oxidation of the alloy constituents. Increasing the aluminum concentration reduced fretting wear at all temperatures. Increasing the chromium concentration from 10 percent to 20 percent resulted in decreased fretting wear at 23 and 540 C, but increased fretting wear at 650 and 816 C.

Bill, R. C.↗
NASA NTRS1976

Properties of splat-quenched 7075 aluminum type alloys

The 7075 alloy belonging to the Al-Zn-Mg-Cu system, prepared by powder metallurgy techniques, was used in a study of alloys prepared from splat-quenched foils consolidated into bar material by hot extrusion. Ni and Fe were included in one alloy specimen, producing a fine dispersion of FeAl3 type particles which added to the strength of the aged alloy but did not coarsen upon heat treatment. Fine oxide films showing up on air-splatted foils induce finely dispersed oxide stringers (if the foils are not hot-worked subsequently) which in turn promote axial cracking (but longitudinal tensile strength is not seriously impaired). Splatting in a protective atmosphere, or thermomechanical processing, is recommended to compensate for this.

Durand, J. P. H. A.↗
NASA NTRS1974

The chemisorption of H2O, HCOOH and CH3COOH on thin amorphous films of Al2O3

Investigation of the irreversible chemisorption of water, formic acid and acetic acid on a thin amorphous aluminum oxide film, using inelastic tunneling spectroscopy. All of the tunnel junctions employed were Al-Al2O3-Pb junctions with the adsorbate on the Al2O3 surface between the Al2O3 and the Pb electrode. The results obtained include the finding that all Al2O3 surfaces prepared by oxidation of Al have free CH groups present on them.

Lewis, B. F.↗
NASA NTRS1980

Adherence of ion beam sputter deposited metal films on H-13 steel

An electron bombardment argon ion source was used to sputter deposit 17 different metal and metal oxide films ranging in thickness from 1 to 8 micrometers on H-13 steel substrates. The film adherence to the substrate surface was measured using a tensile test apparatus. Comparisons in bond strength were made between ion beam, ion plating, and RF deposited films. A protective coating to prevent heat checking in H-13 steel dies used for aluminum die casting was studied. The results of exposing the coated substrates to temperatures up to 700 degrees are presented.

Mirtich, M. J.↗
NASA NTRS1989

Photosensor with enhanced quantum efficiency

A method to significantly increase the quantum efficiency (QE) of a CCD (or similar photosensor) applied in the UV, far UV and low energy x-ray regions of the spectrum. The increase in QE is accomplished by overthinning the backside of a CCD substrate beyond the epitaxial interface and UV flooding the sensor prior to use. The UV light photoemits electrons to the thinned surface and charges the backside negatively. This in turn forms an accumulation layer of holes near the Si-SiO.sub.2 interface creating an electric field gradient in the silicon which directs the photogenerated signal to the frontside where they are collected in pixel locations and later transferred. An oxide film, in which the backside charge resides, must have quality equivalent to a well aged native oxide which typically takes several years to form under ambient conditions. To reduce the amount of time in growing an oxide of sufficient quality, a process has been developed to grow an oxide by using deionized steam at 95.degree. C. which takes less than one hour to grow.

Janesick, James R.↗
NASA NTRS2009

The Active Oxidation of Silicon Carbide

The high temperature oxidation of silicon carbide occurs in two very different modes. Passive oxidation forms a protective oxide film which limits further attack of the SiC: SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g) Active oxidation forms a volatile oxide and may lead to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g) Generally passive oxidation occurs at higher oxidant pressures and active oxidation occurs at lower oxidant pressures and elevated temperatures. Active oxidation is a concern for reentry, where the flight trajectory involves the latter conditions. Thus the transition points and rates of active oxidation are a major concern. Passive/active transitions have been studied by a number of investigators. An examination of the literature indicates many questions remain regarding the effect of impurity, the hysteresis of the transition (i.e. the difference between active-to-passive and passive-toactive), and the effect of total pressure. In this study we systematically investigate each of these effects. Experiments were done in both an alumina furnace tube and a quartz furnace tube. It is known that alumina tubes release impurities such as sodium and increase the kinetics in the passive region [1]. We have observed that the active-to-passive transition occurs at a lower oxygen pressure when the experiment is conducted in alumina tubes and the resultant passive silica scale contains sodium. Thus the tests in this study are conducted in quartz tubes. The hysteresis of the transition has been discussed in the detail in the original theoretical treatise of this problem for pure silicon by Wagner [2], yet there is little mention of it in subsequent literature. Essentially Wagner points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. A series of experiments were conducted for active-to-passive and passive-to-active transitions by increasing and decreasing oxygen pressure, respectively. For pure silicon a dramatic difference was found; whereas for SiC the difference was not as great. This may be due to the oxidation of the carbon in SiC which may break down the scale [3]. The third area is the effect of total pressure. In the literature, low oxygen potentials are achieved via either low total pressure or low oxygen pressure in an O2/Ar mixture. Both types of experiments are done in this study and the differences are discussed with regard to the presence or absence of a boundary layer.

Jacobson, Nathan S.↗