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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Equipment Assessment Guide: A Technical Inspection and Hardening Guide for Devices in Power Grid Operations

This Equipment Assessment Guide, developed by Idaho National Laboratory (INL), provides a comprehensive framework designed to enhance the security of operational technology (OT) devices within power grid operations. The guide outlines essential steps for asset owners to conduct technical inspections and harden vulnerable hardware and firmware components commonly found in embedded systems. It focuses on components frequently targeted by cyber threats, offering valuable identification techniques for locating and recognizing critical components on devices. Additionally, the guide presents recommended secure configurations aimed at minimizing exposure and reinforcing defenses, along with impact analysis that highlights the potential consequences for grid operations if components are compromised. By implementing the recommendations outlined in this guide, asset owners can significantly enhance their cybersecurity posture, reduce the attack surface of field-deployed devices, and improve the resilience of grid services against emerging cyber threats.

42 - ENGINEERING↗
DOE OSTI2019

Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices: Preprint

Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device's behavior and its static and dynamic behavior. Enhancement-mode device operation is realized with this type of device architecture without the need for any selective area doping. The dynamic thermal behavior of the device is characterized through its short-circuit behavior. Based on the device static and dynamic behavior, it is envisioned that reliable vertical transistors can be fabricated for the power electronics applications.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2025

Impact assessment of geomagnetic induced current neutral blocking devices with power electronics sources on distance relay for 230 kV transmission lines

Electrical grids increased the integration of power electronics sources onto transmission lines. In addition, recent reports show a significant rise in geomagnetic storms occurring in 2024. These geomagnetic storms can affect transmission lines by inducing electrical currents within them, potentially causing power outages due to overloaded power transformers. Geomagnetic induced current neutral blocking devices (GIC-NBDs) are capacitors on the ground of wye power transformers, to avoid damage caused by geomagnetic storms. The integration of distance relays and transmission lines with power electronics sources and GIC-NBDs needs to be studied to observe if GIC-NBDs and power electronics sources could adversely affect operation of the electrical grid. In this analysis, the effect of 2 MW power electronics sources and GIC-NBDs on distance relays is assessed for different 230 kV transmission line lengths in radial and nonradial power systems. The simulations measured the apparent impedances, with different electrical faults. Results for a typical 2,650 μF GIC-NBD application were presented on impedance plots, and the distance relay model operations were assessed. In conclusion, the tests for radial and nonradial power systems showed the behavior of the distance elements and source impedance ratios, assessing the effect of power electronics sources and GIC-NBDs on 230 kV transmission lines.

Distance relays↗
NASA NTRS1982

Single event upset sensitivity of low power Schottky devices

Data taken from tests involving heavy ions in the Berkeley 88 in. cyclotron being directed at low power Schottky barrier devices are reported. The tests also included trials in the Harvard cyclotron with 130 MeV protons, and at the U.C. Davis cyclotron using 56 MeV protons. The experiments were performed to study the single event upsets in MSI logic devices containing flip-flops. Results are presented of single-event upsets (SEU) causing functional degradation observed in post-exposure tests of six different devices. The effectiveness of the particles in producing SEUs in logic device functioning was found to be directly proportional to the proton energy. Shielding was determined to offer negligible protection from the particle bombardment. The results are considered significant for the design and fabrication of LS devices for space applications.

Price, W. E.↗
DOE OSTI2023

A Power Takeoff Device for a Small Marine Hydrokinetic Turbine Deployed from an Unmanned Floating Platform

The design, development, and field-testing of a power takeoff (PTO) device equipped with a ball-type continuously-variable transmission (B-CVT) for a small marine hydrokinetic (MHK) turbine deployed from a floating unmanned autonomous mobile catamaran platform is described. The turbine is a partially-submerged multi-blade undershot waterwheel (USWW). The objective is to develop a PTO for the optimal conversion of the MHK energy harnessed by the turbine to electric power, which is stored in battery banks onboard the MHK platform. Modeling, simulation, and bench testing of the USWW and PTO show the feasibility of utilizing the B-CVT's variable gear ratio to decouple the USWW and generator speeds, maintaining the waterwheel within its optimal tip speed ratio (TSR) while varying the generator speed, thereby increasing the efficiency of the PTO. Results of bench and field testing in support of characterizing the power conversion capabilities of the PTO are described. The system being developed is in support of potential self-powered autonomous mobile recharge stations for unmanned aerial vehicles (U A V s) operating in coastal zones. Field tests of the complete MHK platform with 9 blades on the waterwheel and wheel sub mergences of 10 and 12 inches (full blade submergence) were performed. The overall proof-of-concept was successfully demonstrated, with the system satisfactorily capturing and converting water flow energy into electricity. The feasibility of utilizing the B-CVT as a means of increasing the PTO power capture capabilities and efficiency is analyzed.

Pimentel, Hugo↗
NASA NTRS2019

Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications

To understand the limitation of maximizing the switching speed of SiC low current discrete devices and high current power modules in hard switching applications, double pulse tests are conducted and the testing results are analyzed. For power modules, the switching speed is generally limited by the parasitics rather than the gate drive capability. For the discrete SiC device, the conventional voltage source gate drive (VSG) is not sufficient to maximize the switching speed even if the external gate resistance is minimized. The limitation of existing current source gate drives (CSG) are analyzed, and a CSG dedicated for SiC discrete devices is proposed, which can provide constant current during the switching transient regardless of the high Miller voltage and large internal gate resistance. Compared with the conventional VSG, the proposed CSG achieves 67% faster turnon time and 50% turn-off time, and 68% reduction in switching loss at full load condition.

Handong Gui↗
DOE OSTI2020

Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga 2 O 3

Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while maintaining good mobility have been big challenges in wide band gap materials. Here P-type and n-type conductivity was introduced in β-Ga 2 O 3 , an ultra-wide band gap oxide, by controlling hydrogen incorporation in the lattice without further doping. Hydrogen induced a 9-order of magnitude increase of n-type conductivity with donor ionization energy of 20 meV and resistivity of 10 -4 Ω.cm. The conductivity was switched to p-type with acceptor ionization energy of 42 meV by altering hydrogen incorporation in the lattice. Density functional theory calculations were used to examine hydrogen location in the Ga 2 O 3 lattice and identified a new donor type as the source of this remarkable n-type conductivity. Positron annihilation spectroscopy measurements confirm this finding and the interpretation of the experimental results. This work illustrates a new approach that allows a tunable and reversible way of modifying the conductivity of semiconductors and it is expected to have profound implications on semiconductor field. At the same time, it demonstrates for the first time p-type and remarkable n-type conductivity in Ga 2 O 3 which should usher in the development of Ga 2 O 3 devices and advance optoelectronics and high-power devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

First-principles calculations of structural, electrical, and optical properties of ultra-wide bandgap (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys

Alloys between Ga 2 O 3 and Al 2 O 3 (AGO) present a rich material space exhibiting numerous structural phases with unique optoelectronic properties that make them attractive candidates as ultra-wide bandgap (UWBG) semiconductors for next-generation power devices. Here we review the properties of AGO, focusing on theoretical results on the thermodynamics of Al incorporation and its consequences on the electronic structure. We review predictions and progress in experimentally realizing these alloys, as well as how composition influences important optoelectronic variables such as the band gap, band offsets, transport properties, and n-type dopability. A number of these parameters, such as the breakdown field (related to the band gap) and electron mobility, are discussed in assessing AGO in terms of relevant power device figures of merit. Altogether, the rapid progress and predicted properties highlight the promise of AGO as a model UWBG semiconductor platform with the potential to revolutionize power devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Operando Temperature Measurements of Photovoltaic Laser Power Converter Devices Under Continuous High-Intensity Illumination

Photovoltaic devices that operate under extremely high irradiances, such as laser power converters (LPCs), may also operate at elevated temperatures, even under active cooling, as the result of large temperature gradients. We demonstrate the operation of GaAs LPC devices under orders of magnitude of irradiances up to 150 W/cm 2 in a monochromatic laser simulator with an active cooling stage. The steady-state open-circuit voltage (V OC ) as a function of irradiance is known to droop at high irradiance as the result of junction heating, but the junction temperature can be difficult to measure by conventional methods. Fast, transient V OC measurements under these extreme operating conditions are used here to determine the junction temperature. Empirical V OC temperature coefficients of the devices at each irradiance of interest are determined and used as an integral part of this technique. We show that the thermal design of different LPC devices strongly affects the operating temperature of the junctions. Knowledge of the operating temperature can be a strong tool for understanding the nature of loss mechanisms and improving the design for the operation of photovoltaic LPCs at high irradiances. Furthermore, this technique can be used for laboratory devices during initial design as well as to characterize mass-produced and packaged devices for quality control.

14 SOLAR ENERGY↗
NASA NTRS2001

Silicon Carbide Solar Cells Investigated

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Bailey, Sheila G.↗
NASA NTRS1983

The 20 GHz spacecraft FET solid state transmitter

The engineering development of a solid state transmitter amplifier operating in the 20 GHz frequency band using GaAs field effect transistors (FETs) was detailed. The major efforts include GaAs FET device development, single-ended amplifier stage, balanced amplifier stage, cascaded stage and radial combiner designs, and amplifier integration and test. A multistage GaAs FET amplifier capable of 8.2 W CW output over the 17.9 to 19.1 GHz frequency band was developed. The GaAs FET devices developed represent state of the art FET power device technology. Further device improvements are necessary to increase the bandwidth to 2.5 GHz, improve dc-to-RF efficiency, and increase power capability at the device level. Higher power devices will simplify the amplifier combining scheme, reducing the size and weight of the overall amplifier.

Source record↗
DOE OSTI2021

Control approach for power modulation of end-use loads

Methods, apparatus, and systems are disclosed herein for power modulation control of power grids using end-use loads. At the beginning of a coordination period typically lasting a few minutes, a population of end-use loads (water heaters, air conditioners, plug-in electric vehicles, etc.) is interrogated for their willingness to participate in power modulation by undergoing state transitions from on to off, or off to on. Distribution system flexibilities are calculated from the sums of device powers within distribution systems. Area flexibilities are calculated from the sums of device powers within areas. Thresholds for various devices to change state in response to inter-area oscillation damping or frequency regulation are derived from these flexibilities. Two power functions are monitored in real-time and compared with the device thresholds to trigger state changes which then remain locked throughout the remainder of the coordination period, then the devices are released from the lockout state.

Lian, Jianming↗
NASA NTRS2006

Graded junction termination extensions for electronic devices

A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

Merrett, J. Neil↗
NASA NTRS2007

Graded junction termination extensions for electronic devices

A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

Merrett, J. Neil↗
NASA NTRS1982

Deep impurity trapping concepts for power semiconductor devices

High voltage semiconductor switches using deep impurity doped silicon now appear feasible for high voltage (1-100 kV), high power (10 Kw) switching and protection functions for future space power applications. Recent discoveries have demonstrated several practical ways of gating deep impurity doped silicon devices in planar configurations and of electrically controlling their characteristics, leading to a vast array of possible circuit applications. A new family of semiconductor switching devices and transducers are possible based on this technology. New deep impurity devices could be simpler than conventional p-n junction devices and yet use the same basic materials and processing techniques. In addition, multiple functions may be possible on a single device as well as increased ratings.

Sundberg, G. R.↗
DOE OSTI2025

Hardware-in-the-Loop Using Electromagnetic Transient Simulation

Digital real time simulators have the capability to run electromagnetic transient simulations in real time. This capability allows users to leverage the hardware-software combination to evaluate controller performance, protection device performance, and power device performance. This has helped many field deployment projects to be successful and be cost-effective. In this talk, we will present current state-of-art, and future of real time electromagnetic transient simulation and its impacts on field deployment.

08 HYDROGEN↗
NASA NTRS2011

A Hybrid Power Management (HPM) Based Vehicle Architecture

Society desires vehicles with reduced fuel consumption and reduced emissions. This presents a challenge and an opportunity for industry and the government. The NASA John H. Glenn Research Center (GRC) has developed a Hybrid Power Management (HPM) based vehicle architecture for space and terrestrial vehicles. GRC's Electrical and Electromagnetics Branch of the Avionics and Electrical Systems Division initiated the HPM Program for the GRC Technology Transfer and Partnership Office. HPM is the innovative integration of diverse, state-of-the-art power devices in an optimal configuration for space and terrestrial applications. The appropriate application and control of the various power devices significantly improves overall system performance and efficiency. The basic vehicle architecture consists of a primary power source, and possibly other power sources, providing all power to a common energy storage system, which is used to power the drive motors and vehicle accessory systems, as well as provide power as an emergency power system. Each component is independent, permitting it to be optimized for its intended purpose. This flexible vehicle architecture can be applied to all vehicles to considerably improve system efficiency, reliability, safety, security, and performance. This unique vehicle architecture has the potential to alleviate global energy concerns, improve the environment, stimulate the economy, and enable new missions.

Eichenberg, Dennis J.↗