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DOE OSTI2025

In-pixel integration of signal processing and AI/ML based data filtering for particle tracking detectors

We present the first physical realization of in-pixel signal processing with integrated AI-based data filtering for particle tracking detectors. Building on prior work that demonstrated a physics-motivated edge-AI algorithm suitable for ASIC implementation, this work marks a significant milestone toward intelligent silicon trackers. Our prototype readout chip performs real-time data reduction at the sensor level while meeting stringent requirements on power, area, and latency. The chip is taped-out in 28nm TSMC CMOS bulk process, which has been shown to have sufficient radiation hardness for particle experiments. This development represents a key step toward enabling fully on-detector edge AI, with broad implications for data throughput and discovery potential in high-rate, high-radiation environments such as the High-Luminosity LHC.

Parpillon, Benjamin [Fermilab; Illinois U., Chicag↗

DOE OSTI2020

Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC

Most electrical characterization of radiation damage to semiconductors is conducted on full devices or on low‐doped material. However, evaluating the radiation hardness is challenging in less mature semiconductor systems where low‐doped material is unavailable and full devices are difficult to realize. Herein, temperature‐dependent Hall effect measurements are used to demonstrate α particle‐induced radiation effects in p‐type 4H‐SiC with a room temperature hole concentration of . The 4H‐SiC is irradiated by α particles from a 210 Po source over a fluence of –. Modeling the hole concentration as a function of temperature shows that α radiation causes hole compensation through the introduction of hole traps. The radiation also induces a reduction in hole mobility due to an increase in defect‐related scattering centers. At low temperatures and increasingly higher fluences, the conduction mechanism changes from band conduction to another mechanism.

Frye, Clint D.↗

DOE OSTI2021

Compact Solid-State High-Voltage Switch

Researchers at Sandia have developed a semiconductor-based high-voltage switch, with experimental results showing potential for enhanced radiation hardness, for use in multiple power conversion applications. Gallium nitride (GaN) metal-oxide semiconductor field effect transistors (MOSFETs) were modeled using commercial and Sandia CHARON simulation software to understand their performance and for future prediction of device operation in radiation environments.

42 ENGINEERING↗

DOE OSTI2025

Charge collection efficiency of diamond and silicon sensors irradiated with alpha particles

To evaluate the viability of using semiconductors as sensor materials in a detector for the Associated Particle Imaging technique, the radiation hardness of silicon and diamond diodes to alpha particles has been assessed. Here, the detector lifetimes for both silicon and diamond sensors were measured under the prolonged exposure to alpha particles emitted by an 241 Am source. The silicon detector was exposed to alpha radiation for approximately two months, reaching an accumulated fluence of ~ 1.5 x 10 12 α cm –2 . Additionally, by using a high purity single-crystal diamond with coplanar electrodes operating with full charge collection, the diamond detector response was measured over approximately ten months reaching an accumulated fluence of over 6 x 10 12 α cm –2 cm.

47 OTHER INSTRUMENTATION↗

DOE OSTI2024

Device response principles and the impact on energy resolution of epitaxial quantum dot scintillators with monolithic photodetector integration

Abstract Epitaxial quantum dot (QD) scintillator crystals with picosecond-scale timing and high light yield have been created for medical imaging, high energy physics and national security applications. Monolithic photodetector (PD) integration enables the sensing of photons generated within the waveguiding crystal and allows a wide range of scintillator-photodetector coupling geometries. Until recently, these doubly novel devices have suffered from complex, high variance responses to monoenergetic sources which significantly reduces their precision and accuracy. The principles governing the overall device response have now been discerned and embodied by an expression derived within a geometrical optics framework which considers optical properties, surface roughness and photodetector coupling geometry. Response variation due to these factors was sufficiently reduced to obtain material-related energy resolution values of 2.4% with alpha particles. These findings place energy resolution alongside luminescence timescale, photon yield, and radiation hardness as outstanding properties of these engineered materials.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Photon Irradiation Effects on the Enduray Vision System for Nuclear Inspections

Video cameras with greater radiation hardening are needed for the operation and remote handling of equipment in nuclear reactor inspection and refueling applications. Vega Wave Systems has developed a radiation-hardened vision system for nuclear energy applications. The program described in this report provided radiation-hardness testing of this vision system using the Argonne Low-Energy Accelerator Facility (LEAF). This report presents the results of irradiation tests performed on several of Vega Wave System’s cameras at dose rates ranging from 1 kGy/hr up to 10 kGy/hr and up to total doses of >500 kGy. The results were excellent, providing proof of the camera system’s immunity to radiation effects at all levels tested.

36 MATERIALS SCIENCE↗

DOE OSTI2020

A MHz-repetition-rate hard X-ray free-electron laser driven by a superconducting linear accelerator

The European XFEL is a hard X-ray free-electron laser (FEL) based on a high-electron-energy superconducting linear accelerator. The superconducting technology allows for the acceleration of many electron bunches within one radio-frequency pulse of the accelerating voltage and, in turn, for the generation of a large number of hard X-ray pulses. In this paper, we report on the performance of the European XFEL accelerator with up to 5,000 electron bunches per second and demonstrating a full energy of 17.5 GeV. Feedback mechanisms enable stabilization of the electron beam delivery at the FEL undulator in space and time. The measured FEL gain curve at 9.3 keV is in good agreement with predictions for saturated FEL radiation. Hard X-ray lasing was achieved between 7 keV and 14 keV with pulse energies of up to 2.0 mJ. Using the high repetition rate, an FEL beam with 6 W average power was created.

43 PARTICLE ACCELERATORS↗

DOE OSTI2021

Detecting ionizing radiation using halide perovskite semiconductors processed through solution and alternative methods

We report the direct detection of high-energy radiation such as X-rays and.-rays by semiconductors at room temperature is a challenging proposition that requires remarkably pure and nearly perfect crystals. The emergence of metal halide perovskites, defect-tolerant semiconductors, is reviving hope for new materials in this field after an almost 20 year hiatus. Metal halide perovskites, which combine exceptional optoelectronic properties, versatile chemistry and simple synthesis, are challenging traditional approaches for the development of novel semiconductors for detecting hard radiation. We discuss the relevant physical properties, promising materials, fabrication techniques and device architectures for high-performance, low-cost detectors by targeting next-generation semiconductors for radiation detection. We also present a perspective on the impact of such advances in future medical imaging applications.

36 MATERIALS SCIENCE↗

DOE OSTI2020

New Radiation Tolerant LGAD for High Energy Physics

Low Gain Avalanche Detectors (LGADS) have recently been studied for applications in high energy physics. However, radiation hardness remains a problem. Here, we propose new LGAD process flow that allows for the creation of a very steep born profile in the multiapplication region, reducing the fractional acceptor removal and resulting performance degradation.

47 OTHER INSTRUMENTATION↗

DOE OSTI2020

Quality Assurance methodology for the ATLAS Inner Tracker strip sensor production

The production of the strip sensors for the ATLAS Inner Tracker (ITk) will start in 2020. Nearly 22,000 large area sensors will be produced over a period of about five years by Hamamatsu Photonics K.K. (HPK). The institutes involved in the sensor development and production are committed to deliver and maintain the highest quality sensors for the experiment. A Quality Assurance (QA) strategy has been prepared to be carried out during the whole production period. Once the process has been characterized as providing the required pre-irradiation specifications and the proper radiation hardness, the onus is on the manufacturer to rigidly stick to that qualified process. Still, sample testing with specific device-element structures and irradiation of devices should be implemented by the ITk sensor collaboration. A detailed irradiation and testing plan has been prepared by the ATLAS-ITk Collaboration, together with a newly designed test chip with specific structures to monitor different key technological and device parameters during the whole production. The tests and irradiations will be carried out on a sample basis. In order to have a practical methodology, samples from alternating batches will be sent for irradiations with protons, neutrons and gammas, and then tested in order to check that the characteristics remain within specifications. Here we present the detailed plan and the design and test methods for the structures in the test chip.

47 OTHER INSTRUMENTATION↗

DOE OSTI2023

Perovskite CsPbBr 3 Single-Crystal Detector Operating at 10 10 Photons s -1 mm -2 for Ultra-High Flux X-ray Detection

Semiconductors for detecting hard radiation are confronted with considerable problems when operating at high photon fluxes. A perovskite CsPbBr 3 single-crystal detector capable of operating at X-ray fluxes of up to 10 10 photons s -1 mm -2 with beam area ≤ 0.25 mm 2 at 58.61 keV for current-mode X-ray detection is reported. The spectrometer-grade melt-grown CsPbBr 3 detectors show a gamma-ray energy resolution of ~7.5% at 122 keV for 57 Co and dark current as low as 4.3 nA (0.5 nA mm -2 ) at a reverse bias voltage of 200 V (118 V mm -1 ). The detector is tested at X-ray energies of 8.2, 10, and 58.61 keV at a synchrotron light source under a reverse bias voltage of up to 1000 V (588 V mm -1 ). Under a sufficiently high bias voltage and within several hundreds of seconds X-ray exposure, good photocurrent linearity (goodness of fit R 2 > 0.99) and reproducibility are obtained up to a flux of ≈10 10 photons s -1 mm -2 at beam area 0.25 mm 2 with Lower Limit of Detection of ≈10 5 photons s -1 mm -2 and Charge Collection Efficiency of ≈100% for 58.61 keV X-rays. Therefore, wide application of CsPbBr 3 detectors in high-flux X-ray detection is anticipated.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Uranium Doped Gallium Nitride Epitaxial Thin Films

Gallium nitride (GaN) is near ubiquitous in modern day technologies, forming the backbone of solid-state lighting and high-power electronics. Engineering the physical properties of GaN has been investigated to some degree by the incorporation or doping of most of the elements of the periodic table, but the actinides remain unexplored. Molecular beam epitaxy is used to demonstrate uranium doping of GaN single crystals. High structural quality of the host matrix is maintained despite partial elemental segregation of the uranium dopant into 1D structures at the levels presented here. Electronic transport measurements reveal relatively high conductivity, which persists down to cryogenic temperature and is characterized by the formation of narrow gaps in the electronic band structures very close to the Fermi level. Photoluminescence measurements reveal that the U-doped GaN exhibits optical behavior similar to that of the GaN substrate. The addition of actinide materials to a non-centrosymmetric, optically active, radiation-hard, and electronically tunable host matrix opens a world of possibilities for investigating and leveraging elements with high electron correlations in the pursuit of novel devices.

36 - MATERIALS SCIENCE↗

DOE OSTI2026

A Coincident CdTe Detector Array for Enhanced Nuclear Process Monitoring

Nuclear fuel cycle aqueous separation processes desire improved real-time material characterization and process monitoring techniques; gamma coincidence spectroscopy has the potential to meet this need in these high throughput and high radiation environments based on its ability to reduce background noise, thereby enhancing detection limits and improving isotopic identification accuracy. A detector array composed of three CdTe detectors was designed to surround a chemical processing pipe in a reprocessing facility and evaluate the feasibility of passively assaying the nuclear materials flowing though this measurement point. This array uses commercial off the shelf components that are radiation hard and highly efficiency at low energies relevant to actinide photon signatures. Detector efficiency characterizations, coincidence detection, and potential configuration improvements are presented here.

Good, Erin C.↗

DOE OSTI2025

SUDA: A SUrface Dust Analyser for Compositional Mapping of the Galilean Moon Europa

Abstract The Surface Dust Analyser (SUDA) is a mass spectrometer onboard the Europa Clipper mission for investigating the surface composition of the Galilean moon Europa. Atmosphereless planetary moons such as the Galilean satellites are wrapped into a ballistic dust exosphere populated by tiny samples from the moon’s surface produced by impacts of fast micrometeoroids. SUDA will measure the composition of such surface ejecta during close flybys of Europa to obtain key chemical signatures for revealing the satellite’s composition such as organic molecules and salts, history, and geological evolution. Because of their ballistic orbits, detected ejecta can be traced back to the surface with a spatial resolution roughly equal to the instantaneous altitude of the spacecraft. SUDA is a Time-Of-Flight (TOF), reflectron-type impact mass spectrometer, optimized for a high mass resolution which only weakly depends on the impact location. The instrument will measure the mass, speed, charge, elemental, molecular, and isotopic composition of impacting grains. The instrument’s small size of$268 ~\mathrm {mm} \times 250 ~\mathrm {mm} \times 171$ 268 mm × 250 mm × 171 $~\mathrm {mm}$ mm , radiation-hard design, and rather large sensitive area of 220 cm 2 matches well the challenging demands of the Clipper mission.

Astronomy & Astrophysics↗

DOE OSTI2020

RD53A: A large-scale prototype chip for the phase II upgrade in the serially powered HL-LHC pixel detectors

The phase II upgrade of the HL-LHC experiments within the LHC intends to deepen the studies of the Higgs boson and to allow the discovery of further particles by adding an integrated luminosity of about 4000 fb -1 over 10 years of operation. This upgrade would overwhelm the installed pixel detector readout chips with higher hit rates and radiation levels than ever before. To match these extreme requirements the RD53 collaboration, a joint effort between ATLAS and CMS, developed RD53A, a new generation pixel detector readout chip prototype manufactured in a 65 nm CMOS technology. It is half the size of the final pixel chips and designed to meet requirements in the face of 3 GHz/cm 2 hit rate after irradiation to 500 Mrad. The detector is able to use 50×50 μm 2 or 25×100 μm 2 pixels with high readout speed of up to 4 links per chip with 1.28 Gbit/s each. Shunt–LDO regulators integrated on the bottom of the chip provide the required voltages to the two power domains, analog and digital. These regulators enable serial powering of the pixel modules, which is the only feasible, radiation hard scheme to ensure acceptable power cable losses and to stay within the material budget for the future pixel detectors. Finally, an overview of the status and challenges of serial powering and the Shunt–LDO regulator development will be given.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2020

Study of CMOS strip sensor for future silicon tracker

Monolithic silicon sensors developed with High-Voltage CMOS (HV-CMOS) processes have become highly attractive for charged particle tracking. Compared with the standard CMOS sensors, HV-CMOS sensors can provide larger and deeper depletion regions that lead to larger signals and faster charge collection. They can provide high position resolution, low material budget, high radiation hardness and low cost that are desirable for high performance tracking in harsh collision environment. Various studies have been conducted to explore the technology feasibility for the large-area tracking systems at future collider experiments. CHESS (CMOS HV/HR Evaluation for Strip Sensor) sensor series have been developed as an alternative solution to the conventional silicon micro-strip detectors for the ATLAS inner tracker upgrade. The first prototype (named CHESS1) was to evaluate the diode geometry and the in-pixel analog electronics. Obtained test results were used to optimize the second prototype (named CHESS2). CHESS2 was implemented with a full digital readout architecture and realized as a full reticle sized monolithic sensor. Here, the basic characteristics of the CHESS2 prototype sensors and their performance in response to different input signals are presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2022

CLARION2-TRINITY: A Compton-suppressed HPGe and GAGG:Ce-Si-Si array for absolute cross-section measurements with heavy ions

The design and performance of a new Compton-suppressed HPGe and charged-particle array, CLARION2-TRINITY, are described. The TRINITY charged-particle array is comprised of 64 Cerium-doped Gadolinium Aluminum Gallium Garnet (GAGG:Ce) crystals configured into five rings spanning 7–54 degrees, and two annular silicon detectors that can shadow or extend the angular coverage to backward angles with minimal $\gamma$-ray attenuation. GAGG:Ce is a non-hygroscopic, bright, and relatively fast scintillator with a light distribution well matched to SiPMs. Count rates up to 40 kHz per crystal are sustainable. Fundamental characteristics of GAGG:Ce are measured and presented, including light- and heavy-ion particle identification (PID) capability, pulse-height defects, radiation hardness, and emission spectra. The CLARION2 array consists of up to 16 Compton-suppressed HPGe Clover detectors (efficiency at 1 MeV) configured into four rings (eight HPGe crystal rings) using a non-Archimedean geometry that suppresses back-to-back coincident 511-keV gamma rays. The entire array is instrumented with 100- and 500-MHz (14 bit) waveform digitizers which enable triggerless operation, pulse-shape discrimination, fast timing, and pileup correction. Lastly, two examples of experimental data taken during the commissioning of the CLARION2-TRINITY system are given: a PID spectrum from 16 O + 18 O fusion-evaporation, and PID and Doppler-corrected -ray spectra from 48 Ti + 12 C Coulomb excitation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2022

Development of readout electronics for the CMS ME0 muon detector

The Large Hadron Collider (LHC) in the High Luminosity (HL-LHC) era will be upgraded to deliver instantaneous luminosities up to 5 X 10 34 cm -2 s -1 , five times more than the original design value. In order to maintain performance of the Compact Muon Solenoid (CMS) Experiment under these conditions, ME0 is one of the new muon detectors to be added, along with GE1/1, GE2/1, RE3/1 and RE4/1. ME0 uses the triple Gas Electron Multiplier (GEM) technology and is designed to cover the far-forward region of 2.0 < |η| < 2.8. Further, the readout electronics for ME0 must be designed to deal with high data rates and be sufficiently radiation hard to operate very close to the beamline. The design and development status of the readout electronics for ME0 are presented, along with recent results from integration tests performed using the latest electronics prototypes with GEM chambers.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗