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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Topics in Reliability

This talk will wind through the details of history of reliability in the agency, where things are today, and where we need to go tomorrow. It will provide many examples of reliability that are often discounted because they are not tied to some mantra from the past. Furthermore, it will separate us from the red herrings that are ever present based on the misuse of terms and practices in reliability. It will delve into several key subject matter areas that have long been considered the key reliability drivers, such as parts, printed circuit boards, radiation, and workmanship. Finally, it will highlight how the Center and Agency need to change our approach at learning lessons from past experiences to maintain a basis for reliability long into the future.

COTS↗
NASA NTRS1988

1988 IEEE Annual Conference on Nuclear and Space Radiation Effects, 25th, Portland, OR, July 12-15, 1988, Proceedings

The effects of nuclear and space radiation on the performance of electronic devices are discussed in reviews and reports of recent investigations. Topics addressed include the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, sensors in and for radiation environments, EMP/SGEMP/IEMP phenomena, radiation effects on isolation technologies, and spacecraft charging and space radiation effects. Consideration is given to device radiation effects and hardening, hardness assurance and testing techniques, IC radiation effects and hardening, and single-event phenomena.

Coakley, Peter G.↗
NASA NTRS1989

Product assurance technology for procuring reliable, radiation-hard, custom LSI/VLSI electronics

Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis.

Buehler, M. G.↗
NASA NTRS2020

Development of TID Hardness Assurance Methodologies to Capitalize on Statistical Radiation Environment Models

We develop methods for bounding part-to-part variation in TID data. When used in conjunction with statistical radiation environment models, these methods allow development of RHA that deliver estimated piece part reliability for any desired confidence level, moving beyond risk avoidance methodologies based on radiation design margin. Two methods are developed, and their results compared for realistic data.

Total Ionizing Dose↗
NASA NTRS2020

Development of TID Hardness Assurance Methodologies to Capitalize on Statistical Radiation Environment Models

We develop methods for bounding part-to-part variation in TID data. When used in conjunction with statistical radiation environment models, these methods allow development of RHA that deliver estimated piece part reliability for any desired confidence level, moving beyond risk avoidance methodologies based on radiation design margin. Two methods are developed, and their results compared for realistic data.

Total ionizing dose↗
NASA NTRS2023

A Confidence-Based Approach to Including Survivors in a Probabilistic TID Failure Assessment

A probabilistic total ionizing dose (TID) failure assessment is extended to include survivor data, enabling the bounding of failure probability to a desired confidence level (CL) without failure data. The extension provides an avenue for analyzing microelectronics tested for TID without reaching a failure mode, a scenario often encountered by missions utilizing commercial-off-the-shelf (COTS) technologies. Using the type-I censored likelihood formulation and a realistic upper bound on expected device performance, the failure probability space is bounded by confidence contours within the context of a variable environment. The framework accommodates any type of distribution assumed for the part failure or the environment under consideration. Furthermore, the framework can be utilized pre-emptively to plan future device TID tests, minimizing costs while meeting survival requirements. Heritage data may also be used as survivors to further minimize testing costs when parts are from the same lot, but the amount of constraint derived from heritage is limited. Altogether, the framework enables a formal, mathematically rigorous analysis of radiation tolerant devices tested to a maximum dose, as well as flight heritage, in a hardness assurance methodology.

confidence↗
NASA NTRS1977

Annual Conference on Nuclear and Space Radiation Effects, 14th, College of William and Mary, Williamsburg, Va., July 12-15, 1977, Proceedings

Topics related to processing and hardness assurance are considered, taking into account the radiation hardening of CMOS technologies, technological advances in the manufacture of radiation-hardened CMOS integrated circuits, CMOS hardness assurance through process controls and optimized design procedures, the application of operational amplifiers to hardened systems, a hard off-the-shelf SG1524 pulse width modulator, and the gamma-induced voltage breakdown anomaly in a Schottky diode. Basic mechanisms are examined, giving attention to chemical and structural aspects of the irradiation behavior of SiO2 films on silicon, experimental observations of the chemistry of the SiO2/Si interface, leakage current phenomena in irradiated SOS devices, the avalanche injection of holes into SiO2, the low-temperature radiation response of Al2O3 gate insulators, and neutron damage mechanisms in silicon at 10 K. Other subjects discussed are related to radiation effects in devices and circuits, space radiation effects, and aspects of simulation, energy deposition, and dosimetry.

Stahl, R. H.↗
NASA NTRS1989

1989 IEEE Annual Conference on Nuclear and Space Radiation Effects, 26th, Marco Island, FL, July 25-29, 1989, Proceedings. Part 1

Various papers on nuclear science are presented. The general topics addressed include: basic mechanics of radiation effects, dosimetry and energy-dependent effects, hardness assurance and testing techniques, spacecraft charging and space radiation effects, EMP/SGEMP/IEMP phenomena, device radiation effects and hardening, radiation effects on isolation technologies, IC radiation effects and hardening, and single-event phenomena.

Ochoa, Agustin, Jr.↗
NASA NTRS2004

Radiation Assurance for the Space Environment

The space radiation environment can lead to extremely harsh operating conditions for spacecraft electronic systems. A hardness assurance methodology must be followed to assure that the space radiation environment does not compromise the functionality and performance of space-based systems during the mission lifetime. The methodology includes a definition of the radiation environment, assessment of the radiation sensitivity of parts, worst-case analysis of the impact of radiation effects, and part acceptance decisions which are likely to include mitigation measures.

Barth, Janet L.↗
DOE OSTI2020

Annual LDRD Report (FY2019)

The performance of Nuclear Deterrence (ND) systems could be improved by adopting advanced commercial CMOS technologies. However, the radiation hardness of these ND systems must be assured. This project quantified dose rate upset thresholds, allowing us to evaluate whether advanced commercial technologies can be used in rad hard applications. This project also evaluated the susceptibility of advanced commercial technologies to neutron displacement damage and single event effects, and developed hardness assurance methods. As a result of this work, Sandia is now collaborating more closely with DoD agencies and their contractors to understand and improve the radiation hardness of advanced commercial technologies. Sandia Capabilities (SPHINX, lon Beam Lab, FPGA test capabilities) were developed and are being utilized by other programs. Staff were trained to do radiation survivability testing and developed proposals that were funded. Internal and external collaborations and partnerships were developed, including with Georgia Tech. This project received the Best Paper award at the 2019 Hardened Electronics And Radiation Technology (HEART) Conference.

36 MATERIALS SCIENCE↗
NASA NTRS1992

1992 IEEE Annual Conference on Nuclear and Space Radiation Effects, 29th, New Orleans, LA, July 13-17, 1992, Proceedings

The papers presented in this volume provide an overview of recent theoretical and experimental research related to nuclear and space radiation effects. Topics dicussed include single event phenomena, radiation effects in particle detectors and associated electronics for accelerators, spacecraft charging, and space environments and effects. The discussion also covers hardness assurance and testing techniques, electromagnetic effects, radiation effects in devices and integrated circuits, dosimetry and radiation facilities, isolation techniques, and basic mechanisms.

Van Vonno, Nick W.↗
NASA NTRS1982

Annual Conference on Nuclear and Space Radiation Effects, 19th, Las Vegas, NV, July 20-22, 1982, Proceedings

The results of research concerning the effects of nuclear and space radiation are presented. Topics discussed include the basic mechanisms of nuclear and space radiation effects, radiation effects in devices, and radiation effects in microcircuits, including studies of radiation-induced paramagnetic defects in MOS structures, silicon solar cell damage from electrical overstress, radiation-induced charge dynamics in dielectrics, and the enhanced radiation effects on submicron narrow-channel NMOS. Also examined are topics in SGEMP/IEMP phenomena, hardness assurance and testing, energy deposition, desometry, and radiation transport, and single event phenomena. Among others, studies are presented concerning the limits to hardening electronic boxes to IEMP coupling, transient radiation screening of silicon devices using backside laser irradiation, the damage equivalence of electrons, protons, and gamma rays in MOS devices, and the single event upset sensitivity of low power Schottky devices.

Long, D. M.↗
NASA NTRS2018

Space Environments & Effects

The space radiation environment can lead to extremely harsh operating conditions for spacecraft electronic systems. A hardness assurance methodology must be followed to assure that the space radiation environment does not compromise the functionality and performance of space-based systems during the mission lifetime. The methodology includes a definition of the radiation environment, assessment of the radiation sensitivity of parts, worst-case analysis of the impact of radiation effects, and part acceptance decisions which are likely to include mitigation measures.

Space radiation spacecraft mitigation space-based ↗
NASA NTRS1987

1987 Annual Conference on Nuclear and Space Radiation Effects, Snowmass Village, CO, July 28-31, 1987, Proceedings

Various papers on nuclear and space radiation effects are presented. The general topics addressed include: basic mechanisms of radiation effects, single-event phenomena, temperature and field effects, modeling and characterization of radiation effects, IC radiation effects and hardening, and EMP/SGEMP/IEMP phenomena. Also considered are: dosimetry/energy-dependent effects, sensors in and for radiation environments, spacecraft charging and space radiation effects, radiation effects and devices, radiation effects on isolation technologies, and hardness assurance and testing techniques.

Source record↗
NASA NTRS1996

Hardness Assurance Techniques for New Generation COTS Devices

Hardness Assurance (HA) techniques and total dose radiation characterization data for new generation linear and COTS devices from various manufacturers are presented. A bipolar op amp showed significant degradation at HDR, not at low dose rate environment. New generation low-power op amps showed more degradation at low voltage applications. HA test techniques for COTS devices are presented in this paper.

New Millenium advanced technologies miniature spac↗
NASA NTRS2016

Recent Advances and Future Challenges in Risk-Based Radiation Engineering

We cover a top-level introduction to hardness assurance (HA) from a robotic space system perspective, starting at the piece-part level. We discuss error sources inherent to presently-accepted HA practices and why they cause us to be risk-averse. We conclude by reviewing current proposals that move towards more risk-tolerant system design approaches as well as future challenges that will require these advanced techniques.

radiation effects↗
NASA NTRS2000

Outline: Recent work at JPL Under MSREP

MSREP is a multi-faceted program with radiation effects in new technologies, development of testing and hardness assurance methods, continual evaluation of space and laboratory test data and support to NASA Projects. Other work in progress includes: 1) Device Scaling and New Phenomena; 2) Radiation Effects in Microprocessors; 3) Latchup Testing and Latchup Mitigation; and 4) Revised Radiation Design Approaches. This paper is in viewgraph form.

Source record↗